Field transistor

FIELD: electricity.

SUBSTANCE: in field transistor, comprising active layer and gate-insulating film, active layer comprises a layer of oxide, comprising In, Zn and Ga, amorphous area and crystalline area. At the same time crystalline area is separated from the first surface of interface, which is surface of interface between a layer of oxide and gate-insulating film, distance of 1/2 of active layer thickness or less, and it within the limits of 300 nm from surface of interface between active layer and gate-insulating film or is in point condition in contact with this surface of interface.

EFFECT: production of field transistor with high drift mobility.

4 cl, 4 dwg, 2 ex

 

The technical field

The present invention relates to a field effect transistor. In particular, the present invention relates to a field effect transistor using amorphous oxide to the active layer.

The level of technology

In recent years, studies have been conducted technology, in which the active layer of the thin-film transistor (TFT) is used oxide semiconductor. In particular, the amorphous oxide made of InGaZn, may have a higher utility from the point of view of process temperature than amorphous silicon, commonly used for the active layer of the TFT, since the amorphous oxide of InGaZn can be formed into a film at room temperature.

For example, WO 2005/088726 discloses technology in which an active layer of TFT is used amorphous oxide of InGaZn.

Usually it is believed that amorphous silicon has a drift mobility of about 0.5 cm2/·C.

Meanwhile, the above-mentioned WO 2005/088726 reveals the output characteristics of the TFT, in which his active layer is used, the amorphous oxide of InGaZn. According to WO 2005/088726 one variant embodiment shows that the drift mobility in the saturation region of the TFT is approximately 10 cm2/·C.

However, in order to give the opportunity to use a semiconductor made of amorphous oxide instead of having a large manufacturability amorphous credit the Deposit, need for further improvement of its functions.

Disclosure of inventions

Taking into account the above-mentioned circumstances, the present invention is to propose a new field-effect transistor using an amorphous oxide having a high drift mobility.

According to the present invention proposed a field-effect transistor containing:

the active layer, and

the insulating gate film,

moreover, the active layer includes a layer of amorphous oxide containing an amorphous region and a crystalline region, and the crystalline region is close to or in contact with the boundary surface between the layer of amorphous oxide and a gate insulating film.

In this regard, the authors of the present invention conducted intensive studies aimed at further improvement of the drift mobility. The result of these studies, the inventors have found that high drift mobility can be obtained when near the interface with the gate insulating film in a layer of amorphous oxide, which becomes the active layer is a crystalline phase (i.e. crystalline region), and made the present invention. Described later example shows an experiment carried out by forming two active layers, one of which is s has such a crystalline region, present in the amorphous oxide, and the other does not have a crystal region in an amorphous oxide. Then these two active layers compared with each other from the point of view of the drift mobility.

Brief description of drawings

Figure 1 represents the image of the cross-section in PAM for explanation of the present invention;

Figure 2 is a schematic view of a cross-sectional view for explanation of the present invention;

Figure 3 is a schematic view of a cross-sectional view for explanation of a field-effect transistor according to the present invention; and

Figure 4 represents the image of the cross-section in PAM for explanation of the comparative example.

The preferred embodiment of the invention

The present invention is characterized by the fact that the active layer 210 field-effect transistor formed from a layer 217 amorphous oxide, as shown in figure 2, and in this layer 217 amorphous oxide is crystalline region 215 so that it was located near the interface with the gate insulating film 220 or in contact with the surface of section. In other words, the active layer 210 is formed (is) of the amorphous region and the crystalline region and the crystalline region 215 is present in the layer of amorphous oxide so that it was located near the surface of the section is an aircraft with a gate insulating film 220 or in contact with the surface of the partition.

In the later example the example uses the oxide consisting of In, Ga and Zn. The above-mentioned crystalline region 215 is not present near the second surface 260 of the partition opposite the first surface section 250, which is a boundary surface between an amorphous oxide and a gate insulating film.

The details concerning the reasons for which a crystalline region or microcrystalline region is formed in an amorphous oxide, in particular in the above-described location are unclear, but are treated as attributable to the composition of the oxide, the oxygen concentration during production, the temperature of deposition, the material of the insulating film or production method.

