Basic electric elements (H01)

H   Electricity(226540)
H01            Basic electric elements(70435)
H01C - Resistors(1950)

Server cabinet and data centre based on server cabinet // 2642809
FIELD: information technology.SUBSTANCE: server cabinet comprises at least two functional units, a plurality of intra-server antennas and a plurality of inter-server antennas. The functional units are located in a vertical direction with the formation of a server core; the intra-server antennas are located in the vertical direction, located at the side of the server core, and are electrically connected to the corresponding functional units, and the adjacent intra-server antennas are connected in a wireless manner. When transmitting a radio signal within the server cabinet, the intra-server antennas located in the vertical direction form a transmission path. Because the intra-server antennas are located at the side of the server core, the electromagnetic radiation generated by the radio signal during transmission process has a relatively small impact on the functional units.EFFECT: reducing impact of the electromagnetic radiation on various electronic devices and equipment, which increases the service life of electronic devices and equipment and improves the quality of the radio signal transmission.10 cl, 13 dwg
Electrically insulating composition // 2642567
FIELD: cable industry.SUBSTANCE: invention relates to the cable industry, namely to polymer electrical insulating compositions intended for use in cable structures, operated in conditions of increased fire hazard and low temperatures when exposed to diesel fuel and lubricating oils. Electrically insulating composition contains, by weight: copolymer of butylene phthalate and polybutylene glycol with butylenphthalate (50–95) wt % and polybutylene glycol (5–50) wt % – 20–90, polyethylene wax 1–5, high molecular weight polydimethylsiloxane 2–20, additionally contains aluminum hydroxide Al(OH)3 or magnesium hydroxide Mg(OH)2 100–200, copolymer of ethylene with octene, or ethylene with vinyl acetate, or copolymer of butadiene with acrylonitrile, or copolymer of styrene with butadiene 8–60, high-density polyethylene modified with maleic anhydride 2–20.EFFECT: technical result – invention makes it possible to provide a high degree of incombustibility, a lower rate of emission of smoke and hydrogen chloride during combustion in combination with increased resistance to diesel fuel and lubricating oils, as well as resistance to low temperatures.1 cl, 8 tbl, 4 ex

Protective electronic module for hvdc converter // 2642548
FIELD: electricity.SUBSTANCE: electronic module comprises a capacitor, a short-circuit device, a movable portion, a short-circuit portion and a spring element, a short-circuit device is in parallel connected to the capacitor, the short-circuit device comprises a first and a second bus, the movable portion is connected to the first bus, and the short-circuit portion is connected to the second bus, the spring element is located between the movable portion and the short-circuit portion, when the short-circuit current flows through the first bus, the magnetic force between two buses causes the first bus to be repelled from the second bus and moves towards the short-circuit portion.EFFECT: providing the ability to protect the circuit from the discharge of energy originating from the capacitor.10 cl, 3 dwg

Integrated attenuator // 2642538
FIELD: electricity.SUBSTANCE: integrated attenuator contains a differential signal generator, links consisting of parallel controlled metal-nitride-oxide-semiconductor transistor of n and p type, a control unit and a load, in addition, a non-inverting pair of links consisting of n-type and p-type metal-nitride-oxide-semiconductor transistor is connected to the differential signal generator and the load directly, and an inverting pair of links consisting of metal-nitride-oxide-semiconductor transistor of n- and p-type is connected to the differential signal generator and the load crosswise; where the resistance of the metal-nitride-oxide-semiconductor transistors entering the links is controlled by the control unit, while the resistance of one pair of metal-nitride-oxide-semiconductor transistor links increases and the other drops.EFFECT: providing the possibility of expanding the functionality of attenuators made with CMOS technology, reducing losses in direct signal passage, increasing the dynamic range, expanding the bandwidth of operating frequencies, reducing phase distortions when switching attenuation levels.2 dwg, 1 tbl

ultijunction solar cell // 2642524
FIELD: power industry.SUBSTANCE: multijunction solar cell includes the first sub-element consisting of a compound of InGaAs. The first sub-element has the first lattice constant, and the second sub-element with the second lattice constant. The first lattice constant at least by 0.008Ǻ larger than the second lattice constant and, in addition, a metamorphic buffer is provided that is made between the first and the second sub-elements. The buffer contains a sequence of at least three layers, the lattice constant of this sequence increases toward the first sub-element. The constant lattice layers of the buffer are larger than the second lattice constant, one layer of the buffer has the third lattice constant that is greater than the first lattice constant. Between the metamorphic buffer and the first sub-element, N compensating layers are made to compensate the residual voltage of the metamorphic buffer. The lattice constant of the corresponding compensating layers is smaller than the first lattice constant by an amount ΔAN>0.0008Ǻ, and the compensating layers have an indium content of more than 1%, and the thicknesses of the N number of the compensating layers are selected from a certain ratio.EFFECT: increase in the efficiency of the multijunction solar cell.17 cl, 6 dwg
ethod of forming elliptical direction diagram for active phased antenna array // 2642515
FIELD: radio engineering, communication.SUBSTANCE: method of forming elliptical direction diagram for an active phased antenna array containing delay lines, and the delay lines in the antenna are configured in such a way that the reception and transmission are carried out by electromagnetic radiation converging at the focus of the ellipsoid.EFFECT: possibility of forming an elliptical direction diagram with the possibility of changing the parameters of APAA to determine the azimuth, the tilt angle and the distance to the target.2 dwg

