The active element of a semiconductor laser with transverse pumping excitation beam (options)

 

(57) Abstract:

The invention relates to the field of quantum electronics, semiconductor lasers with transverse pumping excitation beam. Proposed active element of the semiconductor laser, which is a set superiorcasino placed on the General hadproved rectangular parallelepipeds of the semiconductor material. Two parallel faces of each of them form an optical resonator, excited face them perpendicular. Resonator faces of all parallelepipeds set parallel to each other. The distance between the planes in which lie the excited faces of adjacent parallelepipeds, does not exceed the depth zone of the resonator faces of the parallelepiped, which comes from a laser. In one of the variants in each of the parallelepipeds with sides excited by a beam faces made equidistant grooves, the depth of which exceeds the penetration depth of the exciting beam in the material of the box. The parallelepipeds are arranged relative to each other so that the grooves of one of the parallelepipeds are located at half the distance between adjacent grooves of a parallelepiped, Kanak istihaada the lower threshold and the divergence of the radiation. 2 S. and 1 C.p. f-crystals, 5 Il.

The invention relates to the field of quantum electronics, and more specifically to semiconductor lasers with transverse pumping excitation beam, which can be used to create laser systems for interferometry, landing systems, aircraft, dannemarie, environmental monitoring, medicine, etc.

Known active element of a semiconductor laser with transverse pumping excitation beam /Bogdankevich O. C., Darzac S. A., P. Eliseev, Semiconductor lasers. M. , Nauka, 1975/ [1] representing a rectangular parallelepiped of a semiconductor material with plane-parallel side faces forming an optical resonator. The face of the box, perpendicular to these surfaces is irradiated excitation beam, such as an electronic or optical; the opposite face of the parallelepiped is strengthened (soldered, glued) on hadproved.

The disadvantage of the active element is not sufficiently high efficiency of its generation, especially if you need to get the high power of the generated radiation. This is because the coefficient of nonresonant poterville, tens of inverse centimeters). In this regard, to reduce the influence of internal losses for achieving maximum efficiency of generation, it is necessary to use small (tenths and hundredths of a millimeter) length resonators. On the other hand, since the radiation loss associated with the radiation output of the resonator are fixed, with a decrease in the length of the active region in the cavity increases the generation threshold. Thus, the requirements of high efficiency and low threshold are in conflict with each other. This leads to the necessity of choosing the optimal length of the resonator, whereby the efficiency reaches its maximum, but it is far from possible.

Another disadvantage of the known active elements is a high probability of destruction of the resonator faces its own radiation active elements in high power laser radiation due to the fact that the radiation exits through a relatively small portion of the resonator mirrors of the active element adjacent to the excited surface. The area of this part is limited by the depth of the excited region of a semiconductor according to one of the coordinates and width of the excited region (Shi the particular radiation can be used for exciting the beam of the big sizes, however, the possibility of such increase is limited by the length of the resonator in the direction of its optical axis (otherwise part of the beam power will be wasted) and increased losses on the amplification of spontaneous emission in the direction of the long side of the box, which also reduces the efficiency of generation. To prevent amplification of spontaneous emission in the direction of the long side of the box on the excited surface grooves are formed parallel to the axis of the resonator of the laser, the depth of not less than the depth of the excitation of the material of the box. In particular, when the electronic excitation of the depth of the excitation is determined by the penetration depth of electrons in the semiconductor, the values of which depend on the electron energy and semiconductor material, and, for example, semiconductor crystals, CdS, GaAs at a beam energy of 30-40 Kev, these values are approximately 3-4 microns. However, the formation of grooves also reduces the efficiency and power generation, as part of the active element under the groove is broken, and this leads to unnecessary loss of power of the exciting beam.

