(H01L29/786)

H   Electricity(226942)
H01   Basic electric elements(70435)
H01L29/786              (20)

Thin film of low-temperature polycrystalline silicon, method of manufacture of such thin film and transistor made of such thin film // 2642140
FIELD: technological processes.SUBSTANCE: invention provides a method of manufacturing a thin film of low-temperature polycrystalline silicon, comprising the step of growing an amorphous silicon layer, a step of initial growing a silicon oxide layer on the amorphous silicon layer. Then the formation of some set of concave surfaces on silicon oxide layer, which will reflect rays of light vertically projected onto silicon oxide, and last, step of projecting beam of excimer laser on amorphous silicon layer through silicon oxide layer, to convert an amorphous silicon layer into thin film of low-temperature polycrystalline silicon. The present invention also provides a thin film of low-temperature polycrystalline silicon made by the method described above, as well as a low-temperature polycrystalline silicon transistor.EFFECT: when annealing process is executed using an excimer laser for manufacturing thin film of low-temperature polycrystalline silicon, the starting point and direction of recrystallization can be controlled to obtain increased grain size.20 cl, 3 dwg

Switching tft and method of its manufacture // 2634088
FIELD: electricity.SUBSTANCE: invention provides a switching thin-film transistor (TFT), which includes a gate, a drain, a source, a semiconductor layer, and the fourth electrode, the drain being connected to the first signal, the gate being connected to the control signal to control when the TFT is switched on or off, the source outputs the first signal when the TFT is turned on, the fourth electrode and the gate are respectively located on the two sides of the semiconductor layer, and the fourth electrode is conductive and selectively connects to voltages of different levels, wherein the first signal is a control signal, and the source is connected to the tested line scan or data line.EFFECT: reducing the leakage current in the channel of the switching TFT to improve the switching performance when the thin film transistor is turned off.9 cl, 6 dwg

Thin-film transistor of low-temperature polycrystalline silicon and the method of its production // 2634087
FIELD: electricity.SUBSTANCE: thin-film transistor of low-temperature polycrystalline silicon includes, at least, a gate layer, which is a composite insulating layer comprising, at least, three dielectric layers, the density of each dielectric layer being successively increased in the order, in which they are formed in the manufacturing method. Since the relationship between the density of each layer of the composite insulating layer and the density of its other layers is taken into account in accordance with the present invention, each layer in the composite insulating layer of the thin-film transistor of low-temperature polycrystalline silicon made by the method of the present invention has improved surface contact and conductivity properties of the thin film. The film thickness of each layer in the composite insulating layer is also taken into account.EFFECT: parasitic capacitance can be effectively reduced and the transistor trigger speed can be increased, by improving the quality of the film formation of the gate layer, the electrical performance and reliability of the thin-film transistor of low-temperature polycrystalline silicon can be improved.10 cl, 3 dwg

Field-effect transistor and method of manufacturing a field-effect transistor // 2631405
FIELD: electricity.SUBSTANCE: field effect transistor is provided; it comprises a gate electrode for applying a gate voltage, a source electrode, and a drain electrode, both of which are designed to output an electric current, an active layer formed of an n-type oxide semiconductor provided in contact with the source electrode and the drain electrode, and an insulating shutter layer provided between the gate electrode and the active layer. Work function of the electrode and a drain electrode discharge is 4.90 EV or more, and the concentration of charge carriers electrons-oxide n-type semiconductor is 4.0×1017 cm-3 or more.EFFECT: getting field-effect transistor, the source and drain electrodes which have a high resistance to the process of heat treatment and processing in oxidizing atmosphere and have a low resistivity, the transistor does not require a buffer layer.15 cl, 24 dwg, 19 tbl

Field transistor, display element, image display device and system // 2630708
FIELD: electricity.SUBSTANCE: field effect transistor includes a base, a passivation layer, gate insulation layer formed therebetween, a source electrode and a drain electrode which are formed in contact with the gate insulation layer, a semiconductor layer which is formed between at least the source electrode and the drain electrode and it is in contact with the gate insulation layer, the source electrode and the drain electrode, and a gate electrode which is in contact with the gate insulation layer and facing the semiconductor layer and through the gate insulation layer, wherein the passivation layer comprises of the first passivation layer which includes the first composite metal oxide containing Si and alkaline earth metal, and the second passivation layer which is formed in contact with the first passivation layer and contains the second composite metal oxide comprising of alkaline earth metal and rare earth element.EFFECT: production of a highly reliable field transistor.8 cl, 15 dwg