ulti-beam antenna // 2642512
FIELD: antenna technology.SUBSTANCE: invention relates to telecommunication multi-beam antenna systems with a focal device consisting of a two-dimensional array of irradiators, in which a plurality of beams are simultaneously generated by setting the amplitude-time parameters of the signals for each illuminator. Multi-beam antenna, in which the focusing device in the form of amplifying lens (6) is irradiated by irradiating device (1), which is designed as two-dimensional array of irradiators (2). System of beam formation for each active beam forms, with the help of a certain subarray of irradiators, nonplanar wave front (5b) equidistant to plane wave front (5a) in a given beam direction. In this case, the radiating surface of the array of irradiators is outside self-intersection zone of nonplanar wave fronts (5d), and refractive surface (9) of the amplifying lens has a continuous second derivative. In this case, the refractive surface of the lens can be a surface of revolution, with an axis of rotation that does not coincide in angle and (or) position with the axes of the amplifying lens and (or) the irradiating device. In addition, the refractive surface can be formed by drawing one, in a generally variable, curve along the other guiding curve.EFFECT: technical result consists in providing the possibility of obtaining a large number of active rays.4 cl, 4 dwg

ethod for producing high-coercivity magnets from alloys on basis of nd-fe-b // 2642508
FIELD: metallurgy.SUBSTANCE: invention can be used for production of high-energy permanent magnets based on rare-earth-alloys (rare earth metals), and alloys, in particular, based on neodymium, iron and boron (Nd-Fe-B alloy). The method for production of high-coercive magnets from Nd-Fe-B-based alloys includes crushing the base alloy, mixing the alloy and an additive for correction of alloy composition, pressing a mixture of powders in magnetic field, sintering the blank and cooling. The additive for correction of alloy composition is hydrides of rare-earth metals-Fe, and sintering of magnet is carried out in vacuum or at residual pressure for 1-2 h.EFFECT: invention makes it possible to increase coercive force and residual induction of produced magnets.2 cl, 2 dwg

Ring single-wave vibrator // 2642504
FIELD: radio engineering, communication.SUBSTANCE: in the plane of the wave polarization, blades made of thin metal tape are set from the outer and inner sides of the ring single-wave vibrator. In the node of the standing wave of the electric field at the exit of the ring vibrator in the plane of the wave polarization, one blade from a thin metal tape is set from the outer sides of the ring single-wave vibrator, and the ring single-wave vibrator is tuned to the impedance of the coaxial cable connected thereto by changing the distance between the inner blades from the thin metal tape placed in antinodes of the standing wave of the electric field of the ring single-wave vibrator.EFFECT: increasing the electric field strength at the receiving point and expanding the passband in the antinodes of the standing wave of the electric ring vibrator field.4 dwg

Stranded cable and method of manufacturing stranded cables // 2642498
FIELD: electricity.SUBSTANCE: invention relates to a stranded cable (2) used, for example, in the automobile industry, including single wires (4, 6). Several identically executed single wires (4) are arranged as outer wires (4) around one central inner wire (6), and single wires (4, 6) are forming a complex that is surrounded by insulation (12). The outer wires (4) are non-pressed and have a non-circular cross-section, so that the size of the outer wires (4) - when viewed in cross section - increases from the inner wire (6) radially outside, and the mentioned complex of single wires (4, 6) is not pressed, so that it has a high ultimate strength under alternating bending.EFFECT: cable provides a high ultimate strength for alternating bending.15 cl, 3 dwg
agnetoelectric current-voltage transducer with frequency doubling // 2642497
FIELD: electricity.SUBSTANCE: transducer is a structure of a capacitor, the plates of which are made of magnetostrictive metal and mechanically connected to a piezoelectric plate inside and to an inductance coil wound on it, and of a magnetic core, made in the form of two U-shaped plates closely adjacent to the magnetostrictive plates, that ensures the magnetic flux closure. The input signal is the current of the inductance coil, and the output signal is taken from the capacitor plates.EFFECT: to ensure the transducer's operation, it is not required to create a bias field, and it contains a magnetic core that ensures the magnetic flux closure, which leads to a reduction in energy losses.1 dwg
ethod of increase of threshold barrier voltage of gan transistor // 2642495
FIELD: electricity.SUBSTANCE: method of increasing the threshold barrier voltage of a transistor based on gallium nitride (GaN), which includes creating gate p-GaN mesa on the surface of the silicon wafer with epitaxial heterostructure of GaN/AlGaN/GaN type, inter-instrument mesa-isolation, forming ohmic contacts to the areas of the transistor drain and source, forming a two-layer resistive mask by lithographic methods, cleaning of the surface of the semiconductor, deposition of thin films of gate metallization, removing of the plate from the vacuum chamber of the evaporator, removal of the resistive mask, prior to the evaporation of thin films of gate metallization the plate is subjected to treatment in an atmosphere of atomic hydrogen for t=10-60 seconds at a temperature of t=20-150°C and flow density of hydrogen atoms on the surface of the plate, equal to 1013-1016 at. cm-2 c-1.EFFECT: increase in the threshold barrier voltage of the GaN transistor when applying barrier metal films to the p-GaN gate area with a high electronic work function.5 cl, 3 dwg

