Field-effect transistor using oxide film to transmit information and preparation method thereof

FIELD: physics.

SUBSTANCE: in a field-effect transistor which includes an oxide film as a semiconductor layer, the oxide film has a channel part, a source part and a drain part, and concentration of one of hydrogen or deuterium in the source part and in the drain part exceeds that in the channel part.

EFFECT: invention enables to establish connection between the conducting channel of a transistor and each of sources and drain electrodes, thereby reducing change in parameters of the transistor.

9 cl, 13 dwg, 6 ex

 

The technical field to which the invention relates.

The present invention relates to a field effect transistor including the oxide film as a semiconductor layer, method of manufacture and to the display device. In particular, the present invention relates to a field effect transistor having characteristics which allow its use in a display and the like, the method of its fabrication and display device.

The level of technology

Field-effect transistor (PT) is a three-electrode device having a gate electrode, the source electrode and the drain electrode. Further, the FET is an active electronic device in which the current flowing through the channel layer (the current between the source electrode and the drain electrode), is controlled by the voltage applied to the gate electrode. In particular, PT, which is used as a conducting channel thin film, called thin-film PT (thin-film transistor, TFT). The device may be assembled on various substrates made of ceramics, glass, plastic, etc.

The above-mentioned TFT has an advantage that can be easily assembled on a substrate having a relatively large area, since the TFT uses thin-film technology, and is widely used as a device to drive the flat display panel, such to the to the liquid crystal display. More precisely, in the current liquid crystal display (GCD) TFT collected on a glass substrate, is used to enable and disable individual individual image elements. Also in the future, high-quality organic light-emitting diode display (OSD), is expected to enter into force, the current driver of the picture element TFT. Next, was made of high-quality liquid crystal display in which a TFT having a start-up function and control of the entire display was assembled on the substrate in the image area on the screen.

Thin-film transistor, which is currently the most widespread, is the field-effect transistor with a structure of metal-insulator-semiconductor using a polycrystalline silicon film or amorphous silicon film as a material layer of a conducting channel. Amorphous silicon TFT, almost used to start the image element, and a high-quality polycrystalline silicon TFT is also used to control the run of the entire image.

However, amorphous silicon TFT and a polycrystalline silicon TFT, it is difficult to collect on a medium such as a plastic disc or a plastic film, because to create the necessary high-temperature process.

After the years have been active to develop flexible display using TFT, obtained on a substrate such as a plastic plate or plastic film, for the driver of the liquid crystal display or organic light emitting diode. The focus was on organic semiconductor film, which is made from a material that can be placed on the plastic film or the like and which can be obtained at low temperature.

For example, organic semiconductor films has been studied and developed pentacene. Organic semiconductor has an aromatic ring. High mobility of carriers obtained in the accumulating direction of the aromatic ring during crystallization. For example, it is reported that in the case where pentacene was used for the active layer, the mobility of carriers was approximately 0.5 cm2(Vs)-1(Vs is the voltage at the source electrode), which is equal to the same amount of amorphous silicon field-effect transistor of the MOS structure (metal-oxide-semiconductor).

However, organic semiconductor, such as pentacene, has a low thermal stability (it is not stable when the temperature exceeds 150°C) and toxic (carcinogenic). For this reason, a useful device was not implemented.

Recently attention was drawn to the material of the oxide material, the cat is which can be used for a layer of a conducting channel TFT.

For example, a TFT using as a layer of a conducting channel of a transparent conductive oxide polycrystalline thin film containing ZnO as a main ingredient, was in active development. A thin film can be obtained at a relatively low temperature and for this reason it can be obtained directly on a substrate such as a plastic plate or plastic film. However, in the case of a mixture containing ZnO as a main ingredient, a stable amorphous phase cannot be obtained at room temperature, and the obtained polycrystalline phase. For this reason, it is difficult to increase the mobility of the electron due to the destruction of the boundaries of the polycrystalline grains. In addition, it is difficult to achieve reproduction in the device options, TFT due to the shape of polycrystalline grains and their relationship, as a result, they were significantly changed depending on the methods of obtaining the film.

Thin-film transistor using amorphous oxide-based In-Ga-Zn-O, was described in the work: K.Nomura, et al., Nature, 432, 488 (2004). Thin-film transistor can be obtained on a plastic plate or a glass substrate at room temperature. The device shows no characteristics of the drift mobility of approximately 6 to 9. The advantage is that thin is lenny transistor is transparent to radiation in the visible region of the spectrum.

The inventors of the present invention have studied thin-film transistor using an oxide comprising amorphous In-Ga-Zn-O oxide. As a result, there is a case where there are changes in transistor parameters (Id-Vg parameters) (Id - current drain electrode, Vg is the voltage of the gate electrode) of the TFT, while the propagation of changes associated with conductive materials or the manufacturing conditions, etc.

When the TFT is used for, for example, diagrams of a pixel of the display, changing the settings causes a change in the actions of the organic light-emitting diode or a running liquid crystal element, which eventually lowers the image quality of the display.

Summary of invention

In connection with the foregoing objective of the present invention is to reduce the above-mentioned changes in the parameters.

Examples of circumstances changes include:

1) parasitic resistance caused between each of the electrodes of the source and drain and a conducting channel; and

2) changes in the positional relationship between the gate, source and drain.

Namely, the first objective of the present invention to establish a connection between a conductive channel of the transistor and each of the electrodes of the source and drain, thereby reducing the change of parameters.

The second objective of the present invention to provide a structure capable of forming p is Sezione the relationship between shutter, from source to drain with high accuracy and method of manufacture, thereby reducing the change of parameters.

The present invention is a field-effect transistor including the oxide film as a semiconductor layer in which the oxide film includes a part of the drain and the source, to which was added one of hydrogen and deuterium.

The present invention also represents a field-effect transistor including the oxide film as a semiconductor layer in which an oxide film element includes a conducting channel, a portion of the source and part of the drain; and the concentration of one of hydrogen or deuterium in terms of source and drain is greater than the concentration of one of hydrogen or deuterium in part of the conductive channel.

Field-effect transistor in accordance with the present invention is used for display in accordance with the present invention.

Further, the present invention is a method of manufacturing a field-effect transistor including the oxide film as a semiconductor layer, including the following steps: obtaining the oxide film on the substrate; and adding one of hydrogen or deuterium to part of the oxide film to get stockbuy part and a drain part.

Moreover, the present invention is a method of manufacturing a field-effect transistor including the oxide plait the ku as a semiconductor layer, including the following steps: obtaining the oxide film on the substrate; obtaining a gate electrode on the oxide film through an insulating film shutter; and adding one of hydrogen or deuterium to the oxide film using the pattern of the gate electrode as a template to get the part of the source and the portion of the drain oxide film when samoobladanie sample electrode of the gate.

Brief description of drawings

Figa and 1B - lateral views illustrating structural examples of a field-effect transistor in accordance with the present invention.

2 is a diagram illustrating the change of the resistivity of amorphous In-Ga-Zn-O oxide film when added hydrogen.

Figa and 3B - lateral views illustrating a method of manufacturing a field-effect transistor in accordance with the present invention using the method of samoobladanie.

Figa, 4B, 4C and 4D transverse views illustrating a method of manufacturing a field-effect transistor in accordance with the present invention.

Figa and 5B are transverse views illustrating structural examples of a field-effect transistor in accordance with the present invention.

6 is a transverse view illustrating a structural example of a field-effect transistor in accordance with the present invention.

Figa and 7B - graphs illustrating the parameters subtly Lenogo transistor in accordance with the present invention.

Figa and 8B - graphs illustrating the characteristics of the hysteresis field-effect transistor in accordance with the present invention.

Figure 9 is graphs illustrating the relationship between electrical conductivity of amorphous In-Ga-Zn-O oxide film and the partial pressure of oxygen at the time of receipt of a film.

Figure 10 is a transverse view illustrating the apparatus for obtaining an amorphous oxide film.

11 is a lateral view illustrating an example of a display device in accordance with the present invention.

Fig - transverse view illustrating another example of a display device in accordance with the present invention.

Fig diagram illustrating the structure of a display device in which pixels each including an organic electroluminescent device and a thin-film transistor are spaced two-dimensional.

The best way of carrying out the invention

Figa and 1B are lateral views illustrating structural examples of a field-effect transistor in accordance with the exemplary embodiment of the present invention. Figa illustrates an example of the structure of the upper shutter and Figb illustrates an example of the structure of the lower gate.

On Figa and 1B on the substrate 10 presents: the layer of conductive channel (thin oxide film) 11, an insulating layer of the gate 12, the electrode and the current 13, the drain electrode 14, the gate electrode 15, the item source 16, the element flow element 17 and a conducting channel 18. A layer of a conducting channel 11 includes item source 16, the element flow element 17 and a conducting channel 18.

As shown in Figa, the insulating layer of the gate 12 and the gate electrode 15 are on the layer of conductive channel 11, in the mentioned order, and thus, the structure of the upper shutter. As shown in Figb, the insulating layer of the gate 12 and the layer of conductive channel 11 located on the gate electrode 15, in the mentioned order, and thus, the structure of the lower shutter. On Figa element source and a drain serving as the source electrode and the drain electrode, respectively. On Figb part of the conductive channel of the transistor and the source electrode (drain electrode) connected to each other through a portion of the source (drain).

