Basic electric elements (H01)

H   Electricity(222322)
H01            Basic electric elements(69638)
H01C - Resistors(1944)
Antenna // 2607769
FIELD: antenna.SUBSTANCE: antenna (100) includes antenna layer (1), connecting layer (2) and feeder circuit layer (10). Antenna layer (1) includes horn antennae (51-53). Horn antennae (51, 52) are arranged so, that their centers are aligned in direction (C). Horn antenna (53) is arranged so, that horn antenna (53) lies separately from horn antenna (51) in direction (D), and centers of horn antennae (51) and (53) are not aligned in direction (D).EFFECT: waveguide is formed in connecting layer (2).7 cl, 7 dwg
Curable compositions // 2607746
FIELD: chemistry.SUBSTANCE: invention relates to curable compositions of epoxy resin, suitable for making an insulator for a high-voltage gas-insulated switchgear. Invention includes (A) epoxy resin composition containing a mixture of: (A1) at least one solid epoxy resin, (A2) of at least one novolac epoxy resin, and (A3) at least one cycloaliphatic epoxy resin; (B) at least one anhydride hardener; (C) at least one filler; and (D) optionally at least one catalyst or at least one accelerator. Composition has a ratio of epoxy groups to anhydride groups from 1:0.75 to 1:0.85.EFFECT: invention increases mechanical strength and hardness of composition.14 cl, 1 tbl, 3 ex
ethod of making gaas-based photocell // 2607734
FIELD: chemistry.SUBSTANCE: method of making photoelectric converter based on GaAs involves growing by liquid-phase epitaxy on n-GaAs substrate a base layer of n-GaAs doped with tin or tellurium, with thickness of 10–20 mcm and a layer of p-AlxGa1-xAs, doped with zinc, for x = 0.2–0.3 at beginning of growth and x = 0.10–0.15 in surface region of layer, wherein layer of p-AlGaAs is grown carried at temperature 600–730 °C for 20–50 minutes, during this period method includes formation of diffusion p-n junction in GaAs with formation of an emitter layer of p-GaAs with thickness of 1–2 mcm, deposition of back contact by thermal vacuum sputtering, annealing deposited back contact in a hydrogen atmosphere, deposition through a photoresist mask of a front contact by thermal vacuum sputtering and annealing deposited front contact in a hydrogen atmosphere, metallization of front contact by galvanic deposition through a photoresist mask with simultaneous deposition of gold on rear surface, separating etching structure through photoresist mask into separate photocells and application of antireflection coating.EFFECT: invention enables to make photo converters with increased efficiency of conversion of narrow-band, in particular, laser radiation, and can be used in mass production of GaAs photocells.3 cl, 2 dwg, 2 ex
Photoelectric conversion device and imaging system // 2607727
FIELD: photography.SUBSTANCE: photoelectric conversion device has light-receiving elements, arranged on plane of image generation. Light-receiving element include a plurality of portions of photoelectric conversion, built in a first direction parallel to plane of image formation, through insulating portion, and a light guide portion, extending along plurality of portions of photoelectric conversion. In first plane, parallel to plane of image generation and crossing light guide portion, maximum width of light guide portion in first direction is greater than maximum width of light guide portion in second direction, parallel to plane of image generation and orthogonal to first direction.EFFECT: invention can improve accuracy of dividing light into a plurality of portions of photoelectric conversion.11 cl, 10 dwg
Smart card with dual interface and its manufacturing method // 2607725
FIELD: manufacturing technology.SUBSTANCE: present invention relates to a design of a smart card with dual interface and to a method of its production. Disclosed is a group of inventions involving a smart card with dual interface and a method of manufacturing the smart card with dual interface. Peculiar feature of the declared smart card and of the method is that the basic sheet with a compensation sheet are connected by the thermo-compression method to make a pre-laminate, the smart card composition is homogeneous, the material, on which there is a wire antenna, is connected with similar in composition sheet materials at the molecular level.EFFECT: technical result is higher stability of the smart card resistance to changes in ambient temperature.4 cl, 5 dwg
Switch insert of electrical installation switch // 2607703
FIELD: electrical engineering.SUBSTANCE: switch insert of electrical installation switch with formed from first housing part (4) and second housing part (5, 7) switch housing, on which swinging switch lever (43) is rotatably and movably mounted. Swinging switch lever through an actuating protrusion, recessed in switch housing, acts on contact arm (38), there are at least two connecting terminals (19, 25, 31), which are equipped with at least one contact part (20, 32) and support contact arm and are configured for electrical connection with each other by means of contact arm (38), two connection terminals (19, 25, 31) are inserted into pockets of contact chamber on inner side of first housing part (4), on which there is centering rib (16), which locks contact arm (38) in pre-installation position between support (26) contact arm and centering rib (16).EFFECT: preventing switch insert from falling.6 cl, 5 dwg
High-frequency phase shifter on mos-transistors // 2607673
FIELD: radio engineering.SUBSTANCE: invention relates to radio engineering and communication. High-frequency phase shifter is based on the CMOS technology, herewith amplifiers with alternating amplification ratio are based on modified Hilbert cells, and an analogue differential quadrature adder is connected to a quadrature polyphase filter directly. Each modified Hilbert cell consists of ten MOS-transistors. Herewith gates of the first and the fourth MOS-transistors are high-frequency inputs, sources of the first and the second MOS-transistors are connected to the drain of the ninth MOS-transistor, sources of the third and the fourth MOS-transistors are connected to the drain of the tenth MOS-transistor, the source of the ninth and the tenth MOS-transistors is connected to the common unit, gates of the ninth and the tenth MOS-transistors are connected to the first output of the shift voltages source, gates of the second and the third MOS-transistors are connected to the second output of the shift voltages source, drains of the first and the third MOS-transistors are connected to the unit, which is connected to sources of the fifth and the sixth MOS-transistors, drains of the second and the fourth MOS-transistors are connected to the unit, which is connected to sources of the seventh and the eighth MOS-transistors, gates of the fifth and the eighth MOS-transistors and gates of the sixth and the seventh MOS-transistors are control differential inputs, respectively, drains of the fifth and the seventh MOS-transistors and drains of the sixth and the eighth MOS-transistors are connected to two inputs of the load circuit, respectively.EFFECT: high-frequency phase shifter on MOS-transistors with a structure according to the invention has reduced error of phase installation and power consumption, as well as lower cost.1 cl, 3 dwg