Radical transferring unit and method // 2642494
FIELD: chemistry.SUBSTANCE: unit includes a plasma generator and a guide body. The plasma generator includes a chamber (2), in which a plasma can be formed. The chamber has an inlet (5) for receiving the introduced gas and one or more outlets (6) for removing, at least, one of the plasma and the radicals created therein. The guide body is hollow and configured to direct the radicals formed in the plasma to a region or volume, in which the deposition of contamination is to be removed. The chamber inlet is connected to a pressure device (40) to provide pulsating pressure in the chamber so as to create a flow in the guide body.EFFECT: increasing the removal efficiency of contaminants.21 cl, 13 dwg

Solar battery // 2642487
FIELD: electricity.SUBSTANCE: in the battery, the support panel consists of face and rear covers which are made of perforated resilient material and which are connected to each other by stiffening plates also made of resilient material; solar cells with an optically transparent protective plate and a protective plate on the back side pasted on each of them tc of the front side are glued to the front panel skin, the perforation windows are made and the stiffening plates are placed in accordance with the solar cells sizes with the step corresponding to the step of the arrangement solar cells. Holes in the walls of the stiffening plates are made for simplification and/or for the cabling inside the battery.EFFECT: enhancement of specific performances due to the solar battery weight reduction, degradation decrease of the electrical characteristics during the process of exploitation, reducing the size of panels and packs of panels in the folded state.1 dwg,1 ex

Radar scanning method // 2642453
FIELD: radio engineering, communication.SUBSTANCE: in radar scanning method consisting in electronic and mechanical scanning by the phased array antenna beam with respect to the elevation angle and the azimuth in mechanical direction, change the scanning electron plane of the phased array antenna (FAA) by rotating or rocking of the FAA about the axis perpendicular to its plane, with the possibility to provide electronic scanning by FAA beam in the azimuth-angle sector for radar stations with one-dimensional electronic scanning when the rotation or rocking of the antenna in the azimuth plane is stopped.EFFECT: providing electronic scanning by the phased array antenna beam in the azimuth-angle sector for radar stations with one-dimensional electronic scanning when the rotation of the antenna is stopped in the azimuth plane.1 dwg
ethod of synthesis of active component of cathode mass based on lifepo4 and cathode mass, containing active component // 2642425
FIELD: electricity.SUBSTANCE: invention relates to cathode mass containing an active component based on LiFePO4. Cathode mass contains the active component based on LiFePO4, organic binder, organic stabilizing additive and salt of lithium, with the following component ratio, mass. %: LiFePO4 - 70-80; organic binder - 10-15; organic stabilizing additive - 5-10; the lithium salt - 5-10.EFFECT: invention makes it possible to increase the reversible capacitance and electrical resistivity, to reduce the specific capacitance of the cathode mass.4 cl, 1 tbl
Device for generation of plasma from gas medium by means of electron-cyclotron resonance (ecr) with high range along one axis // 2642424
FIELD: electricity.SUBSTANCE: device contains at least two coaxial wave guides (4), each of which is formed from the central conductor (1) and the external conductor (2) to direct microwave waves in processing camera. At least two electromagnetic waveguides (4) are connected to the magnetic circuit (21-22), elongated in one direction, while the specified magnetic circuit surrounds waveguides, creating a magnetic field that can reach a State of ECR near these waveguides.EFFECT: increasing the uniformity of plasma directed to the substrate under processing.9 cl, 1 tbl, 9 dwg

Electric multicore cable // 2642419
FIELD: electricity.SUBSTANCE: electric multicore cable refers to electrical engineering and designed for industrial data networks, control stations, signalling, etc. In electrical multicore cable, containing a core of twisted copper or copper tinplated conductors covered with insulation, or of twisted concentric layers, in turn, twisted in pairs, threes or fours of copper or copper tinplated conductors covered with insulation, on top of which wrapping, collective screen and protective covering are consistently imposed, and inner covering is superimposed between the collective screen and protective covering, the collective screen is executed in the form of a winding of alumopolymer tape with contact multiwire tinplated copper conductor or as braiding of copper wires, or tinplated copper wires with coefficient of surface density not less than 75%, or in the form of a winding of alumopolymer tape, or combined material based on aluminium foil.EFFECT: increase the cable resistance to aggressive environments, as well as its noise immunity.24 cl, 4 dwg

Fixing element for sensor current // 2642390
FIELD: electricity.SUBSTANCE: fixing element has a locking device, as well as a flange area for mounting the current sensor in an upright position on the mounting surface. Flange area has supporting surface and/or the anchor bar, which lie in the first plane, fixing element also has a clamping surface on which the locking device is moulded. The clamping surface lies in the second plane, and these two planes have a common crossing angle (α), which is more than 90.25°.EFFECT: increase the reliability of fastening.15 cl, 16 dwg

