Information storage (G11)

G   Physics(388263)
G11            Information storage(18745)

Shifter // 2613533
FIELD: information technology.SUBSTANCE: shifter comprises a bidirectional shift matrix of dimension NxM, where M=log2N, from M elements cascade 2AND-2AND-2AND-3OR and 2AND-2AND-2OR, block for shifts number modification comprising a group of (M-2) OR elements, the first group of (M-1) AND elements and a group of (M-1) EXCLUSIVE OR elements, shift direction control unit comprising the second group of the (M-1) AND elements, a group of (M-1) AND elements with prohibition input, a group of (M-1) NO elements and the third group of (M-1) AND elements, zero result flag forming comprisng the first, the second and the third AND elements with prohibition input, the first and the second OR element and AND-NO element, four control inputs of direction set and the shift type.EFFECT: increased speed, possibility to set the amount of logical shift in the bits range between 0 and N or more than N.1 dwg, 3 tbl

ethod of recording, method of playback, device, terminal and system // 2612362
FIELD: information technology.SUBSTANCE: group of inventions includes a method of recording, method of playback, recording device, play-back device and audiosystem, including a recording terminal and a play-back terminal. The method of recording includes mark beginning instruction receiving while recording the audio data, creation of the mark event in accordance with the mark beginning instruction and mark event parameter record. Mark event is used to mark the audio data, while the mark event parameter recording includes record of the event identifier, audio data identifier and mark beginning time. Event identifier is used to identify the mark events, audio data identifier is used to identify the audio data, the mark beginning time is used to record the time point of recording audio data after the beginning of the mark event tagging, reception of mark end instruction, completion of the mark event parameter recording according to the mark end instructions for the mark data structure. Completion of the mark event parameter recording in accordance with the mark end instruction includes the mark end time record. The noted mark end time is used for recording the audio data recording time point after the mark event tagging completion and storing the noted audio data and mark data structure for getting an audio file.EFFECT: sorting out the problem of low information receiving efficiency because of the search operations complexity of a predetermined content in the audio data by repeated listening, thereby improving the information receiving efficiency.21 cl, 12 dwg
ethod of preparation, storage and transfer of operational and command information in telecode control complexes // 2611257
FIELD: information technology.SUBSTANCE: selected message on the transmitting side is encoded with binary positional code that determines the presence or absence of selected message at a removable set of messages, in the absence of the selected messages at a removable set of messages the selected message is written to the array of compressed data, then the parameters of the message are centered relatevely to mathematical expectations of messaging parameters, and after that entropy lossless encoding of compressed information is performed when restoring messages to the receiving side after entropy lossless decoding using positional message code, the message is found in the interchangeable set of messages and written to the array of recovered information, if the message is absent in the interchangeable set of messages, the message is read from the compressed information array, and the message and its parameters are written to the array of recovered information when the check is performed.EFFECT: increased reliability, integrity and information security of data transmission.5 cl, 2 tbl

ethod of line precharge of coincidence register associative storage (amu) and precharge module // 2611246
FIELD: electricity.SUBSTANCE: method contains recovery of the potential line matching to the potential of power bus of associative storage (CAM) in the period after completion of the next data comparison cycle in the stored external data cell and before the start of the next cycle comparing. This is accomplished by current flow between the power bus and CAM and matching line through the transistors of the same conductivity type, series-connected between the power bus of CAM and match line. Said potential recovery of matching line is carried out by the proposed module by setting precharge both paraphase comparing data signals in a logic low on the gates of these transistors.EFFECT: reduction of the area of the associative storage device and increase its noise immunity by eliminating signals, intended only for controlling precharge within a register, and devices, that are generating these signals.2 cl, 5 dwg

ethod and device for retransmitting data via user datagram protocol // 2610697
FIELD: physics, communications.SUBSTANCE: invention relates to digital communication systems, and specifically to methods of retransmitting data via a user datagram protocol (UDP). Method comprises comparing a current user datagram with a previous datagram. In case of detecting a loss, a mechanism for re-requesting the lost datagram is launched, which is executed until the lost datagram is obtained. In the device, a payload processing unit includes a lost datagram read and search control unit, a re-request timer, a lost datagram search unit, a unit for reading useful data from a useful data storage unit, a recorded/read datagram counter, an overhead information recording unit, a payload data receiving unit, a useful data recording unit, a FIFO unit, a datagram read and search multiplexer, and the payload processing unit of the transmission unit includes an error packet forming unit, a re-request system control unit, a processed data counter, a transmitted data counter, a useful data recording unit, a useful data multiplexing unit, a useful data read unit.EFFECT: invention reduces data loss while maintaining high speed characteristics.3 cl, 8 dwg, 2 tbl

ethod for saving information in fault recorders // 2610681
FIELD: radio engineering, communication.SUBSTANCE: method for storing information in the fault recorders is to record the digital data about, at least, one current physical process in the drive, made on the basis of the two flash-memories, each of them with the USB-connection and matching the parameters, and to save subsequently the data recorded in these flash-memories. Recording is performed in blocks of the digital data, wherein each block of the digital data, to be recorded, is recorded first in one and then in the other flash-memory, and recording in any of the flash-memory is performed after completion of recording and saving it in the other flash-memory.EFFECT: improving operational reliability by ensuring the best possible volume of the memorized data, in case of the registrar efficiency loss.1 dwg