Electrolyte mixture for thermal chemical current source // 2607471
FIELD: electrical engineering.SUBSTANCE: invention relates to electrical engineering and can be used in production of thermal chemical current sources. Electrolyte mixture contains, wt%: eutectic mixture LiCl-KCl – 10–40, lithium orthosilicate-orthophosphate – 60–90.EFFECT: high ion conductivity of electrolyte mixture for thermal chemical current source, reduced deformation of electrolyte pellet and its corrosion activity, which improves longevity of current source, is technical result of invention.1 cl, 1 tbl
ethod of producing lithium-iron composite for thermal lithium current source // 2607467
FIELD: electronic equipment.SUBSTANCE: invention can be used in production of thermal lithium current sources. According to invention loading iron with specific surface area of 0.7–2.0 m2/g is performed in lithium melt with temperature of 350–400 °C while stirring is performed until viscous molten state with subsequent maintenance at 650–700 °C during 90 minutes.EFFECT: simplified production of power-hungry lithium-iron composite with high mechanical stability under high temperatures and mechanical loads, as well as increased duration of lithium current source.1 cl
Cable input // 2607465
FIELD: electrical engineering.SUBSTANCE: invention relates to electrical engineering, in particular, to cable inputs, operating in liquid and gaseous media, where tightness and reliability of design are required. Cable input comprises cable (1) in polymer shell, on which metal housing is arranged. Housing is made detachable and consists of two parts (2.3) with inner smooth (4) and threaded (5) cylindrical surfaces. Housing parts are connected by thread with formation of annular closed cavity, in which sealer is arranged between spacer rings with possibility of pressing, made from crude rolled rubber. On side of housing outer ends clamping locking assemblies are arranged.EFFECT: invention enables increasing cable input reliability and tightness of structure at operation under high pressure, manufacturability.1 cl, 1 dwg
onotron microwave generator with matrix field emitter cathode // 2607462
FIELD: electronics.SUBSTANCE: invention relates to electronic equipment, in particular, to miniature electromagnetic oscillations vacuum generators of SHF range short-wave part, for example to monotrons. Monotron microwave generator with matrix field-emission cathode comprises electrons source, single-gap resonator, reflector, insulator, power supply sourses, SHF energy output device. Source of electrons is made in form of group of separate field emission matrices, arranged on common cathode base. In space between second capacitive electrode and reflecting electrode included two-gap resonator with central and third capacitive electrodes, provided with holes for passage of electron flow, arranged coaxially to span holes in single-gap resonator first and second capacitive electrodes. Central capacitive electrode is installed on ceramic substrate, suspended between second and third capacitive electrodes, and connected to two-gap resonator housing by resonator three strip conductors, two of which are located on single-gap resonator second capacitive electrode side and together with the second capacitive electrode forms half-wave resonant circuit, and third strip conductor is on guide on side of two-gap resonator third capacitive electrode and together with said electrode forms quarter-wave resonant circuit. Second capacitive electrode of resonator contains communication holes providing electromagnetic communication between single-gap and two-gap resonators. Single-gap resonator is made with gap by high frequency via locking capacitance, formed between first capacitive electrode side part and resonator housing.EFFECT: technical result is increase in efficiency and output power.6 cl, 7 dwg
ethod of coatings application by plasma spraying and device for its implementation // 2607398
FIELD: technological processes.SUBSTANCE: invention relates to coatings ion-plasma sputtering on items in vacuum method and device for its implementation and can be used in metallurgy, plasma chemistry and machine-building industry. Items are placed inside plasma device comprising target from sputtered material. Performing imposition of configured electric and magnetic fields under conditions of glowing plasma discharge, plasma flow compression and its local focusing in target top center to form local plasma spot within 1 mm2 on its surface. Device includes plasma cell placed inside vacuum chamber and during operation filled with plasma-forming gas. Cell is formed between two parallel arranged plates and comprises aligned cathode, target from sprayed material, anode and focusing electrodes. Cathode is made in form of rod-shaped target holder. Sputtering items are fixed in one of focusing electrodes. Cathode with target is installed inside hollow cylindrical magnet having axial magnetization.EFFECT: result is production of high quality coating while reducing device power consumption.2 cl, 2 dwg
ethod of producing structure // 2607336