Coating plasma-arc device // 2642237
FIELD: electricity.SUBSTANCE: invention can be effectively used in the formation of protective and biocompatible layers of dental and orthopaedic implants, in the manufacture of electrolytic cell technological layers of thin-film integral accumulators and in chemical reactors, which operate in aggressive media and at high temperatures. There is the cathode (3), anode (4), encircling it, and the shielding electrode (5) of the cathode assembly (2) are axially symmetric in the vacuum chamber (1) with a vertically disposed longitudinal axis O-O1. The device also comprises of a magnetic system, a substrate (22) holder (21) and a power supply source (25. The cathode (3) is made of a current-conducting material, and the shielding electrode (5) is located between the cathode (3) and the anode (4). The magnetic system consists of sequentially placed first electromagnetic coil (10) with an end surface (11) in the plane perpendicular to the longitudinal axis O-O1 of the chamber (1) and the second electromagnetic coil (15). The power supply source (25) is connected to the anode (4) and the cathode (3), so that an electric arc arises between them. The cathode assembly (2) is provided with the first drive mechanism (30) with the first power unit (42) and the second drive mechanism (33). The cathode (3) is installed in the chamber (1) with its working surface (35) being in the plane perpendicular to the longitudinal axis O-O1 of the chamber and adapted to move along the longitudinal axis O-O1 of the chamber by the first drive mechanism to provide alignment of the disposition plane of the working surface (35) of the cathode (3) with the disposition plane of the end surface (11) of the first electromagnetic coil (10) and with the cathode (3) being rotatable around the longitudinal axis O-O1 of the chamber through the second drive mechanism (33).EFFECT: invention allows you to save the optimum conditions of the cathode position in relation to magnetic fields, that makes the coating process controlled and the coating characteristics stable.8 cl, 4 dwg
Tandem- structure of two-channel infrared radiation detector // 2642181
FIELD: physics.SUBSTANCE: two-channel infrared radiation detector contains a thin-film structure of the photo-galvanic elements based on lead selenide, provided with optical filters. The thin-film structure includes two photo-galvanic elements made on separate substrates and disposed coaxially with the optical filters in the form of a tandem-structure, wherein the photosensitive areas of the elements are combined in the plan, and the current-carrying electrodes of the elements are mutually perpendicular.EFFECT: increasing the effective photosensitive area of the two-channel infrared radiation detector.2 cl, 1 tbl, 5 dwg

Flexibly wrapped crystal of integrated circuit // 2642170
FIELD: physics.SUBSTANCE: device based on the flexibly wrapped crystal of the integrated circuit comprises a substrate and a flexible crystal of an integrated circuit connected to the substrate in a substantially vertical orientation with respect to the substrate surface.EFFECT: ensuring the possibility of improved heat removal and preservation of compactness.25 cl, 8 dwg

System of temperature perception for power electronic device // 2642146
FIELD: electricity.SUBSTANCE: power electronic device comprises a housing, a conductive element disposed within the housing and capable of withstanding at least an average voltage, a cooling system which is in fluid interaction with the conductive element, a plurality of temperature sensing markers, and a data acquisition unit having a receiver which is configured to receive signals from the antennas of temperature sensing markers. The cooling system has a plurality of exhaust pipe elements which are disposed within the housing. Each of the markers can be attached to one of the exhaust pipes and can include a power source, a temperature sensor and an antenna.EFFECT: increase in information reliability on thermal overloads.9 cl, 3 dwg

Thin film of low-temperature polycrystalline silicon, method of manufacture of such thin film and transistor made of such thin film // 2642140
FIELD: technological processes.SUBSTANCE: invention provides a method of manufacturing a thin film of low-temperature polycrystalline silicon, comprising the step of growing an amorphous silicon layer, a step of initial growing a silicon oxide layer on the amorphous silicon layer. Then the formation of some set of concave surfaces on silicon oxide layer, which will reflect rays of light vertically projected onto silicon oxide, and last, step of projecting beam of excimer laser on amorphous silicon layer through silicon oxide layer, to convert an amorphous silicon layer into thin film of low-temperature polycrystalline silicon. The present invention also provides a thin film of low-temperature polycrystalline silicon made by the method described above, as well as a low-temperature polycrystalline silicon transistor.EFFECT: when annealing process is executed using an excimer laser for manufacturing thin film of low-temperature polycrystalline silicon, the starting point and direction of recrystallization can be controlled to obtain increased grain size.20 cl, 3 dwg

Block of lithium-ion batteries for accumulator batteries // 2642136
FIELD: electricity.SUBSTANCE: block of lithium-ion batteries for accumulator batteries comprises a housing, battery cells that are installed in parallel within the housing, wherein the housing is made of a homogeneous composition containing the following component ratio, %: heat-conducting plastic - 93, heat-absorbing components with a variable phase - 5, flame retardants - 2.EFFECT: invention allows to increase the efficiency of passive cooling and to ensure the explosion-fire safety of the block of lithium-ion battery.3 cl, 1 dwg

Optoelectronic device // 2642132
FIELD: physics.SUBSTANCE: optoelectronic device contains an emitter and a photodetector positioned in one plane at a certain distance from each other, ohmic contacts, wherein the emitter and the photodetector are made of consistently grown heteroepitaxial layers of dielectric and nanocrystalline silicon in the silicon substrate, and each silicon layer consists of p- and n-type sections with the sharp section borders.EFFECT: optoelectronic device according to the invention has a monolithic and small-sized structure, more reliable and less expensive.3 dwg

