Klystron type superhigh frequency device

FIELD: physics; radio.

SUBSTANCE: invention concerns electronic engineering, in particular to the electrovacuum microwave devices intended for reception of microwave capacity on two multiple frequencies also can be used, for example, in the accelerating technics, radar-location, radio countermeasure. The klystron-type microwave device contains the cylindrical target double-gap cavity (TDC), adjusted on an antiphase kind of fluctuations with an operating frequency co and on an inphase kind of fluctuations with an operating frequency 2ω. The device for microwave energy output contains, at least, two square-topped wave guides, connected with the TDC accordingly through the first and second coupling windows. The first coupling window is located between face walls of the target double-gap cavity equally spaced from them and allocated from a communication slot in a TDC conducting plate. The second coupling window is located from a continuous site of the conducting plate and located between the conducting plate and one of face walls of the output TDC opposite to corresponding high-frequency spacing. The sizes of wide walls of square-topped wave guides are chosen from the set conditions. The microwave device can contain a band elimination filter connected to the second square-topped wave guide.

EFFECT: increase of efficiency and expansion of functionality of the microwave device.

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The invention relates to electronics, in particular to vacuum microwave devices, intended for the production of microwave power on two multiple frequencies, and can be used, for example, in accelerator technology, radar, radioprotective and in other areas of technology.

It is known that in vacuum microwave devices O-type, for example in the amplifying klystrons, when grouping the electron flow generated electron current bunches with a repetition frequency equal to the frequency ω of the input microwave signal to the microwave device, and a duration of about 0.1 repetition period, and the electron current bunches contain a wide range of harmonic currents. Grouped electronic clots came out of the anomaly of the klystron, fall in the high q output resonator, tuned to the operating frequency ω. In the output resonator is the extraction of energy from grouped electron flow, which is in the form of the output microwave signal frequency ω is transmitted through the output of microwave energy to the load. Thus, at the output of the conventional klystron receive the amplified microwave power at the same operating frequency ω.

Known microwave device klystrons type containing electronic gun, the input, intermediate and output odnosezonnye resonators, tuned to the operating frequency ω and at least one additionally the th dvojnasobny resonator, located in the drift tube between the resonators operating frequency, and a collector, the input and output microwave energy [1]. Additional duhsasana the resonator (which is part of a grouper microwave instrument) the interaction of the electron stream with the microwave fields of the resonator is performed sequentially in two high-frequency (HF) gaps, which increases the efficiency of interaction of microwave fields with the electron beam compared with odnostoronnim resonator. Additional dvojnasobny resonator is configured to multiples of frequency ω and 2ω, corresponding antiphase and in-phase oscillations. As a result, the electron flux in duhsasana the resonator affects the microwave voltage close to the ramp that leads to more efficient grouping of the electron flow. In this duhsasana resonator work as antiphase oscillations is kind of oscillation at the operating frequency ω, and phase appearance of oscillations at frequency 2ω is used only for better grouping of the electron flow. In the output odnosesamo resonator, tuned to the operating frequency ω, is the extraction of energy from effectively grouped electron flow, through which the output of microwave energy is transmitted to the load. Thus, in the known microwave-enhanced device, power is delivered to the load only working on the th frequency ω, that limits the scope of its application. To receive microwave power of two multiples of the frequencies ω and 2ω, you must use two microwave device klystrons type, one of which operates at a frequency ω, and the second at a frequency equal to 2ω. In addition, when using hardware two microwave devices with different operating frequencies must be entered in the equipment options for the phasing of the output signals of these microwave devices.

Known umerically the klystron containing electronic gun, resonators with adjacent tubes, the collector, as well as a device for input of microwave energy and a device for outputting microwave energy [2]. In this klystron grouped electronic clots coming out of the bunching cavity that is configured on the frequency ω, are sent to the output resonator, tuned to the frequency nω (where n=2, 3, ...). In the output resonator is the extraction of energy from grouped electron flow, which is in the form of the output microwave signal frequency nω is transmitted through the output of microwave energy to the load. Thus, the output omnitele of klystron receive microwave power only on one of the frequencies that are multiples of ω.

Known microwave device klystrons type (prototype)containing electron gun, a cylindrical resonators with adjacent tubes, the collector, as well as a device for input of microwave energy and a device for outputting the RF energy [3]. The input and intermediate resonators operating frequency ω is made odnosezonnye, and the output resonator made duhsasana. Output dvojnasobny resonator contains arranged coaxially to each other Central Asian tube attached to the side wall of the resonator by using located between its end walls of the conducting walls, which made the communication gap, and two end spans of pipe secured in the opposite end walls of output duhsasana cavity and separated from the Central passage of the high frequency pipe clearances.

Device to output microwave energy includes serially connected passive resonator (in the form of a segment of a rectangular waveguide and an output waveguide connected to each other through the communications window in their common wall. The passive resonator is also connected with the output duhsasana resonator microwave device via the communications window in the side wall of the output duhsasana cavity located between the conductive wall and the front wall of the resonator located from a collector of the microwave device. Use in the microwave device of the passive resonator associated with the output duhsasana resonator, can further extend the bandwidth of the microwave device. Output dvojnasobny resonator of the microwave device is configured on two main types of vibrations the deposits (antiphase and in-phase) with close frequencies. When applying to the input of the microwave device of the input microwave signal with a frequency ω in the output duhsasana the cavity of the microwave device excited microwave oscillations at the frequency of the input microwave signal, with enhanced power output of the microwave device is also only the working frequency ω.

The objective of the invention is to provide a microwave device klystrons type, providing when applying to the input of the microwave device of the microwave signal with a frequency ω, obtaining at the output of the microwave oscillation simultaneously on two multiple frequencies ω and 2ω.