As shown in each of Figa and 1B in a field effect transistor (PT) in accordance with this embodiment, a thin oxide film, which is a layer of a conducting channel 11 includes a portion of a conducting channel 18, the portion of the source 16 and part of the drain 17. Part of the source 16 and part of the flow 17 of added hydrogen or deuterium, so that to reduce the resistivity. When part of a conducting channel 18 includes hydrogen or deuterium, the concentration of hydrogen or deuterium in each frequent the source 16 and part of the drain 17 is raised to a value greater than the concentration of hydrogen or deuterium in part of the conductive channel 18. There is the case where the hydrogen or deuterium actively added to the conductive element of the channel 18, and the case where the hydrogen contained no active add-ins. As described later, the specific conductivity is part of the source (side drain) can be increased by adding back the hydrogen or deuterium. In addition, when the concentration of hydrogen or deuterium in the part of the source (side drain) increased to values greater than the concentration of hydrogen or deuterium in part of the conductive channel 18, the conductivity of the part of the source (side drain) can be increased to values greater than the conductivity in part of the conductive channel. In accordance with the structure of a part of the conductive channel, the source electrode (drain) may be electrically connected with each other with high reliability, where on the basis of this thin-film transistor having small deviations can be implemented.

In particular, in accordance with this embodiment, the portion of the source and part of the drain are located in the oxide film. As a consequence, can be made stable electric connection in comparison with the conventional structure in which stokowy electrode and a drain electrode placed directly on the oxide film.

This is m the embodiment, the structure of the upper shutter, the structure of the bottom gate structure with a shift or a coplanar structure can be used arbitrarily as a structure field-effect transistor. Due to the stable electrical connection coplanar structure presented on Figa, can be used. When using a coplanar structure, stokowy and a drain electrode directly connected to the boundary surface between the insulating layer, the gate conductive layer of the channel and the electrical connection can be achieved with a high degree of reliability.

The transistor, in accordance with this invention may have a structure in which the gate electrode and Itokawa (stock) parts obtained by the method of samoobladanie. This, as described later, the hydrogen was added to the oxide film by using the pattern of the gate electrode as a template, based on which part of the source and part of the drain when samoobladanie with respect to the structure of the gate electrode were located in the oxide film.

The transistor can be realized, when using the method of samoobladanie, in which the combination between stokovoj (stock) part and the gate electrode is small and uniform. As a result, parasitic capacitance, which is caused by the combination of part of the gate electrode and part of the flow can be reduced and made p is constant. Excellent transistor with the same parameters can be used due to the low parasitic capacitance.

(Ishikawae and stock parts)

As described previously, to stokovoj part 16 and a drain portion 17 added hydrogen or deuterium to reduce the resistivity. The authors of the present invention found that when the hydrogen (or deuterium) is added to the amorphous In-Ga-Zn-O thin film, the conductivity of the thin oxide film becomes larger. When part of a conducting channel 18 includes hydrogen or deuterium and the concentration of hydrogen or deuterium in each of stokovoj and stock of parts is increased to values greater than the concentration of hydrogen or deuterium in part of the conductive channel, the electrical connection can be improved.

Figure 2 - graphical dependency illustrating an example of the impact of the number of input hydrogen ion resistance. Figure 2 illustrates the change of the conductivity of the amount of introduced hydrogen ions in the case where the ions are introduced in InGaZnO4the thin film having a thickness of approximately 500 nanometers. The abscissa (x-axis) shows a logarithmic representation of the amount of introduced hydrogen ions per unit area, and the ordinate (y axis) is logarithmic representation of the resistance. Therefore, hydrogen can be added to the amorphous oxide film DL is control the conductivity.

If hydrogen or deuterium is added to stokovoj parts and stock parts, then as a consequence, the conductivity can be increased. If a portion of the conductive channel includes hydrogen or deuterium, the hydrogen concentration in each of stokovoj and stock of parts is increased to values greater than the concentration of hydrogen in the part of the conductive channel. Therefore, the conductivity of each of stokovoj and stock parts can be set at a value greater than the conductivity of the part of the conductive channel. As described above, when each of stokovoj and stock parts made from a material mainly identical (except hydrogen concentration), from which is made a part of the conductive channel can be obtained a satisfactory electrical connection between the conducting channel and each of istokpoga and a drain electrode. This stokowy (stock) electrode is connected with a part of a conducting channel through stockbuy (stock) part, thereby obtaining a satisfactory electrical connection.

In this embodiment, any resistance that is less than the resistance of a part of a conducting channel can be used as the resistance of each of stokovoj and stock parts. The resistance of each of stokovoj and stock parts may be equal to or less than 1/10 of resisting film to prevent the effect to part of the conductive channel. If the resistance of each of stokovoj and stock parts becomes equal or less than 1/1000 of the resistance of the part of the conductive channel, Itokawa (stock) part can be used as stokowy (stock) electrode.

The change in resistance to changes in hydrogen concentration depends on the composition of the oxide film, the film quality, or something similar. For example, when hydrogen ions in the amount of approximately 1017(1/cm3) per unit volume introduced into the in-Ga-Zn-O thin film having about 1000 Ω, the resistance can be reduced to about 50 Ω. If you entered about 1019(1/cm3) hydrogen ions, the resistance can be reduced to approximately 0.5 Ω. The range of concentrations of hydrogen added to each of stokovoj and stock parts, depends on the structure of the oxide film, but the concentration may be equal to or greater than 1017(1/cm3). Especially when you have a concentration equal to or greater than about 1019(1/cm3), the conductivity of each stokovoj and stock parts becomes larger, thus Itokawa and stock parts can be used as stokowy and a drain electrode.

As described above, dependent on conditions for obtaining the film, in some cases, the oxide film may contain hydrogen without active is th adding hydrogen. Therefore, there is a case where a part of the conductive channel contains hydrogen without the active addition of hydrogen. Even in this case, in the order received stokovoj and stock parts, hydrogen was added in post-processing, so that the amount of hydrogen that exceeds the amount of hydrogen contained in part of the conductive channel, introduced in stockbuy and stock parts. Therefore, the structure and effect can be obtained as described above.

The way local decrease the amount of hydrogen in the portions of the oxide film can also be used to use a portion as part of a conducting channel.

The hydrogen concentration can be estimated by measurements using Sims (secondary ion mass spectrometry). Depending on the equipment to assess the limit of detection is approximately 1017(1/cm3). A value equal to or smaller than the limit of detection, can be indirectly calculated by extrapolation based on a linear relationship between process parameters, adding hydrogen (partial pressure of oxygen at the time of receipt of a film or the number of embedded ion, as described later) and the amount of hydrogen contained in a thin film.

In each of Figa and 1B single Itokawa part and single stock part is created. As shown in Fig.6, can be represented megachi is certain ishikawae parts 16A and 16B and the many stock parts 17A and 17B. Ishikawae parts 16A and 16B have different conductivity. Stock parts 17A and 17B have different conductivity. The conductivity can be increased in the following order: part a conducting channel 18, in stokovoj part 16A and stokovoj part 16B. Further, the conductivity can be increased in the following order: part a conducting channel 18, in stock parts 17A and stock part 17B. To obtain such a structure, it is only necessary to increase the additional amount of hydrogen ions in the following order: part a conducting channel 18, in stokovoj part 16A and stokovoj part 16B and increase the additional amount of hydrogen in the following order: part a conducting channel 18, in stock parts 17A and stock parts 17B.

(The layer of conductive channel; an oxide film)

Any material that is an oxide, can be used as a material layer of a conducting channel (oxide film). Examples of the material include an oxide of In and Zn oxide, which can be obtained high mobility. Next, a layer of a conducting channel can be made of amorphous oxide. If the following amorphous oxide film added hydrogen, the electrical conductivity can be effectively increased.

In particular, the components of a layer of a conducting channel made of an amorphous oxide represented by

[(Sn1-xM4x 2]a·[(In1-yM3y)2O3]b·[(Zn1-zM2zO)]c,

where 0≤x≤1; 0≤y≤1; 0≤z≤1; 0≤a≤1, 0≤b≤1, 0≤c≤1 and a+b+c=1,

M4 - VI group element (Si, Ge, or Zr)having a sequence number less than that of Sn,

M3 is Lu or an element of group III (B, Al, Ga, or Y)having a sequence number less than that of In,

and M2 is an element of group II, (Mg or Ca)having a sequence number less than that of Zn.

In particular, [(In1-yGay)2O3]b·[(ZnO)]c (where 0≤y≤1, 0≤b≤1, and 0≤c≤1) and [SnO2]a·[(In2O3)]b·[(ZnO)]c (where 0≤a≤1, 0≤b≤1, and 0≤c≤1) is preferred.

For example, an amorphous oxide film can be applied based on single, dual or triple tracks, located in the inner area of the triangle where SnO2, In2O3and ZnO are placed at the vertices. Dependent on the ratio of components of the triple composition, there is the case where crystallization is in the range of the ratio of components. For example, with regard regarding double songs, including two of the three kinds of substances, as described above (composition is placed on the side of the triangle), amorphous In-Zn-O film can be obtained with a composition, which is contained In at equal to or greater than about 80 atomic.% or more, and an amorphous Sn-In-O film can be obtained with a composition, which is contained In the amount of approximately 89 atomic.%.

Next, the amorphous oxide may contain In, Ga, and Zn.