Improved disc cell for several semiconductor elements contacting through clamping // 2642117
FIELD: electricity.SUBSTANCE: invention relates to a disc cell (1) for pressed contact of several semiconductor elements by means of clamping means (4, 13), which create a clamping force (F), including: a housing (2, 3, 7, 8); at least one first semiconductor element (6) of the first design type installed in the housing; at least one second semiconductor element (5) of the second type, different from the first, installed in the housing. The housing (2, 3, 7, 8) includes at least one metal pressure plate (2) for clamping the first and second semiconductor element and covering the first (6) and second (5) semiconductor elements, oriented at a substantially right angle to the clamping force (F). The pressure plate (2) is designed in such a way that the clamping force (F) acts on it with a local constraint (9) for clamping the first (6) and second (5) semiconductor element by the pressure plate (2). The first semiconductor element (6) is located under the local clamping force (F) impact area (9), and the second semiconductor element (5) is located at least partially outside the local impact area (9).EFFECT: invention provides a high degree of integration and simplification of the adjustment of the clamping.17 cl, 3 dwg

ulticomponent cover for dismountable connectors // 2641892
FIELD: electricity.SUBSTANCE: multipart cover for the dismountable connector contains several elements that are lapped together or by interference fit. These several elements include a casing segment located between the cable entry segment and the segment of the interface sleeve. The cable entry segment contains a channel that extends axially through the cable entry segment and has a size. The segment of the interface sleeve comprises a part intended for the cable lug with another channel, the size of which allows for the reception of a part of the insulating inner casing and part of the conductive insert for receiving the clamping cable lug. The casing segment comprises another channel extending axially from the first end of the casing segment to the second end of the casing segment.EFFECT: possibility of receiving an isolated power cable.20 cl, 7 dwg