In the example which will be described later, it was confirmed that the crystalline region appeared in a special location when you change, in particular, the condition of an oxygen atmosphere on the specific composition during production of the transistor.

In General, the amorphous oxide functioning as a semiconductor, it is difficult to find a suitable composition and manufacturing conditions, which would be used for the active layer of the transistor.

However, according to the present invention was found the following guiding principle. Namely, it is possible to manufacture a transistor with high drift mobility, by creating a crystalline region near the boundary surface or location which is in contact with the surface of section in the amorphous layer, with the formation of the active layer.

The reason in the present invention the crystalline region is only present near the interface with the gate insulating film, without distribution of the crystalline region in the thickness direction of the entire amorphous oxide, assume the following.

Even in amorphous oxide as the thickness of the supported layer is increased, can accumulate voltage or may be supplied with energy on the side surface of the amorphous oxide when forming the insulating film. In addition, depending on the composition of the amorphous oxide, the occurrence of crystallization may be likely or unlikely. The composition of the amorphous oxide, as shown in the example which will be described later, may be just close to the composition, which easily undergoes crystallization. This is the reason why the crystalline region is only present near the interface with the gate insulating film.

Thus, during the formation of the film properties of the film (surface condition, electrical conductivity, thermal conductivity, and the like) are changed, and thereby becomes high who is very useful for nucleation of crystallization centers on the film surface, in some cases, easily leading to crystallization. Even when the original film has an amorphous structure, it is assumed that the amorphous structure, closer to the crystal, has a higher possibility of generating the above-described phenomenon (which during the formation of a film crystallization starts).

According to the present invention, the crystalline region exists on the boundary surface or near the" gate insulating film, and thus, the region for forming a channel in the active layer-side gate insulating film becomes amorphous structure, closer to the crystal structure, among all the amorphous structure. Due to the presence of such a specific structure, although it is amorphous, it is possible to obtain an amorphous structure having excellent characteristics closer to the characteristics of the crystal. On the other hand, since the crystalline region exists mainly in the point condition, almost all of the routes the channel is an amorphous region, and therefore, it is assumed that the decrease in mobility due to grain boundary can be prevented.

On the contrary, the crystalline region exists in the region, and part of the area on the surface of the partition or near the" gate insulating film, and thus, the area on the I channel formation in the active layer-side gate insulating film does not always become an amorphous structure, closer to the crystal structure, among all the amorphous structure. In accordance with this it is assumed that it is not always possible to obtain an amorphous structure having excellent characteristics closer to the characteristics of the crystal.

When all the active layer, there is a polycrystal or microcrystal that differs from the present invention, it is assumed that the mobility is reduced because there is a grain boundary. In particular, it is assumed that with increasing grain size, the problem arises, namely, that there is a dependence of the orientation of the crystals from each of the characteristics, which reduces the uniformity of these characteristics.

According to the present invention a method of forming a crystalline region only "on the boundary surface or near the" gate insulating film includes a method of forming a crystalline region samosoglasowannye way without intentionally altering the conditions of formation of a film during film formation, a method of forming a crystalline region with an intentional change of the conditions of formation of a film during film formation, etc. However, if the formation of the crystal formation, etc. is inconvenient, the method is not particularly limited.

In the method of formation to istoricheskoi region samosoglasowannye way without intentionally altering conditions for forming the film during formation of a film used the case when in the course of forming the film properties of the film (surface condition, electrical conductivity, thermal conductivity, and the like) are changed easily causing crystallization. For example, although the conditions of forming the film is not changed during film formation, the film formation controlling the conditions of the process of crystallization (modify film properties conditions) allows you to form a crystalline region only "on the boundary surface or near the" gate insulating film.

In the method of forming a crystalline region with an intentional change of the conditions of formation of a film during formation of a film using such conditions of formation of the film, as the temperature of the substrate, the speed of forming the film, the power in the formation of the film. Thus, the conditions of forming the film for easy crystallization are to increase the temperature of the substrate, to reduce the rate of formation of the film, to reduce power during formation of a film, etc. Thus, the intentional change of the conditions of formation of a film during the formation of the film can form a crystalline region only "on the boundary surface or near the" gate insulating film. Because these conditions are different depending on conditions such as the design of the device is istwa the formation of a film, it is important to pre-test the formation of the film, to obtain the ratio between the conditions of film formation and crystallization of the deposited film and to manage these conditions on the basis of the obtained results.