Features microwave device klystrons type containing electronic gun, resonators with adjacent tubes, the collector, the device for introducing microwave energy waveguide and a device for outputting microwave energy, and executed in the form of a hollow cylinder output dvojnasobny the resonator contains a Central passage tube, coaxially disposed between the fixed to the end walls of the resonator two adjacent tubes and separated from them by a high-frequency gaps, the Central span of the pipe attached to the side wall of the output duhsasana resonator using located between its end walls and parallel to them conductive walls, which made at least one slit communication when this output dvojnasobny resonator is configured to antiphase type oscillations with frequent working is the ω and phase type oscillations with frequency 2ω, the waveguide device to output microwave energy contains installed on the outer side of the output duhsasana resonator of the first and second rectangular waveguides, the longitudinal axes of which are perpendicular to the longitudinal axis of the output duhsasana resonator, the first and second rectangular waveguides connected to the output duhsasana resonator through the first and second communications window in the side wall of the output duhsasana resonator located coaxially with the respective rectangular waveguides, and the first connection box placed side slits connection in the conductive partition output duhsasana cavity and located between the end walls of the output duhsasana resonator equidistant from them, the second communications window posted by solid plot conductive walls and located between the conductive wall and one end wall of the output duhsasana resonator opposite to the corresponding high-frequency gap, the wide side of the first and second rectangular waveguides are parallel to the side walls of the output duhsasana resonator, and the sizes of the wide walls of the first and second rectangular waveguides, a1and a2choose terms and conditions

λ/4<a1<λ/2,

λ/2<2<λ,

λ=C/ω,

where a1- the size of the Shire is coy wall of the first waveguide,

and2- the size of the wide side of the second waveguide,

λ is the working wavelength antiphase type oscillation output duhsasana resonator,

ω is the operating frequency antiphase type oscillation output duhsasana resonator,

C is the speed of light.

In the proposed microwave device klystrons type can be entered in the notch filter, made in the form of short-circuited at the end of the segment additional rectangular waveguide located on the outer side of the second rectangular waveguide perpendicular to its wide side, which made the gap of communication these waveguides located perpendicular to the narrow side of the second rectangular waveguide and parallel to the wide side for more of a rectangular waveguide, and the size of the extra wide side of the rectangular waveguide and1and the distance from the outer plane of the wide side of the second rectangular waveguide to the inner plane of the short-circuited end of the additional rectangular waveguide L1choose terms and conditions:

and1=a1,

.

Features microwave device klystrons type, in which a conductive partition output duhsasana resonator made two slits connection located symmetrically relative to the longitudinal axis of the output two is atomnogo cavity and separated from each other by a continuous conductive areas of the septum, the first communications window in the side wall of the output duhsasana resonator placed by one of the slits connection in the conductive partition output duhsasana resonator, and a second window link posted by one of continuous sections of a conducting partition.

Features microwave device klystrons type, in which a conductive partition output duhsasana resonator made two slits connection located symmetrically relative to the longitudinal axis of the output duhsasana cavity and separated from each other by a continuous conductive areas of the septum, the waveguide device to output microwave energy further comprises mounted on the outer side of the output duhsasana resonator perpendicular to its longitudinal axis, the third rectangular waveguide associated with the output duhsasana resonator through located coaxially third rectangular waveguide third communications window in the side wall of the output duhsasana resonator, the first communications window in the side wall of the output duhsasana resonator situated on the side of the first slit communication in the conductive partition output duhsasana resonator, a second window link posted by one of continuous sections of a conducting partition, and the third link window, situated on the side of the second slit St. the zi in the wall and located between the end walls of the output duhsasana resonator equidistant from them, the wide side of the third rectangular waveguide are parallel to the side walls of the output duhsasana resonator, the size of the wide side of the third rectangular waveguide and3choose terms and conditions

λ/4<3<λ/2,

λ=C/ω,

where a3- the size of the wide side of the third waveguide,

λ is the working wavelength antiphase type oscillation output duhsasana resonator,

ω is the operating frequency antiphase type oscillation output duhsasana resonator,

C is the speed of light.

Features microwave device klystrons type, in which a conductive partition output duhsasana resonator made two slits connection located symmetrically relative to the longitudinal axis of the output duhsasana cavity and separated from each other by a continuous conductive areas of the septum, the waveguide device to output microwave energy further comprises mounted on the outer side of the output duhsasana resonator perpendicular to its longitudinal axis, a fourth rectangular waveguide associated with the output duhsasana resonator through located coaxially fourth rectangular waveguide fourth communications window in the side wall of the output duhsasana resonator, the first communications window in the side wall of the output duhsasana R is sonatore posted by one from cracks connection in the conductive partition output duhsasana resonator, the second and fourth connections window located between the conductive partition and installed from the grooms side of the first resonator end wall of the output duhsasana resonator opposite the first high-frequency gap or between the conductive partition and installed from a collector of the second end wall of the output duhsasana cavity opposite the second high-frequency gap, while the second window link posted by one of continuous sections of a conducting septum output duhsasana resonator and the fourth window of communications posted by other solid plot conductive septum output duhsasana resonator, the wide side of the fourth rectangular waveguide are parallel to the side walls of the output duhsasana resonator, the size of the wide side of the fourth rectangular waveguide

and4choose terms and conditions

λ/2<a4<λ,

λ=C/ω,

where a4- the size of the wide side of the fourth waveguide,

λ is the working wavelength antiphase type oscillation output duhsasana resonator,

ω is the operating frequency antiphase type oscillation output duhsasana resonator,

C is the speed of light.