Fault-tolerant memory unit // 2610264
FIELD: information technologies.SUBSTANCE: method is implemented by encoding of the source binary information based on organizing of independent examinations and due to introduction of an input encoding unit, an output coding unit, an error detection unit, a first OR gate, a second OR gate, AND gate array block, a first AND gate, a second AND gate, a first trigger, a second trigger, NOT gate, a delay element, a "device failure" transparency.EFFECT: provision of fault-tolerance by distinguishing between intermittent and constant errors.1 dwg, 2 tbl

ethod for phase memory material production // 2610058
FIELD: physics.SUBSTANCE: invention relates to preparation of ⋅chalcogenide semiconductor alloys used in the non-volatile phase memory devices. The method for production of the phase memory material, including grinding and mixing of the initial components selected from the following ratio: 66.7 mol. GeTe% and 33.3 mol. % Sb2Te3, while 0.5-3 wt % of tin (Sn) is added to the charge, then the prepared charge is placed into a quartz ampule, which is then evacuated to a residual pressure of 10-5 mm Hg and sealed off, and then the ampule with the material is heated stepwise to a temperature of 500°C at a rate of 3-4°C per minute, kept at a temperature of 500°C for 4-6 hours, with subsequent heating to a temperature of 750°C at a rate of 1-2°C per minute, at that the ampule with the material is rotated around its axis at a rate of 1-2 rpm for 4 hours during heating. The ampule is further cooled down in a switched-off furnace, followed by annealing of the synthesized material at a temperature of 500°C for 12 hours, after which the material is used for phase memory material production. Thin films of the memory phase material are prepared by vacuum thermal evaporation of the synthesized material. During deposition of the thin films, the residual pressure in the chamber was 210-3 mm Hg, the substrate temperature did not exceed 50°C, which allowed to obtain a thin film in an amorphous state.EFFECT: invention provides phase memory material with increased optical contrast that improves functional characteristics of rewritable optical discs.2 dwg

Data storage method and device // 2608958
FIELD: information technology.SUBSTANCE: invention relates to storing data and, in particular, to a method and a device for storing data. Technical result is achieved by determining row address Ri and column address Li of data in memory module, storing data in memory module in accordance with determined row address Ri and determined column address Li, wherein determination of row address Ri and column address Li of data in memory module includes determining Ri=i mod (Z/P) and determining Li=(i div Z)+{[(i mod 4)*(16/P)+(i mod Z)div(Z/P)]mod(64/P)}, where mod denotes arithmetic in residual classes, div is arithmetic integer division, i is serial number of data input, Z is a coefficient of expansion of LDPC codes and P is an index of parallelism of storing data for one group of random-access memory (ZUPD).EFFECT: technical result consists in shorter delay of data storage.3 cl, 5 dwg

Recording of data into smart card nonvolatile memory // 2607622
FIELD: computer engineering.SUBSTANCE: invention relates to computer engineering. Method of data recording into smart card nonvolatile memory device comprises input of recording command into smart card volatile memory device buffer memory; comparison by smart card of object identification parameter corresponding to recording command with object identification parameter, stored in smart card nonvolatile memory; with positive result of comparison: recording of intended for recording data included into recording command, from buffer memory into object corresponding to recording command, on predetermined address, which value is stored in nonvolatile memory; calculation of address corresponding to sum of predetermined address and recorded data size; storing of calculated address instead of predetermined address; with negative comparison result: recording of intended for recording data included into recording command from buffer memory into object corresponding to recording command, to default address; calculation of address corresponding to sum of default address and recorded data size; storing of calculated address as predetermined address.EFFECT: technical result consists in large size data recording to smart card.9 cl, 3 dwg

ethod of erasing information stored in nonvolatile rewritable memory, storage medium and motor vehicle computer // 2607240
FIELD: data processing.SUBSTANCE: group of inventions relates to data storage and can be used for deleting information stored in nonvolatile rewritable computer memory. Method includes preliminary steps of determining a virtual memory addressing space, associated with memory, in which each sector extends over a specific range of consecutive virtual memory addresses, and a step of establishing a first correspondence function for determining, from a range of virtual memory addresses, sector or sectors whose contents must be erased. Method also includes, for each erasing request received by a slave module indicating a range of virtual memory addresses, a step of determining sector or sectors whose contents must be erased by slave module. Memory comprises plurality of segments (S1, S2), broken down into a plurality of sectors and two segments comprise interleaved physical memory addresses, each erasing request sent by master module is sent indicating a range of virtual memory addresses corresponding only to a single segment of memory. Two consecutive erasing requests sent by master module respectively indicate ranges of virtual memory addresses corresponding to different segments of memory, said two consecutive erasing requests are aimed respectively at first segment (S1) and second segment (S2), corresponding erasing operations taking place in parallel.EFFECT: reduced risks of erroneous erasing of sectors containing interleaved physical memory addresses.4 cl, 6 dwg, 1 tbl