FIELD: electronics.SUBSTANCE: invention can be used for creation of high-frequency structures. Core of invention is that method of making structure containing in certain order support substrate, dielectric layer, active layer, made in semiconductor material, so called separation layer of polycrystalline silicon, placed between support substrate and dielectric layer, wherein method involves following steps: step of providing donor substrate made in said semiconductor material; step of making field embrittlement in donor substrate to separate first and second parts of donor substrate on each side of field of embrittlement, wherein first part is intended for forming active layer; stage of provision of support substrate with resistivity above predetermined value; step of forming separating layer on support substrate; step of making dielectric layer on first part of donor substrate and/or on separating layer; stage of assembling donor substrate and support substrate through intermediate link of said dielectric layer and separating layer; stage of cracking donor substrate in area of embrittlement to obtain said structure; stage of reinforcing structure by annealing at least during 10 minutes after cracking; wherein said method is performed so, that polycrystalline silicon of separating layer (20) has completely random orientation of grains in at least part of thickness of separating layer (20), facing support substrate (2), and so that hardening annealing is performed at temperature strictly higher than 950 °C and lower than 1,200 °C.EFFECT: technical result is possibility of creation of high-frequency structures without intermediate processing.16 cl, 4 dwg
icrostrip bandpass filter // 2607303
FIELD: radio.SUBSTANCE: invention relates to microwave equipment and can be used in selective circuits of receiving and transmitting systems. Microstrip bandpass filter comprises dielectric substrate, on one side of which grounded base is applied, and on second are electromagnetically coupled strip conductors are applied: displaced relative to each other elongated wide sections of strip conductors, grounded to base on free ends side, with opposite are connected to each other by means of strip conductors elongated sections, on inner side are connected with elongated narrow strip conductors sections, double-bent at right angle, wherein, along their perimeters, inside of each folded U-shaped sections of strip conductors are arranged, grounded to base on free ends side, on outer side connected with orthogonally arranged elongated wide sections of strip conductors, which are filter ports.EFFECT: invention provides expansion of operating bandwidth and high frequency rejection band, as well as selective properties improving.1 cl, 2 dwg
Diamond detector of ionising radiation // 2607300
FIELD: chemistry.SUBSTANCE: invention relates to semiconductor detectors of ionising radiation, in particular, to diamond detectors, capable of operating at higher temperatures, low pressures, in aggressive media. Diamond detector of ionising radiation consists of a diamond substrate, active diamond layer, two contact electrodes, arranged on top and below active diamond layer, and leads to supply bias voltage and pickup output signal, wherein lower contact electrode is completely inside active diamond layer, wherein leads to supply bias voltage and pickup output signal are made in form of graphite columns within diamond substrate and active diamond layer with output of contact surfaces on lower side of substrate.EFFECT: invention prevents leakage and breakdown of crystal surface, which improves resistance of detector to external factors.1 cl, 2 dwg
ethod of producing composite branch of thermoelement operating in range of temperatures from room to 900 °c // 2607299
FIELD: power engineering.SUBSTANCE: invention relates to thermoelectric energy conversion and can be used during manufacturing of thermoelectric composite thermoelement branches, meant for making electric power generators with high coefficient of conversion. Proposed method of making composite thermoelement branches connection sections of low-, medium- and high-temperature thermoelectric materials includes preliminary application of metal coatings on ends of joined sections, selected from: nickel, indium, iron, molybdenum, tungsten, forming binding layer between sections, installation of all sections in series at increasing operating temperature of butt joint so, that between low and medium temperature sections, as well as between medium- and high-temperature sections binding layers are formed of layer stack Ni/In/N. Assembled mold is placed in plant of spark plasma sintering and heated to temperature of 450–460 °C. It is kept at this temperature for 5–8 minutes at pressure of 3–5 Mpa, in vacuum, until dissolution of boundary part of nickel in molten indium. Then it is cooled to room temperature and isothermal annealing is made in electric furnace with controlled temperature in atmosphere containing 97 % of argon and 3 % of hydrogen, at temperature of 420±2 °C at pressure of 0.5–1.0 MPa for 6–10 hours to produce high-temperature intermetallic compound Ni2In3. After diffusion welding process mold is gradually cooled to room temperature.EFFECT: technical result is reliable and strong connection of sections of composite thermoelement branches.6 cl, 2 dwg, 1 tbl
Device for compensation of thermal expansion of cooling liquid of solid-state laser active member (versions) // 2607269
FIELD: laser engineering.SUBSTANCE: device for compensation of thermal expansion of cooling liquid of solid-state laser active member has inlet, outlet collectors, connected with channels and a circular channel, formed by a tube surrounding the active member. Device is equipped with additional inlet and outlet collectors, connected to channels, which are capillary. Cooling liquid has fixed volume, its level always exceeds connection point of the capillary channels with additional inlet, outlet collectors.EFFECT: technical result is reliable operation of a cooling system of the active member under severe conditions.2 cl, 2 dwg
ultichannel rotary electric connector // 2606976
FIELD: electricity.SUBSTANCE: invention relates to a multichannel rotating electric connector and can include multiple first contacts, which are located radially from each other, and multiple second contacts that enter into electric contact with respective first contacts, wherein there is relative rotation between first and second contacts. Second contacts can be radially spaced from each other. Downhole tool includes one section, which rotates relative to other section of downhole tool, and a multichannel rotary electric connector, which includes multiple contacts of annular shape, which rotate relative to each other. Method of operating downhole tool in underground well includes generation of relative rotation between sections of downhole tool and maintaining multichannel communication by electrical signals between sections, wherein there is relative rotation between sections.EFFECT: improved equipment for reception and transmission of electric signal.18 cl, 10 dwg
