Microwave device of o-type

FIELD: electricity.

SUBSTANCE: invention is related to electronic microwave equipment, namely to powerful wide band microwave devices of O-type, for instance, to multiple-beam klystrons that mostly operate in medium and short-wave part of centimeter range of waves length. Microwave device of O-type consists of sequentially installed along its axis electron gun, active resonators in the form of wave conductors segment and collector. Active resonators are made as stepwise changing in height, where height is the distance along microwave device axis between end walls of active resonator. In active resonator floating-drift tubes are installed linearly in rows and are fixed in its opposite end walls, and ends of coaxially installed floating-drift tubes are separated by permanent high-frequency gap. Central rows of floating-drift tubes are installed in sections of active resonators with the least height, and subsequent rows of floating-drift tubes that are installed along both sides of central rows, are installed in sections of active resonators with higher heights. It is also suggested to use inlet and outlet active resonator with non-symmetric installation of floating-drift tubes relative to opposite side walls of these resonators. Inlet active resonator may be connected to energy input directly through inlet wave conductor or through inlet passive resonator and inlet wave conductor. Outlet active resonator may be connected with energy output directly through outlet wave conductor or through one or several outlet passive resonators and outlet wave conductor.

EFFECT: increase of efficiency factor at the account of improvement of electric field distribution uniformity in the sphere of electronic flow interaction with microwave field.

12 cl, 5 dwg

 

The invention relates to electronic microwave equipment, namely a powerful broadband microwave devices Of the type such as the multibeam klystrons (MLK), working mainly in the medium and short-wave part of the centimeter wavelength range.

The important direction of development amplifying klystrons is the efficiency of the band of operating frequencies while maintaining the complex operating characteristics of the device, such as a low supply voltage, low mass and dimensions and other

Known for powerful multi-beam klystrons with resonators on core oscillations [1]. In such klystrons electron beams pass through a separate passage channels in the total span of the pipe in the toroidal resonator. Nicobariensis low current of the electron beams easier to focus grouped and efficiently transmit the energy to the high-frequency field. Power output is formed by summing the capacities given field many low-rays. The result can significantly reduce the operating voltage and in some cases to reduce the dimensions and weight of the klystron and its power sources. In addition, with the increase in total perveance can be significantly increased bandwidth gain such a klystron.

However, when creating klystrons with average power is m ore than 10 kW medium-wave and short-wave part of the centimeter wavelength range using multi-beam design with resonators on core oscillations encounters difficulties, associated with the need to resolve conflicting objectives. To ensure broad band amplification it is necessary to reduce the distance between adjacent channels, and for providing a great level of power, good calarasanu, low current density from the cathode and electrodiagnostic need to increase the number of rays and the distance between them.

When using traditional cavity toroidal type maximum diameter of passage pipe is about half of the working wavelength. When this passage channels for the partial electron beams are arranged in rows on one or more circles. The large diameter passage pipe leads to a change in the amplitude of the electric field along the radius. This leads to reduced efficiency of the interaction between an electron beam with a microwave field of the resonator, to the heterogeneity of the modulation of the electron beams in the outer and inner rows span channels, and, consequently, a decrease in efficiency.

One of the ways to create a powerful broadband klystrons is used as the active resonators so-called linear resonators, representing a segment of the waveguide, which span the channels are arranged linearly in one or more series, which provides better heat removal from the span channels.