Architecture of optical memory expansion // 2603553
FIELD: computer engineering.SUBSTANCE: invention relates to computer engineering. Optical storage device expansion system contains the first electric logical circuit for transmitting data in accordance with the point-to-point interconnection protocol for data packet transmission in accordance with the full data transmission rate; the first intermediate circuit connected to receive data from the first electric circuit via the electric communication line, herewith the first intermediate circuit is made with the possibility of data conversion into the optical format intended for transmission at a rate of at least twice exceeding the full data transmission rate; the second intermediate circuit connected to receive data in the optical format from the first intermediate circuit via the optic communication line, herewith the second intermediate circuit is configured to convert data into the electric format corresponding to the point-to-point interconnection protocol for data packet transmission; and the second electric logical circuit connected to receive data from the first electric logical circuit, herewith the optic communication line is initialized in accordance with optical training states.EFFECT: technical result is the increase of the storage device bandwidth.36 cl, 24 dwg, 2 tbl

ethod of active layer producing for resistive memory // 2603160
FIELD: computer engineering.SUBSTANCE: invention can be used in making computer memory components, microprocessors, electronic passports and cards. Natural purified graphite is ground, in produced powder solvent is intercalated, not leading to graphite chemical oxidation, but promoting graphite stratification, for example, dimethyl formamide or N-methylpyrrolidone. For graphite particles stratification produced mixture is treated with ultrasound and obtaining suspension with graphene content of 50 %. For graphene fluoridation introducing from 3 to 10 % of hydrofluoric acid and from 40 to 47 % of water, including said intervals values. Smaller amount of hydrofluoric acid corresponds to larger amount of water and vice versa. Performing graphene fluoridation to 50-80 % for 20-60 days, including said values. Then, forming FG active layer for resistive memory element, for this purpose fluorinated suspension is dropwise applied on Si substrate or in combination using spin coulter, distributing it to required layer thickness, dried and washed in water. In another embodiment, fluorinated suspension, first washed, and then dropwise applied on Si substrate or in combination using spin coulter, distributing it to required layer thickness, and dried.EFFECT: invention enables maximum resistive effect stability.4 cl, 2 dwg, 5 ex

Restoring memory element // 2602765
FIELD: electronics.SUBSTANCE: invention relates to microelectronics. Restoring memory element has a substrate with a conducting electrode located on its working surface. Said conducting electrode has an active layer of dielectric. Second conducting electrode is located on the active layer. Conducting electrode located on the working surface and/or the second conducting electrode are made from metal. Dielectric layer is metal oxide from which conducting electrode located on the working surface and/or the second conducting electrode is made.EFFECT: technical result is lower voltage of reprogramming, as well as reduction of consumed power for reprogramming.14 cl, 1 dwg

Silicon multiplexer // 2602373
FIELD: electronics.SUBSTANCE: invention relates to optoelectronics and microelectronics and can be used to read electrical signals in photodetector sub-modules, for mosaic photodetectors, in particular in photodetectors on microbolometers. Silicon multiplexer consists of vertical and horizontal shift registers, line addressing system on n-MOS transistors, output unit, output amplifier and array of reading cells, also, device includes additional vertical register, additional horizontal register, switch for transmitting control signals from vertical register to additional vertical register and from horizontal register to additional horizontal register, RAM, comparators, counters and additional links.EFFECT: technical result is enabling reading not only within a full frame, but in fragments of full array of reading cells with user-specified coordinates and dimensions; minimising area of IC chip for reading photoelectric signal occupied by addressing unit, as well enabling reading of photoelectric signals of a fragment of a full image frame with given coordinates and dimensions.1 cl, 2 dwg

Programmable logic device // 2601145
FIELD: computer engineering.SUBSTANCE: invention relates to automation and computer systems and can be used for calculation of logic functions in self-synchronizing programmable logic integrated circuits. Device comprises a unit for calculating a logic function, a unit for calculating a dual logic function, a NOT-OR element, 2n inputs of inverse adjustment, n inputs of variables inversions, an inverse data output, a display output, herewith the units for calculating a logic function and a dual logic function include a group of 2n transistors of inverse conductivity, an additional inverter, the “Zero Volt” bus connection input.EFFECT: technical result is providing the possibility of initiation of a transient process completion for the device use in self-synchronizing circuits with paraphrase variables and a zero spacer.1 cl, 2 dwg, 2 tbl

ethod of controlling service life of non-volatile memory // 2600525
FIELD: computer engineering.SUBSTANCE: invention relates to computer engineering. Method of controlling service life of a data storage system, comprising dividing data storage system into multiple working sectors and multiple backup sectors, capable of forming backup of service life, wherein certain working sectors are subject to replacement with backup sectors in case of wear of said sectors after a certain number of programming and/or deletion cycles; setting a zone for controlling backup sectors for determining location of backup sectors assigned for replacement of worn-out working sectors; determining, sector by sector, whether current working sector is physically worn and replacing said working sector with backup sector, only if current working sector is deemed physically worn-out; wherein wear of a sector is evaluated by automatically reading quality deleting memory points of said sector and comparing with a boundary readability criterion (Margin Vref), which is harder than normal readability criterion (Normal Vref).EFFECT: technical result is longer operating life of memory.8 cl, 7 dwg

agnetic random access memory cell with improved dispersion of switching field // 2599956
FIELD: computer engineering.SUBSTANCE: invention relates to computer engineering. Magnetic random access memory (MRAM) cell comprises a tunnel magnetic junction having the first ferromagnetic layer, the second ferromagnetic layer with the second magnetization, which can be oriented relative to the axis of anisotropy of the second ferromagnetic layer at a predetermined high-temperature threshold, and a tunnel barrier between the first and the second ferromagnetic layers; the first current transmission line extending along the first direction and being in communication with the tunnel magnetic junction; herewith the first current transmission line is configured able to provide the magnetic field to orient the second magnetization while transferring the field current; wherein the MRAM cell is configured relative to the first current transmission line in such a way, that while providing the magnetic field at least one magnetic field component is perpendicular to the said axis of anisotropy; the second ferromagnetic layer is of asymmetric shape along at least one of its dimensions, so that the second magnetization contains the pattern of C-shape condition.EFFECT: technical result is the reduction of power consumption and improved dispersion of the switching field.12 cl, 6 dwg