Soft magnetic powder // 2606970
FIELD: metallurgy.SUBSTANCE: present invention relates to soft magnetic composite powder material based on iron, suitable for making cores in coils, operating at high frequencies, higher than 2 kHz. Proposed coated composite iron-based powder, which includes a first phosphorus-containing layer and a second layer, comprising a combination of an alkali metal silicate and clay particles, containing specified sheet silicates, is well suitable for compression moulding at high pressures, that enables to obtain parts with high density and with improved magnetic properties. After extraction of moulded component from mould it is heat treated in an atmosphere of nitrogen. Present invention also relates to a method for production of soft magnetic components and a component, operating at high frequencies.EFFECT: high specific resistance of magnetic core and reduced losses on eddy currents is technical result of invention.24 cl, 6 tbl, 6 ex
Lamp // 2606964
FIELD: lighting.SUBSTANCE: invention relates to lighting engineering. Lamp includes a luminous body containing a clamped end and a hollow box-shaped base with contact elements of the luminous body current leads. At least one end of the luminous body is tightly installed into the base and is aligned relative to it in the vertical direction along the longitudinal axis by means of a spring clamp. Said spring clamp is installed in the area of the clamped end of the luminous body with a gap relative to the said current leads.EFFECT: technical result is wider range of equipment.11 cl, 6 dwg
Oxide superconducting wire // 2606959
FIELD: physics.SUBSTANCE: invention relates to oxide superconducting wire for superconducting equipment such as superconducting current-limiting device. Oxide superconducting wire includes: oxide superconducting layered material, which includes substrate, intermediate layer and oxide superconducting layer, in which intermediate layer is formed on main surface of substrate and oxide superconducting layer is formed on interlayer; intermediate reinforcing layer, which includes first intermediate reinforcing layer and second intermediate reinforcing layer and is formed along perimeter of oxide superconducting layered material.EFFECT: invention provides prevention of reduction of superconducting characteristics due to moisture content.6 cl, 1 tbl, 4 dwg
Switch pole element with heat transfer plate // 2606956
FIELD: electricity.SUBSTANCE: invention relates to switch pole element. Switch pole element comprises insulating housing (1) for placement of vacuum circuit breaker insert (5) containing pair of corresponding switching contacts (4, 6), wherein stationary upper electric contact (4) is connected to upper electrical lead (2) formed in insulating housing (1), and movable lower electric contact (6) is connected to insulating housing (1) lower electrical lead (3) by means of electrical conductor (7), which is moved by adjoining pusher (8). Lower electrical lead (3) is connected with circular heat transfer plate (9) located along inner wall or at least partially inside wall of insulating housing (1) and encircling pusher (8) and/or movable lower electric contact (6) far end.EFFECT: capacity to withstand additional temperature increase.12 cl, 11 dwg
Electrical connection secured against rotation, in particular for electrically heatable honeycomb body // 2606954
FIELD: electricity.SUBSTANCE: invention relates to electrical connection (1) for electrical component (2) in exhaust gas system (10) of internal combustion engine (11), wherein exhaust gas system (10) has metal jacket (3) through which electrically insulated by insulating layer (6) by means of feed-through (5) with geometrical central axis (13) passes electrical conductor (4), which has at least one round in cross section (18) external connection section (7) with contact surface (8) for connection with connecting element (14) of supply line (15) or coaxial central axis (13) of feed-through (5) internal or external thread (9). Feed-through (5) or electrical conductor (4) are made so that, at least at connection section (7) or internal or external thread (9) can take up, acting in their peripheral direction, torques of to 3.6 N∙m (newton metre) per cm2 (square centimeter) of contact surface (8), preferably, to 4.5 N∙m/cm2, primarily to 7 N∙m/cm2.EFFECT: preventing damage when dismantling and maintenance.9 cl, 11 dwg
ethod of producing structure of high-temperature superconductor - insulator - high-temperature superconductor // 2606940
FIELD: electrical engineering.SUBSTANCE: invention can be used to create structures of high-temperature superconductor - insulator - high-temperature superconductor. Core of the invention is that a layer of high-temperature superconductor of 123-type faces a flow of nuclear particles, the high-temperature superconductor used is superconductor REBa2Cu3O7, where RE is a rare-earth metal or yttrium.EFFECT: technical result is enabling formation of layers without additional spraying the HTSC, which reduces the cost of production and the probability of the article destruction.3 cl, 1 dwg, 1 ex
Active element of semiconductor laser with transverse pumping by electron beam // 2606925
FIELD: laser engineering.SUBSTANCE: active element of semiconductor laser with transverse pumping by electron beam comprises rectangular plate from semiconductor material, having first surface, irradiated with electrons, second surface parallel to first, by which it is fixed on substrate, and two side surfaces, forming optical resonator. Plate is multilayer semiconductor heterostructure, having wave-guiding layer, located next to first surface, and passive wave-guiding layer with low coefficient of absorption of radiation generated in optical resonator, arranged between active wave-guiding layer and substrate, wherein passive wave-guiding layer has optical connection with active wave-guiding layer.EFFECT: technical result consists in increasing of radiation output power with pumping electrons energy reduction.6 cl, 3 dwg
Silicon epitaxial structure producing method // 2606809