Known Klis the Ron for UHF and low-frequency part of the centimeter range, resonators which are dvuhkosournymi and made in the form of segments of a coaxial waveguide with two rows span channels [2]. The length of each row is approximately equal to a quarter wavelength in the waveguide forming the cavities of the klystron, which improves the uniformity of electric field intensity in the interaction region of the electron flow from the microwave field of the resonator (in the microwave gaps) and increases the efficiency of the klystron. However, when such a klystron in the medium and short-wave part of the centimeter wavelength range to provide high average power output (above 10 kW) in a wide band of frequencies (of the order of a few percent), it is necessary to increase the length of the rows span channels, which reduces the uniformity of the electric field strength and reduce the efficiency of the klystron. With the increase in frequency decreases the optimal distance between the centers of the microwave gaps duhsasana coaxial resonators, and therefore, decreases the width of the Central conductors of these resonators, which worsens the conditions of heat from the conductors and limits the power of the klystron. In addition, when used in the design of the klystron duhsasana resonators, with increasing length of the rows span the channels decreases the separation between the working and non-working parasitic oscillations that result is the possibility of excitation of the klystron these parasitic species fluctuations and deterioration of its output parameters. The consolidation of the Central conductors of the coaxial resonators in thin rods reduces heat and increases the possibility of thermal deformation of the Central conductors leading to the distortion of the microwave field in the interaction region of the electron ow, reduce tokophobia and deterioration of the output parameters of the klystron. The design is complicated and time-consuming to manufacture.

The closest technical solution (prototype) is the design of the klystron with ribbon beam containing a linear resonator, the working of which is made in the form of open cut H-shaped waveguide, limited ends with the end regions, made in the form of segments of the waveguide, the critical wavelength which is less than a critical wavelength of the waveguide, forming a working portion of the cavity [3]. This condition can be ensured by choosing a larger cross-section of the waveguides forming the terminal area slightly less than half the length of the working wave.

In this design a linear resonator, the electric field has the highest value in its Central part and decreases in a direction to open the ends of the H-shaped waveguide. The introduction of end areas in the form of exorbitant waveguides enhances the value of the electric field mainly near his summe is zi open ends of the H-shaped waveguide and thereby to improve the uniformity of the electric field strength near these sites. This design is most efficient at small length of the interaction region of the electron flow from the microwave field of the resonator (i.e. at small distances between the open ends of the H-shaped waveguide). However, when a large output power, when you want to receive more extended electronic flows, end region does not significantly improve the uniformity of electric field intensity along the length of the interaction region such electronic flow with the microwave field of the resonator.

In addition, the presence in the design of the klystron end regions having a substantial length in the direction of the electron flow, it is not possible to place the adjacent resonators near each other, which is a necessary condition for the operation of the klystron in the short wavelength range of wavelengths. Besides, the presence of end regions strongly complicates the design of a linear resonator and leads to additional difficulties in the manufacture of the klystron. When used in the klystron inductive configuration with the side wall is uneven field change along the length of the interaction region of the electron flow from the microwave field of the resonator, since the end of the field limit the movement of this side wall near the edges of the electron flow. In addition, to the Istron with belt electron flux cannot be used pickup system with constant magnetic field, as it is the twisting of the electron flow. It is necessary to apply more sophisticated focusing system.

The objective of the invention is to provide a device Of the type (for example, klystron) with increased output power (average and pulse) and with high efficiency in a wide frequency band, working mainly in the medium and short-wave part of the centimeter wavelength range.

Technical result achieved in the invention, this increase in efficiency by improving the uniformity of electric field distribution in the interaction region of the electron flow from the microwave field active resonators for microwave device.

Offers a microwave device Of the type containing sequentially along its axis electron gun, an active resonators in the form of segments of waveguides and collector, active resonators made gradually changing height, where height is the distance along the axis of the microwave device between the end walls of the active resonator, in which the fixed span of the tube, placed linearly parallel rows, at least two opposite side walls of the active resonator located parallel to the axis of the microwave device, and a Central series of the drift tubes are located in areas of active resonators with the lowest height, and accommodated is on both sides from the Central rows, then the rows of the drift tubes are located in areas of active resonators with large heights, for all the drift tubes of each resonator, the value of high-frequency gap formed by the ends of the coaxially located passage tubes, mounted in the opposite end walls of the active resonator is a constant value.

In the proposed microwave unit length of the resonator is larger than the width of the resonator, where the length of the resonator is the distance between the two first opposite side walls of the active resonator, and the width is the distance between the two second opposite side walls, perpendicular to the first two lateral walls.

In the proposed microwave instrument height of the active resonators speed is changed in the direction to the two first lateral walls and/or in the direction of the two second side walls of the active resonator.

In the proposed microwave instrument height of the active resonators speed increases toward the first two lateral walls of the active resonator.