These drawbacks are partially eliminated in the multi-element active mogolia the parallelepipeds, strengthens the overall hadproved so that one of the resonator faces one of the parallelepipeds lies in the plane opposite to the resonator adjacent faces of the parallelepiped, and the plane faces of the first of these parallelepipeds, which he strengthens hadproved coincides with the plane of adjacent faces of a parallelepiped, the irradiated excitation beam, or even below it. Thanks to such design, a large number of independently emitting conventional active elements, described in [1], is simultaneously excited by a beam of large cross section, however, neither the excitation beam, or the beam exit of each of the neighboring elements do not interfere. With such constructions the received light pulses with a power of several MW /O. Century Bogdankevich, M. M. Zverev, A. N. Mestvirishvili, A. S. Nasibov, A. N. Pacenow, A. I. Svintsov, K. P. Fedoseev. Power semiconductor quantum generator pumped Elektronnyi beam. Quantum electronics, No. 2, 1971, pp. 92-93./ [2] . In this design, the radiation power is the result of the incoherent summation of the radiation fields of the individual active elements, and parameters such as the threshold and efficiency, defined individuality in the direction of the long side of the box on the excited surface grooves are formed, parallel to the axis of the resonator of the laser, the depth of not less than the depth of the excitation of the material of the box, as in [1]. Described multi-element active element is the closest analog to offer.

One drawback of the active element are not high enough values of efficiency and output power, high values of the threshold and the divergence of the radiation. Received to date values of the generation efficiency of multielement semiconductor lasers pumped by electron beam is not more than 2-4% [2], which is significantly below the limit value.

The invention solves the problem of increasing the efficiency and output power, lower threshold and divergence of the radiation multiple active elements semiconductor lasers with transverse pumping excitation beam.

The task is solved in that the active element of the semiconductor laser with transverse pumping excitation beam, made in the form set superiorcasino placed on the General hadproved rectangular parallelepipeds of semiconductor material, two parallel faces of each of which form an optical Resellers among themselves, the distance between the planes in which lie the excited faces of adjacent parallelepipeds, less than the depth zone of the resonator faces of the parallelepiped, which comes from a laser.

The task is solved in that the active element of the semiconductor laser with transverse pumping excitation beam, made in the form set superiorcasino placed on the General hadproved rectangular parallelepipeds of semiconductor material, two parallel faces of each of which form an optical resonator excited by the surface they are perpendicular, and the resonator faces of all parallelepipeds set parallel to each other, in each of the parallelepipeds with sides excited by a beam surfaces are made equidistant grooves, the depth of which exceeds the penetration depth of the exciting beam in the material of the box, the distance between the planes in which lie the excited faces of adjacent parallelepipeds, less than the depth zone of the resonator faces of the parallelepiped, from which comes the laser radiation, the parallelepipeds are arranged relative to each other so that the grooves of one of the parallelepipeds are half rasstoyaniezamok material.

The invention is illustrated in Fig. 1-5.

In Fig. 1 schematically shows in sectional view the first version of the proposed active element, where:

1 - hadproved;

2 - semiconductor parallelepipeds;

3 - resonator facets;

4 - excited face;

5 - zone resonator faces of the parallelepiped, which comes from the laser light;

6 - stimulating beam.

In Fig. 2 schematically depicts a variant of the proposed active element dividing grooves on the excited faces where:

1 - hadproved;

2 - semiconductor parallelepipeds;

3 - resonator facets;

4 - excited face;

5 - zone resonator faces of the parallelepiped, which comes from the laser light;

6 - stimulating beam;

7 - groove.

In Fig. 3 presents the dependence of the lasing threshold of the number N associated parallelepipeds with different values of the coefficient of optical communication between the parallelepipeds, showing what part of the radiation of one of the parallelepipeds gets in the adjacent box

< / BR>
where Z is the distance between the planes in which lie the excited faces of adjacent parallelepipeds,

Z>In Fig. 4 shows the dependence of output power from a number of related semiconductor parallelepipeds obtained in the experimental studies of multi-element active element according to the invention.

In Fig. 5 presents the pattern (distribution of the angular density of radiation) laser with an active element according to the invention, when different number of related semiconductor parallelepipeds.