The authors of the present invention have studied thin-film transistor in which an amorphous oxide deposited on a layer of a conducting channel. In the study, it was found that polyzoniida amorphous oxide film having a conductivity of 10 S/cm or more and 0.0001 S/cm or less, may be deposited on a conductive channel to obtain excellent characteristics of the thin film transistor. While depending on the material composition of a conducting channel, to obtain the electrical conductivity can be obtained amorphous oxide film, which has a carrier concentration of electrons from approximately 1014up to 1018(1/cm3).

If the conductivity is 10 S/cm or more field-effect transistor operating in the mode of dressing, can not be obtained and the ratio of on/off cannot be made larger. In extreme cases, even if the applied voltage gate current between istokov and a drain electrode are not included on/off, and the transistor does not occur.

On the other hand, in the case of a dielectric, in other words, when the electrical conductivity is equal to or less than 0,0001 S/cm is enabled, the current cannot be made large. In extreme cases, even if the applied voltage gate current between istokov and a drain electrode does not include on/off, and the transistor does not occur.

For example, the conductivity of the oxide used for the layer of a conducting channel can be controlled by controlling the partial pressure of oxygen at the time of receipt of the film. More specifically, when the control of oxygen partial pressure is mainly controlled by the number of seats not occupied by oxygen in a thin film, basically what controls the carrier concentration of electrons. Fig.9 is a diagram illustrating a typical dependence of the conductivity of the partial pressure of oxygen, when an In-Ga-Zn-O oxide thin film obtained by sputtering. In fact, with a very strong control of oxygen partial pressure can be obtained polyzoniida film, which is an amorphous oxide film with poluizoliruyushchem property, with the concentration of carrier electrons from 1014up to 1018(1/cm3). When using the thin film as described above, a layer of a conducting channel can be obtained a satisfactory thin-film transistor. As shown in Fig.9, upon receipt of a film with a partial pressure of typically about 0.005 to PA, can be obtained polyzoniida thin film. If the oxygen partial pressure is 0.001 PA or less, the obtained thin film is an insulating, whereas, if the oxygen partial pressure is 0.01 PA is more, the conductivity is so high that the film is unsuitable for a layer of a conducting channel of the transistor.

For comparison of transport properties was prepared several amorphous oxide films obtained under different partial pressures of oxygen in the atmosphere for the films can be assessed properties on transport of the electron. If the partial pressure of oxygen was increased, there was a tendency to increase both the carrier concentration and mobility of the electron. For evaluation we used a measurement of the mobility of the electron according to the method of the Lobby.

In the case of conventional semiconductor Si, GaAs, ZnO, etc. when the concentration of the medium increases, the electron mobility decreases due to, for example, the interaction between the carriers and impurities. On the other hand, in the case of amorphous oxide film used in this embodiment, the electron mobility increases with increasing concentrations of the electron. If the voltage applied to the gate electrode, electrons can be embedded in a layer of a conducting channel of the amorphous oxide. Therefore, the current flows between istokov electrode and a drain electrode, the enabled state is obtained between the two electrodes. In the case of amorphous oxide film in this embodiment, when the carrier concentration of electrons increases, the movable is the motion of the electron becomes more thus, the voltage, the current in the transistor is in the "on"state, can be made larger. This is the reverse saturation current and the indicator on/off can be made larger.

(Insulating layer of the gate)

In the case of a field-effect transistor, in accordance with this embodiment, any material which has a satisfactory insulating properties, can be used for the insulating layer of the gate 12. For example, Al2O3, Y2O3, HfO2or mixed composition, including at least two of those compounds can be used for the insulating layer of the gate 12. So every loss current flowing between istokov electrode and the gate electrode, and the loss of current flowing between stock electrode and the gate electrode, can be reduced to approximately 10-7ampere.

(Electrodes)

Any material which has satisfactory conductivity and can give the connection between stokovoj part 16 and a drain part 17 may be used for each of istokpoga electrode 13 and a drain electrode 14. Any material may be used for the gate electrode 15. For example, a transparent conductive film consisting of In2O3:Sn, ZnO, or the like or a metallic film consisting of Au, Pt, Al, Ni, or something similar, can is to be used.

If each part of the gate and drain has satisfactory conductivity, the electrodes can be omitted, as shown in Figa.

Figb, 5A, and 5B each illustrate a diagram of the example, which presents stokowy electrode 13 and a drain electrode 14. On Figa insulating layer 19 is represented in the diagram presented on Figa, and stokowy electrode and a drain electrode connected to stokovoj part and a drain part through the area.

(Substrate).

Glass substrate, a plastic substrate, a plastic film or the like can be used as the substrate 10.

A layer of a conducting channel and an insulating layer shutter, as described above, transparent in the light. Therefore, when a transparent material is used for the electrodes and the substrate, a transparent thin-film transistor can be manufactured.

(Options TFT)

Field-effect transistor is a three-electrode device including the gate electrode 15, stokowy electrode 13 and a drain electrode 14. Field-effect transistor is an active electronic device having a function of control current Id, the current in the conductive channel based on the voltage Vg applied to the gate electrode. This makes it possible to control the current Id, the current between istokov electrode and a drain electrode.

Figa and 7B illustrate the characteristic parameters the ry field-effect transistor in accordance with this embodiment.

Despite the fact that the voltage Vg is approximately 5 volts, is applied between istokov electrode and a drain electrode, the voltage of the gate Vg, which should be applied varies between 0 volts and 5 volts, the current Id (unit of quantity: a), the current between istokov electrode and a drain electrode can be controlled (by switching on/off). Figa illustrates an example of Id-Vd parameters (Id - current electrode of the drain, Vd - voltage electrode discharge) with Vg and Figb illustrates an example of Id-Vg parameters (stegostoma feature) when Vd in the 6th century

(Hysteresis)

The reduction of hysteresis, which is one of the results in this embodiment will be described with reference to Figa and 8B. Hysteresis means that, as shown in Figa and 8B, in the case where statesattorney characteristic of the TFT evaluated when Vg varies (rises and falls) in spite of the fact that Vd is kept, changes in the values of IDs during the recovery voltage different from the values during the voltage drop. When the hysteresis is large, the Id value obtained when Vg is changed. Therefore, a device having a small hysteresis, can be used.

Figa and 8B illustrate examples statesattorney characteristics of the TFT in the case of the conventional scheme, in which stokowy electrode and a drain electrode obtained directly on the oxide is Lenk and also presents statesattorney characteristics of the TFT in the case of this variant scheme, in which Itokawa part and a drain part, each has a high concentration of hydrogen. The usual diagram showing the parameters of the hysteresis, as shown in Figa. In contrast, when Itokawa part and a drain part, each of which added hydrogen, below, in this embodiment, having a small hysteresis can be obtained device, as shown in Figb.

If conducting channel connected to istokov (stock) electrode through stockbuy (stock) part of added hydrogen, the amount of electric charges, detained in the connection portion can be reduced to reduce the hysteresis.

(Production method)

Field-effect transistor described above can be produced by the following process.

This process consists of the following: the technological process includes a step of obtaining an oxide film, which is a layer of a conducting channel and the stage of adding hydrogen to the portions of the oxide film to obtain stokovoj parts and stock parts.

Can be used early preparation of the oxide film having a resistance value that is appropriate to ensure that part of the province is included channel and then add hydrogen to the portions of the oxide film, to get stockbuy and stock parts.

An alternative may be used a method in which an oxide film having a resistance value slightly smaller than the resistance value suitable to provide part of the conductive channel, obtained in advance, and then the concentration of hydrogen in the portion of the oxide film is reduced to receive a portion of a conducting channel. The former method is suitable because it is easy to control the concentration of hydrogen.

Several methods of deposition such as a sputtering method, a deposition method, a pulsed laser or electron beam deposition, can be used as a means of obtaining the oxide film. The sputtering method is suitable in view of the performance of mass. However, the method of obtaining a film is not limited to these methods. The temperature of the substrate during retrieval of the film can be maintained at the level at room temperature without special heating.

Way, such as the introduction of the hydrogen ion, plasma compressing hydrogen, compressing atmospheric hydrogen or diffusion from adjacent hydrogen-containing film can be used as a way of adding hydrogen to the oxide film.

Of these methods, the method of introduction of the hydrogen ion is the most acceptable due to the ability to control the content of the hydrogen. H+ion, H-ion, D+ion (ion deuterium), H2+ion (molecular ion of hydrogen), or the like can be used as a kind of ions to the method of introduction of the ion. In contrast, the method of plasma pressure of hydrogen is appropriate due to the high bandwidth.

For example, the method of plasma pressure of hydrogen can be carried out using a parallel-plate type plasma apparatus for chemical vapour deposition or plasma etching apparatus of the type reactive ion etching.

After that, in this embodiment, will be described by way of samoobladanie.

In this way, with the aim of creating stokovoj parts and stock parts hydrogen is added to the oxide film by using a pattern of the gate electrode located over the layer of conductive channel as a template. In accordance with this method Itokawa part and a drain part may be made by way of samoobladanie with the electrode of the gate.

How samoobladanie in this embodiment, in relation to the example of the top gate thin-film transistor provided on Figa, will be described with reference to Figa and 3B.

First, an oxide film, which is a layer of a conducting channel 11, is obtained on the substrate 10 by forming relief. Then Rositsa insulating layer of the gate 12. Then create the gate electrode 15 by forming relief. In the stage of adding hydrogen hydrogen is added to the oxide film by the method same as the introduction of the hydrogen ion or plasma compression of the hydrogen, using the gate electrode as a template (Figa), thereby creating stockbuy part 16 and a drain 17 (Figb). After this can be carried out firing to make uniform the hydrogen content.