Self-referenced magnetic random access memory element comprising synthetic storage layer // 2599948
FIELD: computer engineering.SUBSTANCE: element of random-access memory (MRAM) comprises a magnetic tunnel junction having: memory layer; reading layer; and a tunnel barrier layer enclosed between storage layer and reading layer; memory layer contains a first magnetic layer having a first storage magnetisation; second magnetic layer having a second storage magnetisation; and a non-magnetic binding layer separating first and second magnetic layers so that first storage magnetisation is substantially antiparallel to second storage magnetisation; wherein first and second magnetic layers are configured so that at reading temperature first storage magnetisation is substantially equal to second storage magnetisation; and at write temperature, which is higher than read temperature, second storage magnetisation is greater than first storage magnetisation.EFFECT: providing low power consumption and increased rate of recording and reading of memory cell.11 cl, 10 dwg

ram cell and method for writing to mram cell using thermally assisted write operation with reduced field current // 2599941
FIELD: computer engineering.SUBSTANCE: method for writing to a magnetic random-access memory (MRAM) cell using a thermally assisted write operation, comprising a magnetic tunnel junction, formed from a memory layer having magnetisation memory; reference layer having reference magnetisation, and a tunnel barrier layer, located between read and memory layers; and a current line which is electrically connected with said magnetic tunnel junction; wherein method includes passing heating current via magnetic tunnel junction for heating magnetic tunnel junction; passing field current for switching storage magnetisation in written direction according to polarity of field current, wherein value of heating current is such that it acts as a spin polarised current and causes adjustment of spin transfer on storage magnetisation; and heating current polarity is such that it causes adjustment of spin transfer on storage magnetisation in said written direction.EFFECT: low field current.6 cl, 4 dwg

Cell of magnetic random access memory (mram) with self reference inlcudning ferrimagnetic intrinsic layers // 2599939
FIELD: computer engineering.SUBSTANCE: invention relates to computer engineering. Cell of magnetic random access memory (MRAM) comprises a magnetic tunnel junction including a storage layer having a net magnetization for writing data, which is controlled from the first direction to the second direction when the magnetic tunnel junction is heated to high temperature threshold, and which is fixed at low-temperature threshold; reading layer having a net magnetization for reading, which is reversible; and a tunnel barrier layer separating the reading layer from the storage layer; besides, at least one of the memory layer and reading layer contains material of ferrimagnetic 3d-4f amorphous alloy containing subarray of atoms of transition 3d-metals providing the first magnetisation, and subarray of atoms of rare-earth 4f-elements, providing a second magnetisation, so that at compensation temperature of said at least one of the memory layer and reading layer the first magnetisation is equal to the second.EFFECT: technical result ensured MRAM cell recording and reading with a weak recording/reading field.9 cl, 3 dwg

emory controller and method of operating such memory controller // 2597520
FIELD: computer engineering.SUBSTANCE: memory controller for controlling access to a memory device of the type having a non-uniform access timing characteristic has an interface for receiving transactions issued from at least one transaction source; a buffer used to temporarily store as pending transactions those transactions that have not yet been issued to the memory device, wherein the buffer maintains a plurality of ordered lists for the stored pending transactions, including at least one priority based list, and at least one access timing list, wherein each priority based ordered list has a number of entries, each entry is associated with one of the pending transactions and ordered within its priority based ordered list based on the priority indication of the associated pending transaction; arbitration circuitry that performs an arbitration operation during which the plurality of ordered lists are referenced so as to select from the pending transactions a winning transaction to be issued to the memory device.EFFECT: to achieve a balance between reordering of transactions to improve memory access times.28 cl, 21 dwg

Recording device for recording information onto multilayer recording medium // 2596070
FIELD: information technology.SUBSTANCE: device for recording information onto multilayer recording medium contains an initialization means, which sets the block size to enclose a predetermined volume of information, and a recording means for further recording information on at least two information layers, so that the information is recorded alternately in at least two information layers. Recording means is designed for recording information in a block to enclose a predetermined volume of information onto the first layer of at least two above mentioned information layers, until the block is filled, and further recording of information in the next block to enclose a predetermined volume of information onto the second layer of at least two above mentioned information layers, differing from the first layer, until the next block is filled. Initiation means is designed for flexible setting a variable size of the block to enclose a predetermined volume of information, which is set depending upon the method used to transfer the information to be stored to the device, or upon the type of application transmitting the said information.EFFECT: technical result is faster recording.1 cl, 13 dwg

agnetic recording element // 2595588
FIELD: computer engineering.SUBSTANCE: magnetic recording element comprises a set of layers, which is a magnetic recording layer, wherein set includes central layer, at least of magnetised magnetic material, magnetisation direction parallel to plane of central layer, which is located between first and second outer layers of non-magnetic material; and device for recording current passing through second external layer and a central layer in direction of current, parallel to plane of central layer and making angle α in 90°±60° with said direction of magnetisation for driving in central layer effective magnetic field, wherein said current passes either in first direction, or in second direction opposite first magnetisation direction, for orientation of magnetisation direction in first magnetisation direction or in second direction of magnetisation opposite first magnetisation direction, direction of magnetisation is oriented in response to spin-orbital field, which is generated by recording current.EFFECT: providing recording operations without application of external magnetic field.33 cl, 12 dwg