FIELD: electrical engineering.SUBSTANCE: invention relates to semiconductor structures production field and can be used for production of silicon single- or multilayer structures, used in modern microelectronics power devices technology. Summary of invention consists in fact, that during epitaxial structure forming auto doping effect limitation occurs due to successive forming of protective layer part on substrate non-working surface until reaching required thickness half value, epitaxial layer deposition on substrate working surface with thickness of 3–4 mqm, protective layer formation on substrate non-working surface to required thickness and epitaxial layer deposition on substrate working surface to required thickness.EFFECT: using given method enables to increase silicon epitaxial layers parameters homogeneity and, therefore, to increase silicon epitaxial structures production yield.1 cl, 1 dwg
Device and method of making double-sided silicon matrix solar cell // 2606794
FIELD: electricity.SUBSTANCE: invention relates to devices converting electromagnetic radiation energy into electrical energy, in particular, to silicon solar cells and technology of their production. According to the invention in silicic bifacial solar cell made in the form of matrix from subsequently commuted micro-photocells with n+-p-p+ (p+-n-n+)- structure base width of which is comparable with diffusion length of minority charge carriers in base region, and planes of p-n-junctions are perpendicular to working surfaces, working surfaces have insulating passivating chloride film of one of zinc, aluminium, beryllium, tantalum, hafnium, zirconium or thorium metal applied by method of chemical deposition from organic solutions and antireflection coating from polymer silane film applied by method of chemical deposition from organic-substituted low-molecular silanes.EFFECT: invention improves conversion efficiency and efficiency of silicon bifacial matrix solar cell and reduces its cost.2 cl, 1 dwg
ethod of making a semiconductor device // 2606780
FIELD: electricity.SUBSTANCE: invention relates to a technology for production of semiconductor devices, in particular, to production of the gate oxide of a field-effect transistor. Method of making a semiconductor device involves forming a gate oxide from aluminium isoproxide at the temperature of 400 °C, the pressure of 100 Pa and the gas mixture consumption of 250 ml/min, with the rate of growth of the Al2O3 layer of 20 nm/min.EFFECT: invention increases percentage yield of serviceable devices and improves their reliability.1 cl, 1 tbl
Cascade solar battery // 2606756
FIELD: electricity.SUBSTANCE: invention relates to electrical engineering, namely to cascade solar battery. Cascade solar battery is made together with first semiconductor solar battery, wherein first semiconductor solar battery has p-n transition from first material with first array constant, and to second semiconductor solar battery, wherein second semiconductor solar battery has p-n transition from second material with second array constant, and first array constant is less than than second array constant, and cascade solar battery has metamorphic buffer, wherein metamorphic buffer includes sequence of first, lower layer AlInGaAs or AlInGaP, and second, middle layer AlInGaAs or AlInGaP, and third, upper layer AlInGaAs or AlInGaP; and metamorphic buffer is formed between first semiconductor solar battery and second semiconductor solar battery, and metamorphic buffer array constant varies along thickness (in thickness axis) of metamorphic buffer; and wherein between at least two layers of metamorphic buffer array constant and indium content increase, and aluminium content decreases.EFFECT: reduction of residual voltage in solar battery, as well as improvement of its efficiency is technical result of invention.14 cl, 7 dwg
ethod of changing direction and reduction of divergence of radiation of semiconductor vertically emitting laser // 2606702
FIELD: physics.SUBSTANCE: method of changing direction and reduction of divergence of radiation of semiconductor vertically emitting laser involves measurement of VCSEL beam pattern. Radiation model is used for simulation of diffraction grating to provide required turn of radiation and propagation diagram. Based on model diffraction grating is made. Diffraction grating and emitter crystal are heated. Diffraction grating is placed and glued to emitter crystal.EFFECT: wider range of methods of changing direction and reduction of divergence of radiation of semiconductor vertically emitting laser.1 cl, 2 dwg
Sensitive element of pressure and temperature transducer // 2606550
FIELD: measuring equipment.SUBSTANCE: invention can be used for production of small-size semiconductor converters of pressure and temperature. This invention consists in that sensitive element of pressure and temperature converter comprises plate of silicon with metal-coated contact pads, switching area and thinned part in form of membrane, on which composite strain gauges are placed, arranged radially and tangentially relative to membrane; thermal resistor, wherein strain gauges and thermal resistor are connected via switching area in bridge circuit, thermal resistor is composite at least of two parts, strain gauges are made at least of two series-connected parts, wherein components of strain gauges are connected to each other and component parts of thermal resistor are connected to each other via switching area, wherein switching areas are alloyed areas with p+ type of conductivity.EFFECT: technical result is design of sensitive element of converter with high sensitivity and reliability.4 cl, 3 dwg
T-circulator // 2606518
FIELD: radio engineering.SUBSTANCE: invention relates to UHF-engineering and can be used in waveguide channels of transmitters, receivers, radar antennae for directional transmission of electromagnetic waves. T-circulator has a symmetrical waveguide T-branch in H-plane, matching metal wedge, three ferrite inserts and a magnetic system. To increase heat and electrical strength of the T-circulator at expansion of the working frequencies band each ferrite insert is made in the form of two trihedral equilateral ferrite prisms, which are installed coaxially on the opposite wide walls of the waveguide T-branch in H-plane, in the areas of circular polarization. Herewith every trihedral equilateral ferrite prism is oriented with one lateral face perpendicular to the plane of symmetry of the waveguide T-branch in H-plane and with one lateral edge towards the matching metal wedge.EFFECT: directed transmission of electromagnetic waves.1 cl, 1 dwg
Peroxide-crosslinked composition for insulation of power cables // 2606500