In the proposed microwave device in active resonators containing twelve of the drift tubes arranged in six rows of two tubes, two Central rows are located on the active area of the resonator height h, two adjacent rows of tubes are located on the active area of the resonator height, selected from the condition (1.1÷1.25)h, and the two extreme number of tubes located at the active area of the resonator height, selected from the condition (1.5÷1.7)h, and the length of the resonator 2.5÷3.5 times greater than the width of the resonator, and the distance between the outermost rows of the drift tubes more than 0.7λwhere λ is the wavelength corresponding to the center frequency of the operating band of the device.

In the proposed microwave device in active resonators containing thirty-span of tubes arranged in ten rows of three tubes, two of the Central row of tubes are located on the active area of the resonator height h, four adjacent row of tubes are located on the active area of the resonator height, selected from the condition (1.1÷1.25)h, and four extreme number of pipes arranged on the active area of the resonator height, selected from the condition (1.5÷1.8)h, and the length of the resonator 2.5÷3.5 times greater than the width of the resonator, and the distance between the outermost rows of the drift tubes more than 0.7λwhere λ is the wavelength corresponding to the center frequency of the operating band of the device.

In the proposed microwave device input active electromagnetic resonator is connected either to the input waveguide through at least one slit communication made in one of the side walls of the input of the active resonator, or with a passive cavity through at least one slit communication made in one of the side walls of the input of the active resonator. At least this is the distance from the side wall of the input of the active resonator with a gap due to the surface of the drift tubes 1.1÷ 2.5 times smaller than the smallest distance from the opposite side of the input of the active resonator to the surface of the drift tubes.

In the proposed microwave device output active electromagnetic resonator is connected either to the output waveguide through at least one slit communication made in one of the side walls of the output of the active resonator, or with a passive cavity through at least one slit communication made in one of the side walls of the output of the active resonator. The least distance from the side wall of the output of the active resonator with a gap due to the surface of the drift tubes 1.1÷2.5 times smaller than the smallest distance from the opposite side of the output of the active resonator to the surface of the drift tubes.

The proposed geometry of the active resonators for microwave device allows to achieve a more uniform electric field distribution along the length of the interaction region of the electron flow from the microwave field and, therefore, to increase the efficiency.

In the present invention is used multibeam design of the microwave device, in which are formed several nizkoprobnyh partial electron beams arranged in a linear series, which allows you to create in the microwave instrument longest high-current electron flow of electrons, is ensuring a level of power output.

Partial electron beams electron beam interact with the microwave field linear active resonator of the microwave device in the high frequency gaps between the ends of the coaxially located the drift tubes. These frequency gaps combine to form a region of interaction between an electron beam with a microwave field of the active resonator. The alignment of the electric field in such a resonator, and, consequently, increase the efficiency of the microwave device is provided by a step change of the height of the cavity (along the axis of the microwave device). In this case, does not require the use of additional edge regions, which simplifies the design of the microwave device and allows you to bring together neighboring active resonators, ensuring effective work in the short wavelength range. Thus, in comparison with the prototype, improves the uniformity of distribution of the electric field across the interaction region of the electron flow from the microwave field of the active resonator.

Execution of passage channels in the form of the drift tubes provides ease of fabrication, resistance to deformation, and pinning them to the walls of the active resonator improves the heat sink. This allows you to get resistant to thermal and mechanical loads in the design of the microwave device.

The formation of extended electronic is Otok in the form of spaced rows of partial electron beams instead of one band of the electron beam allows you to apply to focus more simple focusing system with a constant magnetic field.