Thin-film transistor, matrix substrate and display panel // 2627934
FIELD: electricity.SUBSTANCE: thin-film transistor TFT includes a gate, a first insulating layer located above the gate, a second insulating layer located above the first insulating layer, a semiconductor layer, a source and a drain, located between the first insulating layer and the second insulating layer, an ohmic contact layer located between the semiconductor layer, the source and the drain, the ohmic contact layer including an opening passing through the ohmic contact layer by means of a gap between the source and the drain in order to open the semiconductor layer, and the second insulating layer is connected to the semiconductor layer through this opening, and a conductive layer located above the second insulating layer. The conductive layer and the gate are electrically connected to each other, so that when the TFT is in the on-state, the switching current generated in the conductive channels of the semiconductor layer is increased. When the TFT is in the off-state, the tripping current generated in the conductive channels is reduced.EFFECT: the ratio of the making current to the tripping current is increased.15 cl, 6 dwg

ethod of producing highly efficient and electrically stable semiconductor layers of metal oxides, layers made using this method, and use thereof // 2601210
FIELD: electronics.SUBSTANCE: this invention relates to a method of semiconductor laminate producing which includes first and second layers of metal oxide, as well as a dielectric layer, wherein the first metal oxide layer is located between the second layer of metal oxide and dielectric layer and has thickness equal to or less than 20 nm. First and second layers of metal oxides are made from the first and second liquid phases respectively. This invention also relates to electronic components which include such semiconductor laminate.EFFECT: invention allows to increase electrical stability of structure layers without reducing the mobility of charge carriers in semiconductor layer.28 cl, 3 dwg, 1 tbl

P-type oxide, producing p-type oxide composition, method of producing p-type oxide, semiconductor device, display device, image reproducing apparatus and system // 2556102
FIELD: chemistry.SUBSTANCE: invention relates to a p-type oxide, a p-type oxide composition, a method of producing a p-type oxide, a semiconductor device, an image reproducing apparatus and a system. The p-type oxide is an amorphous compound and has the following compositional formula: xAO∙yCu2O, where x denotes the molar fraction of AO and y denotes the molar fraction of Cu2O, x and y satisfy the following conditions: 0≤x<100 and x+y=100 and A is anyone of Mg, Ca, Sr and Ba or a mixture containing at least two elements selected from a group consisting of Mg, Ca, Sr and Ba.EFFECT: p-type oxide is produced at a relatively low temperature and in real conditions and can exhibit excellent properties, ie sufficient specific conductivity.11 cl, 36 dwg, 8 tbl, 52 ex

Graphene-based tunnel field effect transistor // 2554694
FIELD: electricity.SUBSTANCE: in a tunnel field effect transistor with an insulated gate containing electrodes of source and drain made of multilayer graphene and located at an insulating substrate in the same plane, and also the gate made of a conducting material and located above the areas of source, tunnel junction and drain, electrodes of source and drain are oriented towards each other crystallographically by an even edge of a zigzag type and separated by a vacuum barrier transparent for charge carriers.EFFECT: invention expands the inventory of tunnel transistor nanodevices; this device alongside its pronounced switching property has on the current-voltage curve of the source and drain electrodes the area with a negative differential resistance, which allows its functioning as the Gunn diode; the device requires lower voltage at the gate.2 dwg

Coating liquid for forming thin metal oxide film, thin metal oxide film, field-effect transistor and method of making field-effect transistor // 2546725
FIELD: chemistry.SUBSTANCE: invention relates to thin metal-oxide films used to make a field-effect transistor. A coating liquid for forming a thin metal oxide film includes an inorganic indium compound, at least one of an inorganic magnesium compound and an inorganic zinc compound, glycolic ether and a diol, wherein the diol is selected from at least one of diethylene glycol, 1,2-propanediol and 1,3-butanediol.EFFECT: invention enables to obtain a thin-film metal oxide coating with the required resistivity using a simple method, a large area, the required shape and with high accuracy.12 cl, 10 dwg, 4 tbl

Semiconductor device and method of its manufacturing // 2503085
FIELD: electricity.SUBSTANCE: semiconductor device comprises a thin-film transistor comprising a gate bus, the first insulating film, an oxide-semiconductor layer in the form of an island, the second insulating film, a source bus, a drain electrode and a passivating film, and also a contact site, comprising the first connection element, made of the same conducting film as the gate bus, the second connecting element made from the same conducting film as the source bus and the drain electrode, and the third connection element formed on the second connection element. The second connection element contacts with the first connection element in the first window provided in the first and second insulating films, the third connection element contacts with the second connection element in the second window provided in the passivating film, and the second connection element covers the end surfaces of the first insulating film and the second insulating film in the first window, but does not cover the end surface of the passivating film in the second window. As a result the conical shape of the contact hole of the contact site may be controlled with high accuracy.EFFECT: reduced damage of a mask.17 cl, 14 dwg

