Method for producing printhead interconnection structure incorporating thin-film resistor

FIELD: ink-jet printers and their printheads having small holes for programmable ejection of ink droplets.

SUBSTANCE: proposed method for producing printhead thin-film interconnection structure includes deposition of resistor layer and conductor layer onto insulated substrate, formation of patterns of layers deposited onto insulated structure to form resistive heating element, formation of insulating barrier layer onto pattern of mentioned conductor layer, formation of window in mentioned barrier layer, production of metal layer contacting mentioned conductor layer pattern through mentioned window whose geometry opens up predetermined area of mentioned conductor layer pattern, and metal layer pads on insulating barrier layer above heating layer; prior to arrangement of conductors from metal layer, insulating barrier layer is treated with etching solution for cleaning and recovering surface insulating barrier layer, and along with wiring of metal layer from mentioned conductor layer pattern through mentioned window in insulating barrier layer on adjacent area of mentioned insulated substrate metal layer wiring section is made in the form of pad on insulating barrier layer above heating element used as stabilizing evaporation surface. In this way insulating barrier layer is cleaned and its properties are recovered, metal layer wiring adhesion to insulating barrier layer, and especially adhesion of metal layer pad to insulating barrier layer above heating element, is enhanced.

EFFECT: enhanced quality and reliability of printhead.

3 cl, 11 dwg

 

The invention relates to the production of inkjet printers, namely printheads for inkjet printers with small holes in the head, through which program are ejected ink droplets.

The ejection of ink droplets through the apertures (nozzles) occurs due to the heating and evaporation of the ink in a special chamber which receives the ink due to heat from the thin-film resistor when current flows.

The first reports about the device and methods of manufacturing the thin-film resistor structures Hewlett-Packard appeared in 80 years of the last century [1, 2].

See [2] the method of manufacturing the heating element for a printer head in the form of a thin-film resistor structure includes the creation of an isolated substrate, forming on it a layer of resistive material to create a heating element, the deposition of the layer of conductive adhesive material, a layer of a material with high conductivity and the upper metal layer for the fabrication of conductive electrodes.

The principal disadvantage of this method was the lack of an insulating protective layer on the resistor, the surface of which there are processes of heating and evaporation of ink that can affect the stability of the heat resistor, determine the quality and a reliable printer.

This disadvantage is eliminated in subsequent modifications of the printer heads Hewlett-Packard [3, 4].

Closest to the proposed invention is [5] the manufacturing Process of thermal ink printer heads, and the structure of the integrated device manufactured thereby"used in modern versions of the company, which claims a method of manufacturing a thin-film resistor structure of the printer head and printer head with thin-film resistor and the structure of the interconnections used in this method.

In [5] is protected: 1. A method of manufacturing a thin-film resistor structure of the printer head, comprising forming on an isolated substrate resistive layer and the layer of the conductor, based on a drawing, the opening area in the conductor layer over the resistive layer, forming a resistive heating element in the resistive layer, forming an insulating barrier layer on top of the figure mentioned conductor layer, forming a window in said insulating barrier layer, creating a metal layer being in electrical contact with the said picture layer of the conductor through the said window having a geometry that opens a pre-defined area of the above figure, the layer of the conductor, running the wiring from the metal layer of said ri is unka conductor layer through the said window adjacent land referred to isolated substrate, so the layout of the metal layer on the aforementioned grounds mentioned insulating substrate forms a relatively large and flat area, remote from the mentioned figure of the layer of conductor to create a biased elastic contact.

2. Printer head thin-film resistor structure and interconnections, comprising in combination a resistive layer and a conductor layer formed on a predetermined region of an isolated substrate, and the above-mentioned conductor layer having an opening in myself over the resistive layer, forming a resistive heating element, an insulating barrier layer over the said conductor layer having a surface geometry that opens a pre-defined area mentioned conductor layer, the metal layer on the insulating barrier layer extending from the mentioned conductor layer down to an adjacent area referred to isolated substrate on which no conductor layer, whereby the layer of metal above mentioned adjacent area mentioned isolated the substrate forms a relatively large and flat area of electrical contact to create a biased elastic contact.

3. The structure according to claim 2, in which a small hole in said insulating barrier layer to reveal the above-mentioned layer p is wodnika for connection with the said layer of metal.

4. The structure according to claim 2, in which the aforementioned insulating barrier layer formed with a smaller lateral size than those mentioned layer of the conductor, so that turned out to be opened regional area mentioned layer of the conductor to receive the above-mentioned metal layer in electrical contact with the latter.