Amorphous oxide used in the present invention contains, for example, In, Zn and Ga.

The crystalline region is a crystalline region of the active layer observed through technology learning cross-section transmission electron microscope (TEM).

Field-effect transistors according to the present invention include not only the transistors with stepwise and backward stepwise arrangement of the electrodes, but also the transistors coplanar and opposite coplanar arrangement of the electrodes.

The thickness of the layer of amorphous oxide serving as an active layer according to the present invention may preferably amount to 0.05 μm or more and 1 μm or less.

The layer thickness of the amorphous oxide is determined according to the following reasons. Crystalline region according to the present invention has a transverse diameter of less than 0.05 microns. Therefore, when the active layer has a thickness less than 0.05 μm, there is a big difference in performance between the TFT including a crystalline region in its channel TFT that does not include includes a crystalline region in its channel. In addition, when the thickness is more than 1 μm, the layer of amorphous oxide requires a long time for film formation, therefore, the thickness of more than 1 μm is not suitable for the mass production process.

In the case of the active layer formed of an amorphous oxide having a crystalline region near the interface with the gate insulating film, it is preferable to fabricate the transistor so that the portion serving as the channel of the transistor, not included such crystalline region, taking into account the elimination of the differences in operating characteristics between the transistors.

In addition, in the present invention after forming a layer of amorphous oxide according to the present invention it is also possible, if necessary, to remove at least part of the region containing the crystalline region, which exists in part of the surface layer this layer is an amorphous oxide. When the layer of amorphous oxide form another layer, such processing may manage the existing number and condition of distribution of the crystalline region existing at the interface between these layers, to thereby strengthen the coordination of the interface.

The term "near the surface of the section" in the present invention means an area in PR is Affairs a distance of 1/2 of the thickness of the active layer from the surface of the partition although it depends on the thickness of the active layer, and within 300 nm, preferably 100 nm, and more preferably 50 nm from the interface between the active layer and the gate insulating layer.

Additionally, it is assumed that when the thickness of the region near the interface of the present invention is a region having a thickness equal to or greater than the thickness of the channel, the present invention becomes more effective.

Example

Below will be explained a specific method of manufacturing the field-effect transistor according to the present invention.

(1) the Manufacture of the active layer

First prepared substrate made of quartz glass SiO2(mark 1737 production Corning Incorporated) as a substrate on which to Deposit the film. Then by means of high-frequency (RF) ion sputtering layer formed of an amorphous oxide, consisting of In, Zn and Ga.

At the same time as the target material used polycrystalline sintered body of the oxide InGaZn. As the device high-frequency ion sputtering used a device SH-350 (manufactured by ULVAC, Inc.), in which may be placed a set of target substrates. RF power was set to 300 W, the pressure of formation of the film (i.e. the total pressure was set to 4 mtorr (i.e. approximately of 0.533 PA)and temperature on the spoons in a special way not increased.

Atmosphere the formation of a film made a mixed gas atmosphere of oxygen and argon. The partial pressure of oxygen in the stream was set to 3.7 per cent (i.e. about 0,0197 PA). The distance between the target and the substrate was set to approximately 5 cm in the vertical direction, and then completed the formation of the film. The film formation was completed at the moment when the thickness of the layer of amorphous oxide was equal to 50 nm.

The layer composition of the obtained amorphous oxide represented In:Ga:Zn=1:0,9:0,65 according to the results of x-ray fluorescence analysis.

(2) the Manufacture of the field MOS transistor

Then he was made a field MOS transistor with a top gate, shown in figure 3. The transistor manufactured in such a way that the channel length and channel width were set to 10 μm and 150 μm, respectively.

On the above substrate by electron beam deposition formed film 283 Ti (film thickness: 5 nm) and the film 281 Au (film thickness: 40 nm) in this order, and then subjected them to the formation of the figure (structuring) to obtain the picture shown in figure 3. As a result there is formed a source electrode and a drain electrode. After that, on the part of both of these electrodes are formed, the resist (not shown), which was subjected to the formation of the picture, and put a layer 210 of amorn the first oxide by means of high-frequency ion sputtering. After that, as a gate insulating layer formed film 220 Y2O3(film thickness: 140 nm) by means of high-frequency ion sputtering, as mentioned above.