Electronic device // 2593683
FIELD: information technology. SUBSTANCE: invention relates to field of playing back data recorded on optical disc, or to execute program stored on optical disc. Proposed electronic device using optical disc, comprises top surface, curved from its front edge to its rear edge so that central part of upper surface in forward-backward direction is located above front and rear edges, moving cover forming part upper surface and curved in accordance with shape of upper surface so that central part of cover in forward-backward direction is located above front and rear edges of cover. At that, movable cover has possibility of movement by sliding between open and closed positions, compartment to accommodate disc, closed by moving cover in closed position and made so that disc is located inside said separation, drive rotating element arranged in compartment to accommodate disc and inserted into central hole of optical disc for purpose of its rotation, front panel forming front part of upper surface of electronic device and rear panel that makes rear part of upper surface of electronic device, wherein movable cover has possibility of movement by sliding in direction to left and right between front panel and rear panel. EFFECT: increased height of driving device, as result it provides possibility of performing directly by user of optical disc insertion, id est simplified installation of optical disc in device. 9 cl, 9 dwg

ethod of processing, storage and transmission of telecode control commands // 2592456
FIELD: communication. SUBSTANCE: invention relates to processing, storage and transmission of telecode control commands in communication terminal systems. Method includes following: at transmitting side constant and variable parts of telecode control command are selected, in array of compressed information constant part of index telecode control command code in database telecode control command is placed, variable part of telecode control command normalized and is placed into array of compressed data, entropy coding of compressed information array is performed. At recovery of initial data on receiving side, after statistical decoding received information by code index constant part telecode control command in database of telecode control commands constant part of telecode command control is found and written into array of restored data, then for variable parts of telecode control command operation is executed, reverse to its normalisation, checking allowable range of values of telecode control command variable part and when performing this check variable part of command is placed into array of restored information. In absence of constant index code part of telecode control command in database of telecode control commands or failing to check permissible range of values of telecode control commands variable part in array of recovered information recording feature of telecode control command deleting. EFFECT: technical result is increase of reliability, accuracy and information security of telecode control commands. 6 cl

Determination of representative images for video // 2591656
FIELD: information technology.SUBSTANCE: group of inventions relates to determining representative image of at least one fragment of video filming. Video information comprises at least one fragment survey (SH), which is continuous sequence of images displaying scene on view from specific location. From filming fragment (SH) pictures are taken for producing continuous sequence of selected images (SI), uniformly distributed along whole filming fragment. Identifying at least one continuous sub-sequence (SB1, SB2, SB3) selected from images, which satisfy preset criterion of similarity. Image is selected from continuous part (SP) of filming fragment, which coincides with longest continuous sub-sequence (SB2) of selected images, which satisfy preset criterion of similarity. Selected image is representative image (RI) for filming fragment.EFFECT: technical result is high speed of representative image determining.14 cl, 8 dwg

Self-referential mram cell with optimised reliability // 2591643
FIELD: computer engineering.SUBSTANCE: invention relates to computer engineering. Element of magnetoresistive random access memory (MRAM), suitable for thermal recording and self-referential reading operation, has magnetic tunnel junction having first and second parts, each part has layer for storing, reading layer and tunnel barrier layer; wherein magnetic tunnel junction further comprises antiferromagnetic layer between two layers of memorising, fixing storage magnetisation of every layer storage at low temperature threshold and releasing at high temperature threshold, so that during recording operation free magnetisation of each layer is capable of reading on magnetic saturation in accordance with direction of magnetic field recording at application of this field and storage magnetisation are capable for switching in the direction, in fact, parallel and corresponding to direction of saturated free magnetisations.EFFECT: technical result consists in improvement of efficiency of heating the magnetic tunnel junction at minimisation of risks of breakdown and ageing tunnel barrier layers.9 cl, 1 dwg

ethod of recording data on optical recording medium and apparatus for reproducing data from optical data medium // 2586820
FIELD: instrument making.SUBSTANCE: invention relates to defect management on disks. Device for reproducing data from optical recording medium containing initial area, data and destination area, comprises head and controller. Recording medium has predetermined area for storage of substitution unit for replacing faulty unit, having defect in user data area, and list of defects. Controller controls head for reading list of defects of predefined area in optical recording medium and for reading of disc definition structure. A record of a list of defects has the first indicator, specifying a physical location of a defect unit, the second indicator, specifying a physical location of a substitution unit corresponding to a defect unit, and information on status of a defect unit and a substitution unit. Information on status comprises first information indicating whether faulty unit is single or serial, and if faulty unit is serial, second information indicating whether faulty unit is initial unit or final unit among serial defect units.EFFECT: technical result is increased efficiency of disk space controlling.1 cl, 15 dwg

agnetic memory element // 2585578
FIELD: physics.SUBSTANCE: group of inventions relates to a writeable magnetic element and writable magnetic device. Writable magnetic element comprises a stack of layers. Magnetic writing layer is made of at least one magnetic material having a direction of magnetisation that is parallel or perpendicular to central layer plane. Said writing layer is located between first and second outer layers made of different first and second non-magnetic materials, where second non-magnetic material is electrically conductive. Writable magnetic element also comprises a device for passing a write current only through second outer layer and magnetic writing layer, where write current flows in current direction parallel to magnetic writing layer plane and does not pass through stack of layers in a direction perpendicular to plane of layers, and a device for applying magnetic field with magnetisation direction and magnetic field perpendicular to each other.EFFECT: inversion of magnetisation is ensured due to magnetic layer which functions without passing current perpendicularly to plane of layers.24 cl, 25 dwg