5. Thin-film structure interconnects comprising a resistive layer and a conductor layer formed on it, located on a predefined area of an isolated substrate, and the above-mentioned conductor layer having an opening in myself over the resistive layer, forming a resistive heating element, an insulating barrier layer over the said conductor layer and having a surface geometry that opens a pre-defined area mentioned conductor layer and the metal layer on the insulating barrier layer, extending from the exposed predetermined region mentioned conductor layer down to an adjacent area referred to isolated substrate, under which there appears no conductor layer, whereby the layer of metal over mentioned adjacent area referred to isolated substrate forms a relatively large and flat area, remote from the conductor layer, to create a biased elastic contact.

N is Fig.-1.5 presents the main variant of the structure of the printer head and the patterns of interconnection and the production stages of this variant of the structure in accordance with the in the prototype method, and Fig - alternative structure of the printer head and the structure of the interconnect according to claim 3. the formula of the prototype.

On Fig presents the section of the structure after deposition on the surface, isolated by the dielectric 2 of the substrate 1, resistor 3 and 4 conductive layers.

On Fig presents incision patterns after forming in the right part of the isolated substrate by means of lithography and subsequent etching through the first photoresist mask resistive layer 5 and the layer of conductor 6, based on a drawing.

On Fig presents incision patterns after forming method of lithography and subsequent etching through the second photoresist mask area with the formation of Windows 7 in the conductor layer over the resistive layer, forming a resistive heating element 8 in the resistive layer.

On Fig presents the section of the structure after forming a lithographically through a third mask of photoresist and subsequent etching of a two-layer 9 and 10, an insulating barrier layer over the said layer of the conductor, and the subsequent lithography through a fourth mask of photoresist, exposing and etching a window 11 in the above-mentioned insulating barrier layer.

On Fig presents the section of the structure after the deposition of the metal layer being in electrical contact with the said conductor layer mentioned through the window, and distribution of the metal layer 12 from the layer of the conductor through the said window adjacent the left plot mentioned isolated substrate so that the wiring of the metal layer forms a relatively large and flat area, remote from the layer of conductor to create after covering additional metal layer 13 is shifted elastic contact 14.

As a result, the prototype [5] eliminates the disadvantage of having a place in the analogue of [2] and consists in instability and reduced service life of the heating element that is not protected by an insulating barrier layer, in contact with him and the evaporation of the ink. As shown in Fig, in the prototype is formed an insulating barrier layer over the heating element.

The main variant of the structure interconnects the prototype provides standard classical scheme of implementation of the contact metal layer with the conductor layer through the window that is opened in the insulating barrier layer. This ensures the constancy of the contact area, cleaning the contact surface, the stability of the contact.

On Fig presents another scheme contact metal layer to the layer of the conductor (without opening a window in the insulating barrier layer), resulting from the fact that part of the conductor 6 is left not closed isolating barriers is s ' layer. While the wiring of the metal layer 12 is in contact with open plot layer and the conductor is then performed on the adjacent left isolated area of the substrate. Part of the wiring layer of metal is placed on the insulating layer over the heating element in the form of areas of the metal layer 15 for the concentration of heat and evaporation of ink and a substantial increase in service life of the printer head.

However, the introduction of the insulating barrier layer in the prototype provides the operations for opening a window in the insulating barrier layer for shielding the wiring of the metal layer to a layer of a conductor, such as the formation of the photoresist mask, plasma etching of the insulating barrier layer through the mask to the surface of the conductor layer, removing the photoresist, and Stripping the surface layer of the conductor.

The insulating barrier layer, consisting in the prototype of the layer of silicon nitride and silicon carbide, is etched using a plasma-chemical etching. When this happens additional zadubovie (additional polymerization) of the photoresist, and etching Windows in the plasma transfer mask photoresist etching products, zagryaznyayushikh the photoresist and further complicating its removal.

Remove zagubinoga photoresist after opening the window in the insulating barrier layer to a layer of metal is who the conductor is carried out in an oxygen plasma, removes much zadubiennie photoresists. When exposed to oxygen plasma, the surface of the insulating barrier layer can be modified with the formation of oxygen linkages, the surface can be formed of carbon compounds.

At the same time to the surface of the insulating barrier layer while using the metal wiring must meet the requirements for purity and structural perfection of the surface, providing adhesion of the metal and formation of stable β phase tantalum (TA)used in the prototype as the lower layer of two-layer wiring metal.

Particularly high demands on the surface of the insulating barrier layer is required upon formation of ground metal over the resistive heating element to heat concentration and evaporation of the ink, due to thermal cycles, which is exposed to the structure of the printer head when the heating resistor for the evaporation of ink in the process.

However, the method declared in the prototype does not include special technologies for cleaning the surface of the insulating barrier layer before forming the wiring metal taking into account the possible use of wiring for forming a pad metal over the heating element, demanding high adhesion of the metal during thermal cycles (rapid repetitive and the changes of temperature in a wide temperature range.

Object of the invention is the achievement of the technical result consists in increasing the quality and reliability of the printer head with a thin-film resistor and the structure of the interconnections through the use of the method of manufacturing a structure interconnects the processing technology of the insulating barrier layer to provide the Etchant solution to clean and restore the properties of the insulating barrier layer to increase the adhesion of the wiring of the metal layer to the insulating barrier layer and, especially, the adhesion sites of the metal layer to the insulating barrier layer over the heating element subjected to repeated heating and cooling by evaporation of the ink.

To achieve the mentioned technical result in the method of manufacturing a thin-film structure interconnects printer head with a thin-film resistor, comprising the deposition of a resistive layer and the conductor layer on the insulated substrate, forming a picture layers deposited on the insulated substrate, forming a resistive heating element, forming an insulating barrier layer on top of the figure mentioned conductor layer, forming a window in said insulating barrier layer, creating a metal layer being in electrical contact with the said picture layer of the conductor through the mentioned is the OSC, having a geometry that opens a pre-defined area of the above figure, the layer of the conductor, running the wiring from the metal layer from the above picture layer of the conductor through the said window in the insulating barrier layer on the adjacent plot mentioned isolated substrate so that the wiring layer of metal on said adjacent site mentioned insulating substrate forms a relatively large and flat area, remote from the mentioned figure, the conductor layer, to create a biased elastic contact before performing wiring of the metal layer is treated with the surface of the insulating barrier layer to provide the Etchant solution, providing cleanup and restoration of the surface of the insulating barrier layer and the wiring layer of metal of said the picture layer of the conductor through the said window in the insulating barrier layer is performed not only on the surrounding area referred to isolated substrate, but at the same time form the area of the wiring layer of metal pads on the insulating barrier layer over the heating element, used as a stabilizing surface evaporation.

Thus, the distinctive features of the invention is that the method of manufacturing a thin-film structure interconnects printer head that is coplenary resistor before performing wiring of the metal layer is treated with the surface of the insulating barrier layer in the solution provide the Etchant, providing cleanup and restoration of the surface of the insulating barrier layer, and the wiring of the metal layer from the above picture layer of the conductor through the said window in the insulating barrier layer is performed not only on the surrounding area referred to isolated substrate, but at the same time form the area of the wiring layer of metal pads on the insulating barrier layer over the heating element, used as a stabilizing surface evaporation.

Conducted patent studies have shown that the combination of the features of the invention is a novel that proves the novelty of the proposed method. In addition, patent research showed that in the literature there are no data showing the influence of the characteristics of the invention to achieve a technical result, which confirms the inventive step of the proposed method.

In the present invention, after forming the insulating substrate, a resistive layer of TaAl and the conductor layer of AlCu on izolirovannoi substrate, deposition of the insulating barrier layer, the first Si3N4and then SiC, through a common mask to form a photoresist pattern layer insulating barrier layer and the transition of the contact window to the layer of the conductor. Layers of Si3N4and SiC is etched using plasmochemical is anyone etching. This provides a wedge etching from 30 to 60° depending on the mode of tanning mask of photoresist. Given the additional tanning photoresist during the etching plasma, the presence of open site Explorer, the process of removing the photoresist mask is performed in an oxygen plasma.

The surface of the SiC can be modified, particularly heavily contaminated zagublennymi particles of photoresist and formed during processing in an oxygen plasma carbon compounds and oxygen bonds.

At the same time to the SiC surface in the deposition of The high demands on purity.

The film That after the application shall be in the state β phase having good adhesion to SiC. Any changes to the SiC surface can lead to The transition to the next phase, which inevitably leads to poor adhesion and peeling of the applied layer of metal.

Especially it can be shown for a site of evaporation over the heating element exposed to thermal cycles.

In order to restore the SiC surface after plasma chemical optotek associated with opening Windows, has been researched and selected the stain composition of the HF-NH4mixed with glycerol in a ratio of 104:514:336.

Processing in the specified provide the Etchant provides restoration and cleaning of the surface of the upper insulating Barinov the SiC layer, broken after a hard plasma optotek.

On Fig.-2.5 presents the main stages of the production patterns of interconnections according to the invention.

On Fig presents the section of the structure after deposition on the surface of the insulated dielectric 2 of the substrate 1 resistive 3 and 4 conductive layers.

On Fig presents incision patterns after forming in the right part of the isolated substrate by means of lithography and subsequent etching through the first photoresist mask resistive layer 5 and the layer of conductor 6, based on a drawing.

On Fig presents incision patterns after forming method of lithography and subsequent etching through the second photoresist mask area with the formation of Windows 7 in the conductor layer over the resistive layer, forming a resistive heating element 8 in the resistive layer.

On Fig presents incision patterns after forming the two-layer 9 and 10, an insulating barrier layer over the said layer of conductor and simultaneously opening method of lithography and subsequent etching through a third mask, the photoresist pattern layers 9, 10 of the insulating barrier layer and the window 11 in the above-mentioned insulating barrier layer.

On Fig presents the section of the structure after removal of the mask of photoresist and processing the surface of the insulating bergern the layer in a special solution provide the Etchant and the deposition of a metal layer on the pretreated surface of the insulating barrier layer formation through a window in the insulating barrier layer electrical contact with the above-mentioned conductor layer through the said box and run wiring from the metal layer 12 from the layer of the conductor through the said window adjacent the left plot mentioned isolated substrate so that the wiring of the metal layer forms a relatively large and flat area, remote from the layer of the conductor, to create, after covering the additional metal layer 13, the offset of the spring contact 14, and at the same time from the layer of metal are formed on the right pad 15 on the heating element, used as a stable surface evaporation.

Example: On the silicon substrate of the brand EFC or KDB thickness of 525±25 μm (the resistance more than 1 Ohm·cm) thermal oxidation to form a layer of silicon dioxide of a thickness of 1.7±0.1 μm. On the oxidized surface of the plate sprayed layers TA and AlCu in the same process. The TaAl layer thickness of 0.11-0.12 μm is used as the resistive layer, contains 50±10 atom.% Al and has a surface resistance of 27±3 Ohms/ cm2the specific resistance of the layer of conductor AlCu thickness of 0.5-0.6 μm is 3.5±0.5 µohm·see

The first and second masks for lithography to form the wiring to the resistor layer and the conductor determines the length of the resistor.

AlCu is etched with the gate in the liquid provide the Etchant. Etching TaAl is also carried out in liquid t is avatele. Next on plasma-chemical installation in the same process, is deposited an insulating dielectric consisting of Si3N4and SiC, respectively, the thickness of the 4400 and 2600 microns with an accuracy of 15%. Using a third mask patterned insulating barrier layer and a contact window in it to a layer of the conductor. Etching a window in duchaineau composie insulating layer is performed in a plasma with a wedge of dielectric layers between 30 and 60°.

Next, the structure is processed to provide the Etchant solution having a composition comprising hydrofluoric acid 45-50%, aqueous solution of ammonium fluoride 40% mixed with glycerol in a ratio of 104:514:336 parts by volume, with the addition of 1 liter of the above solution of 20 ml of concentrated sulfuric acid.

Then napylyaetsya first layers TA and Ni thickness 5500+550 a and 4500+500 And correspondingly with mandatory ion cleaning of the surface of the previous layer. The fourth mask forming region around Ni contact Windows. The fifth mask forms a pad over The heating elements of the resistor. Nickel and tantalum etched in a liquid solution. In conclusion, a layer of Golden Nickel by electroplating thickness of 300-700 A.

The example described above is a special case in which the present invention is used.

The present invention can be used for alternative types of structures, not o the facility beyond the patent claims.

Literature

1. U.S. patent No. 4535343.

2. U.S. patent No. 5636441.

3. U.S. patent No. 6139131.

4. U.S. patent No. 6280019.

5. U.S. patent No. 4862197.

1. A method of manufacturing a structure interconnects printer head with a thin-film resistor, comprising the deposition of a resistive layer and the conductor layer on the insulated substrate, forming a picture layers deposited on the insulated substrate, forming a resistive heating element, forming an insulating barrier layer on top of the figure mentioned conductor layer, forming a window in said insulating barrier layer, creating a metal layer being in electrical contact with the said picture layer of the conductor through the said window having a geometry that opens a pre-defined area of the above figure, the layer of the conductor, running the wiring from the metal layer from the above picture layer of the conductor through the said window in the insulating barrier layer in the surrounding area referred to isolated substrate so that the wiring layer of metal on said adjacent site mentioned isolated substrate forms a relatively large and flat area, remote from the mentioned figure, the conductor layer, to create a biased elastic contact, wherein before performing wiring layer m is metal treated surface of the insulating barrier layer in the solution provide the Etchant, providing cleanup and restoration of the surface of the insulating barrier layer, and the wiring of the metal layer from the above picture layer of the conductor through the said window in the insulating barrier layer is performed not only on the surrounding area referred to isolated substrate, but at the same time form the area of the wiring layer of metal pads on the insulating barrier layer over the heating element, used as a stabilizing surface evaporation.

2. The method according to claim 1, characterized in that the solution provide the Etchant providing cleanup and restoration of the surface of the insulating barrier layer has a composition including hydrofluoric acid 45-50%, aqueous solution of ammonium fluoride 40% in a mixture with glycerol in the ratio: 104:514:336 parts by volume with the addition of 1 liter of the above solution of 20 ml of concentrated sulfuric acid 94%.

3. The method according to claim 1, characterized in that the processing time in the solution provide the Etchant is 15±5 sec.



 

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