The active element is a semiconductor laser (Fig. 1) is a set superiorcasino placed on the General hadproved 1 rectangular parallelepipeds 2 of semiconductor material, two parallel faces of each of which form a resonator face 3 of the optical resonator excited face 4 them perpendicular. Resonator faces of all parallelepipeds set parallel to each other. The distance between the planes in which lie the excited faces of adjacent parallelepipeds, does not exceed the depth of the zone 5 resonator faces of the parallelepiped, which comes from the laser light when pumped by a stimulating beam 6.

In the second version of the proposed active element (each of the parallelepipeds with sides excited by a beam faces made equidistant grooves 7, the depth of which exceeds the penetration depth of the exciting beam in the material of the box, the parallelepipeds are arranged relative to each other so that the grooves of one of the parallelepipeds are located at half the distance between the grooves of the other of the box. The grooves can be filled with absorbent material.

The device operates as follows.

When the pump excitation beam 6 of the proposed active element in the excited region of each of the parallelepipeds 2, adjacent to the excited faces 4, is generated laser radiation coming through the zone 5. Due to the fact that the distance between the planes in which lie the excited faces of adjacent parallelepipeds, less than the depth zone of the resonator faces of the parallelepiped, which comes from the laser light emission part of each parallelepiped is beyond its limits, contributing to the radiation output is only active element. Another part of the radiation falls in the adjacent box. Thus, each parallelepiped under the influence of pumping, in addition to its own spontaneous radiation is the radiation of the adjacent box. In fact, every parallel the peda. This system has a lower threshold than the oscillation threshold of the active element, including one parallelepiped. The lasing threshold of the device will be determined not only by the parameters of each parallelepiped, and the optical connection between them. With the increasing number of related parallelepipeds the threshold decreases, and the decrease is greater, the greater the magnitude of the optical communication between them. The lower threshold leads to an increase in the efficiency of generation, and hence power generation. The increase in the number of parallelepipeds can proportionally increase the cross-sectional area of the output end of the device. In Fig. 4 shows the experimental dependence of the output power from a number of related parallelepipeds. Used single crystals of CdSSe, the length of each resonator of the laser was equal to 0.7 mm For pump used electron beam with an energy of 300 Kev at a pulse duration of 1 NS. The magnitude of the coupling coefficient in the experiments was about 0.5. It is seen that even when the number of items increases from 2 to 3 increases the output power by more than an order that is associated with reduced threshold generalizatio laser with the proposed active element. In one embodiment (Fig. 1) is pumped to a stimulating beam of belt profile (electronic or optical), which are exposed to all the parallelepipeds of the active element, in this case, it is possible to use the scanning mode active element to increase the average power.

In another embodiment (Fig. 2) the pump is exciting beam (electronic or optical) square or round profile, the transverse size of which is chosen equal to the size described above, the proposed active element In this embodiment excited by a beam on the faces of each of the parallelepipeds made equidistant grooves, the depth of which exceeds the penetration depth of the exciting beam in the material of the box, the parallelepipeds are arranged relative to each other so that the grooves of one of the parallelepipeds are located at half the distance between the grooves of the other of the box. Thereby the penetration of optical radiation of each parallelepiped in two adjacent.

Increasing the length of the active element and the synchronization of radiation fields of all parallelepipeds can significantly narrow the directivity laich systems for lasers and extends their scope.

1. The active element of a semiconductor laser with transverse pumping excitation beam, which is a set superiorcasino placed on the General hadproved rectangular parallelepipeds of semiconductor material, two parallel faces of each of which form an optical resonator, excited face them perpendicular, and the resonator faces of all parallelepipeds set parallel to each other, characterized in that the distance between the planes in which lie the excited faces of adjacent parallelepipeds, does not exceed the depth zone of the resonator faces of the parallelepiped, which comes from a laser.

2. The active element of a semiconductor laser with transverse pumping excitation beam, which is a set superiorcasino placed on the General hadproved rectangular parallelepipeds of semiconductor material, two parallel faces of each of which form an optical resonator, excited face them perpendicular, and the resonator faces of all parallelepipeds set parallel to each other, in each of the parallelepipeds with sides excited by a beam faces made equidistant grooves, the depth is the distance between planes, which are excited by the faces of adjacent parallelepipeds, less than the depth zone of the resonator faces of the parallelepiped, which comes from the laser radiation, the parallelepipeds are arranged relative to each other so that the grooves of one of the parallelepipeds are located at half the distance between adjacent grooves of the box.

3. The active element under item 2, characterized in that the groove is filled with absorbent material.

 

Same patents:

Optical device // 2153746

FIELD: electrical engineering.

SUBSTANCE: proposed active element comprises heterostructure built around semiconductor compounds selected from groups A2B6 or A3B5. Active structure is arranged between upper and lower limiting semiconductor layers that make, together with active structure, an optical waveguide. Said active structure comprises at least two alternating superfine semiconductor layers with different refraction factors and at least one active layer arranged between aforesaid two layers that has higher refraction factor than that of alternating layers. Note here that upper and lower limiting layers have higher refraction factor compared with layers of active structure. Thickness h of upper limiting layer satisfies the condition h<x, where x is the depth of electron beam penetration into active structure. Outer surface of upper limiting layer has corrugated relief with direction of corrugations perpendicular to active element optical axis. Note here that relief spacing equals whole number of half-waves of laser radiation in active layer material. Note also that corrugation depth does not exceed height h of upper limiting layer.

EFFECT: higher output power.

3 cl, 4 dwg, 1 ex

FIELD: physics.

SUBSTANCE: holder for depositing optical coatings on sets of strips of light-emitting elements has a base with a window for the support element and has guide clamping elements made in form of prismatic bars whose working planes lie on butt-ends of their cross section; a support element and a locking mechanism. The support element is at an angle (0-45), and dimensions of the cross profile of the clamping element are related to the thickness of the strip of the light-emitting element, the number of strips in a set and the number of sets in the holder by an expression.

EFFECT: broader technological capabilities of the holder for depositing optical coatings, higher quality of products and cost-effectiveness of production.

1 tbl, 5 dwg

Dipole nanolaser // 2391755

FIELD: physics.

SUBSTANCE: dipole nanolaser for generating coherent electromagnetic radiation includes a two-level system in form of a quantum dot and a coherent electromagnetic radiation resonator. The resonator, which has a metal or semiconductor nanoparticle and electrocontact plates, has one more nanoparticle which lies from the said nanoparticle and from the said quantum dot at distances less than wavelength of the coherent electromagnetic radiation generated by the said nanolaser. Both nanoparticles are capable of exciting dipole oscillation modes in antiphase at the frequency of the said coherent electromagnetic radiation.

EFFECT: higher Q-factor of the resonator of the dipole nanolaser.

1 dwg, 1 ex

FIELD: electricity.

SUBSTANCE: resonator has circular section and is made in the form of a revolution solid. The revolution solid comprises an active area, facing layers and a part of a substrate. A generatrix of the side surface of the revolution solid is inclined relative to the normal line of a heterostructures.

EFFECT: possibility to output radiation, which is wideband by wave length, in vertical direction.

2 dwg

FIELD: electricity.

SUBSTANCE: device includes at least one multilayer interference reflector and at least one resonator. In one version of the invention implementation the reflector works as a modulating element controlled by the voltage applied thereto. The stop zone edge is subjected to adjustment using electrooptic methods due to quantum-limited Stark effect in proximity to resonant mode which creates modulation of the reflector transmission factor thus entailing indirect modulation of light intensity. In another version of the invention implementation the optic field profile in the resonator represents the stop zone wavelength shift function, the device working as adjustable wavelength light radiator. In yet another version of the invention implementation at least two periodicities of refraction factor distribution are created in the reflector which enables suppression of parasitic optical modes and promotes high-speed direct modulation of intensity of light emitted by the device.