Features microwave device klystrons type, in which a conductive partition output is about duhsasana resonator made two slits communication they are located symmetrically relative to the longitudinal axis of the output duhsasana cavity and separated from each other by a continuous conductive areas of the septum, the waveguide device to output microwave energy further comprises mounted on the outer side of the output duhsasana resonator perpendicular to its longitudinal axis, a fourth rectangular waveguide associated with the output duhsasana resonator through located coaxially fourth rectangular waveguide fourth communications window in the side wall of the output duhsasana resonator, the first communications window in the side wall of the output duhsasana resonator placed by one of the slits connection in the conductive partition output duhsasana resonator, the second communications window is located between the conductive partition and installed by grooms cavity of the first end wall of the output duhsasana resonator opposite the first high-frequency gap, the fourth connection box is located between the conductive partition and installed from a collector of the second end wall of the output duhsasana cavity opposite the second high-frequency gap, while the second and fourth connections window hosted by one of continuous sections of a conducting septum output duhsasana the th resonator or the second window link posted by one of continuous sections of a conducting septum, and the fourth window link posted by another solid plot conductive septum output duhsasana resonator, the wide side of the fourth rectangular waveguide are parallel to the side walls of the output duhsasana resonator, the size of the wide side of the fourth rectangular waveguide and4choose terms and conditions

λ/2<a4<λ,

λ=c/ω,

where a4- the size of the wide side of the fourth waveguide,

λ is the working wavelength antiphase type oscillation output duhsasana resonator,

ω is the operating frequency antiphase type oscillation output duhsasana resonator,

C is the speed of light.

In the proposed microwave device klystrons type can be entered a second notch filter, made in the form of short-circuited at the end of a segment of a second rectangular waveguide located on the outer side of the fourth rectangular waveguide perpendicular to its wide side, which made the gap of communication these waveguides located perpendicular to the narrow side of the fourth rectangular waveguide and parallel to the wide side of a second rectangular waveguide, and the size of the wide side of a second rectangular waveguide and2and the distance from the outer plane of the wide wall of the fourth rectangular waveguide to the inner plane of the short-circuited end of a second rectangular waveguide L 2choose terms and conditions:

and2=a1,

.

In the present invention the output dvojnasobny resonator of the microwave device is configured to antiphase appearance of oscillations with frequency ω and phase type oscillations with frequency 2ω. Thus, when applying to the input of the microwave device input signal with frequency ω in the output duhsasana resonator simultaneously occur microwave oscillations of two basic types of vibrations when passing their frequencies per octave. Consequently, in the output duhsasana resonator interact grouped electron flow with microwave fields are two basic types of oscillation of the resonator at the same time, that is, the power takeoff from the electron flow occurs simultaneously on two types of oscillations (in multiples of two frequencies ω and 2ω, and not on the same frequency ω, as in the known constructions of microwave devices), which increases the efficiency of the power takeoff from the electron flow. The setting of the anti-phase type oscillation output duhsasana resonator at the frequency ω, and phase types of oscillations at frequency 2ω allows you to create conditions for optimal interaction between an electron beam with microwave fields these kinds of fluctuations of the output duhsasana resonator and, hence, for the optimal selection of microwave power from the e-p is current on these two types of oscillations at the same time. Thus the value of microwave power obtained at the output of the microwave device at frequencies ω and 2ω, significantly exceeds the amount of microwave power fed to the input of the microwave device that improves the efficiency of the microwave device.

Execution of the waveguide device to output microwave energy in the form of rectangular waveguides connected to the output duhsasana resonator through a window in the side wall of the resonator, and given the relative locations of the waveguides, Windows, communication and output duhsasana resonator allow optimal output power from the output duhsasana resonator of the microwave device in the load on the two multiple frequencies ω and 2ω at the same time.

So the location of the first window in the side wall of the output duhsasana resonator equidistant from its end walls and placement of this window with side slit connection in the conductive partition output duhsasana resonator creates conditions for the emergence of displacement currents in the first window of communication with the flow microwave currents in phase with the type of fluctuations on the inner surface of the side wall of the output duhsasana resonator that provides optimum output power from the output duhsasana resonator at frequency 2ω, the corresponding in-phase mean oscillation duhsasana resonator. The power at frequency ω corresponding to ratiwatana mind oscillation output duhsasana resonator, will not be output from the resonator in the first rectangular waveguide, since the current on the inner surface of the side wall of the cavity of the microwave currents in opposite phase type oscillations do not induce displacement currents in the first window connection.

Size selection of the wide side of the first waveguide a1within the specified limits (λ/4<a1<λ/2) propagates in the first waveguide wave H10at frequency 2ω, the corresponding in-phase mean oscillation. If the size of the wide side of the first waveguide a1there will be more than λ/2, the waveguide will be subject to two types of waves N10and H20. If the size of a1will be less than λ/4, the waveguide becomes prohibitive for all types of waves at the frequency 2ω. Moreover, the choice of the size of the wide side of the first rectangular waveguide a1according to the above specified condition makes the first rectangular waveguide prohibitive for microwave oscillations with frequency ω corresponding to antiphase kind of hesitation.

The location of the second window in the side wall of the output duhsasana cavity between the conductive wall and one end wall of the cavity opposite to the corresponding high-frequency gap, and by a continuous section of a conducting septum output duhsasana resonator creates conditions in which znackovania displacement currents in the second window of communication with the flow microwave currents in opposite phase with the type of fluctuations on the inner surface of the side wall of the resonator, ensuring optimum output power from the output duhsasana resonator at frequency ω corresponding to antiphase mind oscillation output duhsasana resonator. While in the second communications window will be picking up the bias currents common-mode types of oscillations, that is, via the second communications window will be displayed to the second waveguide part and the power at the frequency 2ω, the corresponding in-phase mean oscillation output duhsasana resonator.