Once completed exfoliation by removing the resist, the resist formed again, completed the formation of the image, and then the formed electrode 230 shutter consisting of a film 233 Ti and film 231 Au, in the same way as the drain electrode, etc. may be obtained TFT with a top shutter. The formation of the electrodes and gate insulating film is performed in a state where heating is not specifically implemented. The structure of the electrode 230 of the gate was the same as that of the electrode of the source.

(3) performance Evaluation and evaluation of the structure of the field MOS transistor

Voltage-current characteristic so manufactured TFT was determined at room temperature. With increasing voltage VDSdrain current IDSrunoff increased, and this indicates that the channel is an n-type semiconductor. In addition, it was shown the behavior of a typical semiconductor transistor, in which the state of the cut-off (saturation) occurs when the voltage VDSflow reached approximately the 6th Century In the study of the characteristics of the amplification threshold voltage VGSshutter during application of the voltage VDShundred the and 6 was about +1 V. In addition, there was a current IDSflow of 7.5×10-5And, when the voltage VGSshutter was equal to 4 Century

Attitude levels in the on and off States of the transistor exceeded 106. On the output characteristic in saturation calculated drift mobility, which amounted to about 15.7 cm2/·C, thereby obtaining a high drift mobility.

Then, the transistor having such a high drift mobility was studied in cross section by TEM technology. Namely, the cross-section of a transistor formed using focused ion beam (used the device FB-2000 production Hitachi, Ltd.) and have studied him through PAM technology. To explore the used microscope (H-800 production Hitachi, Ltd. Figure 1 shows the image of its cross-section TEM. Figure 1 is a layer of oxide InGaZn is located between the substrate and the insulating film. In addition, the oxide layer includes crystal grains in or around the area near the interface with the insulating film.

(4) Comparative example

For comparison with the above example produced the transistor under the same conditions as in example, except that the partial pressure of oxygen during the formation of the layer of amorphous oxide was changed to 3.4% (i.e. 0,018 PA). Transistorization cross section through the above-mentioned TEM technology. As shown in figure 4, the crystalline region in the layer of amorphous oxide was not present. The composition of the active layer was almost the same as in the above example.

Evaluated the characteristics of the transistor, finding that the drift mobility was approximately 10 cm2/·In the area of saturation. This value is lower than the above-mentioned transistor of example.

As evident from above, from the point of view of the drift mobility is preferable to form the active layer so that the amorphous oxide contained crystalline region near the interface with the gate insulating layer.

Industrial applicability

The present invention is applied to the transistor for a display device with liquid crystal or light-emitting layer, such as organic electroluminescent (EL) layer or inorganic electroluminescent (EL) layer. In addition, the transistor according to the present invention can be manufactured by forming a film at low temperature and, thus, can be manufactured on a flexible substrate made of resin (polymer), plastics, etc. So the transistor can appropriately be used to perform a circuit Board for mounting integrated circuits (IC), identification tags or labels, etc.

The effect of the invention

According to astasia the invention can be provided with the transistor, having a high drift mobility.

This application claims the priority of patent application of Japan No. 2005-323689, filed November 8, 2005, and claims the Japan patent No. 2006-283893, filed October 18, 2006, which are hereby incorporated herein by reference.

1. Field-effect transistor comprising: an active layer and a gate insulating film, and the active layer contains an oxide containing In, Zn and Ga, and contains an amorphous region and a crystalline region and a crystalline region separated from the first surface section, which is a boundary surface between the oxide layer and the gate insulating film, the distance in the1/2or less of the thickness of the active layer and within 300 nm from the interface between the active layer and the gate insulating film or in the point condition in contact with the surface of the partition.

2. Field-effect transistor according to claim 1, in which the crystalline region is absent in the vicinity of the second surface section opposite to the first surface section, which is a boundary surface between the oxide layer and the gate insulating film.

3. Field-effect transistor according to claim 1, in which the oxide layer consists of an oxide containing In, Zn and Ga.

4. Field-effect transistor according to claim 1, in which the oxide layer has a thickness of 0.05 μm or more and 1 μm.



 

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