So lying in the same plane as the transistor can be easily made by way of samoobladanie with the addition of hydrogen to a layer of a conducting channel 11 using the gate electrode 15 as a template.

When using this method, the overlap between the gate electrode and each of stokovoj and stock parts can be reduced. The combination inhibits high-speed action of the transistor, because the combination acts as a capacitor (parasitic capacitor). The change in the combination causes a change in the parameters of the transistor. When using the process of samoobladanie, a parasitic capacitance of the transistor, which is caused in part overlapping between the gate electrode and each of the parts of the source and drain can be lowered and made permanent. As a result, it is possible to produce a transistor having a high drive power and excellent uniformity.

When used this way, the mutual position between the gate, source and drain can be installed automatically, without alignment of the photomask plate, which is likely to cause an error. As long as they use the method of samoobladanie, there is no need for precision alignment of the photomask plate. There is no need for range alignment of the photomask to the plate to take into account the error caused by the combination of the photomask plate, thus, the device size can be reduced.

The method can be implemented in a process with a low temperature, thus, the thin-film transistor can be obtained on a substrate such as a plastic plate or plastic film.

In accordance with this embodiment, the amount of etching and the number of chips can be reduced to obtain the source and the drain. Therefore, the connection electrode-semiconductor can be obtained in the process with low cost and with excellent stability.

Can be manufactured display, in which the flow corresponding to the output terminal field-effect transistor, is connected to the electrode of the display element such as an organic or inorganic electroluminescent (EL) element, or a liquid crystal element. Structural example of a special display will be the OPI is an below with reference to the transverse view of the display.

For example, as shown in figure 11, a field-effect transistor including the oxide film (layer a conducting channel) 112, stokowy electrode 113, a drain electrode 114, an insulating film shutter 115 and the gate electrode 116, obtained on the base 111. A drain electrode 114 is connected to the electrode 118 through the interlayer dielectric film 117. The electrode 118 is in contact with the light-emitting layer 119. Light-emitting layer 119 is in contact with the electrode 120. In accordance with such scheme current, served in the light-emitting layer 119 may be controlled based on the magnitude of the current flowing between istokov electrode 113 and a drain electrode 114 through the channel made in the oxide film 112. Therefore, the current submitted in the light emitting layer 119 may be controlled based on the voltage applied to the gate electrode 116 of the FET. The electrode 118, the light emitting layer 119 electrode 120 are inorganic or organic electroluminescent element.

Alternatively, as shown in Fig, a drain electrode 114 is extended to also be used as the electrode 118, may be represented by the schema in which a drain electrode 114 is used as the electrode 118 for application of voltage to the liquid crystal cell or part of a cell 123, placed between films with great resistance 121 and 122. inconsistency the electrophoretic cell or part of the cell 123, film with high resistance 121 and 122, the electrode 118 and the electrode 120 form a picture element. The voltage applied to the picture element can be controlled based on the voltage discharge electrode 114. Therefore, the voltage applied to the picture element can be controlled based on the voltage applied to the gate electrode 116 of the thin-film transistor. When the media image of the image element is a capsule, in which the liquid and particles sealed insulating coating film with high resistance 121 and 122 are superfluous.

In the above two examples of field-effect transistor is usually outline a coplanar top gate. However, this implementation is not necessarily limited to this scheme. For example, the connection between stock electrode, which is an output field-effect transistor, and a picture element is topologically the same, but may be used by another circuit, such as circuit offset.

In the two examples shown an example in which a pair of electrodes for controlling the picture element are presented in parallel with the base. However, this implementation is not necessarily limited to such a scheme. For example, the connection between stock electrode, which is an output field TRANS the Stora, and the picture element remains topologically the same, any one electrode or both electrodes may be perpendicularly attached to the base.

In the two examples show only one field-effect transistor connected to the picture element. However, this implementation is not necessarily limited to such a scheme. For example, a field-effect transistor shown in the drawing, may be connected to another field-effect transistor in accordance with the embodiment. Only it is necessary that a field-effect transistor shown in the drawing, was presented at the final stage circuit including field effect transistors.

In the case where the pair of electrodes to control the image element is presented in parallel with the base, when the image element is an electroluminescent element or an element of reflection of the image, such as a liquid crystal element of reflection, it is necessary that any of the electrodes is transparent to the wavelength of the emitted light or the wavelength of the reflected light. Alternatively, in the case of a display, such as passing a liquid crystal element, it is necessary that each of the electrodes is transparent to transmitted light.

All items constituting the field-effect transistor in accordance with this embodiment, it can also be made transparent, with what results, what a transparent picture element can be produced.

Such a picture element may be provided with a base, stand at a low temperature, such as a substrate made of plastic resin, which has a light weight, flexible and transparent.

Further, the display in which pixels, each of which includes an electroluminescent element (in this case, the organic electroluminescent element) and field-effect transistors are two-dimensional arranged will be described with reference to Fig.

On Fig transistor 181 controls the organic electroluminescent layer 184, and the transistor 182 selects the pixel. The capacitor 183, which is used to maintain the selected state, and placed between a normal line of the electrode 187 and stokovoj portion of the transistor 182, stores the charges to keep the signal applied to the gate of the transistor 181. Selecting a pixel defined by the line of the scanning electrode and the signal line electrode 186.

More precisely, the image signal sent as a pulse from the triggering device circuits (not shown) to the gate electrode through the scanning line electrode 185. At the same time the pulse is sent from another triggering device circuits (not shown) to the transistor 182 through the signal line electrode 186, choosing, thus the pixel. At this time, the transistor 182 including the Yong, to accumulate the electric charge in the capacitor 183, located between the signal line electrode 186 and the source of transistor 182. However, the voltage at the gate of the transistor 181 is kept at a desirable level, such that the transistor has been turned on. This state is held until until the next signal. During the mode in which the transistor 181 is in an enabled state, the voltage and current are served on the organic electroluminescent layer 184 to maintain the emission of light.

In the constructional example shown in Fig, each pixel includes two transistors and a capacitor. In order to improve operational parameters, this structure may be included a large number of transistors and the like. It is essential that an In-Ga-Zn-O field-effect transistor, which is transparent field-effect transistor, in accordance with this embodiment, which can be obtained at a low temperature, is used for part of the transistor. Thus, the obtained current electroluminescent element.

After that, the examples of the present invention will be described with reference to the attached drawings.

(Example 1)

This example was made by top gate thin film transistor having a coplanar structure, as shown in Figa.

Th is applies to the production method, in this example there was used the method of samoobladanie presented on Figa and 3B.

Amorphous In-Ga-Zn-O oxide was used for the layer of a conducting channel 11. Was used as a way of introduction of the hydrogen ion to get stockbuy part and a drain part.

First amorphous oxide layer, as a layer of a conducting channel 11, was obtained on the glass substrate 10 (manufactured by Corning Incorporated, 1737). In this example, amorphous In-Ga-Zn-O oxide film was obtained by spraying in the high frequency range in a mixed atmosphere of gaseous argon and oxygen.

Was used sputtering device for producing film, as shown in Figure 10, including the sample 51, the target 52, the vacuum pump 53, a vacuum gauge 54, the substrate carrying device 55, controls the speed of the gas stream 56 provided for the respective gas supply systems, controls, pressure 57, and a chamber for receiving the film 58.

For the manufacture of the film was used sputtering installation, which consisted of a camera to get the film 58, the vacuum pump 53 to create a vacuum in the chamber receiving the film, the substrate carrying device 55 for holding the substrate, which was prepared oxide film in the camera receiving the film, and the solid source material (target) 52, opposite the substrate, not the current fixtures, and then the energy source (the source of powerful RF signal, which is not shown) to evaporate material from a source of particulate material, and means for delivering gaseous oxygen into the chamber receiving the film.

There were presented three gas supply: for argon, oxygen and gas mixture of argon and oxygen (Ar:O2=80:20), with the means of controlling the speed of the gas flow 56, able to independently control the flow rate of the respective gases and controls pressure 57, to control the speed at the outlet, the chamber receiving the film, it was possible to obtain a predetermined gas atmosphere.

In this example, obtained by sintering a polycrystalline material having a composition InGaO3(ZnO)having a size of two inches, was used as the target (material source), and the applied RF power was 100 watts. The total pressure of the atmosphere when the film was made, was 0.5 PA, where the ratio of gas flow was Ar:O2=100:1. The receive rate of the film was 13 nm/min, and the temperature of the substrate was 25°C.

With regard to the obtained film, when you look at the angle of diffraction of x-rays (method of a thin film, the angle of incidence was 0.5 degrees), which was determined approximately on the surface of the film, a clear diffraction peak was detected, which is output shows that made-In-Ga-Zn-O film is an amorphous film.

Further, as a result of analysis using spectroscopic ellipsometry, it was found that the RMS roughness of the thin films was equal to approximately 0.5 nanometers, and the film thickness as a result was equal to about 60 nanometers. As a result, fluorescence spectroscopy x-ray compositional ratio of the metal thin film was In:Ga:Zn=38:37:25.

The conductivity was equal to approximately 10-2S/cm, the concentration of carrier electrons was equal to 4×1016(1/cm3) and the estimated mobility of the electron is approximately 2 cm3/V·sec.

From spectral analysis of absorption of light is forbidden band width of the energy produced amorphous oxide film was equal to about 3 electronvolts.