Size selection of the wide side of the second waveguide and2within the specified time limit (λ/2<a2<λ) propagates in the waveguide wave H10at frequency ω, corresponding antiphase mind fluctuations. If the size of the wide side of the second waveguide and2there will be more than λ, then the second waveguide will be subject to two types of waves N10and H20. If the size and2will be less than λ/2, the waveguide becomes prohibitive for all types of waves at frequency ω. In addition, when selected within the specified limits the size of the wide side of the second rectangular waveguide and2in this waveguide will be distributed microwave oscillations with frequency 2ω, the corresponding in-phase type of hesitation.

If necessary, the output power from the output duhsasana cavity through a second communications window and the second rectangular waveguide t is like at frequency ω, the corresponding antiphase mind oscillation output duhsasana resonator in the design of microwave device in addition enter the notch filter in the form of short-circuited at the end and made the required dimensions of the wide side and the length of the additional rectangular waveguide mounted on the outer side of the second rectangular waveguide perpendicular to its wide side, with additional rectangular waveguide and the second rectangular waveguide connected to each other through the gap of communication in this wide side of the second waveguide. Introduction notch filter provides a cut-off power at frequency 2ω, resulting in a frequency of 2ω output power does not extend in the second rectangular waveguide and misses the load.

Thus, at the output of the proposed microwave device can provide:

- or get a second rectangular waveguide power at frequencies ω and 2ω (i.e. receiving the output of the microwave device of the microwave oscillations simultaneously on two multiple frequencies ω and 2ω a common output channel) and at the same time getting in the first rectangular waveguide power at frequency 2ω, which is impossible to realize on any of the known microwave devices klystrons type

- or get a second rectangular waveguide power at frequency ω and odnovremenno.menyu in the first rectangular waveguide power at frequency 2ω (i.e. receiving the output of the microwave device of the microwave oscillations simultaneously on two multiple frequencies ω and 2ω, but in two different output channels of the microwave device), resulting in a proposed microwave device can replace two well-known microwave device klystrons type, one of which provides reception of microwave power at a frequency ω, and the other receiving microwave power at a frequency of 2ω, we offer the microwave device does not require the use of additional devices for the phasing of the output of the microwave oscillation at frequencies ω and 2ω, as proposed in the microwave device is automatic phasing of these microwave oscillations.

This allows you to extend the functionality of the microwave device klystrons type (both low and high power levels) and to ensure the use of this instrument in many areas of engineering, such as design of microwave device without notch filter can be used, for example, jamming systems, and design of microwave device with rejection filter can be used, for example, in accelerator technology and radar systems.

In addition, if the conductive partition output duhsasana resonator offer microwave device has more than one slot connection, the number of output channels of the microwave device (i.e., the number associated with the output duhsasana resonator of rectangular waveguides) can be increased, thereby reducing the power level in each of the C output channels, and as a consequence, to increase the dielectric strength and reliability of the microwave device, and also to extend its functionality.

The invention is illustrated by drawings.

Figure 1 shows a longitudinal and cross-section a-a section of the proposed microwave device klystrons type containing the output dvojnasobny resonator with a single communication gap in the conductive wall and associated with the output duhsasana resonator of the first and second rectangular waveguides device to output microwave energy.

Figure 2 shows longitudinal and cross-section a-a section of the proposed microwave device klystrons type containing the output dvojnasobny resonator with two slits connection in the conductive wall and associated with the output duhsasana resonator of the first and second rectangular waveguides device to output microwave energy.

Figure 3 shows the cross-section of the proposed microwave device klystrons type containing the output dvojnasobny resonator with two slits connection in the conductive wall and associated with the output duhsasana resonator of the first, second and third rectangular waveguides device to output microwave energy.

Figure 4 shows a cross-section of the proposed microwave device klystrons type containing the output dvojnasobny resonator with two slits communication in conducting perehara the ke and associated with the output duhsasana the first resonator, the second and fourth rectangular waveguides device to output microwave energy.

Figure 5 shows time diagrams of the distribution of the microwave voltage U1and U2respectively in the first and second RF output gaps duhsasana resonator for antiphase type oscillations with frequency ω and phase type oscillations with a frequency of 2ω.

Figure 6 shows the timing chart of the distribution of the microwave voltage U1and U2respectively in the first and second RF output gaps duhsasana resonator for antiphase type oscillations with a frequency of 2ω and for common mode type oscillations with frequency ω.

The proposed microwave device klystrons type, one design of which is shown in figure 1, contains an electronic gun 1, an input resonator 2, the intermediate resonators 3, forming in conjunction with the resonator 2 grouper electron bunches, the output dvojnasobny resonator 4 and collector 5, and a device for introducing microwave energy in the form of a coaxial transmission line 6 and the device to output microwave energy containing installed on the outer side of the output duhsasana resonator 4 of the first 7 and second 8 rectangular waveguides. The first 7 and second 8 rectangular waveguides connected to the output duhsasana resonator 4 respectively through the first 9 and second 10 connections window, the imp is United in the side wall 11 of the resonator 4. Each of the resonators 2-4 executed in the form of a hollow cylinder, which contains the mounted coaxially with and fixed to the end walls of the cavity span pipe 12, which is executed span channels 13. Output dvojnasobny resonator 4 further comprises a coaxially located Central passage pipe 14, which is also made of the span channels 13. The Central span of the pipe 14 is attached to the side wall 11 of the output duhsasana resonator 4 is located between the first 15 and second 16 end walls of the resonator 4 and parallel to them conductive partition 17 in the peripheral part of which is a slot connection 18 adjacent to the side wall 11 of the resonator 4. The Central span of the pipe 14 is separated from and located on opposite sides of her and fixed to the end walls 15 and 16 of the cavity 4 of the two extreme span of the pipe 12, respectively, the first 19 and second 20 RF gaps. The first RF gap 19 is located on the grooms side of the resonator, that is, the last intermediate of the resonator 3 and the second RF gap 20 is located on the side of the collector 5. The longitudinal axis of the first 7 and second 8 rectangular waveguides are parallel to each other and perpendicular to the longitudinal axis of the output duhsasana resonator 4. The first communications window 9 in the side wall 11 posted by side slits Swazi in the conductive partition wall 17 (across the gap), it is located at the same distance from the end walls 15 and 16 of the resonator 4. The second window 10 posted by solid (i.e. not containing cracks communication section 21 of the conductive partition wall 17, while it is located between the conductive partition 17 and located from the reservoir 5 to the second end wall 16 of the cavity 4 opposite the second RF gap 20.