Ternary reversible shift register // 2585263
FIELD: computer engineering.SUBSTANCE: invention relates to nonbinary circuitry. Technical result is achieved by including of shift into ternary reversible register, which contains ternary decoder 1×3, ternary multiplexers, ternary D triggers and two threshold elements of ternary logic.EFFECT: provision of devices on the basis symmetric ternary number system +1, 0 and -1 in environment of integrated semiconductor electronics.1 cl, 2 dwg, 3 tbl

Image processing device // 2584687
FIELD: information technology.SUBSTANCE: invention relates to image processing devices. Image processing device is disclosed, comprising a setting module and a processing module which processes editing. Setting module defines position of editing in moving image data contained in moving image file, which includes first moving image file recorded in response to set of commands for recording, and second moving image file recorded in response to single command recording. Setting module changes editing position on any of positions corresponding to positions of connection of multiple data units of moving image in accordance with a pre-set position when command editing moving image, and changes position of editing using a certain number of frames in a moving image data contained in second moving image file, as a unit for this purpose, in accordance with a defined position when command editing moving image.EFFECT: enabling data editing of moving image on frame by frame basis in accordance with type of moving image data.14 cl, 5 dwg

ethod of detecting and correcting falsifications of phonograms based on khurgin-yakovlev presentation // 2584493
FIELD: information security.SUBSTANCE: invention relates to protecting information from unauthorised change of content of audio record, specifically, to protection of audio records of falsifications and recovery of their initial content. Said technical result is achieved using Khurgin-Yakovlev presentation, which implies transmission groups of thinned signal readings and a derivative, shifted relative to each other by means of special delay line for a certain number of samples. Initial voice information in area of falsification of with certain loss of quality is reduced due to possibility of obtaining readings of signal readings derivative.EFFECT: technical result consists in reduction of mean-square error signal recovery as compared to synthesising filter built based on V.A.Kotelnikov theorem at 40-60 % at equal orders filters, with additional noise-immunity of reconstructed speech signal in comparison with algorithm based on Kotelnikov theorem at 1, 2 -1, 5 dB.1 cl, 1 dwg

Element and circuit for storage of magnetic state // 2584460
FIELD: computer engineering.SUBSTANCE: invention relates to computer engineering. Spin state storage element comprises magnetic device with variable resistivity configured to receive magnetic control signal to control resistance of said magnetic device with variable resistivity; and magnetic logic switching device connected with magnetic device with variable resistivity, wherein magnetic logic switching device is configured to receive magnetic logic input signal and perform logical operation based on magnetic logic input signal, as well as possibility of generating output signal based on magnetic resistance of above magnetic device with variable resistivity.EFFECT: technical result consists in creation of spin state storage element.25 cl, 16 dwg, 5 tbl

ethod and multifunctional associative matrix device for processing line data and solving tasks for recognising images // 2582053
FIELD: computer engineering.SUBSTANCE: group of inventions relates to computer engineering and can be used in special devices for hardware support of image recognition tasks standard operations, in hardware support in high-efficiency systems and devices for parallel processing of character information in hardware support output in information search and expert systems, performing treatment of rows (line data), and enables to realise operation for searching for sample and modification of line based on content addressable memory. Method includes steps of: symbols of processed line are substituted first with modifier in two-dimensional view processed line is parallel line shift to left symbols processed line at its two-dimensional view, second substring modifier is inserted into matrix, insignificant symbols of processed line are deleted at its one-dimensional representation in selected mask part by means of successive shift to right, wherein mask is dynamically generated to extract working part of processed line at fourth step.EFFECT: enabling reversible processing of lines.2 cl, 6 dwg

Recordable magnetic element // 2580378
FIELD: physics.SUBSTANCE: invention relates to a recordable magnetic element. The element comprises a stack of layers with a magnetic recording layer made of at least one magnetic material having a magnetisation direction perpendicular to the plane thereof, located between the first and second external layers made of the first and second nonmagnetic materials. The second nonmagnetic material is electroconductive. The recordable magnetic element includes a device which forces recording current to flow through the second external layer and the magnetic recording layer in the direction parallel to the plane of the magnetic recording layer, and a device for applying, in the presence of the said recording current, a magnetic recording field along the direction of the magnetic field, which is perpendicular to the plane of the magnetic recording layer. Memory is recorded in one direction or another direction by acting on the direction of the applied magnetic recording field.EFFECT: enabling the change of direction of magnetisation.19 cl, 13 dwg

emory unit of complementary metal-oxide-semiconductor structure ram // 2580072
FIELD: computer engineering.SUBSTANCE: invention can be used in static CMOS RAM blocks. Apparatus comprises an output bus of the storage unit, a memory consisting of two groups of transistors each connected through transmission gates four-bit data lines, two sense amplifiers, the first and second inputs of the first sense amplifier connected to the first and second bit lines of data, the first and second inputs of the second sense amplifier coupled to third and fourth bit lines of the data memory unit is provided with first and second additional transistors and gate NOR, and a bias line to the voltage across it is greater than threshold values, wherein the sense amplifiers are reflectors current pairs transistors with the structure of the metal-oxide semiconductor and the channel hole conductivity, the inputs of OR-NO elements are connected to the outputs of the first and second sense amplifiers, which are connected, respectively, drains of the first and second additional transistors, the gates of which are connected with the line offset voltage on it larger than the threshold, and the output of OR-NO element is connected to the output bus of the memory block.EFFECT: technical result is to increase the reliability of data read from the memory cells under the influence of a single nuclear particles in a state where the memory cell is based on two groups of transistors are temporarily stored in an unsteady state.1 cl, 1 dwg, 5 tbl