FIELD: chemistry.SUBSTANCE: invention relates to crosslinkable polymer compositions for production of insulating layer of medium-voltage electric cables. Peroxide-crosslinked composition for insulation of power cables, comprising polyolefin and organic peroxide, additionally includes a copolymer of ethylene with butyl acrylate, ethylene copolymer based on butene, or based on hexene, or based on octene, monomethyl ether of polyethylene glycol, thiodiethylene-bis[3-(3,5-di-tert-butyl-4-hydroxyphenyl)propionate], dialkyl ester of thiodipropionic acid in following content of components, wt%: polyolefin 80.0–93.0, copolymer of ethylene with butyl acrylate 3.0–5.0, ethylene copolymer based on butene, or hexene, or octene 2.5–4.0, monomethyl ether of polyethylene glycol 0.2–1.0, thiodiethylene-bis[3-(3,5-di-tert-butyl-4-hydroxyphenyl)propionate] 0.1–1.0, dialkyl ester of dithiodipropionic acid 0.1–1.0, organic peroxide 1.5–2.5.EFFECT: high frost resistance of insulation composition from minus 21 °C to minus 38 °C is technical result of invention; invention considerably improves operational characteristics, increasing mechanical strength and thermal stability of insulating layer of cable in conditions of harsh climatic zones.1 cl, 2 tbl
Coating with high resistance to corona discharge, as well as method for production thereof // 2606447
FIELD: manufacturing technology.SUBSTANCE: invention relates to coating for polymer insulating material and method for production thereof. Such coatings can be applied both on three-dimensional parts, and on sheet materials such as films and woven materials. Coating contains from 1 to 10 layers and is silica, wherein coating contains main silicate structural unit with organic residues, due to which it can be applied on flexible substrates. Thickness of individual layer in coating varies from 0.1 to 100 mcm, individual layers are obtained by wet chemical method from precursors, which are silane, siloxane and/or silicate, wherein organic residues content inside coating varies from layer to layer, so that inorganic fragments content of Si-0 inside coating increases to outside, i.e. according to distance from substrate.EFFECT: technical result consists in obtaining coatings with improved resistance to corona discharge.8 cl, 1 ex
ethod of power transformer neutral line resistive-thyristor earthing // 2606405
FIELD: electricity.SUBSTANCE: invention relates to power engineering and can be used for power transformers protection of power plants and electric grids substations with rated voltage of 110 kV and above against geo-induced currents in geomagnetic activity periods at space weather perturbations. Method of power transformer neutral line resistive-thyristor earthing through thyristor switch consists in fact, that control pulses are supplied in absence of geomagnetic disturbances, thus providing thyristor switch continuous conductivity, and locked at occurrence of geomagnetic disturbances. To achieve technical result three thyristor keys are connected in-series, each of which is shunted with low-ohmic resistor, controlling geomagnetic field perturbation from by value of neutral line current constant component, and onset of magnetic system one-sided saturation is by occurrence of second harmonic in phase current, comparing neutral line current constant component value with scale of geo-induced currents fixed values corresponding to Kp – geomagnetic perturbation index values scale, and providing control pulses supply to all thyristor keys during periods of calm (Kp<2) and low-disturbing (Kp=2.3) geomagnetic field, and in case of phase current second harmonic exceeding permissible value locking control pulses supply to one thyristor switch in geomagnetic field disturbed state (Kp=4), on two thyristor switches with geomagnetic storm (Kp=5.6), to three thyristor switches with strong geomagnetic storm (Kp>7) and resuming control pulses supply to all thyristor storm after termination of geomagnetic disturbances.EFFECT: expanding range of power transformers, protected against geo-induced currents, and limitation of reactive power losses at increase of geomagnetic disturbances intensity.1 cl, 1 dwg, 1 tbl
ethod of producing printed cables // 2606395
FIELD: electrical engineering.SUBSTANCE: invention relates to electrical engineering, namely to production of printed cables. Proposed is a method of producing printed cables with parallel and rectilinear conductors on an insulating substrate by electrochemical processing comprises the operations of making a multiple billet with forming conductors under the action of process voltage on a length specified by marks on a rolled billet, then the voltage is removed without the billet movement. Herewith a non-processed billet section is left, then the process voltage is switched on again. And from non-processed sections of the billet subsequently during cutting along the outline of the printed cable formed are contact sites or contact tabs.EFFECT: possibility of forming a printed cable with contact sites or contact tabs in a billet roll for their installation in various equipment, that leads to reduction of weight and dimensions of the equipment.4 cl, 3 dwg
Printed cable // 2606392
FIELD: cables.SUBSTANCE: invention relates to flexible printed cables for an intra-unit and inter-unit movable electric wiring. Is achieved by that under a layer of insulation on both side edges of cable there is reinforcement with stripped outer side edge.EFFECT: design of a printed cable, strong during lateral mechanical effects.4 cl, 1 dwg
Electrically conductive cross-linked composition by the peroxide method for high-voltage power cables screens // 2606380
FIELD: chemistry.SUBSTANCE: invention relates to cross-linked by the peroxide method electrically conductive polyolefin compounds for screens of high-voltage power cables. Disclosed is a electrically conductive cross-linked by the peroxide method composition for screens of high-voltage power cables, containing (wt%): polyolefin (49-62), benzopropion acid 3,5-bis(1,1-dimethylethyl)-4-hydroxy-2-[3-[3,5-bis(1,1-dimethyl)-4-hydroxyphenyl]-1-oxo-propyl]hydrazide (0.05–0.20), tetra-bis-methylene-(3-(3,5-di-tert-butyl-4-hydroxyphenyl)propionate) (0.05–0.20), organic peroxide (0.2–1.9), technical carbon with specific volume resistance when contained in a polymer ρ=10±6 Ohm·cm (29–34), technical carbon with specific volume resistance when contained in a polymer ρ=5±3 Ohm·cm (2.5–5), 4,4'-tiabis(6-tert-butyl-m-cresol) (0.05–0.25), zinc stearate (0.15–1.0), polyethylene wax (3-9), high-molecular siloxane (0.5–1.5).EFFECT: technical result – suggested composition has improved mechanical properties and sufficient value of specific volume resistance, at the same time it ensures smoothness of boundary surface of the electrically conductive screen and insulating layer, which allows to improve the operating properties of high-voltage power cables, improve the reliability of power networks, reduce the cost of their maintenance.1 cl, 2 tbl, 5 ex