Next, an insulating layer shutter 12 was obtained by image acquisition, using a photolithographic method and the method of inverse lithography. An insulating layer shutter was obtained by forming Y2O3film thickness of 150 nm using the method of electron-beam deposition. Relative electronic constant Y2O3the film was about 15.

Further, the gate electrode 15 was made using photolithographically and method of the inverse lithography. The length of the conductive channel was 40 μm, while the width of the conducting channel was 200 µm. The electrode was made of Au and has a thickness of 30 nanometers.

Then ion of hydrogen (or deuterium) was embedded in a thin amorphous oxide film (Figa)to form part of the source and part of the drain layer of a conducting channel (Figb). During the introduction of the ion, as shown in Figa, hydrogen ions were introduced into the layer of a conducting channel through the insulating film of the gate.

In accordance with this method, the gate electrode was used as the template, and part of the source and part of the drain was located at samoobladanie in accordance with the structure of the electrode of the gate.

With the introduction of ion H+(proton) was used as a variety of ions, and accelerating voltage was 20 kV. Energy ion radiation per unit surface area can be determined approximately from 1×1013(1/cm2) to 1×1017(1/cm2). The sample to which were added deuterium ions, was separately prepared as in the above case.

The composition analysis was performed using secondary ion mass spectrometry to estimate the hydrogen content. The concentration of hydrogen in a thin film irradiated sample with ions at 1×1015(1/cm2) was approximately 2×1019(1/cm3). So, for example, in the case of a sample in which the number of irradiated ions was 1×10 13(1/cm2), the concentration of hydrogen could not be measured because it was equal to or less than the detection limit. However, it was possible to estimate that the hydrogen concentration was about 2×1017(1/cm3).

The amount of radiation of the hydrogen ion of each of the parts of the source and drain in the thin-film transistor in accordance with this example was set at 1×1016(1/cm2). The hydrogen concentration was estimated to be about 2×1020(1/cm3). Was estimated conductivity cooked separately weighed. The conductivity was approximately equal to 80 S/see In this example, each of the parts of the source and drain are of sufficiently high electrical conductivity, such that was used the scheme shown in Figa, with the exception of the source electrode and the drain electrode.

(Comparative example 1)

In the comparative example was manufactured device having a scheme in which the source electrode and the drain electrode were formed directly on the oxide film. Amorphous oxide layer was created on the substrate. After that, the source electrode, the drain electrode, the insulating layer of the gate electrode of the gate were created by drawing. Method samoobladanie was not used. The formation of each layer was performed on the basis of example 1. The electrode issolate (Au), having a thickness of 30 nm, was used as each of the electrodes of the source and drain.

(Evaluation of characteristics of the thin-film transistor device).

Figa and 7B represent instances of voltage-current characteristics of the thin-film transistor device measured at room temperature. Figa represents the current-voltage (Id-Vd) characteristics, while Figb represents the current-voltage (Id-Vg) characteristics. As shown in Figa, when it was applied a predetermined voltage at the gate Vg and the dependence of the current source-drain Id from voltage drain Vd together with changes in Vd was measured, the behavior of a conventional semiconductor transistor, that is, saturation (bite) at a time when Vd was approximately equal to 6 volts, was presented. With regard to amplitude characteristics, when the applied voltage Vd at 4 volts, the threshold value of gate voltage Vg, it was about minus 0.5 volts. When Vg was 10 volts, proceeded current Id is approximately equal to 1.0×10-5A.

The ratio settings on/off of the transistor to be equal to 106or more. Then, when the output characteristics was calculated drift mobility in saturation was obtained drift mobility of approximately 8 cm2(Vs)-1. The fabricated device was irradiated in the necessary light and made some measurements. Any changes in the characteristics of the transistor were not observed.

It was estimated change of the characteristics of a variety of devices fabricated on the same substrate. The change in this example was less than the change in the comparative example. For example, it was estimated change of the current in the open state. In the comparative example, the change amounted to approximately ±15%. In contrast, in this example, the change was approximately ±10%.

In a field effect transistor, in accordance with this example, a layer of a conducting channel (thin oxide film) included part of the conductive channel, the portion of the source and part of the drain, each of which has a concentration of hydrogen is greater than that in the part of the conductive channel. Therefore, it was expected that stable electrical connection can be made between the part of the conducting channel and each of istokpoga and a drain electrode, thereby improving the uniformity and reliability of the device.

Thin-film transistor, in accordance with this example had the hysteresis is less than the hysteresis of the thin-film transistor of the comparative example. Figa and 8B illustrate current-voltage (Id-Vg) characteristics in this example and in the comparative example for comparison. Figa illustrates a comparative example and Figb illustrates an example of characteristics of the thin film transistor in the same example. As shown in the drawings, when hydrogen was added to a layer of a conducting channel, the hysteresis of the thin-film transistor can be reduced.

That is, in accordance with this example, a satisfactory electrical connection, which was strong enough to hold electric charges, could be carried out between each of istokpoga and a drain electrode and a conducting channel so that the thin-film transistor having a small hysteresis, could be performed.

Then was estimated dynamic characteristics of top-gate thin-film transistor. A voltage of 5 volts was applied between source and drain. Voltage at +5 volts and -5 volts, which were applied to the gate electrode, each of which had a pulse duration of 30 sec and the period is 30 MS, was alternately enabled to measure the output signal current flow. In this example, increasing the current was excellent, and the change at the time of increase between devices was small.

That is, in accordance with this example, the relative position between the gate, source and drain could be implemented with high accuracy by the method of samoobladanie. Therefore, the operation mode high speed was possible and the device, having high uniformity, could be implemented. Large differences in the character of the sticks between the case of introducing hydrogen ions and the opportunity of introducing deuterium ion was not observed.

You can expect a field-effect transistor having a relatively high drift mobility, in accordance with this example, can be used, for example, in the circuit for organic light-emitting diode.

(Example 2)

In this example, the circuit and method of manufacture was based on the example 1. However, the amount of introduced hydrogen was controlled, as controlled by the concentration of hydrogen in each of stokovoj and stock parts, becoming approximately 1×1018(1/cm3).

In this example, the conductivity of each of stokovoj and stock parts was insufficient, and therefore the current in the open state was slightly less than in example 1. The conductivity of a specimen prepared separately at the above hydrogen concentration was evaluated to obtain a conductivity equal to about 0.01 S/see

When a relatively low concentration of hydrogen was used in stokovoj and stock parts, insulating layer 19, the source electrode and the drain electrode were then presented, as shown in Figa, so that satisfactory characteristics of the transistor can be realized, as in the case of example 1. The characteristic of hysteresis, uniformity and operational settings operation mode with high performance were also preferred.

(Note the p 3)

This example is manufactured by the example that was made to lower the shutter device of the thin-film transistor having a coplanar structure, as shown in Figb.

In this example, the device was made using the production method shown in Fig. from 4A to 4D. How samoobladanie was not used.

The layer of conductive channel, made of amorphous In-Ga-Zn-O oxide was formed using a deposition method is a pulsed laser. Itokawa part and a drain part formed using the process with a hydrogen plasma.

First, the gate electrode 15 was structured using a photolithographic method and the method of inverse lithography on a glass substrate 10 (manufactured by Corning Incorporated, 1737). The electrode was made of Ta and has a thickness of 50 nanometers.

Next, an insulating layer shutter 12 was formed by structuring using the photolithographic method and the method of inverse lithography. An insulating layer shutter was obtained by the application of HfO2a film with thickness of 150 nm using a laser deposition method.

Next, an amorphous In-Zn-Ga-O oxide film, which is a layer of a conducting channel was obtained by structuring using the photolithographic method and the method of inverse lithography.

Amorphous In-Zn-Ga-O oxide plait the ka was applied pulsed laser deposition method, using KrF excimer laser.

Amorphous In-Zn-Ga-O oxide film was deposited using polycrystalline obtained by sintering of a material having the composition InGaO3(ZnO)4as a target. The partial pressure of oxygen when the film was formed, was equal to 7 RA. It should be noted that the power of the KrF excimer laser was 1.5×10-3the mega joules/cm2/pulse, pulse duration was equal to 20 nanoseconds and a pulse repetition frequency was set to 10 Hz. Further, the temperature of the substrate was 25°C.

The result of x-ray spectroscopy, it was determined the compositional ratio of the metal in a thin film of In:Ga:Zn=0,97:1,01:4. Further, in the analysis of samples using spectroscopic ellipsometry, it was found that the RMS error of the thin film was approximately equal to 0.6 nm and the film thickness was approximately equal to 100 nanometers. With regard to the obtained film, when you look at the angle of diffraction of x-rays (method of a thin film, the angle of incidence was 0.5 degrees), which was determined approximately on the surface of the film, a clear diffraction peak was detected, which shows that the made-In-Ga-Zn-O film is an amorphous film.

Next, resista mask 20 having the same p is the group of as the gate electrode was obtained by imaging (Figa).

After that, an amorphous In-Ga-Zn-O thin film, which was a layer of conductive channel, was added hydrogen in the plasma treatment with hydrogen, using the apparatus for plasma processing. Plasma treatment with hydrogen may be carried out using the apparatus for chemical vapour deposition with a parallel-plate type plasma or a plasma etching apparatus for reactive ion etching (Figb).

The sample to be processed (substrate obtained after the previous step)was placed in the apparatus, which was created by the vacuum. Then from the feed channel of the active gas in the chamber to provide process was filed, a gas containing hydrogen, and a source RF signal was powerful high-frequency signal, generious thus the plasma. For example, the distance between the electrodes was set to 5 cm, the temperature of the substrate was 100°C, gas flow rate (H2) was 500 cubic centimeters per minute, and the internal chamber pressure is 1 Torr. The hydrogen content in the thin film is subjected to plasma treatment with hydrogen increased, and the resistance due to this decreased.

Further, the drain electrode 14 and source electrode 13 were formed by forming the image is available. Each of the electrodes was made of gold and had a thickness of 30 nanometers (Figs).

In conclusion, the pattern 20 was Vitruvian to form a thin-film transistor provided on Figg. The channel length was equal to 50 μm and the channel width was 180 µm.

(Comparative example 2)

There was prepared a sample not subjected to the aforementioned treatment by hydrogen plasma. The layer of conductive channel had the same concentration of hydrogen over the entire area of the film and not included stockbuy and stock parts. Other schemes and methods of manufacture was based on example 2.

(Parameter estimation device of the thin-film transistor)

Thin-film transistor in accordance with this embodiment showed the behavior of a typical semiconductor transistor is saturated when the voltage cut-off) Vd=6 volts. The ratio of on/off of the transistor was 106or more and the drift mobility was approximately equal to 7 cm2(Vs)-1.

When was the multiple devices, the change in the parameters of the thin-film transistor in accordance with example 3 was less than the change in the parameters of the thin-film transistor according to comparative example 2. The parameters hysteresis and the view mode of the device with high performance of example 3 were also pre is reverent.

In a field effect transistor in accordance with this example, the layer of conductive channel (thin oxide film) included part of the conductive channel, the portion of the source and part of the drain, each of which has a concentration of hydrogen greater than this part of the conductive channel. Therefore, it was expected that stable electrical connection can be made between a part of the conductive channel and each of istokpoga and a drain electrode, thereby improving the uniformity and reliability of the device.

You can expect a field-effect transistor with a relatively high drift mobility, in accordance with this example will be used, for example, for the circuit of organic light-emitting diode.

(Example 4)

This example is an example in which a top gate thin film transistor, as shown in Figb, was fabricated on a plastic substrate.

Polyethylene terephthalate film was used as a substrate.

First layer of a conducting channel was obtained on the substrate by forming the image.

Further, in this example, forming a layer of a conducting channel polycrystalline obtained by sintering, the material having a composition of In2O3/ZnO, size two inches, was used as the target (source material) and was applied high-frequency radiation power is 100 watts. The total pressure in obtaining film was 0.4 PA, and the ratio of gases in the gas stream had the following Ar:O2=100:2. The receive rate of the film was 12 nm/min and the temperature of the substrate was 25°C.

With regard to the obtained film, when you look at the angle of diffraction of x-rays (method of a thin film, the angle of incidence was 0.5 degrees), which was determined approximately on the surface of the film, a clear diffraction peak was detected, which would indicate that is made of In-Ga-Zn-O film is an amorphous film. As a result of x-ray fluorescence spectroscopy was obtained a composition ratio of metals In:Zn=1,1:0,9.

Next, the insulating layer of the gate electrode of the gate were put on each other. The insulating layer of the gate electrode of the gate were made to have the same structure.

The gate electrode is a transparent conductive film consisting of In2O3:Sn.

Further, the hydrogen plasma treatment was presented, as in the case of example 3. Itokawa part and a drain part were obtained by samoobladanie, using the gate electrode as a template.

Stokowy electrode and a drain electrode were obtained by image formation. A transparent conductive film consisting of In2O3:Sn was used as each of the power is impressive source and drain, and the thickness was 100 nm.

(Parameter estimation device of the thin-film transistor)

Thin-film transistor obtained on polyethylene terephthalate film, was measured at room temperature. The ratio settings on/off of the transistor was 103or more. Calculated drift mobility was approximately equal to 3 cm3(Vs)-1. As in the case of example 1, changes in the characteristics between the device characteristics of the hysteresis and the implementation of the mode of operation with high performance were preferred.

While the device is obtained on polyethylene terephthalate film, was bent on a curve with a radius of 30 mm, the characteristic of the transistor was measured in the same way. A large change in the characteristic of the transistor was not observed. The same measurement was performed with visible radiation. The change in the characteristic of the transistor was not observed. Thin-film transistor manufactured in this embodiment was transparent to visible light and was made on an elastic substrate.

(Example 5)

This example will be described a display that uses a field-effect transistor provided on Fig. In a field effect transistor Playground films of indium and tin oxides serving as the drain electrode, was extended from the short side of 100 μm. H the e l e C the corresponding 90 μm of the elongated portion, was left to provide installation istokpoga electrode and the gate electrode. Then thin-film transistor was covered by an insulating layer. A polyimide film was deposited on the insulating layer and the exposed stage of polishing. On the other hand, was prepared in a plastic substrate, on which were placed a film of indium and tin oxides and polyimide film, and was made a polishing stage. The plastic substrate was opposed to the substrate on which each field-effect transistor was formed with a clearance of 5 μm and then there was introduced a nematic liquid crystal. Both sides of this scheme were fitted with a pair of polarizing plates. When voltage was applied to Estocolmo electrode of the FET and the voltage applied to the gate electrode was configured, the transmission was changed only at the site of 30 μm×90 μm, which was part of the site of films of indium and tin oxides, which was extended from the discharge electrode. Passing ability could constantly change the voltage of the source-drain during the application of voltage to the gate electrode, wherein the FET is in the enabled state. So was made a display that uses liquid crystal cell as a display element, campocatino on Fig.

In another example, a white plastic substrate was used as the substrate on which was formed each thin-film transistor. The material of each of the electrodes of the thin-film transistor was replaced by gold. Polyimide film and a polarizing plate were excluded. The clearance between the white plastic substrate and a transparent plastic substrate was filled capsules, in which the particles and the liquid were coated with an insulating coating. In the case of a display having such a structure, the voltage between the elongated stock electrode and a film of indium and tin oxides, above, was controlled by the field effect transistor so that the particles in the capsules are moved in the axial direction. Therefore, the reflectivity of the elongated discharge electrode for display, as seen from the side of the transparent substrate, could be monitored. In another example, many field-effect transistors were formed adjacent to each other, to produce, for example, the normal control circuit current, including four of the transistor and the capacitor. Therefore, the thin-film transistor, represented at 11, could be used as one of the final stage transistors to control the electroluminescent element. For example, was used field-effect transistor using a film made about the seeds indium and tin as a drain electrode. Organic electroluminescent element, including injection layer and the light emitting layer was formed on the area of 30 μm × 90 μm, which was part of the site of films of indium and tin oxides, which has been extruded from the discharge electrode. Thus, it could be made in the display using the electroluminescent element.

(Example 6)

The image elements and field effect transistors, each of which corresponds to the same in example 5, were are two-dimensional. For example, 7425×1790 pixels, each of which includes an imaging element such as a liquid crystal cell or an electroluminescent element and a field effect transistor in example 5, and had an area of 30 μm×115 μm, were arranged in a square shape with a length of 40 μm in the direction of the shorter side and with a distance of 120 μm in the direction of the long side. Then was provided by 1790 the wiring connections of the bolt passing through the electrodes of the shutter 7425 field-effect transistors in the long side direction and was provided 7425 signal wiring passing through part of the source electrodes 1790 thin-film transistor, which were in the region of the amorphous oxide semiconductor film of 5 μm in the direction of the short side. The wiring was connected to the shaper shutter and driver source. In the case of the liquid crystal element is zobrazenie, when color filters, each of which was equal in size liquid crystal display element and aligned with them, were provided on the surfaces of the device, such as red (), green (G) and blue (C) the filters were repeated in the long side direction, could be made active matrix color display (approximately 211 pixels per inch and A4).

In the case of the electroluminescent element between the two field-effect transistors included in the electroluminescent element, the gate electrode of the first field-effect transistor was connected to the line gate, and a source electrode of the second field-effect transistor was connected with the signal line. The wavelength of light emission of the electroluminescent elements were repeated in the following order of K, C and C colors in the long side direction. So could be made light emission color image display having the same sharpness.

Driver to run the active matrix circuit can be manufactured using thin-film transistor in accordance with this embodiment, which is identical to the field-effect transistor in the sense of a pixel or manufactured using existing crystal integrated circuits.

Field-effect transistor in accordance with the present invention may be manufactured by our company is of flexible material, including polyethylene terephthalate film. This means that the shutdown can be carried out in a curved state. In addition, field-effect transistor is transparent to visible light and infrared light, which have a wavelength of 400 nanometers or more, so that the field-effect transistor in accordance with the present invention, can be applied as a switching element of a liquid crystal display or an electroluminescent display. Field-effect transistor in accordance with the present invention can be widely used with a flexible display, display, visible through, the fee for the installation of personal identification cards and the like.

In accordance with the field effect transistor of the present invention a layer of a conducting channel (oxide film) includes part of the source and part of the drain to which you have added hydrogen or deuterium. Alternatively, a layer of a conducting channel (oxide film) is part of the conductive channel containing hydrogen or deuterium and a part of the source and the portion of runoff that have a hydrogen concentration greater than their concentration in part of the conductive channel. Therefore, stable electric connection can be made between the part of the conductive channel and each of the electrodes of the source and drain, improving, thus, the uniformity and reliability of the device. Satisfactory ELEH the electrical connection, resistant to capture charges, can be implemented between each of the electrodes of the source and drain and a conducting channel so that a field-effect transistor having a small hysteresis and excellent stability parameters, can be implemented.

In accordance with the present invention, when made field-effect transistor, hydrogen is added to the oxide film, using the layout of the gate electrode as a template. So part of the source and part of the drain can be formed by the method of samoobladanie with the layout of the gate electrode with the result that the mutual position between the gate, source and drain can be implemented with high precision.

This application claims priority, application Japan patent No. 2006-074630, registered on March 17, 2006, which is incorporated here by reference.

1. Field-effect transistor that includes an oxide film as a semiconductor layer in which the oxide film includes a channel part, stockbuy part and a drain part, and in which the concentration of one of hydrogen or deuterium in stokovoj parts and stock parts higher than that in the channel part.

2. Field-effect transistor according to claim 1, in which Itokawa part and a drain part aligned with the gate electrode and have a coplanar structure.

3. Field-effect transistor according to claim 1, in which the resistance of one of stokovoj parts and stock the parts is 1/10 or less of the resistance of the channel part.

4. Field-effect transistor according to claim 1, in which the oxide film is made of an amorphous oxide that is represented in the following form:
[(Sn1-xM4x)O2]a·[(In1-yM3y)2O3]b·[(Zn1-zM2zO)]c,
where 0≤x≤1; 0≤y≤1; 0≤z≤1; 0≤a≤1, 0≤b≤1, 0≤C≤1 and a+b+C=1;
M4 is an element of group IV that is selected from the group consisting of Si, Ge and Zr, with a serial number of an element is smaller than that of Sn;
MOH is Lu or an element of group III selected from the group consisting of In, Al, Ga and Y, with a serial number of an element is smaller than that In;
M2 is an element of group II, selected from the group consisting of Mg and CA, with a serial number of an element is smaller than that of Zn.

5. A display device, comprising:
the display element includes an electrode; and
field-effect transistor in accordance with claim 1, in which one of stokovoj and stock parts field-effect transistor electrically connected to the electrode of the display device.

6. The device according to claim 5, wherein a set of display elements and a multitude of two-dimensional field-effect transistors located on the substrate.

7. A method of manufacturing a field-effect transistor containing oxide film as a semiconductor layer, and the semiconductor layer includes a channel part, stockbuy part and a drain part, containing the surgery:
the formation of the oxide film on the substrate, and
additive od the CSOs from hydrogen or deuterium to part of the oxide film for forming stokovoj parts and stock parts so the concentration mentioned one of hydrogen or deuterium in stokovoj parts and stock parts higher than that in the channel part.

8. A method of manufacturing a field-effect transistor that includes an oxide film as a semiconductor layer, and the semiconductor layer includes a channel part, stockbuy part and a drain part, containing the surgery:
the formation of the oxide film on the substrate;
forming an insulating film of the gate on the oxide film;
forming a gate electrode on an insulating film shutter and
Supplement one of hydrogen or deuterium to the oxide film using the pattern of the gate electrode as a template to obtain stokovoj parts and stock parts in the oxide film when samoobladanie pattern of the gate electrode so that the concentration mentioned one of hydrogen or deuterium in stokovoj parts and stock parts higher than that in the channel part.

9. Field-effect transistor comprising: an oxide semiconductor layer including a region of a conducting channel;
the gate electrode;
the gate insulator;
the drain electrode and
the electrode of the source,
in which the oxide semiconductor layer further includes a pair of doped regions adjacent to Estocolmo and a drain electrode, each of the doped zones and eat at least one of hydrogen or deuterium, and in which the concentration of one of hydrogen or deuterium in the alloyed zone exceeds that in the area of the channel.



 

Same patents:

FIELD: chemistry.

SUBSTANCE: amorphous oxide compound having a composition which, when said compound is in crystalline state, has formula In2-xM3xO3(Zn1-YM2YO)m, where M2 is Mg or Ca, M3 is B, Al, Ga or Y, 0 ≤ X ≤ 2, 0 ≤ Y ≤ 1, and m equals 0 or is a positive integer less than 6, or a mixture of such compounds, where the said amorphous oxide compound also contains one type of element or several elements selected from a group consisting of Li, Na, Mn, Ni, Pd, Cu, Cd, C, N, P, Ti, Zr, V, Ru, Ge, Sn and F, and the said amorphous oxide compound has concentration of electronic carriers between 1015/cm3 and 1018/cm3.

EFFECT: amorphous oxide which functions as a semiconductor for use in the active layer of a thin-film transistor.

6 cl, 8 dwg

Field transistor // 2390072

FIELD: electricity.

SUBSTANCE: in field transistor, comprising active layer and gate-insulating film, active layer comprises a layer of oxide, comprising In, Zn and Ga, amorphous area and crystalline area. At the same time crystalline area is separated from the first surface of interface, which is surface of interface between a layer of oxide and gate-insulating film, distance of 1/2 of active layer thickness or less, and it within the limits of 300 nm from surface of interface between active layer and gate-insulating film or is in point condition in contact with this surface of interface.

EFFECT: production of field transistor with high drift mobility.

4 cl, 4 dwg, 2 ex

FIELD: electrical engineering.

SUBSTANCE: proposed invention relates to field transistor with oxide semiconductor material including In and Zn. Atomic composition ratio expressed as In/(In+Zn) makes at least 35 atomic percent and not over 55 atomic percent. With Ga introduced into material, aforesaid atomic composition ratio expressed as Ga/(In+Zn+Ga) makes 30 atomic percents or smaller.

EFFECT: improved S-characteristic and drift mobility.

9 cl, 25 dwg

FIELD: physics.

SUBSTANCE: invention relates to an amorphous oxide, used in the active layer of a field-effect transistor. The amorphous oxide, which contains at least one microcrystal and has concentration of electron carriers from 1012/cm3 to 1018/cm3, contains at least one element, chosen from a group consisting of In, Zn and Sn, and the boundary surface of the grains of the said microcrystal is coated with an amorphous structure.

EFFECT: obtaining an amorphous oxide which functions as a semiconductor for use in the active layer of a thin-film transistor.

6 cl, 8 dwg

Field transistor // 2358355

FIELD: physics, radio.

SUBSTANCE: invention is to find application in microelectronics. Concept of the invention is as follows: the proposed field transistor is composed of a source electrode, a drain electrode, a gate insulator, a gate electrode and an effective layer; the effective layer contains an amorphous oxide with an electronic media concentration less than 1018/cm3 and the electronic mobility increasing proportional to the electronic media concentration. Of the source, drain and gate electrodes at least one is visual light translucent with the current flowing between the source and the drain electrodes never exceeding 10 mA unless there is a voltage applied to the gate electrode.

EFFECT: development of a transistor enabling improvement of at least one of the following properties: translucency, thin film transistor electrical properties, gate insulation film properties, leakage current prevention and adhesiveness between the effective layer and the substrate.

21 cl, 12 dwg

FIELD: nanoelectronics and microelectronics.

SUBSTANCE: proposed nanotransistor that can be used in microelectronic and microelectromechanical systems as fast-response amplifier for broadband digital mobile communication means and also for building microprocessors, nanoprocessors, and nanocomputers has semiconductor layer incorporating conducting channel, thin insulator layer disposed on semiconductor surface, gate made on thin insulator surface, drain, and source contacts; semiconductor layer is disposed on bottom insulator layer that covers semiconductor substrate functioning as bottom gate; conducting channel is nano-structured in the form of periodic grid of quantum wires; thin insulator layer encloses each quantum wire of conducting channel on three sides; gate is made in the form of nanometric-width metal strip and encloses each quantum wire of conducting channel on three sides; thin insulator has windows holding drain and source metal contacts connected to channel. Silicon can be used as semiconducting material and thermal silicon dioxide, as insulator.

EFFECT: enhanced degree of integration, reduced size, eliminated short-channel effects, enhanced transconductance, radiation resistance, and environmental friendliness of device manufacture.

4 cl, 2 dwg

FIELD: physics; semiconductors.

SUBSTANCE: invention concerns electronic semiconductor engineering. Essence of the invention consists in the manufacturing method of SHF powerful field LDMOS-transistors, including forming of a primary sheeting on a face sheet of an initial silicon body with top high-resistance and bottom high-alloy layers of the first type of conductance, opening of windows in a primary sheeting, sub-alloying of the revealed portions of silicon an impurity of the first type of conductance, cultivation of a thick field dielectric material on the sub-alloying silicon sites in windows of a primary sheeting thermal oxidising of silicon, creation in a high-resistance layer of a substrate in intervals between a thick field dielectric material of elementary transistor meshes with through diffused gate-source junctions generated by means of introduction of a dopant impurity of the first type of conductance in a substrate through windows preliminary opened in a sheeting and its subsequent diffused redistribution, forming of connecting busbars and contact islands of a drain and shutter of transistor structure on a thick field dielectric material on a face sheet of a substrate and the general source terminal of transistor structure on its back side, before silicon sub-alloying and cultivation of a thick field dielectric material in windows of a primary sheeting a high-resistance layer of a substrate is underetched on the depth equal 0.48 - 0.56 of thickness of a field dielectric material, and before dopant impurity introduction in the formed source crosspieces of transistor meshes in a high-resistance layer of a substrate in sheeting windows etch a channel with inclined lateral walls and a flat bottom depth of 1.5 - 2.6 microns.

EFFECT: improvement of electric parametres of SHF powerful silicon LDMOS transistors and increase of percentage output of the given products.

5 dwg, 2 tbl

FIELD: physics.

SUBSTANCE: invention relates to semiconductor technology. The method of making power insulated-gate field-effect transistors involves making a protective coating with a top layer of silicon nitride on the face of the initial silicon nn+ or pp+ - substrate, opening windows in the protective coating, making channel regions of transistor cells in the high-resistivity layer of the substrate and heavily-doped by-pass layers and source regions inside the channel regions using ion implantation of doping impurities into the substrate through windows in the protective coating and subsequent diffusion distribution of implanted impurities. When making by-pass layers, the doping mixture is implanted into the substrate through windows in the protective coating without using additional masking layers. After diffusion redistribution of implanted impurities in by-pass layers on the entire perimetre of windows in the protective coating, selective underetching of lateral ends of the protective coating under silicon nitride is done. The silicon nitride layer is then removed from the entire face of the substrate and source regions of the transistor cells are formed through implantation of doping impurities into the substrate through windows in the protective coating.

EFFECT: invention is aimed at increasing avalanche break down energy, resistance to effect of ionising radiation and functional capabilities of silicon power transistors.

5 dwg, 1 tbl

FIELD: integrated-circuit manufacture on silicon-on-insulator substrate; transistor structures of extremely minimized size for ultra-high-speed integrated circuits.

SUBSTANCE: proposed method for manufacturing self-aligning planar two-gate MOS transistor on SOI substrate includes production of work and insulator regions of two-gate transistor on wafer surface, modification of hidden oxide, formation of tunnel in hidden oxide, formation of polysilicon gate and drain-source regions; upon formation of insulator and work regions; supporting mask layer is deposited onto substrate surface and ports are opened to gate regions to conduct ionic doping of hidden oxide with fluorine through them; then doped part of oxide under silicon is removed by selective etching to form tunnel in hidden oxide whereupon silicon surface is oxidized in open regions above tunnel and gate is formed; port in supporting layer and tunnel are filled with conductive material, and gate-source regions are produced upon etching supporting layer using gate as mask. Transistor structure channel length is up to 10 nm.

EFFECT: reduced length of transistor structure channel.

2 cl, 1 dwg

FIELD: microelectronics; integrated circuits built around silicon-on-sapphire structures.

SUBSTANCE: proposed method for manufacturing silicon-on-sapphire MIS transistor includes arrangement of silicon layer island on sapphire substrate, formation of transistor channel therein by doping silicon island with material corresponding to channel type, followed by production of gate insulator and gate, as well as source and drain regions; prior to doping silicon island with material corresponding to channel type part of silicon island is masked; mask is removed from part of silicon island of inherent polarity of conductivity upon doping its unmasked portion and producing gate insulator; in addition, part of gate is produced above part of silicon island of inherent polarity of conductivity; source region is produced in part of silicon island of inherent polarity of conductivity and drain region is produced in part of silicon island doped with material corresponding to channel type.

EFFECT: improved output characteristics of short-channel transistor at relatively great size of gate.

1 cl, 7 dwg

FIELD: electronic engineering.

SUBSTANCE: device provided with short channel for controlling electric current has semiconductor substrate to form channel. Doping level of channel changes extensively in vertical direction and keeps to constant values at longitudinal direction. Electrodes of gate, source and discharge channels are made onto semiconductor substrate in such a manner that length is equal or less than 100 nm. At least one of source and discharge electrodes form contact in shape of Schottky barrier. Method of producing MOS-transistor is described. Proposed device shows higher characteristics at lower cost. Reduction in parasitic bipolar influences results to lower chance of "latching" as well as to improved radiation resistance.

EFFECT: improved working parameters.

24 cl, 11 dwg

The invention relates to the field of micro - and nanoelectronics and can be used when manufacturing semiconductor devices and integrated circuits, and devices functional microelectronics

The invention relates to electronic devices and can be used in the manufacture of integrated circuits with increased radiation resistance

The invention relates to a method of manufacturing a nonvolatile semiconductor memory cell (SZ) with a single cell (TF) with the tunnel window, and the tunneling region (TG) using cells (TF) with the tunnel window as a mask to perform at a late stage of tunnel implantation (IT)

FIELD: electronic engineering.

SUBSTANCE: device provided with short channel for controlling electric current has semiconductor substrate to form channel. Doping level of channel changes extensively in vertical direction and keeps to constant values at longitudinal direction. Electrodes of gate, source and discharge channels are made onto semiconductor substrate in such a manner that length is equal or less than 100 nm. At least one of source and discharge electrodes form contact in shape of Schottky barrier. Method of producing MOS-transistor is described. Proposed device shows higher characteristics at lower cost. Reduction in parasitic bipolar influences results to lower chance of "latching" as well as to improved radiation resistance.

EFFECT: improved working parameters.

24 cl, 11 dwg

FIELD: microelectronics; integrated circuits built around silicon-on-sapphire structures.

SUBSTANCE: proposed method for manufacturing silicon-on-sapphire MIS transistor includes arrangement of silicon layer island on sapphire substrate, formation of transistor channel therein by doping silicon island with material corresponding to channel type, followed by production of gate insulator and gate, as well as source and drain regions; prior to doping silicon island with material corresponding to channel type part of silicon island is masked; mask is removed from part of silicon island of inherent polarity of conductivity upon doping its unmasked portion and producing gate insulator; in addition, part of gate is produced above part of silicon island of inherent polarity of conductivity; source region is produced in part of silicon island of inherent polarity of conductivity and drain region is produced in part of silicon island doped with material corresponding to channel type.

EFFECT: improved output characteristics of short-channel transistor at relatively great size of gate.

1 cl, 7 dwg

FIELD: integrated-circuit manufacture on silicon-on-insulator substrate; transistor structures of extremely minimized size for ultra-high-speed integrated circuits.

SUBSTANCE: proposed method for manufacturing self-aligning planar two-gate MOS transistor on SOI substrate includes production of work and insulator regions of two-gate transistor on wafer surface, modification of hidden oxide, formation of tunnel in hidden oxide, formation of polysilicon gate and drain-source regions; upon formation of insulator and work regions; supporting mask layer is deposited onto substrate surface and ports are opened to gate regions to conduct ionic doping of hidden oxide with fluorine through them; then doped part of oxide under silicon is removed by selective etching to form tunnel in hidden oxide whereupon silicon surface is oxidized in open regions above tunnel and gate is formed; port in supporting layer and tunnel are filled with conductive material, and gate-source regions are produced upon etching supporting layer using gate as mask. Transistor structure channel length is up to 10 nm.

EFFECT: reduced length of transistor structure channel.

2 cl, 1 dwg

FIELD: physics.

SUBSTANCE: invention relates to semiconductor technology. The method of making power insulated-gate field-effect transistors involves making a protective coating with a top layer of silicon nitride on the face of the initial silicon nn+ or pp+ - substrate, opening windows in the protective coating, making channel regions of transistor cells in the high-resistivity layer of the substrate and heavily-doped by-pass layers and source regions inside the channel regions using ion implantation of doping impurities into the substrate through windows in the protective coating and subsequent diffusion distribution of implanted impurities. When making by-pass layers, the doping mixture is implanted into the substrate through windows in the protective coating without using additional masking layers. After diffusion redistribution of implanted impurities in by-pass layers on the entire perimetre of windows in the protective coating, selective underetching of lateral ends of the protective coating under silicon nitride is done. The silicon nitride layer is then removed from the entire face of the substrate and source regions of the transistor cells are formed through implantation of doping impurities into the substrate through windows in the protective coating.

EFFECT: invention is aimed at increasing avalanche break down energy, resistance to effect of ionising radiation and functional capabilities of silicon power transistors.

5 dwg, 1 tbl

FIELD: physics; semiconductors.

SUBSTANCE: invention concerns electronic semiconductor engineering. Essence of the invention consists in the manufacturing method of SHF powerful field LDMOS-transistors, including forming of a primary sheeting on a face sheet of an initial silicon body with top high-resistance and bottom high-alloy layers of the first type of conductance, opening of windows in a primary sheeting, sub-alloying of the revealed portions of silicon an impurity of the first type of conductance, cultivation of a thick field dielectric material on the sub-alloying silicon sites in windows of a primary sheeting thermal oxidising of silicon, creation in a high-resistance layer of a substrate in intervals between a thick field dielectric material of elementary transistor meshes with through diffused gate-source junctions generated by means of introduction of a dopant impurity of the first type of conductance in a substrate through windows preliminary opened in a sheeting and its subsequent diffused redistribution, forming of connecting busbars and contact islands of a drain and shutter of transistor structure on a thick field dielectric material on a face sheet of a substrate and the general source terminal of transistor structure on its back side, before silicon sub-alloying and cultivation of a thick field dielectric material in windows of a primary sheeting a high-resistance layer of a substrate is underetched on the depth equal 0.48 - 0.56 of thickness of a field dielectric material, and before dopant impurity introduction in the formed source crosspieces of transistor meshes in a high-resistance layer of a substrate in sheeting windows etch a channel with inclined lateral walls and a flat bottom depth of 1.5 - 2.6 microns.

EFFECT: improvement of electric parametres of SHF powerful silicon LDMOS transistors and increase of percentage output of the given products.

5 dwg, 2 tbl

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