Information storage (G11)

G   Physics(391163)
G11            Information storage(18772)

agnetic memory and method of management of it // 2628221
FIELD: physics.SUBSTANCE: magnetic memory comprises an array of cells including a plurality of memory cells disposed along the first and second directions, the array of cells including a first region and a second region around the first region, and each memory cell includes an element with a magnetoresistive effect in the quality of the memory element; and a reading circuit to read data from a memory location selected based on the address signal from the number of memory cells, wherein the reading circuit selects one definition layer from the plurality of determination levels based on a region of the number of the first and second regions in which the selected memory location is located and uses the selected detection level to read data from the selected memory location.EFFECT: increase the reliability of magnetic memory.20 cl, 11 dwg

emory system // 2628124
FIELD: information technology.SUBSTANCE: device for use in memory module which is connected to the host memory controller via the bus, comprises memory module controller comprising a hardware for generating a request signal to the host memory controller indicating that the host memory controller can gain access to the memory module, wherein the host controller sends read and write requests via the bus to the memory module for storing data in the memory chips of the memory module, while the request signal has a pulse duration greater than or equal to the minimum pulse duration, where the minimum pulse duration comprises a number of clock cycles needed to ensure that the host memory controller detects the request signal, and where the pulse duration of the request signal indicates at least one function in addition to the request signal in the host memory controller.EFFECT: providing possibility of signalizing about at least one of a plurality of different functions in a single request signal.25 cl, 23 dwg

ethod for forming and usage of the inverted index of audio recording and machinescent of information storage device // 2628118
FIELD: physics.SUBSTANCE: method of forming and using an inverted audio recording index involves obtaining a new audio for indexing, determining the first chromed word associated with the new audio recording for indexing the first chromed word containing the initial portion of the chromium word which is a subset of the bytes having the first byte and subsequent bytes immediately after the first mentioned byte, determining a specific set of wordposition lists based on the first byte in a plurality of sets of wordposition lists. A particular set of word-list comprises lists words having reference to chrome word with the same first byte in the initial part, while under the subsequent byte of first chrome word of any subsequent bytes of any chrome word stored in the list of records in a particular set of records lists, maintaining the display of the new first chrome word in this recording list, followed by the non-byte first chrome word any subsequent bytes of any chrome word stored in the record lists, formation of new list of records in a particular set of records lists while maintaining display of the new chrome word.EFFECT: effective search for duplicates of musical compositions.32 cl, 8 dwg

Hybrid memory device // 2627100
FIELD: physics.SUBSTANCE: memory devices, controllers and electronic devices containing memory devices are described. In one embodiment, the memory device comprises volatile memory, non-volatile memory, and a controller comprising a memory buffer and a logic block for transferring data between the non-volatile memory and the volatile memory via a memory buffer in response to requests from the application. The data in the memory buffer is available to the application. Other embodiments of the invention are also disclosed and claimed.EFFECT: increasing the memory speed for the same size and the memory capacity.17 cl, 11 dwg

System and methods of forming scene stabilized metadata // 2627048
FIELD: information technology.SUBSTANCE: in the video data stream is divided or segmented into scenes and the first set of metadata can be generated for this scene of video data. The first set of metadata can represent any known metadata by way of the desired video content function (e.g., brightness). The first set of metadata can be generated on a frame-by-frame basis. In one example, staged stable metadata that may be different from the first set of metadata for the scene may be generated. Scenic stable metadata can be generated by tracking the desired feature with the scene and can be used to maintain the desired feature within an acceptable range of values.EFFECT: reduction of visual artefacts when rendering video data.11 cl, 7 dwg

ethod of playing a film // 2627047
FIELD: physics.SUBSTANCE: method of playing a movie is suggested, in which the film itself is automatically assembled in such a way that it differs each time it is viewed. The method of playing the movie ends with the creation of a "multifilm", i.e. the movie, which changes its plot with each playback.EFFECT: possibility of additional views of the same movie, so that the film itself is automatically assembled in such a way that it differs with each viewing.11 cl, 7 dwg

ethod and cloud data storage device, using mass storage device // 2624574
FIELD: information technology.SUBSTANCE: in this method perform the connection to the cloud data storage device computer, launching of the program to synchronize the cloud data storage device, changing of the data on the cloud storage device, data timing, located on the data device in the cloud storage. Initially, the external storage device is inserted into the cloud storage device socket, and the cloud storage device is connected to the computer. Then the computer starts the synchronization program with cloud data storage, change the data, stored in the file system of the mass storage device, having the internet access the synchronization program automatically produces similar data changes in the cloud storage, when the connection with internet is failed, the synchronization program automatically registers the changes of the mass storage device file system, and after the internet connection is restored the information is automatically synchronized with the cloud data storage.EFFECT: data automatic synchronization between the mass storage device and the cloud storage.15 cl, 2 dwg

ethod of detecting signals from the magnetic recorder, recorded by rll codes, and a detector for its implementation // 2623660
FIELD: physics.SUBSTANCE: method is implemented by using such features of the magnetic recording and playback path as recording at two levels and, accordingly, alternating directions of successive magnetization drops, taking into account the d-constraint of the RLL codes, and using the difference sign between successive counts at bit centers that does not change (without allowance for additive noise) under the action of multiplicative interference. The detector detects the presence of an extremum at a given bit interval using digital samples at the center of the bit intervals. In the event that the samples are sequentially incremented on (d+1) bit intervals, and in successive (d+1) bit intervals, the readings are successively reduced, the detector detects the presence of an extremum and puts "1" of the channel code in the discharge register, shifted by (d+1) bits to the higher-order bits relative to the least significant bit of the output shift register. Similarly, if the readings are successively decreased in (d+1) bit intervals, and the subsequent (d+1) bit intervals are incremented sequentially, the detector detects the presence of an extremum and puts "1" of the channel code in the discharge register, shifted on (d+1) digits in the direction of the highest digits relative to the least significant digit of the output register. The shift to (d+1) is related to the delay of the detector solution about the presence of an extremum with respect to the actual position of the extremum. After the end of the current channel code, the decision on the values of its least significant bits has not yet been made, so in parallel with the beginning of the next channel code, two short cycles are created on two counters to (d+1). One counter counts (d+1) clock pulses, and the second "freezes" with the arrival of "1" channel code, i.e. determines the position "1" in the lower bits of the previous channel code, after which "1" is entered in the corresponding lower order bit of the output register and its contents are output to the controller.EFFECT: increased noise immunity.2 cl, 2 dwg

Non-volatile random access memory // 2622869
FIELD: physics.SUBSTANCE: device comprises a cell memory matrix with banks, wherein each bank includes rows, the first word lines provided in accordance with the rows, an address latch-circuit, which latches the first row address signal, a row decoder, which activates one of the first word lines, and a control circuit, that is configured to perform the first operation, which activates one of the banks on the basis of the bank address signal, when the first instruction is loaded, and the second operation, which latches the first row address signal in the address latch-circuit and to perform the third operation, which activates one of the first word lines by the row decoder on the basis of the second row address and the first row address signal latched in the address latch-circuit, when the second instruction is loaded after the first instruction.EFFECT: increasing the number of the address bits with the unchanged device specifications.35 cl, 21 dwg

Device for storage and transmission of information with error detection // 2621284
FIELD: information technology.SUBSTANCE: method is performed by encoding the original binary information based on the organization of independent checks and by introducing an input encoding unit 2, an output encoding unit 3, an error detection unit 4, an AND element block 5, an AND element 6, an OR element 7.EFFECT: increase of information transfer and storage appliance functioning authenticity by detection of single and double errors.1 dwg

Logical comparison element of complimentary metal-oxide-semiconductor structure of associate selector of memory device // 2621011
FIELD: physics.SUBSTANCE: device contains two inverters with a third state, a data write port, a trigger consisting of two groups of transistors, each of which includes two pairs of P"МОП" and N"МОП" transistors.EFFECT: increasing the noise immunity of a logical element under the influence of single nuclear particles.5 cl, 4 dwg, 5 tbl

emory device based on change in resistance // 2620502
FIELD: information technology.SUBSTANCE: according to one of the embodiments, memory device based on the resistance change includes a memory cell, a reading amplifier and a global bit line. Memory cell is in the location of crossed local bit line and word line. Memory cell is connected both to a local bit line and a word line. Reading amplifier reads the data stored in the memory cell by read current supply to the memory cell. Global bit line is connected between the local bit line and the reading amplifier. Global read bit line delivers read current supplied through the reading amplifier to the local bit line. Reading amplifier charges the global bit line before the local bit line and the global bit line are connected to each other.EFFECT: reduction of recording and reading time.20 cl, 9 dwg

Device and method for recording images and device and method for reproducing images // 2618908
FIELD: physics.SUBSTANCE: image recording device comprises: an image forming unit; a start/stop button, which is a button for giving instructions to start or to stop recording of the moving images; a setting unit configured to set one of the plurality of modes including the first recording mode and the second recording mode; and a control unit configured to control so as to start or to stop, when the first recording mode is set, the recording of the moving image on the recording medium and to control so as to record, when the second recording mode is set, with continued recording of the moving image on the recording medium, information indicating the beginning or the end of the scene; wherein when the recording of the moving image is performed in the second recording mode, the recording of the moving image is not terminated in accordance with the operation on the said button, and the recording of the moving image is terminated without the operation on the said button.EFFECT: providing an improved recording and reproducing of the moving image.37 cl, 40 dwg

ultilevel scale indicator, method and device for controlling scale position // 2618770
FIELD: measuring equipment.SUBSTANCE: multilevel scale indicator is proposed, as well as methods and devices for controlling the scale position, which belong to the field of the computer technology. The multilevel scale indicator comprises, at least, two levels of the scale indicators, each of which includes a slider of the scale position on it. The slider of the scale position is configured to adjust the scale position on the corresponding scale indicator; while the corresponding scale indicator levels correspond to different functions of adjusting the scale position. Each of the scale position adjusting functions is a function representing the ratio between the sliding length of the scale position slider and the adjustment value of the scale positions. The levels of the scale indicators move consistently on the basis of the corresponding adjustment values of the scale position and the corresponding adjustment functions of the scale position.EFFECT: proposed group of inventions allows to make fine adjustments of the scale position, so that the problem of inaccurate scale positioning can be solved, which is available in the prior art.20 cl, 11 dwg

Controlled device for storage and transmission of information // 2618388
FIELD: information technology.SUBSTANCE: device contains: a memory node, an encoding input block, an output encoding block, an error detection unit, an AND element block, an AND element, an OR element block.EFFECT: increase of information transfer and storage appliance functioning authenticity by detection of single and double errors.1 dwg

A semiconductor memory device // 2618368
FIELD: electricity.SUBSTANCE: first device comprises word lines, connected to the memory cell array; second word lines connected to the spare area; The first line of a decoder configured to perform a selection of the first word lines on the basis of the row address; determination circuitry operable to determine whether or not a spare area replacing operation based on alternate-address included in the address line; and second lines of the decoder configured to perform a selection of the second word lines. Address lines include a first row address and a second row address input means in order of time-sharing. The first address line includes a full back-up address.EFFECT: increase in speed of the memory device.13 cl, 7 dwg

Low power electronic system architecture using non-volatile magnetic memory // 2616171
FIELD: computer engineering.SUBSTANCE: invention relates to computer engineering. Computer system comprises multiple functional modules, each functional module contains a functional unit and a magnetic random access memory (MRAM) unit, connected to operating unit, wherein MRAM unit is configured to store operational condition of functional unit during hibernation of functional module containing said functional unit; wherein computer system is configured to switch one of functional modules into standby state, when other functional modules are in an on state.EFFECT: technical result consists in reduction of consumed power and time for reading and recording.15 cl, 8 dwg

ultiinput logic gate of complementary metal-oxide-semiconductor decoder structure // 2616170
FIELD: information technology.SUBSTANCE: multiinput logic gate of complementary metal-oxide-semiconductor decoder structure is given, consisting of OR-NO static elements and AND-NO static elements connected to each other in a chain of alternating elements so that OR-NO elements outputs are connected to inputs of AND-NO elements subsequent in the chain, AND-NO elements outputs are connected to inputs of OR-NO elements subsequent in the chain. Multiinput logic gate is fitted with compensating transistors with electronic conductivity channels and compensating transistors with hole conduction channels. Drain areas of each compensating transistor are placed on integrated circuit chip regarding to stock areas of transistors with channels of same conductivity as each preceding element in the chain at a distance providing a simultaneous influence of single nuclear particle to the said transistor areas.EFFECT: improved noise immunity of multiinput logic gate under influence of a single nuclear particle.3 cl, dwg 9

Information processing method and device and recording medium // 2615072
FIELD: data processing.SUBSTANCE: group of inventions relates to information processing. Device comprises a unit for making a decision on a recording system for generating basing on characteristics of data to be recorded on a recording medium multiple areas of recording on a logical device configured by the recording medium and making a decision on recording systems to be used in each of the recording areas; and a unit for initializing the logical device for initialization of each of the recording areas of the logical device basing on certain recording systems, herewith the characteristics of data recorded on the recording medium are characteristics including the value of storage duration, which is the period of storing data, and the value of error coefficient, which is a percentage of errors allowable for generating when reading data; and the recording systems additionally contain a recording system using a multilevel cell (MLC), in which the redundancy code is set so, that the possibility of correcting an error is low and the degree of redundancy of levelling the recording is set at a low value, and/or a recording system using a MLC, in which the redundancy code is set so, that no possibility of correcting an error is required and the degree of redundancy of levelling the recording is set at the medium level value.EFFECT: technical result is optimizing a data recording system in accordance with the use.8 cl, 11 dwg

Shifter // 2613533
FIELD: information technology.SUBSTANCE: shifter comprises a bidirectional shift matrix of dimension NxM, where M=log2N, from M elements cascade 2AND-2AND-2AND-3OR and 2AND-2AND-2OR, block for shifts number modification comprising a group of (M-2) OR elements, the first group of (M-1) AND elements and a group of (M-1) EXCLUSIVE OR elements, shift direction control unit comprising the second group of the (M-1) AND elements, a group of (M-1) AND elements with prohibition input, a group of (M-1) NO elements and the third group of (M-1) AND elements, zero result flag forming comprisng the first, the second and the third AND elements with prohibition input, the first and the second OR element and AND-NO element, four control inputs of direction set and the shift type.EFFECT: increased speed, possibility to set the amount of logical shift in the bits range between 0 and N or more than N.1 dwg, 3 tbl

ethod of recording, method of playback, device, terminal and system // 2612362
FIELD: information technology.SUBSTANCE: group of inventions includes a method of recording, method of playback, recording device, play-back device and audiosystem, including a recording terminal and a play-back terminal. The method of recording includes mark beginning instruction receiving while recording the audio data, creation of the mark event in accordance with the mark beginning instruction and mark event parameter record. Mark event is used to mark the audio data, while the mark event parameter recording includes record of the event identifier, audio data identifier and mark beginning time. Event identifier is used to identify the mark events, audio data identifier is used to identify the audio data, the mark beginning time is used to record the time point of recording audio data after the beginning of the mark event tagging, reception of mark end instruction, completion of the mark event parameter recording according to the mark end instructions for the mark data structure. Completion of the mark event parameter recording in accordance with the mark end instruction includes the mark end time record. The noted mark end time is used for recording the audio data recording time point after the mark event tagging completion and storing the noted audio data and mark data structure for getting an audio file.EFFECT: sorting out the problem of low information receiving efficiency because of the search operations complexity of a predetermined content in the audio data by repeated listening, thereby improving the information receiving efficiency.21 cl, 12 dwg
ethod of preparation, storage and transfer of operational and command information in telecode control complexes // 2611257
FIELD: information technology.SUBSTANCE: selected message on the transmitting side is encoded with binary positional code that determines the presence or absence of selected message at a removable set of messages, in the absence of the selected messages at a removable set of messages the selected message is written to the array of compressed data, then the parameters of the message are centered relatevely to mathematical expectations of messaging parameters, and after that entropy lossless encoding of compressed information is performed when restoring messages to the receiving side after entropy lossless decoding using positional message code, the message is found in the interchangeable set of messages and written to the array of recovered information, if the message is absent in the interchangeable set of messages, the message is read from the compressed information array, and the message and its parameters are written to the array of recovered information when the check is performed.EFFECT: increased reliability, integrity and information security of data transmission.5 cl, 2 tbl

ethod of line precharge of coincidence register associative storage (amu) and precharge module // 2611246
FIELD: electricity.SUBSTANCE: method contains recovery of the potential line matching to the potential of power bus of associative storage (CAM) in the period after completion of the next data comparison cycle in the stored external data cell and before the start of the next cycle comparing. This is accomplished by current flow between the power bus and CAM and matching line through the transistors of the same conductivity type, series-connected between the power bus of CAM and match line. Said potential recovery of matching line is carried out by the proposed module by setting precharge both paraphase comparing data signals in a logic low on the gates of these transistors.EFFECT: reduction of the area of the associative storage device and increase its noise immunity by eliminating signals, intended only for controlling precharge within a register, and devices, that are generating these signals.2 cl, 5 dwg

ethod and device for retransmitting data via user datagram protocol // 2610697
FIELD: physics, communications.SUBSTANCE: invention relates to digital communication systems, and specifically to methods of retransmitting data via a user datagram protocol (UDP). Method comprises comparing a current user datagram with a previous datagram. In case of detecting a loss, a mechanism for re-requesting the lost datagram is launched, which is executed until the lost datagram is obtained. In the device, a payload processing unit includes a lost datagram read and search control unit, a re-request timer, a lost datagram search unit, a unit for reading useful data from a useful data storage unit, a recorded/read datagram counter, an overhead information recording unit, a payload data receiving unit, a useful data recording unit, a FIFO unit, a datagram read and search multiplexer, and the payload processing unit of the transmission unit includes an error packet forming unit, a re-request system control unit, a processed data counter, a transmitted data counter, a useful data recording unit, a useful data multiplexing unit, a useful data read unit.EFFECT: invention reduces data loss while maintaining high speed characteristics.3 cl, 8 dwg, 2 tbl

ethod for saving information in fault recorders // 2610681
FIELD: radio engineering, communication.SUBSTANCE: method for storing information in the fault recorders is to record the digital data about, at least, one current physical process in the drive, made on the basis of the two flash-memories, each of them with the USB-connection and matching the parameters, and to save subsequently the data recorded in these flash-memories. Recording is performed in blocks of the digital data, wherein each block of the digital data, to be recorded, is recorded first in one and then in the other flash-memory, and recording in any of the flash-memory is performed after completion of recording and saving it in the other flash-memory.EFFECT: improving operational reliability by ensuring the best possible volume of the memorized data, in case of the registrar efficiency loss.1 dwg

Fault-tolerant memory unit // 2610264
FIELD: information technologies.SUBSTANCE: method is implemented by encoding of the source binary information based on organizing of independent examinations and due to introduction of an input encoding unit, an output coding unit, an error detection unit, a first OR gate, a second OR gate, AND gate array block, a first AND gate, a second AND gate, a first trigger, a second trigger, NOT gate, a delay element, a "device failure" transparency.EFFECT: provision of fault-tolerance by distinguishing between intermittent and constant errors.1 dwg, 2 tbl

ethod for phase memory material production // 2610058
FIELD: physics.SUBSTANCE: invention relates to preparation of ⋅chalcogenide semiconductor alloys used in the non-volatile phase memory devices. The method for production of the phase memory material, including grinding and mixing of the initial components selected from the following ratio: 66.7 mol. GeTe% and 33.3 mol. % Sb2Te3, while 0.5-3 wt % of tin (Sn) is added to the charge, then the prepared charge is placed into a quartz ampule, which is then evacuated to a residual pressure of 10-5 mm Hg and sealed off, and then the ampule with the material is heated stepwise to a temperature of 500°C at a rate of 3-4°C per minute, kept at a temperature of 500°C for 4-6 hours, with subsequent heating to a temperature of 750°C at a rate of 1-2°C per minute, at that the ampule with the material is rotated around its axis at a rate of 1-2 rpm for 4 hours during heating. The ampule is further cooled down in a switched-off furnace, followed by annealing of the synthesized material at a temperature of 500°C for 12 hours, after which the material is used for phase memory material production. Thin films of the memory phase material are prepared by vacuum thermal evaporation of the synthesized material. During deposition of the thin films, the residual pressure in the chamber was 210-3 mm Hg, the substrate temperature did not exceed 50°C, which allowed to obtain a thin film in an amorphous state.EFFECT: invention provides phase memory material with increased optical contrast that improves functional characteristics of rewritable optical discs.2 dwg

Data storage method and device // 2608958
FIELD: information technology.SUBSTANCE: invention relates to storing data and, in particular, to a method and a device for storing data. Technical result is achieved by determining row address Ri and column address Li of data in memory module, storing data in memory module in accordance with determined row address Ri and determined column address Li, wherein determination of row address Ri and column address Li of data in memory module includes determining Ri=i mod (Z/P) and determining Li=(i div Z)+{[(i mod 4)*(16/P)+(i mod Z)div(Z/P)]mod(64/P)}, where mod denotes arithmetic in residual classes, div is arithmetic integer division, i is serial number of data input, Z is a coefficient of expansion of LDPC codes and P is an index of parallelism of storing data for one group of random-access memory (ZUPD).EFFECT: technical result consists in shorter delay of data storage.3 cl, 5 dwg

Recording of data into smart card nonvolatile memory // 2607622
FIELD: computer engineering.SUBSTANCE: invention relates to computer engineering. Method of data recording into smart card nonvolatile memory device comprises input of recording command into smart card volatile memory device buffer memory; comparison by smart card of object identification parameter corresponding to recording command with object identification parameter, stored in smart card nonvolatile memory; with positive result of comparison: recording of intended for recording data included into recording command, from buffer memory into object corresponding to recording command, on predetermined address, which value is stored in nonvolatile memory; calculation of address corresponding to sum of predetermined address and recorded data size; storing of calculated address instead of predetermined address; with negative comparison result: recording of intended for recording data included into recording command from buffer memory into object corresponding to recording command, to default address; calculation of address corresponding to sum of default address and recorded data size; storing of calculated address as predetermined address.EFFECT: technical result consists in large size data recording to smart card.9 cl, 3 dwg

ethod of erasing information stored in nonvolatile rewritable memory, storage medium and motor vehicle computer // 2607240
FIELD: data processing.SUBSTANCE: group of inventions relates to data storage and can be used for deleting information stored in nonvolatile rewritable computer memory. Method includes preliminary steps of determining a virtual memory addressing space, associated with memory, in which each sector extends over a specific range of consecutive virtual memory addresses, and a step of establishing a first correspondence function for determining, from a range of virtual memory addresses, sector or sectors whose contents must be erased. Method also includes, for each erasing request received by a slave module indicating a range of virtual memory addresses, a step of determining sector or sectors whose contents must be erased by slave module. Memory comprises plurality of segments (S1, S2), broken down into a plurality of sectors and two segments comprise interleaved physical memory addresses, each erasing request sent by master module is sent indicating a range of virtual memory addresses corresponding only to a single segment of memory. Two consecutive erasing requests sent by master module respectively indicate ranges of virtual memory addresses corresponding to different segments of memory, said two consecutive erasing requests are aimed respectively at first segment (S1) and second segment (S2), corresponding erasing operations taking place in parallel.EFFECT: reduced risks of erroneous erasing of sectors containing interleaved physical memory addresses.4 cl, 6 dwg, 1 tbl

Architecture of optical memory expansion // 2603553
FIELD: computer engineering.SUBSTANCE: invention relates to computer engineering. Optical storage device expansion system contains the first electric logical circuit for transmitting data in accordance with the point-to-point interconnection protocol for data packet transmission in accordance with the full data transmission rate; the first intermediate circuit connected to receive data from the first electric circuit via the electric communication line, herewith the first intermediate circuit is made with the possibility of data conversion into the optical format intended for transmission at a rate of at least twice exceeding the full data transmission rate; the second intermediate circuit connected to receive data in the optical format from the first intermediate circuit via the optic communication line, herewith the second intermediate circuit is configured to convert data into the electric format corresponding to the point-to-point interconnection protocol for data packet transmission; and the second electric logical circuit connected to receive data from the first electric logical circuit, herewith the optic communication line is initialized in accordance with optical training states.EFFECT: technical result is the increase of the storage device bandwidth.36 cl, 24 dwg, 2 tbl

ethod of active layer producing for resistive memory // 2603160
FIELD: computer engineering.SUBSTANCE: invention can be used in making computer memory components, microprocessors, electronic passports and cards. Natural purified graphite is ground, in produced powder solvent is intercalated, not leading to graphite chemical oxidation, but promoting graphite stratification, for example, dimethyl formamide or N-methylpyrrolidone. For graphite particles stratification produced mixture is treated with ultrasound and obtaining suspension with graphene content of 50 %. For graphene fluoridation introducing from 3 to 10 % of hydrofluoric acid and from 40 to 47 % of water, including said intervals values. Smaller amount of hydrofluoric acid corresponds to larger amount of water and vice versa. Performing graphene fluoridation to 50-80 % for 20-60 days, including said values. Then, forming FG active layer for resistive memory element, for this purpose fluorinated suspension is dropwise applied on Si substrate or in combination using spin coulter, distributing it to required layer thickness, dried and washed in water. In another embodiment, fluorinated suspension, first washed, and then dropwise applied on Si substrate or in combination using spin coulter, distributing it to required layer thickness, and dried.EFFECT: invention enables maximum resistive effect stability.4 cl, 2 dwg, 5 ex

Restoring memory element // 2602765
FIELD: electronics.SUBSTANCE: invention relates to microelectronics. Restoring memory element has a substrate with a conducting electrode located on its working surface. Said conducting electrode has an active layer of dielectric. Second conducting electrode is located on the active layer. Conducting electrode located on the working surface and/or the second conducting electrode are made from metal. Dielectric layer is metal oxide from which conducting electrode located on the working surface and/or the second conducting electrode is made.EFFECT: technical result is lower voltage of reprogramming, as well as reduction of consumed power for reprogramming.14 cl, 1 dwg

Silicon multiplexer // 2602373
FIELD: electronics.SUBSTANCE: invention relates to optoelectronics and microelectronics and can be used to read electrical signals in photodetector sub-modules, for mosaic photodetectors, in particular in photodetectors on microbolometers. Silicon multiplexer consists of vertical and horizontal shift registers, line addressing system on n-MOS transistors, output unit, output amplifier and array of reading cells, also, device includes additional vertical register, additional horizontal register, switch for transmitting control signals from vertical register to additional vertical register and from horizontal register to additional horizontal register, RAM, comparators, counters and additional links.EFFECT: technical result is enabling reading not only within a full frame, but in fragments of full array of reading cells with user-specified coordinates and dimensions; minimising area of IC chip for reading photoelectric signal occupied by addressing unit, as well enabling reading of photoelectric signals of a fragment of a full image frame with given coordinates and dimensions.1 cl, 2 dwg

Programmable logic device // 2601145
FIELD: computer engineering.SUBSTANCE: invention relates to automation and computer systems and can be used for calculation of logic functions in self-synchronizing programmable logic integrated circuits. Device comprises a unit for calculating a logic function, a unit for calculating a dual logic function, a NOT-OR element, 2n inputs of inverse adjustment, n inputs of variables inversions, an inverse data output, a display output, herewith the units for calculating a logic function and a dual logic function include a group of 2n transistors of inverse conductivity, an additional inverter, the “Zero Volt” bus connection input.EFFECT: technical result is providing the possibility of initiation of a transient process completion for the device use in self-synchronizing circuits with paraphrase variables and a zero spacer.1 cl, 2 dwg, 2 tbl

ethod of controlling service life of non-volatile memory // 2600525
FIELD: computer engineering.SUBSTANCE: invention relates to computer engineering. Method of controlling service life of a data storage system, comprising dividing data storage system into multiple working sectors and multiple backup sectors, capable of forming backup of service life, wherein certain working sectors are subject to replacement with backup sectors in case of wear of said sectors after a certain number of programming and/or deletion cycles; setting a zone for controlling backup sectors for determining location of backup sectors assigned for replacement of worn-out working sectors; determining, sector by sector, whether current working sector is physically worn and replacing said working sector with backup sector, only if current working sector is deemed physically worn-out; wherein wear of a sector is evaluated by automatically reading quality deleting memory points of said sector and comparing with a boundary readability criterion (Margin Vref), which is harder than normal readability criterion (Normal Vref).EFFECT: technical result is longer operating life of memory.8 cl, 7 dwg

agnetic random access memory cell with improved dispersion of switching field // 2599956
FIELD: computer engineering.SUBSTANCE: invention relates to computer engineering. Magnetic random access memory (MRAM) cell comprises a tunnel magnetic junction having the first ferromagnetic layer, the second ferromagnetic layer with the second magnetization, which can be oriented relative to the axis of anisotropy of the second ferromagnetic layer at a predetermined high-temperature threshold, and a tunnel barrier between the first and the second ferromagnetic layers; the first current transmission line extending along the first direction and being in communication with the tunnel magnetic junction; herewith the first current transmission line is configured able to provide the magnetic field to orient the second magnetization while transferring the field current; wherein the MRAM cell is configured relative to the first current transmission line in such a way, that while providing the magnetic field at least one magnetic field component is perpendicular to the said axis of anisotropy; the second ferromagnetic layer is of asymmetric shape along at least one of its dimensions, so that the second magnetization contains the pattern of C-shape condition.EFFECT: technical result is the reduction of power consumption and improved dispersion of the switching field.12 cl, 6 dwg

Self-referenced magnetic random access memory element comprising synthetic storage layer // 2599948
FIELD: computer engineering.SUBSTANCE: element of random-access memory (MRAM) comprises a magnetic tunnel junction having: memory layer; reading layer; and a tunnel barrier layer enclosed between storage layer and reading layer; memory layer contains a first magnetic layer having a first storage magnetisation; second magnetic layer having a second storage magnetisation; and a non-magnetic binding layer separating first and second magnetic layers so that first storage magnetisation is substantially antiparallel to second storage magnetisation; wherein first and second magnetic layers are configured so that at reading temperature first storage magnetisation is substantially equal to second storage magnetisation; and at write temperature, which is higher than read temperature, second storage magnetisation is greater than first storage magnetisation.EFFECT: providing low power consumption and increased rate of recording and reading of memory cell.11 cl, 10 dwg

ram cell and method for writing to mram cell using thermally assisted write operation with reduced field current // 2599941
FIELD: computer engineering.SUBSTANCE: method for writing to a magnetic random-access memory (MRAM) cell using a thermally assisted write operation, comprising a magnetic tunnel junction, formed from a memory layer having magnetisation memory; reference layer having reference magnetisation, and a tunnel barrier layer, located between read and memory layers; and a current line which is electrically connected with said magnetic tunnel junction; wherein method includes passing heating current via magnetic tunnel junction for heating magnetic tunnel junction; passing field current for switching storage magnetisation in written direction according to polarity of field current, wherein value of heating current is such that it acts as a spin polarised current and causes adjustment of spin transfer on storage magnetisation; and heating current polarity is such that it causes adjustment of spin transfer on storage magnetisation in said written direction.EFFECT: low field current.6 cl, 4 dwg

Cell of magnetic random access memory (mram) with self reference inlcudning ferrimagnetic intrinsic layers // 2599939
FIELD: computer engineering.SUBSTANCE: invention relates to computer engineering. Cell of magnetic random access memory (MRAM) comprises a magnetic tunnel junction including a storage layer having a net magnetization for writing data, which is controlled from the first direction to the second direction when the magnetic tunnel junction is heated to high temperature threshold, and which is fixed at low-temperature threshold; reading layer having a net magnetization for reading, which is reversible; and a tunnel barrier layer separating the reading layer from the storage layer; besides, at least one of the memory layer and reading layer contains material of ferrimagnetic 3d-4f amorphous alloy containing subarray of atoms of transition 3d-metals providing the first magnetisation, and subarray of atoms of rare-earth 4f-elements, providing a second magnetisation, so that at compensation temperature of said at least one of the memory layer and reading layer the first magnetisation is equal to the second.EFFECT: technical result ensured MRAM cell recording and reading with a weak recording/reading field.9 cl, 3 dwg

emory controller and method of operating such memory controller // 2597520
FIELD: computer engineering.SUBSTANCE: memory controller for controlling access to a memory device of the type having a non-uniform access timing characteristic has an interface for receiving transactions issued from at least one transaction source; a buffer used to temporarily store as pending transactions those transactions that have not yet been issued to the memory device, wherein the buffer maintains a plurality of ordered lists for the stored pending transactions, including at least one priority based list, and at least one access timing list, wherein each priority based ordered list has a number of entries, each entry is associated with one of the pending transactions and ordered within its priority based ordered list based on the priority indication of the associated pending transaction; arbitration circuitry that performs an arbitration operation during which the plurality of ordered lists are referenced so as to select from the pending transactions a winning transaction to be issued to the memory device.EFFECT: to achieve a balance between reordering of transactions to improve memory access times.28 cl, 21 dwg

Recording device for recording information onto multilayer recording medium // 2596070
FIELD: information technology.SUBSTANCE: device for recording information onto multilayer recording medium contains an initialization means, which sets the block size to enclose a predetermined volume of information, and a recording means for further recording information on at least two information layers, so that the information is recorded alternately in at least two information layers. Recording means is designed for recording information in a block to enclose a predetermined volume of information onto the first layer of at least two above mentioned information layers, until the block is filled, and further recording of information in the next block to enclose a predetermined volume of information onto the second layer of at least two above mentioned information layers, differing from the first layer, until the next block is filled. Initiation means is designed for flexible setting a variable size of the block to enclose a predetermined volume of information, which is set depending upon the method used to transfer the information to be stored to the device, or upon the type of application transmitting the said information.EFFECT: technical result is faster recording.1 cl, 13 dwg

agnetic recording element // 2595588
FIELD: computer engineering.SUBSTANCE: magnetic recording element comprises a set of layers, which is a magnetic recording layer, wherein set includes central layer, at least of magnetised magnetic material, magnetisation direction parallel to plane of central layer, which is located between first and second outer layers of non-magnetic material; and device for recording current passing through second external layer and a central layer in direction of current, parallel to plane of central layer and making angle α in 90°±60° with said direction of magnetisation for driving in central layer effective magnetic field, wherein said current passes either in first direction, or in second direction opposite first magnetisation direction, for orientation of magnetisation direction in first magnetisation direction or in second direction of magnetisation opposite first magnetisation direction, direction of magnetisation is oriented in response to spin-orbital field, which is generated by recording current.EFFECT: providing recording operations without application of external magnetic field.33 cl, 12 dwg

Electronic device // 2593683
FIELD: information technology. SUBSTANCE: invention relates to field of playing back data recorded on optical disc, or to execute program stored on optical disc. Proposed electronic device using optical disc, comprises top surface, curved from its front edge to its rear edge so that central part of upper surface in forward-backward direction is located above front and rear edges, moving cover forming part upper surface and curved in accordance with shape of upper surface so that central part of cover in forward-backward direction is located above front and rear edges of cover. At that, movable cover has possibility of movement by sliding between open and closed positions, compartment to accommodate disc, closed by moving cover in closed position and made so that disc is located inside said separation, drive rotating element arranged in compartment to accommodate disc and inserted into central hole of optical disc for purpose of its rotation, front panel forming front part of upper surface of electronic device and rear panel that makes rear part of upper surface of electronic device, wherein movable cover has possibility of movement by sliding in direction to left and right between front panel and rear panel. EFFECT: increased height of driving device, as result it provides possibility of performing directly by user of optical disc insertion, id est simplified installation of optical disc in device. 9 cl, 9 dwg

ethod of processing, storage and transmission of telecode control commands // 2592456
FIELD: communication. SUBSTANCE: invention relates to processing, storage and transmission of telecode control commands in communication terminal systems. Method includes following: at transmitting side constant and variable parts of telecode control command are selected, in array of compressed information constant part of index telecode control command code in database telecode control command is placed, variable part of telecode control command normalized and is placed into array of compressed data, entropy coding of compressed information array is performed. At recovery of initial data on receiving side, after statistical decoding received information by code index constant part telecode control command in database of telecode control commands constant part of telecode command control is found and written into array of restored data, then for variable parts of telecode control command operation is executed, reverse to its normalisation, checking allowable range of values of telecode control command variable part and when performing this check variable part of command is placed into array of restored information. In absence of constant index code part of telecode control command in database of telecode control commands or failing to check permissible range of values of telecode control commands variable part in array of recovered information recording feature of telecode control command deleting. EFFECT: technical result is increase of reliability, accuracy and information security of telecode control commands. 6 cl

Determination of representative images for video // 2591656
FIELD: information technology.SUBSTANCE: group of inventions relates to determining representative image of at least one fragment of video filming. Video information comprises at least one fragment survey (SH), which is continuous sequence of images displaying scene on view from specific location. From filming fragment (SH) pictures are taken for producing continuous sequence of selected images (SI), uniformly distributed along whole filming fragment. Identifying at least one continuous sub-sequence (SB1, SB2, SB3) selected from images, which satisfy preset criterion of similarity. Image is selected from continuous part (SP) of filming fragment, which coincides with longest continuous sub-sequence (SB2) of selected images, which satisfy preset criterion of similarity. Selected image is representative image (RI) for filming fragment.EFFECT: technical result is high speed of representative image determining.14 cl, 8 dwg

Self-referential mram cell with optimised reliability // 2591643
FIELD: computer engineering.SUBSTANCE: invention relates to computer engineering. Element of magnetoresistive random access memory (MRAM), suitable for thermal recording and self-referential reading operation, has magnetic tunnel junction having first and second parts, each part has layer for storing, reading layer and tunnel barrier layer; wherein magnetic tunnel junction further comprises antiferromagnetic layer between two layers of memorising, fixing storage magnetisation of every layer storage at low temperature threshold and releasing at high temperature threshold, so that during recording operation free magnetisation of each layer is capable of reading on magnetic saturation in accordance with direction of magnetic field recording at application of this field and storage magnetisation are capable for switching in the direction, in fact, parallel and corresponding to direction of saturated free magnetisations.EFFECT: technical result consists in improvement of efficiency of heating the magnetic tunnel junction at minimisation of risks of breakdown and ageing tunnel barrier layers.9 cl, 1 dwg

ethod of recording data on optical recording medium and apparatus for reproducing data from optical data medium // 2586820
FIELD: instrument making.SUBSTANCE: invention relates to defect management on disks. Device for reproducing data from optical recording medium containing initial area, data and destination area, comprises head and controller. Recording medium has predetermined area for storage of substitution unit for replacing faulty unit, having defect in user data area, and list of defects. Controller controls head for reading list of defects of predefined area in optical recording medium and for reading of disc definition structure. A record of a list of defects has the first indicator, specifying a physical location of a defect unit, the second indicator, specifying a physical location of a substitution unit corresponding to a defect unit, and information on status of a defect unit and a substitution unit. