Method for making a printer head with thin-film resistor and printer head device

FIELD: ink jet printers.

SUBSTANCE: method includes precipitating resistive layer and conductive layer on insulated substrate, forming a resistive heating element, forming of insulating barrier layer above contour of said conductive layer, forming of gap in said barrier layer, forming of metallic layer being in electrical contact with said conductive layer contour through said gap, having geometry, which opens predetermined portion of said contour of conductive layer, making a layout from metallic layer from said contour of conductive layer through said gap in insulating barrier layer to adjacent portion of said insulated substrate, so that layout from metallic layer on said adjacent portion of said insulating substrate forms a relatively large and flat area, remote from said conductive layer contour, for forming displaced spring contact. After precipitation of resistive layer and conductive layer on insulating substrate, contour of conductive layer is formed first, having a recess, forming later said resistive heating element, and then contour of resistive layer is formed with overlapping of conductive layer contour for value, exceeding precision of combination during lithography process and error of dimensions during etching of resistive layer.

EFFECT: higher quality, higher reliability, higher efficiency.

2 cl, 10 dwg

 

The invention relates to the production of inkjet printers, namely printheads for inkjet printers with small holes in the head, through which program are ejected ink droplets.

The ejection of ink droplets through the apertures (nozzles) occurs due to the heating and evaporation of the ink in a special chamber which receives the ink due to heat from the thin-film resistor when current flows.

The first reports about the device and methods of manufacturing thin film resistor structures Hewlett - Packard appeared in 80 years of the last century [1, 2].

In the above [2] the method of manufacturing the heating element for a printer head in the form of a thin-film resistor structure, including the creation of an isolated substrate, forming on it a layer of resistive material to create a heating element, the deposition of the layer of conductive adhesive material, a layer of a material with high conductivity and the upper metal layer for the fabrication of conductive electrodes.

The principal disadvantage of this method was the lack of an insulating protective layer on the resistor, the surface of which there are processes of heating and evaporation of ink that can affect the stability of the heat resistor, determine the quality and reliability of the printer.

This disadvantage is eliminated in subsequent modifications of the printer heads Hewlett - Packard [3, 4].

Closest to the proposed invention is [5] "the Process* production of thermal ink printer heads, and the structure of the integrated device manufactured thereby"used in modern versions of the company, which claims a method of manufacturing a thin-film resistor structure of the printer head and printer head with thin-film resistor and the structure of the interconnections used in this method.

In [5] protected:

1. A method of manufacturing a thin-film resistor structure of the printer head, comprising forming on an isolated substrate resistive layer and the layer of the conductor, based on a drawing, the opening area in the conductor layer over the resistive layer, forming a resistive heating element in the resistive layer, forming an insulating barrier layer on top of the figure mentioned conductor layer, forming a window in said insulating barrier layer, creating a metal layer being in electrical contact with the said picture layer of the conductor through the said window having a geometry that opens a pre-defined area of the above figure, the layer of the conductor, running the wiring from the metal layer from the mention of the th pattern layer of the conductor through the said window adjacent land referred to isolated substrate, so the layout of the metal layer on the aforementioned grounds mentioned insulating substrate forms a relatively large and flat area, remote from the mentioned figure of the layer of conductor to create a spring biased contact.

2. Printer head thin-film resistor structure and interconnections, comprising in combination: a resistive layer and a conductor layer formed on a predetermined region of an isolated substrate, and the above-mentioned conductor layer having an opening in myself over the resistive layer, forming a resistive heating element, an insulating barrier layer over the said conductor layer having a surface geometry that opens a pre-defined area mentioned conductor layer, the metal layer on the insulating barrier layer extending from the mentioned conductor layer down to an adjacent area referred to isolated substrate on which no conductor layer, whereby the layer of metal above mentioned adjacent area mentioned isolated substrate forms a relatively large and flat area of electrical contact, to create a spring biased contact.*

3. The structure according to claim 2, in which a small hole in said insulating barrier layer to reveal referred to the Loy conductor for connection with the said layer of metal.

4. The structure according to claim 2, in which the aforementioned insulating barrier layer formed with a smaller lateral size than those mentioned layer of the conductor, so that turned out to be exposed edge area of the above-mentioned pattern of conductive tracks, for obtaining the above-mentioned pattern metal layer in electrical contact with the latter.

5. Thin-film structure interconnects comprising a resistive layer and a conductor layer formed therein and located in a predefined region of the isolated substrate, and the above-mentioned conductor layer having an opening in myself over the resistive layer, forming a resistive heating element, an insulating barrier layer over the said conductor layer and having a surface geometry that opens a pre-defined area mentioned conductor layer and the metal layer on the insulating barrier layer, extending from the exposed predetermined region mentioned conductor layer, down to the related area referred to isolated substrate, under which there appears no conductor layer, whereby the metal layer above mentioned adjacent area referred to isolated substrate forms a relatively large and flat area, remote from the layer of conductor to create a biased prog the frame contact.

On Fig.-1.5. presents the elements of the structure and main stages of its manufacture in accordance with [5], used in our application as a prototype.

On Fig. presents a section of the structure after deposition on the surface of the insulated dielectric 2 of the substrate 1 resistive 3 and 4 conductive layers.

On Fig. presents a section of the structure after forming in the right part of the isolated substrate by means of lithography and subsequent etching through the first photoresist mask resistive layer 5 and the layer of conductor 6, based on a drawing.

On Fig. presents a section of the structure after forming method of lithography and subsequent etching through the second photoresist mask area with the formation of Windows 7 in the conductor layer over the resistive layer, forming a resistive heating element 8 in the resistive layer.

On Fig. presents incision patterns after forming the two-layer 9 and 10, an insulating barrier layer on top of the figure mentioned conductor layer and the subsequent autopsy method of lithography and subsequent etching through a third photoresist mask window 11 in the above-mentioned insulating barrier layer.

On Fig. presents a section of the structure after the deposition of the metal layer being in electrical contact with the said picture layer of the conductor through the said window and to perform the surveillance wiring of the metal layer 12 from the above picture layer of the conductor through the said window adjacent the left plot mentioned insulated substrate, so the layout of the metal layer forms a relatively large and flat area, remote from the above picture layer of the conductor, to create after covering additional metal layer 13 is displaced spring contact 14.

As a result, the prototype [5] eliminates the disadvantage of having a place in the analogue of [2] and lies in the instability of the heating element during the penetration and evaporation of the ink is not protected by an insulating barrier layers.

However, the deposition of a metal layer on the surface of the insulating barrier layer, under which is located the resistive layer and the conductor layer, requires special configuration summary relief steps conductor layer and the resistive layer, preventing thinning and rupture of the insulating layer on the stairs and education as a result of unplanned contact (in this case, a short circuit) metal and conductive layers.

The relief of the steps should not have direct or negative angle, but only a positive slope with an angle less than 60 degrees. The presence of steep steps, close to direct a 90-degree angle, or the more negative of the angle of inclination of the layers of conductor and resistor actually leads to rupture the insulating barrier layer on the stairs and closing the upper metal layer and the layer of the conductor.

The problem in the case of the prototype, etc the individual is complicated by the necessity of etching simultaneously two different materials, having a different etching rate through one mask of photoresist: a layer of the conductor and the resistive layer. Uncertainty landforms that could lead to unplanned closure layers, and also different widths, and thus the value of the resistor element, which affects the quality, reliability of structures and the reduction in the percentage of yield.

This circumstance is connected with the formation of the resistive layer and the layer of the conductor as a General pattern lithography with a single photoresist mask when you have to manage both the etching processes of the two different material properties. Since the speed of etching them in one provide the Etchant by definition different, you should consider two options.

The first option, when the speed of the upper layer of the conductor is greater than the lower resistive layer. This leads to considerable care the size of the upper layer (conductor layer), since the etching rate of the lower layer is smaller. At first glance, this is not a particularly critical for the structure, since the upper layer plays the role of a lead electrode. And at this point, the electrodes travliata only from the sides. And the distance between electrodes is set to the next, the second lithography process, where you will be etching of the layer of the conductor above the resistor element, specifying the length of the resistor.

<> But the fact is that a significant etching of the upper layer relative to the bottom opens the bottom layer, which starts to travisa as from the side and from above, as you bleed it the top layer. This leads to a reduction in the width of the resistor.

And since etching processes occur under the mask of photoresist, formed in the gap relative to the isolated substrate, the exact calculation of the departure size is problematic, which affects the reproducibility of the results.

The second option etching, when the speed of the lower layer to provide the Etchant is higher than the top. In this case, there is a "hole" below the upper layer, leading to catastrophic consequences as a direct angle of relief.

Object of the invention is the achievement of the technical result consists in increasing the quality and reliability of the printer head and the percentage of yield in production, due to the exclusion of defects in the insulating layer on the steps of the structure, due to separate etching resistive and conductive layers, and improve the reproducibility of the resistor.

The problem is solved in the present invention, containing:

1. A method of manufacturing a printer head with a thin-film resistor, comprising the deposition of a resistive layer and the conductor layer on the insulated substrate, forming a picture layers deposited what's on the insulated substrate, forming a resistive heating element, forming an insulating barrier layer on top of the figure mentioned conductor layer, forming a window in said barrier layer, creating a metal layer being in electrical contact with the said picture layer of the conductor through the said window having a geometry that opens a pre-defined area of the above figure, the layer of the conductor, running the wiring from the metal layer from the above picture layer of the conductor through the said window in the insulating barrier layer on the adjacent plot mentioned isolated substrate so that the wiring layer of metal on said adjacent site mentioned insulating substrate forms a flat region, remote from the above picture layer of the conductor, to create a spring biased contact, after the deposition of the resistive layer and the conductor layer on the insulated substrate initially form the pattern layer of the conductor, which has in itself the opening, forming in subsequent resistive heating element, and then forming a pattern of the resistive layer with overlapping of the picture layer of the conductor by an amount exceeding the accuracy of alignment in the lithography process and the care of the dimensions of the etching resistive layer.

2. Printer head with thin-film resistor on this JV is to own, includes a resistive layer and a conductor layer formed on a predefined area of an isolated substrate, and the above-mentioned conductor layer having an opening in myself over the resistive layer, forming a resistive heating element, an insulating barrier layer over the said conductor layer having a surface geometry that opens a pre-defined area mentioned conductor layer, the metal layer on the insulating barrier layer, extending from the layer of conductor to an adjacent area referred to isolated substrate on which no conductor layer, whereby the layer of metal above mentioned adjacent area referred to isolated substrate forms a relatively large and flat area of electrical contact, for create a spring biased contact, figure resistive layer is larger than the picture layer of the conductor, blocking the picture layer of the conductor on the value of the registration accuracy in lithography and care size during the etching resistive layer.

Thus, the distinctive features of the invention is that the method of manufacturing a thin-film resistor printer head after the deposition of the resistive layer and the conductor layer on the insulated substrate initially form the pattern layer p is wodnika, has an opening that forms in subsequent resistive heating element, and then forming a pattern of the resistive layer with overlapping of the picture layer of the conductor by an amount exceeding the accuracy of alignment in the lithography process and the care of the dimensions of the etching resistive layer and the device printer heads, thin-film resistor and the structure of interconnections figure resistive layer is larger than the picture layer of the conductor, blocking the picture layer of the conductor on the value of the registration accuracy in lithography and care size during the etching resistive layer.

Conducted patent studies have shown that the combination of the features of the invention is a novel that proves the novelty of the proposed method. In addition, patent research showed that in the literature there are no data showing the influence of the characteristics of the invention to achieve a technical result, which confirms the inventive step of the proposed method.

In the present invention after the deposition of the resistive layer and the conductor layer over the whole wafer, and then the processes of lithography and etching patterned from a layer of the conductor with the simultaneous etching of the portion of the conductor over the alleged element of the resistor constituting the electrodes to which esistono. The etching process involves the processing of only one layer, and therefore technologically well manageable. This can be used as processes isotropic plasma chemical treatment in which the desired angle profile stage may be defined by the composition of the etching plasma using either initially formed profile in the photoresist mask, a portable forth on travesias layers, and a liquid etching methods, providing in principle the isotropic etching is also preferable in this case, the angle of the profile stage. A certain disadvantage of plasma-chemical etching methods is the low selectivity at the completion of etching of the upper layer to the lower layer.

Then the second lithography process and a subsequent etching process, forming the pattern of the resistive layer having a size greater than the size of the picture layer of the conductor, the value of registration accuracy in lithography and care size during the etching resistive layer. The process of etching, as the etching of the conductor layer, provides for the processing of only one layer, and therefore also technologically well-managed.

The specified execution structure and method of its production leads to the fact that eliminates the source of uncertainty in the etching width of the resistive layer, which improves the quality of the TWT structure, eliminates the potential of the circuit metal layer and the layer of the conductor, which increases the reliability of the structure are excluded catastrophic failures and, consequently, a growing percentage of the yield in the production process.

This sequence of distinctive features can eliminate the shortcomings of the prototype.

On Fig.-2.5. the structure and main steps of manufacturing the structure according to the invention.

On Fig. presents a section of the structure after deposition on the surface of the insulated dielectric 2 of the substrate 1 resistive 3 and 4 conductive layers.

On Fig. presents incision patterns after forming the resistive layer by means of lithography and subsequent etching through the first photoresist mask layer conductor 16 with the removal of the section in the conductor layer 17, forming a further resistive heating element 8 in the resistive layer.

On Fig. presents a section of the structure after forming method of lithography and subsequent etching process using the second photoresist mask pattern of the resistive layer 18 around the picture layer of the conductor and having a size greater than the size of the picture layer of the conductor, the value of registration accuracy in lithography and care size during the etching resistive layer.

On Fig. presents a cross-section structure of the URS after forming the two-layer 9 and 10, an insulating barrier layer on top of the figure mentioned conductor layer and the subsequent autopsy method of lithography and subsequent etching through a third photoresist mask window 11 in the above-mentioned insulating barrier layer.

On Fig. presents a section of the structure after the deposition of the metal layer being in electrical contact with the said picture layer of the conductor, through the said box and run wiring from the metal layer 12 from the above picture layer of the conductor through the said window adjacent the left plot mentioned isolated substrate so that the wiring of the metal layer forms a relatively large and flat area, remote from the above picture layer of the conductor, to create after covering additional metal layer 13 of mixed spring contact 14.

Example. On the silicon substrate of the brand EFC or KDB thickness of 525 + 25 μm (the resistance more than 1 Ohm·cm) thermal oxidation to form a layer of silicon dioxide of a thickness of 1.7±0.1 μm. On the oxidized surface of the plate sprayed layers TaAl and AlCu in the same process. The TaAl layer thickness of 0.11-0.12 μm is used as the resistive layer, contains 50±10% Al and has a resistance of 27±3 Ohm·cm, the resistance of the layer of conductor AlCu thickness of 0.5-0.6 μm is 3.5±0.5 µohm·see

The first mask by lithography to form the wiring to the resistor layer and the conductor determines the length of the resistor. AlCu is etched with the gate in the liquid provide the Etchant.

The second mask lithography forms a resistive layer around RA the vodka from the layer of conductor and defines the width of the resistor. The second mask covers the first to 2.0 μm. Etching TaAl is also carried out in the liquid provide the Etchant. Next on plasma-chemical installation in the same process, is deposited an insulating dielectric consisting of Si3N4and SiC, respectively, the thickness of the 4400 and 2600 microns with an accuracy of 15%. Using a third mask is formed in the contact window to the layer of the conductor. Etching a window in the insulating layers is performed in a plasma with a wedge of dielectric layers from 30 to 60 degrees. Next napylyaetsya layers TA and Ni thickness 5500+550 Å and 4500+500 Å accordingly with the required ionic cleaning of the surface of the previous layer. The fourth mask forming region around Ni contact Windows. The fifth mask forms a pad over The heating elements of the resistor. Nickel and tantalum etched in a liquid solution, In the end, a layer of Golden Nickel by electroplating thickness of 300-700 Å.

The example described above is a special case in which the present invention is used.

The present invention can be used for alternative types of structures, not beyond the patent claims.

Literature:

1. U.S. patent 4535343.

2. U.S. patent 5636441.

3. U.S. patent 6139131.

4. U.S. patent 6280019.

5. U.S. patent 4862197.

1. A method of manufacturing a printer head with a thin-film resistor comprising aside is their resistive layer and the conductor layer on the insulated substrate, the formation of the drawings of the layers deposited on the insulated substrate, forming a resistive heating element, forming an insulating barrier layer on top of the figure mentioned conductor layer, forming a window in said barrier layer, creating a metal layer being in electrical contact with the said picture layer of the conductor through the said window having a geometry that opens a pre-defined area of the above figure, the layer of the conductor, running the wiring from the metal layer from the above picture layer of the conductor through the said window in the insulating barrier layer on the adjacent plot mentioned isolated substrate so that the wiring layer of metal on said adjacent site mentioned insulating substrate forms a relatively flat region, remote from the mentioned figure, the conductor layer, to create a biased spring contact, wherein after the deposition of the resistive layer and the conductor layer on the insulated substrate initially form the pattern layer of the conductor, which has in itself the opening, forming in subsequent resistive heating element, and then forming a pattern of the resistive layer with overlapping of the picture layer of the conductor by an amount exceeding the accuracy of alignment in the lithography process and the care razmera the etching resistive layer.

2. The method according to claim 1, characterized in that the formation of the pattern layer of the conductor, which has in itself the autopsy is performed using the first mask lithography etching in liquid polling to provide the Etchant layer of the conductor, not etching resistive layer and creates a positive slope degree of relief.

3. The method according to claim 1, characterized in that the formation pattern of the resistive layer is performed using a second mask lithography etching in a liquid to provide the Etchant resistive layer, creating a positive slope degree of relief.

4. The method according to claim 1, characterized in that the pattern of the resistive layer is formed so that it covers the pattern layer of the conductor by an amount equal to 1-3 microns.

5. Printer head with thin-film resistor according to this method, including a resistive layer and a conductor layer formed on a predefined area of an isolated substrate, and the above-mentioned conductor layer having an opening in myself over the resistive layer, forming a resistive heating element, an insulating barrier layer over the said conductor layer having a surface geometry that opens a pre-defined area mentioned conductor layer, the metal layer on the insulating barrier layer, extending from the layer of the conductor adjacent on the region, referred to the isolated substrate on which no conductor layer, whereby the layer of metal above mentioned adjacent area referred to isolated substrate forms a relatively large and flat area of electrical contact, to create a spring biased contact, characterized in that figure resistive layer is made larger than the picture layer of the conductor, blocking the picture layer of the conductor by an amount exceeding the accuracy of alignment in lithography and care size during the etching resistive layer.



 

Same patents:

FIELD: micro- and nanoelectronics, micro- and nanomechanics where insulated conductors are used.

SUBSTANCE: proposed method for filling pockets in solid body with conducting material includes coating of solid-body surface, bottom, and side walls of mentioned pockets with first layer that functions as barrier material preventing diffusion of mentioned conducting material in solid body; application of second layer onto first one that functions as wetting layer for conducting material; application of third layer by way of physical or chemical deposition onto third one from gas phase that has in its composition mentioned conducting material; coating of third layer with fourth one that also incorporates conducting material; melting of conducting material by heating and profile leveling; material melting by heating is conducted after applying third layer and fourth layer is applied by any method of physical deposition from gas phase, chemical deposition from gas phase, chemical deposition from solution, electrochemical deposition, or chemical-mechanical deposition.

EFFECT: facilitated procedure, enlarged functional capabilities.

12 cl, 17 dwg

FIELD: electronic engineering; integrated circuit manufacture on silicon.

SUBSTANCE: proposed method includes formation of active areas of devices on substrate; masking; opening of contact cuts for active areas; formation of metal deposition system that has amorphous metallide possessing negative mixing heat and incorporating components characterized in higher pressure of inherent vapors or higher sublimation heat than substrate material, and other components of metal deposition system. High stability of metal deposition system provides for manufacturing semiconductor device capable of operating at high temperatures approximately over 650 °C.

EFFECT: provision for preventing ingress of metal deposition system components into active area and escape of impurities from the latter.

6 cl, 2 dwg, 1 tbl

The invention relates to the field of electronic engineering, microelectronics and can be used for forming the surface ohmic contacts in thin-film field-effect transistors, memory elements, solar cells on the barrier type Schottky, etc

The invention relates to plasma technology microelectronic devices and can be used for the process of metallization structures with submicron dimensions of the elements

The invention relates to semiconductor electronics and can be used in the manufacture of solid-state devices and electrodes

The invention relates to electronic devices, and more specifically to the technology of production of integrated circuits (ICS) on silicon, and can be used for manufacturing a rectifying and ohmic contacts to the shallow p-n junctions and interconnects

Inkjet printhead // 2229388
The invention relates to the technique of inkjet printing and can be used in inkjet printers and other printing devices

The invention relates to the technique of inkjet printing and can be used in inkjet printers and other printing devices

The invention relates to an injector device and method for the discharge of liquid from microinjector

The invention relates to inkjet printing heads and contains many parallel channels, each separated from the adjacent channel side walls, able to move in the transverse direction in response to the control signal

The invention relates to means of communication and recording information on paper or other media and can be used in a thermal jet printing devices

The invention relates to devices for displaying information on a paper medium

FIELD: ink jet printers.

SUBSTANCE: method includes precipitating resistive layer and conductive layer on insulated substrate, forming a resistive heating element, forming of insulating barrier layer above contour of said conductive layer, forming of gap in said barrier layer, forming of metallic layer being in electrical contact with said conductive layer contour through said gap, having geometry, which opens predetermined portion of said contour of conductive layer, making a layout from metallic layer from said contour of conductive layer through said gap in insulating barrier layer to adjacent portion of said insulated substrate, so that layout from metallic layer on said adjacent portion of said insulating substrate forms a relatively large and flat area, remote from said conductive layer contour, for forming displaced spring contact. After precipitation of resistive layer and conductive layer on insulating substrate, contour of conductive layer is formed first, having a recess, forming later said resistive heating element, and then contour of resistive layer is formed with overlapping of conductive layer contour for value, exceeding precision of combination during lithography process and error of dimensions during etching of resistive layer.

EFFECT: higher quality, higher reliability, higher efficiency.

2 cl, 10 dwg

FIELD: printers.

SUBSTANCE: printer has ink cartridge, carriage where ink cartridge is installed, and printing head mounted onto carriage. Ink cartridge has case for placing ink, ink supplying department where hole for feeding ink is formed, memory unit for storing data on ink in case, contact outputs unit disposed onto second side wall of case and connected with memory unit. Hole for supplying ink is disposed onto first side wall of case. Cartridge has fitting element protruding from second side wall of case for correct installation of ink cartridge relatively printer at the moment when ink cartridge is placed into printer. Precise connection of ink's output unit and printer's output unit is provided. Higher degree of freedom is provided at installation of ink cartridge's contact output unit.

EFFECT: improved efficiency of operation.

28 cl, 16 dwg

FIELD: jet printing, in particular, narrow-film jet printing head having control circuits on field transistors configured so as to compensate for the parasitic resistance of supply routes.

SUBSTANCE: the narrow jet printing head (100A) has effective control circuits on field transistors, which are configured so as to compensate for the parasitic resistances of the supply routes (86a, 86b, 86c, 86d). In addition, the jet printing head has ground buses, which overlap the active areas of the control circuits on field resistors.

EFFECT: provided compactness of the head at a large number of drop formers.

21 cl, 15 dwg

Up!