emory cell for complementary metal-oxide-semiconductor ram structure // 2580071
FIELD: computer engineering.SUBSTANCE: invention relates to computer engineering and can be used in units os multi-port static CMOS RAM. Memory cell for complementary microcircuit of metal-oxide-semiconductor structure RAM includes trigger, consisting of two groups of transistors, ports data recording and reading ports arranged on-chip integrated circuit, outputs of data recording ports are connected to corresponding outputs of two groups of transistors of trigger, according to the invention cell is equipped with two inverters and two inverters to third state, first outputs of first and second groups of transistors are connected to trigger input of first inverter, second outputs of first and second groups of transistors are connected to trigger input of second inverter, third output of first group of transistors of trigger and third output of second groups of transistors of trigger are connected to first inputs of first and second inverters to third state, output of first inverter is connected to second input of first and third input of second inverters to third state, output of second inverter is connected to third input of first and second input of second inverters to third state outputs of which are connected to inputs of data read ports.EFFECT: technical result consists in improvement of reliability of reading data from memory cell at impact of single nuclear particles in conditions when trigger memory cell based on two groups of transistors is in unbalanced state.2 cl, 3 dwg, 3 tbl

Sample and hold device // 2580039
FIELD: measuring equipment.SUBSTANCE: invention can be used in analog systems to digital signal processing. Technical result is achieved due to sample and hold that comprises two operational amplifiers, two analog switches, two diodes, resistor converter positive capacitance two pulse shaper and delay element, wherein the converter positive capacitance comprises a capacitor, two operational amplifiers, and four resistors.EFFECT: technical result is to reduce sampling time while ensuring a given accuracy of memorization.2 cl, 5 dwg

Fail-safe random access memory // 2579954
FIELD: computer engineering.SUBSTANCE: invention relates to computer engineering. Fail-safe random access memory using linear code, having minimum number of digits, for single and double error detection, as well as to determine configuration of erroneous discharges and their correction value of error syndrome and response analysis results, produced based on of supply of test input source contains computing channel, excess computing channel, first decoder, corrector, first to seventh blocks of OR elements, first to third OR elements, first through fourth delay elements, first and second units of AND elements, RS-trigger, register, first through fourth blocks of nonequivalence elements, second decoder, NOT element, storage unit and unit for calculating correction feature, at that, additionally contains eighth unit of OR elements, third unit of AND elements, first encoding device, unit for calculating syndrome, second encoding device.EFFECT: technical result consists in reduction of information and hardware redundancy owing to use of linear code.1 cl, 2 dwg, 1 ex

ethod relating to scr system and scr system // 2576557
FIELD: physics.SUBSTANCE: system comprises a feeding device for feeding a reducing agent into a dosing device from a reducing agent container. The dosing device comprises a valve device, an expansion section and heating devices. The method comprises the step of heating the said dosing device, prior to cutting off the supply of the reducing agent into the said dosing device, up to such a degree that when the reducing agent freezes in the said dosing device, the freezing process is controlled such that expansion due to the freezing of the reducing agent in the said dosing device occurs substantially in the said expansion section.EFFECT: group of inventions lowers the risk of the unfavourable action of low ambient temperature on the dosing device.19 cl, 5 dwg

Film magnetic structure for electrically controlled uhf devices // 2575123
FIELD: electricity.SUBSTANCE: structure contains thin film metal ferromagnetic layers, each of them is separated from the adjacent layer by a nonmagnetic dielectric layer. All the thin film metal ferromagnetic layers are divided to multiple electrically insulated areas, their dimensions are below one eighth of the length of the electromagnetic wave in the layer of the nonmagnetic dielectric.EFFECT: increased activity of the film magnetic structure, ie its ability to change its HF effective magnetic permeability under the action of an external control magnetic field.3 cl, 5 dwg

Extensible file system // 2574824
FIELD: information technology.SUBSTANCE: computing device for implementing an extensible file system format, comprising a computer-readable data medium which stores computer-executable components for storing data associated with a volume. The computer-executable components comprise: a volume model loading parameter component; a volume model file allocation table; and a volume model file data component. Said file data component is separate from the file allocation table and contains a plurality of primary directory entries and secondary directory entries, which comprise: a critical primary directory entry, a benign primary directory entry and a critical secondary directory entry.EFFECT: providing an extensible file system format for portable data media.20 cl, 13 dwg

agnetic random access memory cell with low power consumption // 2573757
FIELD: physics, computer engineering.SUBSTANCE: invention relates to computer engineering. A magnetic random access memory cell comprises a magnetic tunnel junction having an upper electrode; a first ferromagnetic layer having a first magnetisation direction; a second ferromagnetic layer having a second magnetisation direction which can be adjusted relative to the first magnetisation direction; a tunnel barrier layer between the first and second ferromagnetic layers; and an external layer, wherein the second ferromagnetic layer is situated between the external layer and the tunnel barrier layer; wherein the magnetic tunnel junction further comprises a magnetic or metallic layer on which the second ferromagnetic layer is deposited; and wherein the second ferromagnetic layer has a thickness between 0.5 nm and 2 nm, and is configured to provide the magnetic tunnel junction with magnetoresistance which is greater than 100% by annealing at temperature of 280°C-360°C during an annealing time period of 30 min to 2.5 h, with application of a magnetic field of 0.5-2 T.EFFECT: low spin polarised writing current with magnetoresistance of 100% or higher.16 cl, 5 dwg