EFFECT: vertically integrated optoelectronic device serving for high-speed data transfer by way of direct or indirect modulation of emitted light intensity.

11 cl, 34 dwg

FIELD: physics.

SUBSTANCE: semiconductor infrared source includes a semiconductor substrate (1) with two optically connected and geometrically spaced-apart disc resonators (2) or annular resonators (10) in form of a heterostructure. On the surface of the semiconductor substrate (1) lying opposite the surface with the disc resonators (2) or annular resonators (10) there a first ohmic contact (3). A second ohmic contact (8) is deposited on the face of the corresponding disc resonator (2) or annular resonator (10). The distance from the outer edge of the second contact to the inner edge of the resonator is not more than 100 mcm. The disc resonators (2) or annular resonators (10) lie from each other at a distance L or overlap in the region of waveguides at a depth D, said distance and depth satisfying certain relationships.

EFFECT: simple design and reducing optical loss during single-mode oscillation in the middle infrared spectrum.

2 cl, 14 dwg

FIELD: physics, optics.

SUBSTANCE: invention relates to dipolar nanolaser arrays. The device includes a substrate having an active layer, a transparent conducting layer, a transparent dielectric layer and metal nanoparticles-nanoantennae. The nanoantennae are stretched - one dimension exceeds the other two dimensions. Electromagnetic coupling of the emitters of the active layer with the nanoantenna array is provided by selecting optimum distance between the active layer and the nanoantennae. Injection pumping is used to generate radiation.

EFFECT: high efficiency, realising a continuous mode, providing narrow generation lines, small dimensions of the device, high reliability of the device and low pumping power threshold.

5 cl, 1 dwg

FIELD: optics.

SUBSTANCE: semiconductor light-emitting device comprises a white optically transparent body coated with a phosphor on the walls. Inside the housing is a laser diode having an axis of symmetry. Wherein the laser diodes are arranged in series on the axis of symmetry of the light emitting devices so that their axes of symmetry coincide. Ends of laser diodes are connected so that they are in electrical and mechanical contact and form an array of laser diodes, the radiation pattern of which has an axis of symmetry coincident with the axis of symmetry of the light emitting device.

EFFECT: technical result is to provide a semiconductor white light emitting device of high intensity light without increasing the size of light-emitting elements, thus providing uniform illumination of the phosphor.

2 cl, 9 dwg

FIELD: laser engineering.

SUBSTANCE: active element of semiconductor laser with transverse pumping by electron beam comprises rectangular plate from semiconductor material, having first surface, irradiated with electrons, second surface parallel to first, by which it is fixed on substrate, and two side surfaces, forming optical resonator. Plate is multilayer semiconductor heterostructure, having wave-guiding layer, located next to first surface, and passive wave-guiding layer with low coefficient of absorption of radiation generated in optical resonator, arranged between active wave-guiding layer and substrate, wherein passive wave-guiding layer has optical connection with active wave-guiding layer.

EFFECT: technical result consists in increasing of radiation output power with pumping electrons energy reduction.

6 cl, 3 dwg

Polariton laser // 2611087

FIELD: physics.

SUBSTANCE: invention relates to laser equipment. Polariton laser consists of filling material (5), resonator (4), which represents two systems of flat, cylindrical rings made from a semiconductor material and inserted into each other with a variable pitch, quantum wells (6) located at the points of the field maximum value. Device also has on both sides of the area of quantum wells and barrier layers (ontop and under bottom) cylindrical rings, each of which is alloyed with a definite concentration, respectively, of p- and n-type (8), (9) and is connected by nanofilament conductors (1) with the resonator rings having on their surfaces metal-coated contacts to feed pumping current (2), (3). Herewith the area of excitation of exciton polaritons represents a circle perimeter, and the area of condensate polaritons, which the laser radiation comes from, is located inside the circle.

EFFECT: technical result is increasing the laser operating temperature up to the room values and higher.

1 cl, 2 dwg

Up!