Estimates showed that in the linear active cavity to align the electric field it is necessary that one or a few Central rows of the drift tubes were located on the site with a minimum height of the cavity, and subsequent rows of the drift tubes were located in areas with greater height of the resonator, where the height is the size of the resonator, directed along the axis of the microwave device, i.e. along the electron beam. By calculation, it was determined the distribution of the heights of the cavity for several variants of active resonators. For example, the resonators containing twelve of the drift tubes arranged in six rows of two tubes, two Central row of tubes are located on the plot with the minimum height of the cavity h, the two nearest row of tubes is located on the heights of 1.1-1.25 times larger minimum height, and the two extreme number of tubes are located at altitudes of 1.5-1.7 times larger minimum height, with the length of the resonator 2.5-3.5 times greater than the width of the resonator. Resonator containing thirty-span of tubes arranged in ten rows of three tubes, two of the Central row of tubes are located on site with a minimum height of cavity h, the four nearest row of tubes is located on the heights of 1.1-1.25 times larger minimum height, and the four outermost rows of tubes are located at altitudes in 15-1 .8 times larger minimum height, if the length of the resonator 2.5-3.5 times greater than the width of the resonator.

Input active resonator may be a solenoid connected to the input waveguide directly or to increase gain) through the passive input resonator. The input waveguide is connected to the input energy of the microwave device.

The output of the active resonator may be a solenoid connected with the output waveguide directly or (for greater operating band of the device through one or more passive output resonators. An output waveguide connected to the output energy of the microwave device.

An asymmetrical arrangement of rows span of the tubes relative to the opposite walls of the input and/or output active resonator leads to the reduction of non-uniformity of the electric field in the interaction region of the electron flow from the microwave field active resonators, applied external load active resonators (input and/or output waveguides or input and/or output passive resonators), which allows to increase efficiency of the device.

The invention is illustrated by drawings.

1 schematically depicts a multibeam mnohorozmerny the klystron.

On figa and 2B shows two options for performing intermediate active cavity klystron shown in figure 1.

On figa and 3b shows two the " run input is active resonator with asymmetrical location of the drift tubes relative to its opposite side walls (figa - input active resonator with an input waveguide, PIGB - input active resonator with input passive resonator and the input waveguide) the klystron shown in figure 1.

Figure 4 shows one possible implementation of the output of the active resonator with an output of the passive resonator and the output waveguide for the klystron shown in figure 1.

Figure 5 shows the calculated dependence of the distribution of the relative magnitude of a wave resistance ρmax/ρ the length of the interaction region of the electron flow from the microwave field to the invention and of a prototype; the solid line corresponds to the relationship ρmax/ρ for the variant of the invention with twelve electron beams arranged in six rows (where N is the ordinal of the number along the interaction region of the electron flow from the microwave field), the dashed line corresponds to the relationship ρmax/ρ for the design of the prototype, the interface which is the same length as that of the considered variant of the invention. As the voltage of the electric field is proportional to the wave resistance, dependence ρmax/ρ it is possible to judge the uniformity of the stress distribution of the electric field along the length of the interaction region e on the eye with the microwave field.

Multibeam mnohorozmerny the klystron, schematically depicted in figure 1, contains an electronic gun 1, header 2, the energy input 3, output power 4 and electrodynamic system 5 that includes the input of the active resonator 6, the intermediate active resonators 7 and the output of the active resonator 8, each of which contains the span of the tube 9.

In the pictured figa intermediate active resonator 7 dvenadcatiletnego of klystron span of the tubes 9 are arranged in six rows of two tubes. Passage of the tube 9, is fixed (e.g., by soldering) to the opposite end walls 10, 11 of the active resonator 7, the ends are coaxially located passage of the tubes 9 are separated from each other with the same value of d high-frequency gap 12, which together form a region of interaction between an electron beam with a microwave field 13. The height of the resonator (the distance between the end walls 10, 11) speed increases in the direction from the Central part of the resonator to two opposite lateral walls 14, 15, with two Central rows of the drift tubes 9 are located in areas of active resonator 7 with the smallest height h, and subsequent layers are located in areas with large heights. The distance between side walls 14 and 15 and arranged perpendicular distance between them in two other the side walls 16, 17 resonator 7 remain unchanged in value.

In the pictured figb intermediate active resonator 7 thirty-beam klystron span of the tubes 9 are arranged in ten rows of three tubes. The height of the resonator speed increases in the direction from the Central part of the resonator to two opposite lateral walls 14, 15, with two Central rows of the drift tubes 9 are located in areas of active resonator 7 with the smallest height h, a subsequent layers are located in areas with large heights. The distance between side walls 14 and 15 and arranged perpendicular distance between them, the other two side walls 16, 17 of the resonator 7 remain unchanged in value.

In the pictured figa input active resonator 6 dvenadcatiletnego of klystron span of the tubes 9 are arranged in six rows of two tubes. Input active resonator 6, the electromagnetic-associated with the input waveguide 18 through the slot connection 19 in the side wall 15 of the input resonator 6, which is the common wall of the resonator and the input waveguide 18.

In the pictured figb input active resonator 6 dvenadcatiletnego of klystron span of the tubes 9 are arranged in six rows of two tubes. Input active resonator 6, the electromagnetic connected to the input of the passive resonator 20 through two SEL the connection 21 in the side wall 16 of the cavity 6, which is a common wall for the resonators 6 and 20. Input passive electromagnetic resonator is connected to the input waveguide 18 through the slot connection 22 in their common wall 23.

For improving the uniformity of electric field distribution in the interaction region of the electron flow from the microwave field from the input of the active resonator 6 serves to position the span of the tube 9 is closer to the side wall 15 with a gap of communication 19 (figa) or to the side wall 16 with slots communication 21 (figb) so that the distance L1 or L11these side walls 15 (figa) or 16 (figb) with cracks due to the drift tubes 9 was smaller than the distance L2 or L21from the corresponding opposite side walls 14 or 17 input active resonator 6 to passage of the tubes 9. It is experimentally shown that the introduction of the mentioned asymmetry, in which the smallest distance L1 (figa) or L11(figb) from the wall to the input of the active resonator with a gap due to the drift tubes 1.2-2.5 times smaller than the smallest distance L2 (figa) or L21(figb) from the opposite wall of the entrance of the active resonator to the drift tubes, reduces the differential wave resistance (ρmaxminin the field of interaction between an electron beam with a microwave field with 1.5-1.7 times (with the symmetric location of the drift tubes for across the lagoon to the false side walls of the cavity) to 1.2 times.

Shown in figure 4 the output of the active resonator 8 dvenadcatiletnego of klystron span of the tubes 9 are arranged in six rows of two tubes. The output of the active resonator 8, electromagnetic associated with the output of the passive cavity 24 through two slits connection 25 in the side wall 16 of the cavity 8, which is a common wall for the resonators 8 and 24. The output of the passive resonator 24 electromagnetic associated with the output waveguide 27 through the slot connection 28 in their common wall 29.

For the uniform distribution of the electric field in the interaction region of the electron flow from the microwave field in the output of the active resonator 8 serves to position the span of the tube 9 is closer to the cracks connection 25 so that the distance from the side wall 16 with slits connection 25 to the drift tubes 9 was less than the distance from the opposite side wall 17 of the output of the active resonator 8 to passage of the tubes 9. The introduction of the mentioned asymmetry, in which the smallest distance L111from the wall 16 of the cavity 8 to the drift tubes 9 1.2-2.5 times smaller than the smallest distance L211from the opposite wall 17 of the cavity 8 to the span of the tubes 9, reduces the differential wave resistance (ρmaxminin the field of interaction between an electron beam with a microwave field with a 2.3 times (with the symmetric location of the pipeline span is relatively opposite walls of the cavity) to 1.7 times when L2 11/L111=1.5 and up 1,95 times when L211/L111=1,25. It should be noted that the choice of a particular value of the ratio of the distances L211/L111is determined by the magnitude of the external load, making the unevenness in the distribution of the electric field in the interaction region of the electron flow from the microwave field and the selected design of the resonator.

Depicted in figure 5 the dependence of the distribution of the relative magnitude of a wave resistance ρmax/ρ the length of the interaction region of the electron flow from the microwave field to the invention and of the prototype shows that the proposed geometry of the active resonator allows to achieve a more uniform electric field distribution along the length of the interaction region of the electron flow with the microwave field. The calculations showed that in the resonators of the proposed microwave-device variation of the impedances (ρmaxmin) along the length of the interaction region was 14.6%, and in the prototype, with the same maximum height of the resonator, the variation of the impedances is 32.5%.