Semiconductor device // 2488191
FIELD: electrical engineering.SUBSTANCE: semiconductor device includes thin-film diode and protection circuit with protective diode. Thin-film diode includes semiconductor layer with the first, second zones and channel zone, gate electrode, the first electrode connected to the first zone and gate electrode and the second electrode connected to the second zone. When conductivity type of thin-film diode is n-type then anode electrode of the protective diode is connected to the line which is connected either to gate electrode or to the first electrode of thin-film diode. When conductivity type of thin-film diode is P-type then cathodic electrode of the protective diode is connected to the line which is connected either to gate electrode or to the first electrode of thin-film diode. Protective circuit does not include other diodes which are connected to the line so that current direction is opposite to the protective diode.EFFECT: deterioration of thin-film diode properties can be decreased when size of the circuit is minimised.12 cl, 37 dwg

Thin-film transistor, shift register, circuit of scan signals bus control, display device and method to tune thin-film transistor // 2471266
FIELD: electricity.SUBSTANCE: thin-film transistor comprises the first capacitor, comprising an area, in which the first electrode of the capacitor connected with an electrode of source, and the second electrode of the capacitor are arranged one on the other in direction of thickness at opposite sides of the first layer of a dielectric, formed between them, the second capacitor, comprising an area, in which the third and fourth electrodes of the capacitor are arranged one above the other in direction of thickness at the opposite sides of the second layer of the dielectric, formed between them, four output buses, stretching from the appropriate electrode of the capacitor in a plane direction, the first connection crossing the second and fourth output buses, when looking in direction of thickness, and the second connection crossing the first and third output buses, when looking in direction of thickness, besides, the second electrode of the capacitor and the gate electrode are connected to each other via the second output bus, the third electrode of the capacitor and the source electrode are not connected to each other, the fourth electrode of the capacitor and the gate electrode are not connected to each other.EFFECT: invention makes it possible to create a thin-film transistor, occurrence of a defect in which may be prevented even in case of leakage in a capacitor connected to a transistor body.37 cl, 13 dwg

ethod of manufacturing of inverter and inverter // 2433504
FIELD: electricity.SUBSTANCE: method of manufacturing of an enhancement/depletion (E/D) inverter having a number of thin-film transistors on the same substrate with channel layers consisting of an oxide semiconductor containing at least one element selected from In, Ga and Zn, involves the stages to form a first transistor and a second transistor; a channel layer thickness of the first and second transistors is mutually different; at least one of the channel layers of the first and second transistors are thermally treated.EFFECT: expansion of the facilities allowing to manufacturer an inverter with oxide semiconductor thin-film transistors of various threshold voltages, simplified method of manufacturing of the inverter with such characteristics, cost reduction.13 cl, 18 dwg

emory element on silicon on glass thin film structure // 2402107
FIELD: physics.SUBSTANCE: in a memory element which comprises a substrate with deposited thin layers of ceric and silicon oxide and metal electrodes for recording and deleting information is made from glass which is pre-cleaned with acetone and isopropyl alcohol, on which a ceric oxide layer is deposited at temperature higher than 600°C and thickness of more than 3 nm and a silicon film with thickness of 50-100 nm.EFFECT: invention prolongs information storage period, simplifies the manufacturing technology and reduces production expenses.4 cl, 4 dwg

Amorphous oxide and field transistor using it // 2402106
FIELD: electricity.SUBSTANCE: amorphous oxide the composition of which changes in direction of the thickness of layer contains the compound the composition of crystal state of which is presented with formula In2-XM3XO3(Zn1-YM2YO)m , where M2 - element of group II with atomic number which is less than that of Zn (for example Mg or Ca), M3 - element of group III with atomic number which is less than that of In (for example B, Al, Ga or Y), x is within the range of 0 to 2, y is within the range of 0 to 1 and m is 0 or natural number which his less than 6, and at that, amorphous oxide has concentration of electron carriers of not less than 1012/cm3 and less than 1018/cm3 and has electron mobility which increases with increase of concentration of electron carriers.EFFECT: amorphous oxide operates as semi-conductor to be used in active layer of transistor.7 cl, 10 dwg

Field-effect transistor using oxide film to transmit information and preparation method thereof // 2400865
FIELD: physics.SUBSTANCE: in a field-effect transistor which includes an oxide film as a semiconductor layer, the oxide film has a channel part, a source part and a drain part, and concentration of one of hydrogen or deuterium in the source part and in the drain part exceeds that in the channel part.EFFECT: invention enables to establish connection between the conducting channel of a transistor and each of sources and drain electrodes, thereby reducing change in parameters of the transistor.9 cl, 13 dwg, 6 ex