agnetic tunnel junction having polarising layer // 2573756
FIELD: physics, computer engineering.SUBSTANCE: invention relates to computer engineering. A method of making a magnetic tunnel junction to be written with a spin polarised current, the magnetic tunnel junction having a tunnel barrier layer between a first ferromagnetic layer having a first magnetisation with a fixed orientation and a second ferromagnetic layer having a second magnetisation being freely oriented, and a polarising layer having a polarising magnetisation; comprising: depositing the first and second ferromagnetic layers and the tunnel barrier layer; annealing the deposited ferromagnetic layers at a first annealing temperature of 300°C or higher such as the tunnel magnetoresistance of the magnetic tunnel junction is equal to or greater than 150%; depositing the polariser layer; and annealing the deposited polariser layer at a second annealing temperature between 150°C and 250°C so as to orient the polarising magnetisation perpendicular to the first and second magnetisation, said annealing of the deposited ferromagnetic layers at the first annealing temperature being performed prior to depositing the polariser layer.EFFECT: providing high tunnel magnetoresistance, which is equal to or greater than 150%.6 cl, 1 dwg

ultibit cell with synthetic storage layer // 2573457
FIELD: physics, computer engineering.SUBSTANCE: invention relates to electronics, particularly to a method of recording and reading more than two bits of data for a magnetic random access memory (MRAM) cell. A MRAM cell comprises a magnetic tunnel junction formed from a read magnetic layer having a read magnetisation, and a storage layer comprising a first storage ferromagnetic layer having a first storage magnetisation, a second storage ferromagnetic layer having a second storage magnetisation. The method includes heating the magnetic tunnel junction over a high temperature threshold; orienting the first storage magnetisation at an angle relative to the second storage magnetisation for the magnetic tunnel junction to reach a resistance state level determined by the orientation of the first storage magnetisation relative to the orientation of the read magnetisation; and cooling the magnetic tunnel junction.EFFECT: enabling storage of at least four distinct state levels in a MRAM cell using only one current line to generate a writing field.15 cl, 14 dwg

Cell of static random access memory // 2573226
FIELD: electricity.SUBSTANCE: cell of static random access memory comprises a group of four n-MOS transistors including the first, second, third and fourth triggers, a group of four p-MOS transistors including the first, second, third and fourth triggers, the first and second bit record pass transistors, the first and second bit inversion pass transistors, a supply voltage input, a Zero Volt input, a bit value input, a bit inversion value input, a record input, a data output, at that the cell includes additionally the second group of four n-MOS transistors, the second group of four p-MOS transistors, the third and fourth bit record pass transistors, the third and fourth bit inversion pass transistors, the second inverse data output.EFFECT: fail-safety improvement in regard to the irreversible failure of the transistors.5 dwg, 1 tbl

agnetoelectric memory // 2573207
FIELD: physics.SUBSTANCE: magnetoelectric memory comprises a magnetic element, having two directions of stable equilibrium of its magnetisation, wherein said directions are not opposite to each other; an piezoelectric or electrostrictive substrate which is mechanically linked to said magnetic element; and at least a first and a second electrode, configured to apply an electric field to the piezoelectric or electrostrictive substrate such that said substrate acts on said magnetic element with non-isotropic mechanical stress which causes transition of the magnetisation state of said magnetic element due to magnetostrictive coupling.EFFECT: eliminating the energy barrier between two stable states during transition.19 cl, 23 dwg

ultilevel magnetic element // 2573205
FIELD: physics, computer engineering.SUBSTANCE: invention relates to computer engineering. A multilevel magnetic element comprises a first tunnel barrier layer between a sensitive layer having magnetisation which can be freely aligned and a first storage layer having magnetisation which is fixed at a first low temperature threshold and can be freely aligned at a first high temperature threshold, wherein the magnetic element further comprises a second tunnel barrier layer and a second storage layer having magnetisation which is fixed at a first low temperature threshold and can be freely aligned at a second high temperature threshold, the sensitive layer being formed between the first and second tunnel barrier layers.EFFECT: longer service life of the magnetic element owing to low heating current required to heat the magnetic element.12 cl, 3 dwg, 4 tbl

agnetoresistive memory cell and method for use thereof // 2573200
FIELD: physics.SUBSTANCE: magnetoresistive memory cell comprises a remagnetisable layer and a non-remagnetisable layer separated by a barrier layer, and writing and reading means. The memory cell further includes a fastening layer made of p- or n-type semiconductor material, the next layer of semiconductor material with an opposite type of conductivity, forming a p-n junction, comprises an address line and a bit line, situated on both sides of the listed layers of the memory cell, means of generating write currents in the address and bit lines, reading means in the form of means of measuring electrical resistance of the memory cell, as well as means of setting polarity and the value of relative electrical bias between the address and bit lines.EFFECT: simple technique of making a magnetoresistive memory cell.2 cl, 1 dwg
 
2551012.
Up!