The klystron, the design and construction of resonators which is shown in figure 1-4, works as follows. The input microwave power is supplied to the input energy 3 klystron and excites in the input active resonator 6 microwave oscillations. While microwave energy is supplied on the input power 3 to the resonator 6 either directly through the input waveguide 18 (figa), either connected in series through the input waveguide 18 and the input of the passive resonator 20 (figb). The generated electron gun 1 e-rays in the input active resonator 6, interacting with microwave energy, modulated by velocity. Accelerated electrons in the floating tubes 9 are catching up slower. In the intermediate active resonators 7 e-rays induce the microwave field, which in turn additionally modulates the electron beams. As a result, electron beams occurs grouping of electrons in bunches. The extraction of energy from the electron beams is performed in the output of the active cavity 8 by inhibition of electron bunches in a high frequency field of the resonator. Enhanced microwave power from the output of the active resonator 8 is output from the klystron through the output energy 4. While microwave energy is delivered from the resonator 8 to the output power of 4, or through the first output of the passive resonator 24 and the output waveguide 27 (figure 4), or through multiple (two or more series-connected output passive resonators and the output waveguide 27, or (when a small band of operating frequencies) directly via the output waveguide 27.

The proposed design is tested in experimental powerful broadband klystron, containing nine active resonators having a twelve is cate span of the tubes, located under figa. The klystron operates in the medium part of the centimeter range with an average output power of 11 kW, the bandwidth of 350 MHz, a gain of 40 dB and an efficiency of about 25%.

The proposed design can be widely used to create powerful broadband devices Of the type (for example, klystrons) for use in electronic equipment.

Sources of information

1. Pagnin VI Evaluation of the ultimate capacity of the multibeam klystrons with resonators on core oscillations for modern radar. - Radio engineering, 2000, No. 2, p.43-50.

2. RF patent № 2125319, MKI H01J 25/10, publ. 20.01.1999. Multibeam klystron.

3. USSR author's certificate No. 194975, MKI H01J 25/10, publ. 12.04.1967. The klystron with the ribbon beam.

1. The microwave device Of the type containing sequentially along its axis electron gun, an active resonators in the form of segments of waveguides and a collector, wherein the active resonators made gradually changing height, where height is the distance along the axis of the microwave device between the end walls of the active resonator, in which the fixed span of the tube, placed linearly series, parallel, at least two opposite side walls of the active resonator located parallel to the axis of the microwave device, and penny the social ranks of the drift tubes are located in areas of active resonators with the lowest elevation, and placed on either side of the Central rows, then the rows of the drift tubes are located in areas of active resonators with large heights, with all the span of the tubes of each resonator, the value of high-frequency gap formed by the ends of the coaxially located passage tubes, mounted in the opposite end walls of the active resonator is a constant value.

2. The microwave device Of the type according to claim 1, characterized in that the length of the resonator is larger than the width of the resonator, where the length of the resonator is the distance between the two first opposite side walls of the active resonator, and the width is the distance between the two second opposite side walls, perpendicular to the first two lateral walls.

3. The microwave device Of the type according to claim 2, characterized in that the height of the active resonators speed is changed in the direction to the two first lateral walls and/or in the direction of the two second side walls of the active resonator.

4. The microwave device Of the type according to claim 2, characterized in that the height of the active resonators speed increases toward the first two lateral walls of the active resonator.

5. The microwave device Of the type according to claim 4, characterized in that the resonators containing twelve of the drift tubes arranged in six rows of two tubes, two Central the poison is located on the active area of the resonator height h, two adjacent rows of tubes are located on the active area of the resonator height, selected from the condition (1.1÷1.25)h, and the two extreme number of pipes arranged on the active area of the resonator height, selected from the condition (1.5÷1.7)h, and the length of the resonator 2.5÷3.5 times greater than the width of the resonator, and the distance between the outermost rows of the drift tubes more than 0.7λwhere λ is the wavelength corresponding to the center frequency of the operating band of the device.