Amorphous oxide and field-effect transistor using said oxide // 2399989
FIELD: chemistry.SUBSTANCE: amorphous oxide compound having a composition which, when said compound is in crystalline state, has formula In2-xM3xO3(Zn1-YM2YO)m, where M2 is Mg or Ca, M3 is B, Al, Ga or Y, 0 ≤ X ≤ 2, 0 ≤ Y ≤ 1, and m equals 0 or is a positive integer less than 6, or a mixture of such compounds, where the said amorphous oxide compound also contains one type of element or several elements selected from a group consisting of Li, Na, Mn, Ni, Pd, Cu, Cd, C, N, P, Ti, Zr, V, Ru, Ge, Sn and F, and the said amorphous oxide compound has concentration of electronic carriers between 1015/cm3 and 1018/cm3.EFFECT: amorphous oxide which functions as a semiconductor for use in the active layer of a thin-film transistor.6 cl, 8 dwg

Field transistor // 2390072
FIELD: electricity.SUBSTANCE: in field transistor, comprising active layer and gate-insulating film, active layer comprises a layer of oxide, comprising In, Zn and Ga, amorphous area and crystalline area. At the same time crystalline area is separated from the first surface of interface, which is surface of interface between a layer of oxide and gate-insulating film, distance of 1/2 of active layer thickness or less, and it within the limits of 300 nm from surface of interface between active layer and gate-insulating film or is in point condition in contact with this surface of interface.EFFECT: production of field transistor with high drift mobility.4 cl, 4 dwg, 2 ex

Field transistor with oxide semiconductor material including in and zn // 2371809
FIELD: electrical engineering.SUBSTANCE: proposed invention relates to field transistor with oxide semiconductor material including In and Zn. Atomic composition ratio expressed as In/(In+Zn) makes at least 35 atomic percent and not over 55 atomic percent. With Ga introduced into material, aforesaid atomic composition ratio expressed as Ga/(In+Zn+Ga) makes 30 atomic percents or smaller.EFFECT: improved S-characteristic and drift mobility.9 cl, 25 dwg

Amorphous oxide and field-effect transistor using said oxide // 2369940
FIELD: physics.SUBSTANCE: invention relates to an amorphous oxide, used in the active layer of a field-effect transistor. The amorphous oxide, which contains at least one microcrystal and has concentration of electron carriers from 1012/cm3 to 1018/cm3, contains at least one element, chosen from a group consisting of In, Zn and Sn, and the boundary surface of the grains of the said microcrystal is coated with an amorphous structure.EFFECT: obtaining an amorphous oxide which functions as a semiconductor for use in the active layer of a thin-film transistor.6 cl, 8 dwg

Field transistor // 2358355
FIELD: physics, radio.SUBSTANCE: invention is to find application in microelectronics. Concept of the invention is as follows: the proposed field transistor is composed of a source electrode, a drain electrode, a gate insulator, a gate electrode and an effective layer; the effective layer contains an amorphous oxide with an electronic media concentration less than 1018/cm3 and the electronic mobility increasing proportional to the electronic media concentration. Of the source, drain and gate electrodes at least one is visual light translucent with the current flowing between the source and the drain electrodes never exceeding 10 mA unless there is a voltage applied to the gate electrode.EFFECT: development of a transistor enabling improvement of at least one of the following properties: translucency, thin film transistor electrical properties, gate insulation film properties, leakage current prevention and adhesiveness between the effective layer and the substrate.21 cl, 12 dwg

Field-effect nanotransistor // 2250535
FIELD: nanoelectronics and microelectronics.SUBSTANCE: proposed nanotransistor that can be used in microelectronic and microelectromechanical systems as fast-response amplifier for broadband digital mobile communication means and also for building microprocessors, nanoprocessors, and nanocomputers has semiconductor layer incorporating conducting channel, thin insulator layer disposed on semiconductor surface, gate made on thin insulator surface, drain, and source contacts; semiconductor layer is disposed on bottom insulator layer that covers semiconductor substrate functioning as bottom gate; conducting channel is nano-structured in the form of periodic grid of quantum wires; thin insulator layer encloses each quantum wire of conducting channel on three sides; gate is made in the form of nanometric-width metal strip and encloses each quantum wire of conducting channel on three sides; thin insulator has windows holding drain and source metal contacts connected to channel. Silicon can be used as semiconducting material and thermal silicon dioxide, as insulator.EFFECT: enhanced degree of integration, reduced size, eliminated short-channel effects, enhanced transconductance, radiation resistance, and environmental friendliness of device manufacture.4 cl, 2 dwg
 
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