(H01L27/085)

H   Electricity(226540)
H01   Basic electric elements(70435)
H01L27/085              (2)

Radiation-resistant complementary metal-oxide-semiconductor transistor based element library // 2539869
FIELD: physics.SUBSTANCE: invention relates to microelectronics. An element library based on complementary metal-oxide-semiconductor (MOS) transistors, comprising a p-type substrate and an n-type pocket, n- and p-type MOS transistor active regions, p+ and n+ contacts for the zero potential and supply bus, further includes an extended n+ protection located along the outer boundary of the pocket and which fills the entire free area of the pocket, as well as an annular p+ protection around each of the n-type transistor groups with drain/gate regions of transistors with different potential, which fills the entire free area of the substrate.EFFECT: creating a radiation-resistant element library based on complementary metal-oxide-semiconductor transistors with a smaller area of elements on the chip and faster operation.5 dwg
 
2551376.
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