Nonlinear memory cell

FIELD: information technologies.

SUBSTANCE: nonlinear memory cell represents arbitrary geometrically shaped set of arbitrary number of memory elements of arbitrary type which are connected by data bus lines in arbitrary order. The memory elements may be distributed over arbitrary surface or in arbitrary volume.

EFFECT: increase in data processing rate.

1 dwg

 

The invention relates to computer technology and can be used for hardware implementation of memory and, in particular, memory systems output images. RAM on nonlinear cells will accelerate the process of bit matrices, such as matrices, adjacency and incidence matrix of graphs, truth tables, etc. to Video on non-linear cells, among other things, will work with matrix and volumetric displays.

The storage element (ZÉ) is any bistable or chibitalia (e.g., capacitor) device. The memory cell or memory cell is a device consisting of (sets of) ZÉ. Currently addressable memory cell (word) hardware is implemented as a register having a linear arrangement ZÉ [1], s, Fig.7.1. The linearity of the location of ALL the cell is a characteristic common to all used memory devices (analogues). From this class of devices as a prototype selects any case, consisting of ZÉ, for example [2], s, RES. Nonlinear memory cell, similarly to the aforementioned case (prototype), consists of storage elements connected electrically with other devices. The distinguishing characteristic is not linear arrangement ZÉ in the cell. The essence of the sign of the nonlinearity raskryvaet is below.

As ZÉ have geometrical dimensions and occupy a place in space, both individually and collectively, to them it is advisable to apply the concept of physical density. Under the density ZÉ in space should be understood the number ZÉ per unit of volume (bulk density), per unit surface area (surface density) or per unit length (linear density). From this point of view, the existing memory registers are devices with a linear density ZÉ. Devices with surface and bulk densities ZÉ can be defined as devices with non-linear density ZÉ. Then the nonlinear memory cell can be called a device with non-linear density ZÉ, electrically connected to one line of the bus address and data bus lines.

Nonlinear memory cell is an arbitrary geometric form, a set of an arbitrary number of storage elements of arbitrary type, randomly connected to the data bus lines. The drawing shows an image of a flat nonlinear memory cell has a square shape, consisting of four storage elements 1, addressable line 2 and connected to the data bus lines 3-6 conductors, one of the possible ways. The line connecting the storage elements of the data bus is performed that is they way to prevent race conditions.

Under any memory refers to the processes of writing, reading and storing information. The difference in the work of the nonlinear and linear memory cells can be demonstrated on the example of the use of these cells in the memory. In the linear cell at the same time appeal you can write attributes only for the horizontal set of pixels. In the nonlinear cell (the set of storage elements 1) for one call (one period is high, for example, a signal on the address lines 2) can be written with data lines 3-6 attributes (such as color) arbitrary, within the cell, a set of pixels.

The same in those and other cells are signals of chip select and write or read, which in the drawing is not shown.

Technical results achieved by the invention are as follows.

1) Implementation of the device information processing in nonlinear memory cells.

2) increasing the speed of information processing, in particular, in the formation of the frame buffer. For example, during one cycle of memory access on nonlinear cells using split algorithms [3]can be read from or written to the attributes of the points that make up a primitive (e.g., filled triangle).

3) Simplification of the hardware processing information the purpose (In computer graphics, for example, non-linear memory can be an alternative to parallelize computations of coordinates and output points of the primitive).

Bibliographic slips

1. Helms, Computers. - M.:. Mir, 1986.

2.. Titze U., Schenk, K. Semiconductor circuitry. - M.: Mir, 1982.

3. Foreigners Y.A. Fast algorithms for computer graphics. Proceedings of all-Russian interuniversity scientific-practical conference. Computer technologies in science, practice and education. - Samara: 2005.

Nonlinear memory containing memory elements of arbitrary type, different random order electrical connections to the data bus lines (one ALL on one line); and also electrically connected to a single bus line address (all ZÉ cell with one line); as well as an arbitrary number and arbitrary location of the storage elements.



 

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