6. The microwave device Of the type according to claim 4, characterized in that the resonators containing thirty-span of tubes arranged in ten rows of three tubes, two of the Central row of tubes are located on the active area of the resonator height h, four adjacent row of tubes are located on the active area of the resonator height, selected from the condition (1.1÷1.25)h, a four extreme number of pipes arranged on the active area of the resonator height, selected from the condition (1.5÷1.8)h, and the length of the resonator in 2,5÷3.5 times greater than the width of the resonator, and the distance between the outermost rows of the drift tubes more than 0.7λwhere λ is the wavelength corresponding to the center frequency of the operating band of the device.

7. The microwave device Of the type according to claim 1, characterized in that the input active electromagnetic resonator is connected to the input waveguide through at least one slit communication is accomplished in one of the side walls of the input of the active resonator.

8. The microwave device Of the type according to claim 1, characterized in that the input active electromagnetic resonator is associated with a passive cavity through at least one slit communication made in one of the side walls of the input of the active resonator.

9. The microwave device Of the type according to claim 7 or 8, characterized in that the minimum distance from the side wall of the input of the active resonator with a gap due to the surface of the drift tubes 1.1-2.5 times smaller than the smallest distance from the opposite side of the input of the active resonator to the surface of the drift tubes.

10. The microwave device Of the type according to claim 1, characterized in that the output active electromagnetic resonator is connected with the output waveguide through at least one slit communication made in one of the side walls of the output of the active resonator.

11. The microwave device Of the type according to claim 1, characterized in that the output active electromagnetic resonator is associated with a passive cavity through at least one slit communication made in one of the side walls of the output of the active resonator.

12. The microwave device Of the type according to claim 10 or 11, characterized in that the minimum distance from the side wall of the output of the active resonator with a gap due to the surface of the drift tubes 1.1-2.5 times smaller than the smallest distance from the opposite side of the output active is esonator to the surface of the drift tubes.



 

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The invention relates to the field of microwave engineering of millimeter and submillimeter wavelengths, namely resonant systems microwave ranges, and is intended primarily for use in the generator-amplifier devices that use quasi-resonant system

FIELD: microwave engineering; high-power broadband multibeam devices such as klystrons.

SUBSTANCE: proposed O-type device has two multibeam floating-drift tubes in each active resonator with operating wave mode H201, diameter D of each tube being chosen from condition D = (0.4 0.45)λ, where λ is wavelength corresponding to center frequency of device operating band. Input and output active resonators with floating-drift tubes asymmetrically disposed relative to opposite walls of these resonators are proposed for use. Input active resonator can be connected to energy input directly or through input waveguide, or through input passive resonator and input waveguide. Output active resonator can be connected to energy output through one output passive resonator and output waveguide or through two output passive resonators and input waveguide. Two multibeam floating-drift tubes are disposed in each active resonator including intermediate ones.

EFFECT: enhanced output power, efficiency, and practical feasibility, simplified design, facilitated manufacture, assembly, and adjustment of device.

11 cl, 4 dwg

FIELD: electricity.

SUBSTANCE: invention is related to electronic microwave equipment, namely to powerful wide band microwave devices of O-type, for instance, to multiple-beam klystrons that mostly operate in medium and short-wave part of centimeter range of waves length. Microwave device of O-type consists of sequentially installed along its axis electron gun, active resonators in the form of wave conductors segment and collector. Active resonators are made as stepwise changing in height, where height is the distance along microwave device axis between end walls of active resonator. In active resonator floating-drift tubes are installed linearly in rows and are fixed in its opposite end walls, and ends of coaxially installed floating-drift tubes are separated by permanent high-frequency gap. Central rows of floating-drift tubes are installed in sections of active resonators with the least height, and subsequent rows of floating-drift tubes that are installed along both sides of central rows, are installed in sections of active resonators with higher heights. It is also suggested to use inlet and outlet active resonator with non-symmetric installation of floating-drift tubes relative to opposite side walls of these resonators. Inlet active resonator may be connected to energy input directly through inlet wave conductor or through inlet passive resonator and inlet wave conductor. Outlet active resonator may be connected with energy output directly through outlet wave conductor or through one or several outlet passive resonators and outlet wave conductor.

EFFECT: increase of efficiency factor at the account of improvement of electric field distribution uniformity in the sphere of electronic flow interaction with microwave field.

12 cl, 5 dwg

FIELD: electrics.

SUBSTANCE: invention concerns electric vacuum ultra high frequency (UHF) instruments, particularly construction of O-type traveling wave lamp with magnetic periodic focusing system (MPFS). Lamp includes MPFS combined with resonance slow-down system and consisting of intermittent axially magnetised ring magnets, polar headpieces with ferromagnetic hubs and non-magnetic diaphragms with capacitance bushings, positioned between them and forming transit channel. At least a part of MPFS behind high frequency power input includes ferromagnetic insert forming slow-down system resonators together with adjoining polar heads. Another resonator part is formed by diaphragm in the form of step rotation body, and annular element fixating the insert in diaphragm. Diaphragms and annular elements are made of non-magnetic material with high heat conductivity. Selection of ferromagnetic insert profile, size and position between polar heads defines magnetic field with given high harmonic components and non-sinusoid distribution.

EFFECT: enhanced current permission of beam in high-performance traveling wave lamp in short-wave part of UHF range due to intense electron stream focusing in transit channel of traveling wave lamp with low pulsation.

3 cl, 8 dwg

FIELD: electrics.

SUBSTANCE: invention concerns electric vacuum ultra high frequency devices, particularly in O-type traveling wave lamp with magnetic periodic focusing system (MPFS). Lamp includes MPFS combined with resonance slow-down system and consisting of intermittent axially magnetised ring magnets, polar headpieces and ferromagnetic inserts. To achieve required harmonic component level in magnetic field with non-sinusoid distribution, at least a part of MPFS behind high frequency power input consists of adjoining cells, each including at least one unidirectional magnetisation magnet and three ferromagnetic inserts between polar headpieces. Magnets in each two neighbour cells have opposite magnetisation. Inserts are positioned with gaps against polar headpieces in hubs in the form of step rotation bodies and fixated by annular elements, and form inner cavities of high frequency resonators in slow-down system. Hubs and annular elements are made of non-magnetic material with high heat conductivity and comprise vacuum shell together with polar headpieces.

EFFECT: enhanced current permission of beam in high-performance traveling wave lamp in short-wave part of UHF range due to intense electron stream focusing in transit channel.

3 cl, 9 dwg

FIELD: microwave engineering; high-power broadband multibeam devices such as klystrons.

SUBSTANCE: proposed O-type device has two multibeam floating-drift tubes in each active resonator with operating wave mode H201, diameter D of each tube being chosen from condition D = (0.4 0.45)λ, where λ is wavelength corresponding to center frequency of device operating band. Input and output active resonators with floating-drift tubes asymmetrically disposed relative to opposite walls of these resonators are proposed for use. Input active resonator can be connected to energy input directly or through input waveguide, or through input passive resonator and input waveguide. Output active resonator can be connected to energy output through one output passive resonator and output waveguide or through two output passive resonators and input waveguide. Two multibeam floating-drift tubes are disposed in each active resonator including intermediate ones.

EFFECT: enhanced output power, efficiency, and practical feasibility, simplified design, facilitated manufacture, assembly, and adjustment of device.

11 cl, 4 dwg

FIELD: multirange microwave devices for radar stations.

SUBSTANCE: proposed multirange O-type device used for radar stations to replace separate devices for each range thereby simplifying station design and reducing its cost is assembled of electrodynamic systems disposed along electron beam and isolated from each other by conducting disks with drift tubes. Each electrodynamic system is provided with energy input and output. Operating-range wavelength of electrodynamic system rises in direction of electron beam motion and ratio of electrodynamic system diameter to this wave reduces in same direction. Transit-time channel diameter remains constant or increases from system to system in direction of electron beam motion.

EFFECT: enhanced self-excitation resistance, reduced probability of current lowering, minimized size and mass.

1 cl, 1 dwg

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