Microwave device shown in figure 1, contains also the notch filter, made in the form of short-circuited at the end of the segment additional rectangular waveguide 22 that is installed near a side wall 11 of the resonator 4 with the outer side of the second waveguide 8 is perpendicular to its wide side, which made the communication gap 23 of these waveguides. Slot connection 23 is perpendicular to the narrow side of the second waveguide 8 and parallel to the wide side of the additional waveguide 22.

Size extra wide side of the rectangular waveguide (a1is chosen equal to the size of the wide side of the first waveguide a1that ensures the receipt of the additional rectangular waveguide microwave energy at a frequency of 2ω (for frequencies ω this waveguide is prohibitive). The additional length of the waveguide L1is chosen equal to half the wavelength in the waveguide at the frequency 2ω, which corresponds to the condition

.

When these conditions are additional segment of the rectangular waveguide 22 is a resonator with resonant frequency 2ω. In this case, in the plane of the cross-section of the second rectangular waveguide 8 (in the field of communication gap 23 of the second rectangular waveguide 8 and the additional rectangular waveguide 22) there is a short circuit at the frequency 2ω, that is, the microwave power is transmitted through a second rectangular waveguide 8 at a frequency of 2ω, is reflected and goes next to the load, and the power at frequency ω passes through this waveguide load.

Shown in figure 2 design of the proposed microwave device klystrons type device to output microwave energy contains installed on the outer side of the output duhsasana resonator 4 of the first 7 and second 8 rectangular waveguides. In the periphery of the conductive partition walls 17 of the output duhsasana resonator 4 is performed (in contrast to the design shown in figure 1), two diametrically spaced symmetrical slits connection 18 adjacent to the side wall 11 of the resonator 4. Slit links 18 are separated from each other by two solid sections 21 of the conductive partition walls 17. The longitudinal axis of the first 7 and second 8 rectangular waveguides are perpendicular to each other and to the longitudinal axis of the output dvuhtysyacheletnego 4. The first 7 and second 8 rectangular waveguides connected to the output duhsasana resonator 4 respectively through the first 9 and second 10 connections window, made in the side wall 11 of the resonator 4. The first window of communication 9 hosted by one of the slits connection 18 in the conductive partition wall 17 (across the gap), the first communications window 9 is located equidistant from the end walls 15 and 16 of the resonator 4. The second window 10 posted by one of two continuous sections 21 of the conductive partition wall 17, while the second connection box 10 is located between the conductive partition 17 and the second end wall 16 of the cavity 4 opposite the second RF gap 20 of the resonator 4. From the wide side of the second rectangular waveguide 8 also has the notch filter in the form of short-circuited at the end of a segment of the additional waveguide 22 associated with the second waveguide 8 through the slot connection 23.

Figure 3 shows the second embodiment of the design of the microwave device with two symmetrically arranged slots connection in the conductive partition output duhsasana resonator. In contrast to the design shown in figure 2, the device for output of microwave energy in addition to the first 7 and second 8 rectangular waveguides further comprises a third rectangular waveguide 24, mounted coaxially to the first rectangular waveguide 7 with p is otivational side output duhsasana resonator 4. The third rectangular waveguide 24 is connected with the output duhsasana cavity 4 through a set of coaxial waveguide 24 third communications window 25 in the side wall 11 of the resonator 4. The third link window 25 is placed between the first 25 and second end walls 16 of the cavity 4 at equal distance from each coaxially arranged first 9 and the third 25 open communication hosted respectively by the first and the second of the two slits connection 18 in the conductive wall 17 of the output duhsasana resonator 4. The size of the wide side and3a third rectangular waveguide 24 is chosen from the same conditions as the size of the wide side of a1the first rectangular waveguide 7.

Figure 4 shows the third embodiment of the design of the microwave device with two symmetrically arranged slots connection in the conductive partition output duhsasana resonator. In contrast to the design shown in figure 2, the device for output of microwave energy in addition to the first 7 and second 8 rectangular waveguides further comprises a fourth rectangular waveguide 26, mounted coaxially to the second rectangular waveguide 8 on the opposite side of the output duhsasana resonator 4. The second rectangular waveguide 8 is connected with the output duhsasana cavity 4 through a set of coaxial waveguide 8 second window 10 in the side wall 11 R is sonatore 4. The second window 10 posted by the first of two continuous sections 21 of the conductive partition walls 17, is located between the conductive partition 17 and the second end wall 16 of the cavity 4 opposite the second RF gap 20 of the resonator 4. Fourth rectangular waveguide 26 is connected with the output duhsasana cavity 4 through located coaxial to waveguide 26 fourth communications window 27 in the side wall of the cavity 4. The fourth connection box 27, hosted by the second of the two continuous sections 21 of the conductive partition walls 17, is also located between the conductive partition 17 and the second end wall 16 of the cavity 4 opposite the second RF gap 20 of the resonator 4. The size of the wide side of a4fourth rectangular waveguide 26 selects the same conditions as the size of the wide side and2the second rectangular waveguide 8.

Microwave device, shown in figure 4, contains a second notch filter, made in the form of short-circuited at the end of a segment of a second rectangular waveguide 28 mounted near the side wall 11 of the resonator 4 with the outer side of the fourth waveguide 26 perpendicular to its wide side, which made the communication gap 29 of these waveguides. Slot connection 29 is perpendicular to the narrow side of the fourth waveguide 26 and parallel to the wide side of the second dopolnitelbnogo 28.

The size of the wide side of a2a second rectangular waveguide 28 selects the same conditions as the size of the wide side of a1the first additional rectangular waveguide 22, is chosen equal to the size of the wide side of the first waveguide a1that ensures the supply of the second additional rectangular waveguide 28 microwave energy at a frequency of 2ω (for frequencies ω this waveguide is prohibitive).

The length of the second waveguide L2is chosen equal to half the wavelength in the waveguide at the frequency 2ω, which corresponds to the condition

.

Possible fourth embodiment of a microwave device with two symmetrically arranged slots connection in the conductive partition wall, in which the output duhsasana the resonator 4 is connected to the first 7, second 8 and 26 fourth rectangular waveguides, but in contrast to the design shown in figure 4, the fourth rectangular waveguide 26 is parallel to the second rectangular waveguide 8 (not shown in the drawing). In this case, the fourth link window 27 is located between the conductive partition wall 17 and the first end wall 15 of the cavity 4 opposite the first RF gap 19 of the resonator 4, and it can be placed from the first or from the second solid teaching the TKA 21 conductive septum 17.

It is also possible fifth embodiment of a microwave device with two symmetrically arranged slots connection in the conductive partition wall, in which the resonator 4 is connected to the first 7, second 8, third 24 and fourth 26 rectangular waveguides, and the first 7, second 8 and third 24 rectangular waveguides are arranged as shown in figure 3, and the fourth rectangular waveguide 26 is placed either in the third embodiment (figure 4), or as in the fourth embodiment, (not shown in the drawing). The use of this design of the microwave device allows the microwave power output from the output duhsasana resonator at frequencies ω and 2ω, to submit to the appropriate four rectangular waveguide, which significantly reduces the load on the device window for the output of microwave energy and provides more reliable operation of the microwave device.

In the General case, the proposed microwave device klystrons type may contain a greater number of output channels. Thus the possible number of output channels of the microwave device (i.e., the number associated with the output duhsasana resonator of rectangular waveguides is determined by the number of slits connection in the conductive partition output duhsasana resonator. If a conductive partition output duhsasana resonator made of N cracks due to such a resonator can be connected to M (where M=1, ...,N) rectangular waveguides, the size of the wide side of each of which must be greater than λ/4 and less than λ/2, and K (where K=1, ..., 2N) rectangular waveguides, the size of the wide side of each of which must be greater than λ/2 and less than λ, and λ=C/ω, where λ is the working wavelength antiphase type oscillation output duhsasana resonator, ω is the operating frequency antiphase type oscillation output duhsasana resonator, C is the speed of light.

The ability to direct a microwave power of two multiples of the frequencies in several output channels without using extra environment devices allows you to extend the use of the microwave device and to extend the functionality of devices containing such a microwave device. For example, the microwave power can be routed to multiple antennas, each of which performs its functions. The use of microwave device with multiple output channels in multiple accelerators can reduce the load on the accelerating section, thereby increasing their penetration strength and increasing the reliability of operation of the accelerator.

The proposed microwave device klystrons type, the design of which is shown in figure 1 or figure 2, works as follows.

The electron flow generated electron gun 1, passing the input resonator 2 microwave device, is modulated by the speed with frequency of the input microwave ω, supplied to the device for introducing microwave energy 6, which results in the grouping of e-flux density. When passing an electron beam through the cavity 3 of a grouper electron bunches is further grouping of the electrons, resulting in the formation of strongly grouped electron bunches with frequency ω. Next, the electronic clots is supplied to the output dvojnasobny resonator 4. In the first RF gap 19 output duhsasana resonator 4 each electron bunch enters the retarding electric microwave field, i.e. in the negative phase of the microwave voltage, antiphase and in-phase oscillations. The selection of the parameters of the output duhsasana resonator 4 configure it antiphase types of oscillations at frequency ω, and phase type oscillations at the frequency 2ω. The distance between the first 19 and second 20 RF output gaps duhsasana resonator 4 is chosen so that each electron bunch in the second RF gap resonator hit the retarding electric microwave field antiphase types of oscillations. For a given setting of the output duhsasana resonator each electron bunch in the second RF gap automatically enters the retarding electric microwave field in-phase species fluctuations. That is they way in the first and second RF output gaps duhsasana resonator electron bunches are always in retarding the phase of the electric microwave field antiphase and in-phase oscillations, which leads to efficient extraction of energy from an electron beam microwave fields antiphase and in-phase oscillations at the same time.

These results are illustrated by the diagrams shown in figure 5, which shows the distribution in the output duhsasana resonator microwave voltages of opposite phase species fluctuations UPRFand UPRFwith frequency ω and phase type oscillations USPand USPwith frequency 2ω, respectively, in the first 19 and second 20 RF gaps depending on time t, and also shows the position of the electron bunch 30. From these time charts shows that in both RF gaps 19, 20 e-clots always fall in retarding the phase of the electric microwave field.

In the reverse configuration, when the anti-phase type oscillation output duhsasana resonator tuned to the frequency of 2ω, and in phase with the appearance of oscillations at frequency ω, each electron bunch 30 enters the retarding electric microwave field phase type oscillation in the first 19 and second 20 RF gaps duhsasana resonator 4, i.e. the electron bunch gives the energy of the microwave field in these RF gaps. For out-of-phase VI who and fluctuations of the output duhsasana resonator electron bunch in the first RF gap resonator enters the retarding electric microwave field, that is also gives the energy of the microwave field of the RF gap. While in the second RF gap electron bunch enters the accelerating electric microwave field, i.e. recovers the energy from the microwave field of the resonator, which reduces the efficiency of the microwave device. These results are explained is shown in Fig.6 time charts of the distribution of the output duhsasana resonator 4 microwave voltages in opposite phase species fluctuations UPRFand UPRFwith frequency 2ω and the in-phase species fluctuations USPand USPwith frequency ω, respectively, in the first 19 and second 20 RF gaps.

Thus (as can be seen from figure 5 and 6), the effective extraction of energy from the electron bunch is only when antiphase type of output fluctuations duhsasana resonator tuned to the frequency ω (the repetition rate of the electron bunches), and common-mode type of oscillations is configured at the frequency 2ω.

From the output duhsasana resonator 4 microwave energy is supplied to the first 7 and second 8 rectangular waveguides of the waveguide device to output microwave energy, and then to the load. In the absence of the design of the microwave device notch filter (not shown in the drawing) in the first waveguide 7 of the microwave device is transmitted microwave energy at a frequency of 2ω, and the second waveguide 8 is transmitted microwave energy at frequencies ω and 2ω. If design is AI microwave instrument notch filter (as shown in figure 1 and figure 2) in the first waveguide 7 of the microwave device is transmitted microwave energy at a frequency of 2ω, and the second waveguide 8 is transmitted microwave energy at a frequency ω.

The proposed microwave device klystrons type, variants of design of which is shown in figure 3 or figure 4, operates in a similar way. Thus from the output duhsasana resonator 4 microwave energy is supplied to the first 7 and second 8 rectangular waveguides, and a third rectangular waveguide 24 (figure 3) or in the fourth rectangular waveguide 26 (4) of the waveguide device to output microwave energy, and then to the load. In the third waveguide 24 is transmitted microwave energy at a frequency of 2ω. In the fourth rectangular waveguide 26 is transmitted microwave energy at frequencies ω and 2ω (in the absence of the design of the microwave device notch filter connected to the fourth rectangular waveguide 26) or on the frequency ω (in the presence of in the design of microwave device notch filter in the form of a second rectangular waveguide 28 connected to the fourth rectangular waveguide 26).

Thus, the proposed microwave device klystrons type allows the fed to its input microwave signal with a frequency ω to obtain at the output of the microwave oscillation on two multiple frequencies ω and 2ω simultaneously, which extends the functionality of the microwave device. Thus the value of microwave power obtained at the output of the microwave device at frequencies ω and 2ω, significantly exceeds the amount of microwave power is STI, the input microwave device that improves the efficiency of the microwave device.

Sources of information:

1. USSR author's certificate No. 1658771, IPC: H01J 25/10, publ. 15.06 1992

2. Lebedev, I.V. Equipment and microwave devices. Volume 2. M.: Higher school, 1972, C-152.

3. U.S. patent No. 4284922, IPC: H01J 25/10, publ. 18.08.1981,

1. Microwave device klystrons type containing electronic gun, resonators with adjacent tubes, the collector, the device for introducing microwave energy waveguide and a device for outputting microwave energy, and executed in the form of a hollow cylinder output dvojnasobny the resonator contains a Central passage tube, coaxially disposed between the fixed to the end walls of the resonator two adjacent tubes and separated from them by a high-frequency gaps, the Central span of the pipe attached to the side wall of the output duhsasana resonator using located between its end walls and parallel to them conductive walls, which made at least one slit communication characterized in that the output dvojnasobny resonator is configured to antiphase appearance of oscillations with frequency ω and phase type oscillations with frequency 2ω, the waveguide device to output microwave energy contains installed on the outer side of the output duhsasana of the first resonator and the second pramool the s waveguides, the longitudinal axes of which are perpendicular to the longitudinal axis of the output duhsasana resonator, the first and second rectangular waveguides connected to the output duhsasana resonator through the first and second communications window in the side wall of the output duhsasana resonator located coaxially with the respective rectangular waveguides, and the first connection box placed side slits connection in the conductive partition output duhsasana cavity and located between the end walls of the output duhsasana resonator equidistant from them, the second communications window posted by solid plot conductive walls and located between the conductive wall and one end wall of the output duhsasana resonator opposite to the corresponding high-frequency gap, the wide side of the first and second rectangular waveguides are parallel to the side walls of the output duhsasana resonator, and the sizes of the wide walls of the first and second rectangular waveguides, a1and a2choose from conditions
λ/4<a1<λ/2,
λ/2<a2<λ,
λ=C/ω,
where a1- the size of the wide side of the first waveguide;
and2- the size of the wide side of the second waveguide;
λ is the working wavelength antiphase type oscillation output duhsasana reason is ora;
ω is the operating frequency antiphase type oscillation output duhsasana resonator;
C is the speed of light.

2. Microwave device klystrons type according to claim 1, characterized in that it introduced the notch filter, made in the form of short-circuited at the end of the segment additional rectangular waveguide located on the outer side of the second rectangular waveguide perpendicular to its wide side, which made the gap of communication these waveguides located perpendicular to the narrow side of the second rectangular waveguide and parallel to the wide side for more of a rectangular waveguide, and the size of the extra wide side of the rectangular waveguide and1and the distance from the outer plane of the wide side of the second rectangular waveguide to the inner plane of the short-circuited end of the additional rectangular waveguide L1choose from conditions
and1=and1,
.

3. Microwave device klystrons type according to claim 1, characterized in that a conductive partition output duhsasana resonator made two slits connection located symmetrically relative to the longitudinal axis of the output duhsasana cavity and separated from each other by a continuous conductive areas of the septum, the first communications window in the side wall o the underwater duhsasana resonator placed by one of the slits connection in the conductive partition output duhsasana resonator, and a second window link posted by one of continuous sections of a conducting partition.

4. Microwave device klystrons type according to claim 1, characterized in that a conductive partition output duhsasana resonator made two slits connection located symmetrically relative to the longitudinal axis of the output duhsasana cavity and separated from each other by a continuous conductive areas of the septum, the waveguide device to output microwave energy further comprises mounted on the outer side of the output duhsasana resonator perpendicular to its longitudinal axis, the third rectangular waveguide associated with the output duhsasana resonator through located coaxially third rectangular waveguide third communications window in the side wall of the output duhsasana resonator, the first communications window in the side wall of the output duhsasana resonator posted by the first communication gap in the conductive partition output duhsasana resonator, a second window link posted by one of continuous sections of a conducting partition, and the third communications window is placed from the second communication gap in the wall and located between the end walls of the output duhsasana resonator equidistant from them, the wide side of the third rectangular waveguide located the modern parallel to the side walls of the output duhsasana resonator, the size of the wide side of the third rectangular waveguide and3choose from conditions
,
λ=C/ω,
where a3- the size of the wide side of the third waveguide;
λ is the working wavelength antiphase type oscillation output duhsasana resonator;
ω is the operating frequency antiphase type oscillation output duhsasana resonator;
C is the speed of light.

5. Microwave device klystrons type according to claim 1, characterized in that a conductive partition output duhsasana resonator made two slits connection located symmetrically relative to the longitudinal axis of the output duhsasana cavity and separated from each other by a continuous conductive areas of the septum, the waveguide device to output microwave energy further comprises mounted on the outer side of the output duhsasana resonator perpendicular to its longitudinal axis, a fourth rectangular waveguide associated with the output duhsasana resonator through located coaxially fourth rectangular waveguide fourth communications window in the side wall of the output duhsasana resonator, the first communications window in the side wall of the output duhsasana resonator posted by one of the gaps of communication in the conductive partition output duhsasana resonator, second, and h is tortue window located between the conductive partition and installed from the grooms side of the first resonator end wall of the output duhsasana resonator opposite the first high-frequency gap or between the conductive partition and installed from a collector of the second end wall of the output duhsasana cavity opposite the second high-frequency gap, while the second window link posted by one of continuous sections of a conducting septum output duhsasana resonator and the fourth window of communications posted by other solid plot conductive septum output duhsasana resonator, the wide side of the fourth rectangular waveguide are parallel to the side walls of the output duhsasana resonator, the size of the wide side of the fourth rectangular waveguide
and4choose from conditions
λ/2<a4<λ,
λ=c/ω,
where a4- the size of the wide side of the fourth waveguide;
λ is the working wavelength antiphase type oscillation output duhsasana resonator;
ω is the operating frequency antiphase type oscillation output duhsasana resonator;
C is the speed of light.

6. Microwave device klystrons type according to claim 1, characterized in that a conductive partition output duhsasana resonator made two slits connection located symmetrically relative to the longitudinal axis of the output duhsasana cavity and separated from each other by a continuous conductive areas of the septum, the waveguide of the device is the STV to output microwave energy further comprises mounted on the outer side of the output duhsasana resonator perpendicular to its longitudinal axis, a fourth rectangular waveguide, associated with the output duhsasana resonator through located coaxially fourth rectangular waveguide fourth communications window in the side wall of the output duhsasana resonator, the first communications window in the side wall of the output duhsasana resonator placed by one of the slits connection in the conductive partition output duhsasana resonator, the second communications window is located between the conductive partition and installed from the grooms side of the first resonator end wall of the output duhsasana resonator opposite the first high-frequency gap, the fourth connection box is located between the conductive partition and installed from a collector of the second end wall of the output duhsasana cavity opposite the second high-frequency gap, while the second and fourth connections window posted by one of continuous sections of a conducting septum output duhsasana resonator or the second window link posted by one of continuous sections of a conducting septum, and the fourth window link posted by another solid plot conductive septum output duhsasana resonator, the wide side of the fourth rectangular waveguide are parallel to the side walls of the output duhsasana resonator,the size of the wide side of the fourth rectangular waveguide and 4choose from conditions
λ/2<a4<λ,
λ=c/ω,
where a4- the size of the wide side of the fourth waveguide;
λ is the working wavelength antiphase type oscillation output duhsasana resonator;
ω is the operating frequency antiphase type oscillation output duhsasana resonator;
C is the speed of light.

7. Microwave device klystrons type according to claim 5 or 6, characterized in that it introduced a second notch filter, made in the form of short-circuited at the end of a segment of a second rectangular waveguide located on the outer side of the fourth rectangular waveguide perpendicular to its wide side, which made the gap of communication these waveguides located perpendicular to the narrow side of the fourth rectangular waveguide and parallel to the wide side of a second rectangular waveguide, and the size of the wide side of a second rectangular waveguide and2and the distance from the outer plane of the wide side of the fourth rectangular waveguide to the inner plane of the short-circuited end of a second rectangular waveguide L2choose from conditions
a2=and1,
.



 

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FIELD: electronic equipment.

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EFFECT: technical result - increase durability, power output and efficiency.

5 cl, 1 dwg, 1 tbl

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