Autonomous signal-start firefighting system // 2641886
FIELD: fire safety.SUBSTANCE: autonomous signal-start firefighting system contains a series-connected thermal starter 1, a current source 2 with a pyrotechnic activator 3, a time relay 4, a signal device 5, an actuator 6, a housing 7, a rod 8, a compression spring 9, an end portion 10 of a springed rod 8, a heat sensitive clamp 11, a solenoid 12, a central axial channel 13, terminals 14, an incandescent bridge 15, a weighed portion of initiating substance 16, an end portion 17 of a springed rod 8, an edge spear 18, a capsule 19, a sealed casing 20, solid stick 21, electrical outputs 22. The transmitter comprises a master oscillator 23, n is a drop-out delay line 24.i (i = 1, 2, …, n), a phase-inverter 25.j (j = 1, 2, …, m), an adder 26, a power amplifier 27, and a transmitting antenna 28. The receiver includes a receiving antenna 29, a high frequency amplifier 30, mixers 31 and 47, a sawtooth voltage generator 32, heterodynes 33 and 46, intermediate frequency amplifiers 34 and 48, a FM signal detector 35, spectrum analyzers 36 and 38, phase doubler 37, comparison block 39, threshold blocks 40 and 50, delay lines 41 and 44, switches 42 and 51, a phase detector 43, a registration block 45, a correlator 49, a narrowband filter 52, phase-inverter circuits 53, 56 and 59, adders 54, 57 and 60, bandpass filters 55 and 58.EFFECT: increase selectivity and noise immunity of the receiver by suppressing false signals received through the forward channel and intermodulation channels.9 dwg
Thermoelectric semiconductor device for neck-collar zone massage // 2641850
FIELD: medicine.SUBSTANCE: thermoelectric semiconductor device for massage of the neck-collar zone contains a flexible elastically deformable base with the possibility of covering the neck-collar zone. The base is made in the form of an elastic interlayer, on which thermoelectric modules (TEM) are fixed. The working junctions of the TEM are in thermal contact with the high-conductivity gel layer containing the thermal sensor, and the support junctions - with the aluminium plates contacting the heat-conducting support blocks including a box. The box is made of a material with low thermal conductivity. In the box cavity, there is a working substance with a high heat of fusion and a melting point in the range 40-50°C, bounded on the inside by aluminium plates. Elastic interlayer contains ferromagnetic needle elements located between each adjacent pair of TEM. Magnetic action in the device is created by wires surrounding each ferromagnetic needle element with the opposite direction of winding at adjacent ferromagnetic needle elements feeding the corresponding TEM. Fastening of TEM and ferromagnetic needle elements on the elastic interlayer is performed taking into account exclusion of influence on the area of the spinal column.EFFECT: combination of the function of alternating heating and cooling massage applicators in a single device, with a possibility of creation of a temperature regime and a magnetic exposure mode.1 dwg
Thermoelectric semiconductor device for neck-collar zone massage // 2641849
FIELD: medicine.SUBSTANCE: thermoelectric semiconductor device for massage of the neck-collar zone contains a flexible elastically deformable base with the possibility of covering the neck-collar zone. The base is made in the form of an elastic interlayer, on which thermoelectric modules (TEM) are fixed. The working junctions of the TEMs are in thermal contact with the high-conductivity gel layer containing the thermal sensor, and the reference junctions - with the air cooler. Elastic interlayer contains ferromagnetic needle elements located between each adjacent pair of TEM. Magnetic action in the device is created by wires surrounding each ferromagnetic needle element with the opposite direction of winding at adjacent ferromagnetic needle elements feeding the corresponding TEM. Fastening of TEM and ferromagnetic needle elements on the elastic interlayer is performed taking into account exclusion of influence on the area of the spinal column.EFFECT: combination of the function of alternating heating and cooling massage applicators in a single device, with a possibility of creation of a temperature regime and a magnetic exposure mode.1 dwg
Thermoelectric semiconductor device for neck-collar zone massage // 2641848
FIELD: medicine.SUBSTANCE: thermoelectric semiconductor device for neck-collar zone massage contains a flexible poroelastic base with an ability to fit the neck and collar zone. The base is made in the form of an elastic interlayer, on which thermoelectric modules (TEM) are fixed. The working junctions of the TEMs are in thermal contact with the high-conductivity gel layer containing the thermal sensor, and the reference junctions - with the air cooler. The elastic interlayer contains ferromagnetic needle elements located between each adjacent pair of TEMs. Magnetic action in the device is created by wires surrounding each ferromagnetic needle element with the opposite direction of winding at adjacent ferromagnetic needle elements feeding the corresponding TEM. Fastening of TEM and ferromagnetic needle elements on the elastic interlayer is performed taking into account exclusion of influence on the area of the spinal column.EFFECT: combined function of alternating heating and cooling massage applicators in a single device, with a possibility to create a temperature regime, a magnet exposure regime and mechanical massage with vibration function.1 dwg
Thermoelectric semiconductor device for neck-collar zone massage // 2641847
FIELD: medicine.SUBSTANCE: thermoelectric semiconductor device for massage of the neck-collar zone contains a flexible elastically deformable base with the possibility of covering the neck-collar zone. The base is made in the form of an elastic interlayer, on which thermoelectric modules (TEM) are fixed. The working junctions of the TEM are in thermal contact with the high-conductivity gel layer containing the thermal sensor, and the support junctions - with the aluminium plates contacting the heat-conducting support blocks including a box. The box is made of a material with low thermal conductivity. In the box cavity, there is a working substance with a high heat of fusion and a melting point in the range 40-50°C, bounded on the inside by aluminium plates. The elastic interlayer contains ferromagnetic needle elements located between each adjacent pair of TEMs. Magnetic action in the device is created by wires surrounding each ferromagnetic needle element with the opposite direction of winding at adjacent ferromagnetic needle elements feeding the corresponding TEM. Fastening of TEM and ferromagnetic needle elements on the elastic interlayer is performed taking into account exclusion of influence on the area of the spinal column.EFFECT: combined function of alternating heating and cooling massage applicators in a single device, with a possibility to create a temperature regime, a magnet exposure regime and mechanical massage with vibration function.1 dwg
ethod for growing alumino-yttrium garnet doped with vanadium // 2641828
FIELD: chemistry.SUBSTANCE: invention relates to a technology for the production of single-crystal materials for laser technology designed to modulate the quality of laser radiation (passive laser shutters - PLS). The method of growing alyumo-ittrium garnet doped with vanadium (AIG:V) is growing a crystal by the method of vertical directional solidification in a molybdenum crucible in a reducing atmosphere of argon with hydrogen, wherein the initial mixture further contains metallic chromium, the composition of the sample is determined from the general formula Y3(Al(1-0.01x)V0.03x/5Cr0.02x/5)5O12, where x is the concentration of vanadium in the octahedral and tetrahedral positions of the crystal lattice and is from 1 to 7 at. %. The result of the invention consists in reducing the concentration of the phase inclusions of molybdenum (a crucible material) of less than or equal to 10 mcm in the grown crystal AIG: V with a vanadium concentration greater than or equal to 3⋅1020 cm-3 up to the values that do not affect the optical quality of the PLS. The PLS based on the crystals AIG: V with a vanadium concentration of ≥3⋅1020 cm-3 provide Q-switching in the wavelength range of 1.02-1.45 mcm.EFFECT: improvement of the method, improvement of the properties of the crystals.2 dwg, 1 tbl

ixtures, methods and compositions related to conducting materials // 2641739
FIELD: chemistry.SUBSTANCE: compositions are materials having an electrically and/or a thermally conductive coating. Mixtures and methods can be used to produce transparent conductive films and other transparent conductive materials. The mixture for preparing the conductive layer comprises a) at least, one alcoholic solvent; b) at least, one ester solvent; c) at least, one cellulose ether solvated therein; and d) metallic nanowires uniformly dispersed in the said mixture, the said, at least, one alcoholic solvent being 60% or more by volume of the said mixture. Specified, at least, one ester solvent is not more than 30% by volume of this mixture, and the specified alcohol solvent selected from the group consisting of methyl alcohol, isopropyl alcohol and mixtures thereof, and the said ester solvent is selected from the group consisting of methyl acetate, ethyl acetate, butyl acetate, and isopropylacetate.EFFECT: improved composition properties.37 cl, 4 tbl

Integral inductivity with extended frequency range // 2641719
FIELD: electricity.SUBSTANCE: integral inductivity with extended frequency range comprises the first (1) and the second (2) terminals, a metal inductor film (3) located between the first (1) and the second (2) inductor terminals, the first (4) and the second (5) sections of the metal screen not connected with each other, located under the metal inductor film (3) and not having electrical contact with it, the first (6) and the second (7) broadband amplifiers. Nnoninverting current amplifiers with low input and high output impedances are used as the first (6) and the second (7) broadband amplifiers, wherein the input of the first (6) broadband current amplifier is connected with the first (4) section of the metal screen, and its output is connected with the first (1) inductor terminal, the input of the second (7) broadband current amplifier is connected with the second (5) section of the metal screen, and its output is connected with the second (2) inductor terminal.EFFECT: extension of the operating frequency range of the integral inductivity.4 cl, 2 dwg

Clutch mechanism for energy battery device and chain locker with gas insulation for it // 2641712
FIELD: electricity.SUBSTANCE: invention relates to the mechanism of adhesion for energy storage device that contains the load gear (25), leading gear (22), unidirectional bearing, gear and shaft-liner (24), containing the gear-driven part and clutch. The pinion shaft (24) comprises a plurality of cylinders and a pusher, a rotatable bushing and an elastic member disposed in the cavity of the pinion shaft (24). The pusher comprises a pusher slide hole and a pusher connection hole for connection to the pinion shaft (24) and the control sleeve. The clamping unit (26) is attached to the driving gear, the pressing block (26) is configured to depress the pusher to unlock or lock the insert and the pinion shaft.EFFECT: ensuring the possibility of a simple and reliable mechanical separation of the driving force device and the energy storage device.8 cl, 10 dwg

Contact support // 2641708
FIELD: electricity.SUBSTANCE: invention relates to a contact support (1) for placing contact elements and for contacting with a reciprocating contact support. Contact support (1) made of insulating material has lots of cavities (4) to place the contact elements, which are distributed in the direction of the plug connection through all contact support (1), as well as its (3) fastening area and its (2) plug connection area. In accordance with the invention, an introductory skew (8) is provided on the contact support (1), which facilitates contacting the contact support (1) with the return contact support.EFFECT: invention relates to improvements in the field of a plug-in connection for preventing incorrect plug-in connections of two contact supports, in particular the sliding of the contact supports during the plug-in connection process.16 cl, 6 dwg

Contact ring body, contact ring shaft of contact ring body, insulating body of contact ring body and contact ring of contact ring body // 2641670
FIELD: electricity.SUBSTANCE: invention relates to content ring body of contact ring transmitter for transmission of electrical signals between fixed and rotating around the axis of rotation of the part containing at least one contact ring (28) for transmitting one of the electrical signals between the contact ring (28) and at least one sliding on it contact element, in particular brush, and contact ring shaft (8) for attaching at least one contact ring (28). Contact ring shaft (8) has guiding channels (96) distributed on its circumference to accommodate electrical wiring for electric attaching at least one contact ring (28).EFFECT: improved heat distribution.22 cl, 23 dwg

ethod for filling coils and device for its implementation // 2641669
FIELD: electricity.SUBSTANCE: device comprises an outer reservoir (11), a fillable tank (5) for accommodating at least one fillable coil (9) and a device (10) for filling the filling compound. The outer reservoir (11) is fused with an internal reservoir (11) whose material has a Vickers hardness of less than 500 and a melting point from 45 to 200°C. In the method, the formation of the inner reservoir (11) is achieved by mechanical or heat treatment, at least one fillable coil (9) is installed in the fillable tank (5), the filling compound is poured into the remaining hollow space in the filling tank (5), the filling compound solidifies and the filled coil (9) is extracted from the device.EFFECT: simplification of manufacturing.15 cl, 2 dwg

ethod of cycling of lithium-sulfur element // 2641667
FIELD: electricity.SUBSTANCE: method comprises discharging of the lithium-sulfur element, completing the discharge when the element voltage reaches a discharge threshold voltage that is in the range of 1.5 to 2.1 V, charging the lithium-sulfur element and completing charge when the element voltage reaches the charge threshold voltage, which is in the range of 2.3 to 2.4 V. As a result of these cycling modes, the lithium-sulfur element is not fully charged at the charge threshold voltage, and the lithium-sulfur element is not completely discharged at the discharge threshold voltage, which enables repeated cycling of the element for a long time without an increase in the internal resistance of the element.EFFECT: increase the service life and reduce the rate of reduction of the capacity of the element.14 cl, 9 dwg
ethod and assembly for process of elongated element binding and vulcanization // 2641654
FIELD: electricity.SUBSTANCE: method contains the following stages: extrusion (4) stage, where a conductor (12) is covered with a layer of banded material, stage at which perform binding reaction is performed by treating the coated conductor in the vulcanization tube (6) after the extrusion stage, and cooling stage (7), at which the coated conductor is cooled. The assembly further comprises of an induction heating device (10), located after the vulcanization tube (6) for heating the coated conductor.EFFECT: invention makes it possible to speed up the binding process and increase the linear speed of the process.4 cl, 9 dwg
Electrochemical method and system for obtaining glucose // 2641646
FIELD: chemistry.SUBSTANCE: method includes the reaction of water and dissolved gaseous carbon dioxide in the presence of a source of electromagnetic energy and melanin restrained on the substrate, so that glucose is obtained. The proposed system for the implementation of the method involves a reaction cell and a source of the electromagnetic energy, wherein the cell contains melanin on the substrate that restrains it.EFFECT: new effective method for obtaining glucose and a system for its implementation.13 cl, 2 ex, 1 tbl