Laser with resonator q-factor modulation and mode synchronization // 2606348
FIELD: optics.SUBSTANCE: invention relates to laser equipment. Laser with modulation of q-factor and mode synchronization contains in first arm of optical resonator series-arranged first end mirror, acoustic-optical modulator, active element and first auxiliary mirror, and in other arm it contains second auxiliary and end mirrors, nonlinear element installed between them. Wherein modulator in different moments of time operates at two audio frequencies transmitted through additionally introduced electric signals adder from two additionally introduced generators of modulated oscillations synchronized by third generator, setting laser pulse repetition frequency selected in range of (0.1–100) kHz. Value of first audio frequency is determined by parameters of optical resonator to meet laser mode synchronization conditions, and second audio frequency, providing modulation of q-factor of resonator is selected in one and half times higher than first one. Light beam, coming from modulator after diffraction at second frequency, is overlapped by additional diaphragm.EFFECT: technical result consists in opportunity to increase level of modulation.1 cl, 5 dwg
Anechoic chamber // 2606341
FIELD: radio engineering.SUBSTANCE: invention relates to radio engineering, namely, to anechoic chambers (AC) designs, intended for radar targets effective reflective areas (ERA) diagrams measuring. Anechoic chamber, made in enclosed room, in which inner walls, floor and ceiling are lined with radar absorbing material, wherein room longitudinal cross-section is made in form of trapezium with horizontal base. At that, room rear end wall is installed at angle β=(90°-arc tg√ε), where ε is radar absorbent facing material dielectric permittivity.EFFECT: technical result consists in elimination of radio waves mirror reflection from AC rear end wall.1 cl, 1 dwg
Thermoelectric generator in internal combustion engine exhaust gases exhaust system // 2606300
FIELD: engines.SUBSTANCE: invention can be used in automotive internal combustion engines. Thermoelectric generator is arranged in internal combustion engine exhaust gases exhaust system. Thermoelectric generator consists of hot heat exchanger (1) and thermoelectric modules (4) installed on hot heat exchanger (1). Hot heat exchanger (1) has regular polygonal longitudinal shape with lengthwise finning with longitudinal fins (2) variable-length profile. Above thermoelectric modules (4) cold heat exchangers (5) are installed with fluid flow, flowing against direction of exhaust gases flow. Cold heat exchangers (5) are tightly pressed to thermoelectric modules (4) plates and via them are pressed to common hot heat exchanger (1) screwed-in into pressing plates (9) by screws (8) with resilient compensation elements.EFFECT: technical result consists in enabling of temperatures distribution uniformity along heat exchanger length.4 cl, 4 dwg
Thermoelectric element // 2606250
FIELD: electricity.SUBSTANCE: invention relates to thermal electricity. Summary: thermoelectric element has substrate with substrate front side and located opposite substrate front side substrate rear side, first contact, which in form of film is deposited on substrate front side, second contact, which in form of film is deposited on substrate front side, gap between first and second contacts, thermally and electrically separates first and second contacts from each other, and thermoelectrically active film with upper side and bottom side. Shape of gap between first and second contacts is not straight. Contacts and thermoelectric film are connected to each other by side limiting surfaces. Thermoelectrically active film located in gap so, that lower side is adjacent to front side of substrate and one of limiting surfaces is adjacent to first contact, and second of side limiting surfaces is adjacent to second contact.EFFECT: technical result is production of thermoelectric element with high thermal resistance, which requires less semiconductor material.17 cl, 8 dwg
ethod of making a semiconductor device // 2606248
FIELD: technological processes.SUBSTANCE: invention relates to technology of production of semiconductor devices, particularly to production of amorphous silicon α-Si with low density of defects. Method of making semiconductor device according to the invention includes processes of forming source regions, drain, gate, gate isolation layer and a layer of amorphous silicon, wherein the layer of amorphous silicon is made by photodegradation of disilane molecules with the rate of deposition 5.5 nm/s, at the temperature of 400 °C, pressure 1.33 PA at action of laser beam power 140 MJ/min and disilane flow rate – 20 cm3/min.EFFECT: invention increases percentage yield of serviceable devices, improving their quality and reliability.1 cl, 1 tbl
ethod of making semiconductor device // 2606246
FIELD: instrument making.SUBSTANCE: invention relates to technology for production of semiconductor devices, particularly to production of field-effect transistors with high stability of parameters. Disclosed is a method of making semiconductor device, which includes processes of creation of active areas of device and gate dielectric. According to invention, after forming gate dielectric, method includes successively doping oxide with boron ions with energy oxide 55 keV, a dose of 3⋅1013 cm-2 and fluorine ions with energy 55 keV, dose 1⋅1013 cm-2 with subsequent annealing at 900 °C for 15 min in a nitrogen medium.EFFECT: invention provides higher stability, low density of defects, manufacturability, improved parameters, high reliability and percentage yield of non-defective devices.1 cl, 1 tbl
Direct-current contactor with switching option for ac loads and polarity opposite to preferred direction of current // 2606232
FIELD: electricity.SUBSTANCE: invention relates to a direct current contactor with a preferred direction of current flow, having double interruption with two contact points, each of which comprises a fixed contact and a movable contact, wherein movable contacts are arranged on a contact bridge. Direct-current contactor comprises an arc-quenching device for electric arc quenching, as well as a device for blowing configured to blow switching arc, formed in first contact point when contact points open, into arc-quenching device for electric arc quenching, when switching to first direction of current. Near movable contact of first contact point there is a switching plate, contact bridge and switching plate are electrically insulated from each other and switching plate is connected by potential to fixed contact of second contact point.EFFECT: improved switching.9 cl, 3 dwg
ethod of producing metal-doped polyaniline // 2606231
FIELD: chemistry.SUBSTANCE: invention relates to production of polyaniline, doped with a metal, which can be used in electronic engineering for making gas sensors, electrodes of capacitors, etc. Method comprises first preparing a reaction mixture: dissolving oxidising agent in a pure solvent, adding a dopant with concentration 0.1–0.5 mol/dm3. Further, while stirring, adding an aniline monomer in droplets. In obtained reaction mixture is placed a glass substrate. Polymerisation is then carried out for 40–60 hours at 30 °C. During polymerisation polyaniline is deposited on substrate. Dopant used is a metal salt, selected from a group comprising copper chloride (II), zirconium (IV) oxychloride, tin (II) chloride.EFFECT: invention simplifies method of producing polyaniline on a substrate during polymerisation.1 cl, 3 ex
Complex lithium-lanthanum hafnate as luminescent material for conversion of monochromatic laser radiation and method for production thereof // 2606229
FIELD: chemistry.SUBSTANCE: invention relates to novel compounds of sensitised phosphors based on inorganic crystalline compounds, specifically to complex lithium-lanthanum hafnate composition Li7La3-x-y-z-nNdxHoyErzDynHf2O12, where x=2.5⋅10-2-1⋅10-1, y=1.6⋅10-7-4.7⋅10-7, z=1.5⋅10-6, n=1.2⋅10-6-4.7⋅10-6. Also disclosed is a method for production thereof.EFFECT: obtained composition is used as luminescent material for conversion of monochromatic laser radiation at wave length 808 nm into a series of emission lines 2–2,3 mcm, 2,5–2,9 mcm, 3,1–3,35 mcm.2 cl, 3 dwg, 3 ex
Leak-tight socket connector of precision high-temperature vibration-resistant device // 2606212
FIELD: electrical engineering.SUBSTANCE: invention relates to radio and electrical engineering and can be used in instrument making, including for electric circuits switching under conditions of high temperatures. Leak-tight socket connector of precision high-temperature vibration-resistant device comprises ceramic plate with leads, leak-tight embedded into plate body, which is coated with insulating layer from glass, metal ring along ceramic plate outer diameter with applied layer of glass, metal ring along ceramic plate outer diameter with applied layer of glass and leads, made in form of pins from corrosion-resistant metal, have linear expansion factor corresponding to that of ceramics with applied layer of glass, leads are grouped along ceramic plate surface in rows with the same height of pins, pins in row are bent towards row with smaller height of pins, pins ends in place of supplied conductors termination have through hole for crimping and laser welding of lead conductors ends on row with smaller height side, and on metal ring along outer diameter shielding housing is tightly installed on compound.EFFECT: invention enables to increase precision instrument leak-tight socket connector thermal and mechanical resistance, eg for thermocouple temperature measuring device.1 cl, 1 dwg
Ac generator controlling system and method // 2606206
FIELD: electrical engineering.SUBSTANCE: invention relates to electrical engineering and can be used in AC generator output voltage regulation systems used to maintain storage batteries charge (charging). In AC generator control system and method intended for AC generator, there is internal output voltage regulator, which measures and controls charging voltage through internal feedback line. Above system includes the following components: switch on internal feedback line; adjustable voltage source connected with internal output voltage regulator; external feedback line, made with possibility of connection to measure storage battery status directly on storage battery, receiving charging voltage; controller connected so that to receive signal corresponding to storage battery state via external feedback line and in response to it selectively open switch and selectively actuate adjustable voltage source, to selectively change internal output voltage regulator input voltage. This makes inner output voltage regulator respectively change AC generator output voltage so that voltage arriving to storage battery, will have preset value.EFFECT: technical result is enabling control over generator output voltage, used for storage batteries charging, depending on change of storage battery environment, and losses in line between AC generator output and storage battery.20 cl, 4 dwg
Diagnostic technique for electric microheterogeneitiesin semiconductor heterostructures, based on ingan/gan // 2606200
FIELD: electronics.SUBSTANCE: invention relates to microelectronics and can be used for imaging electric microheterogeneities of technological origin: dislocations, pores, precipitates, etc. in semiconductor heterostructures with arbitrary design of active region, grown on Al2O3 substrates. Method of diagnostics of electric microheterogeneities in semiconductor heterostructures, based on InGaN/GaN substrate Al2O3 together with heterostructure and surface of earthed aluminium foil is irradiated by electron beam with energy density from 0.1 to 0.8 J/cm2 and rate of increase of electric field intensity in heterostructure is no lower than 5⋅1013 V/cm⋅s. Limit power density is determined, above which electric discharges and related microdestruction arise in heterostructure. Microdestructions are recorded using optical microscope after multi-pulse radiation dose of not less than 6⋅10-6 Kl/cm2. Size and spatial distribution of electric microheterogeneities are visually indicated in heterostructure.EFFECT: method enables diagnosing in atmospheric air without using complex and expensive equipment on substrates with arbitrary design of active region.1 cl, 4 dwg
 
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