ethod to control controllable shunt reactor and device for its implementation // 2641643
FIELD: electricity.SUBSTANCE: in control process, measurement and synchronization of their switching process with respect to sine voltage at controllable shunt reactor is carried out, and the process for changing the state of controlled keys is performed at maximum and minimum applied to controllable shunt reactor of sine voltage. A control device includes a controllable shunt reactor containing two parallel connected branches each of which contains series connection of two reactors and controlled key. One of outputs of controlled keys in each branch is connected to opposite outputs of the controllable shunt reactor, and an additional controlled key is connected between common connection points of reactors in each of parallel branch.EFFECT: provision of high quality electric power when controlling the controllable shunt reactor.2 cl, 4 dwg

ethod of perforating holes in electrodes of ion optical system // 2641641
FIELD: physics.SUBSTANCE: in a method for perforating holes in the electrodes of ion-optical system, based on the formation of ion beams and their subsequent impact onto the surface of the electrode, ion-optical system including an emission electrode is collected before exposing the ion beams onto the surface, then a discharge is formed, creating a flow of ions and directing it through the holes of the emission electrode on the processed surface of the electrode, where the ions are sprayed to the electrode material at the points of exposure.EFFECT: simplification of alignment between the holes in the electrodes when assembling the ion-optical system.4 dwg

Solar photovoltaic concentrator module // 2641627
FIELD: physics.SUBSTANCE: solar photovoltaic concentrator module contains a primary optical concentrator (3) in the form of Fresnel lenses with a linear size D, the optical axis (4) of which passes through the center (5) of the photocell (1) photoactive region, made in the form of a circle of the diameter d, and a secondary concentrator (6) coaxial with it, made in the form of a quarter wave radial gradana of the diameter d and a height h1 that is installed at a distance h2 from the front surface of the Fresnel lens, wherein the values h1, h2, and D satisfy the certain relationships.EFFECT: invention provides the formation of a photovoltaic module with increased reliability, with extended service life, and high energy efficiency due to the equalization of the illumination of the photoactive region and the reduction of the local concentration of solar radiation.2 cl, 1 dwg

icrowave attenuator // 2641625
FIELD: radio engineering, communication.SUBSTANCE: invention can be used for established attenuation of a microwave signal of high power in a wide band of operating frequencies. Microwave attenuator contains N has successively connected cascades, performed on planar film resistors, total area which provides a specified input power dissipation of the high-frequency signal, and the values of the coefficients transfer each stage ensures a uniform distribution of the radiated in them. All cascades are made in the form of a T-shaped structure and are located on a common dielectric substrate. All T-shaped structures of the area of each film resistor is proportional to the power on it is wasted and extreme width of film resistors is greater than the width of the average film resistor, and extreme film resistors adjacent t-shape structures merged into one common film resistor, square and resistance which are equal to the sum of squares and the sum of the resistances, respectively the united film resistors.EFFECT: simplification of design due to the fact that all film resistors are located on a dielectric substrate and not matching elements, the persistence of high input power level of the high-frequency signal by choosing the square each film resistor is proportional to the power on it is wasted.5 dwg, 3 tbl
Ultrafast and ultrasensitive hybrid superconducting waveguide single-photon detector with low dark count rate // 2641621
FIELD: physics.SUBSTANCE: ultrafast and ultrasensitive hybrid superconducting waveguide single-photon detector with a low dark count rate includes a sensitive nanowire from a superconducting NbN film located on a nanowave guide Si3N4, and a protective dielectric-metallic coating consisting of an SiO2 dielectric layer and a layer of Al metal deposited over the nanowire.EFFECT: providing the possibility of reducing false triggering of a superconducting single-photon waveguide detector and increasing the sensitivity of the superconducting single-photon waveguide detector.3 dwg

Avalanche photodetector // 2641620
FIELD: physics.SUBSTANCE: avalanche detector contains located on same substrate a photoconverter of the optical signal subjected to detection, into the current of free charge carriers and at least one avalanche amplifier of this current that has two layers: a contact layer and a multiplication layer. The multiplication layer facing the substrate is made of semiconductor material of the same conductivity type that the photoconverter, and is adjacent to the photoconverter forming with it the electrical contact. The first electrode is located on the contact layer of the avalanche amplifier, and the second electrode is located on the conductive substrate. The second version of the photoconverter is also proposed, in which between the multiplication layer and the substrate there is a buffer layer adjacent to the photoconverter and forming an electrical contact with it. The multiplication layer, the photoconverter, and the buffer layer made of the semiconductor material of the same conductivity type, the first electrode is located on the contact layer of the avalanche amplifier, and the second - on the conductive substrate.EFFECT: invention allows to realise avalanche detector having high sensitivity threshold, not limited by surplus dark noises when moving the photo-carriers from the photoconverter into the avalanche amplifier.24 cl, 8 dwg
ethod of manufacturing semiconductor device // 2641617
FIELD: electricity.SUBSTANCE: in method of manufacturing semiconductor device on GaAs substrate of source/drain n+ - type area by silicon ions implementation in two stages are formed: the first stage with the energy of 40 keV, a dose of 7*1013 cm-2, the second stage with energy 100 keV, a dose of 1*1014 cm-2 and heat treatment is conducted at a temperature of 800°C in nitrogen atmosphere within 20 min.EFFECT: reduction of contact resistance, manufacturability, improvement of parameters, improvement of quality and increase in yield percentage.1 tbl
 
2551014.
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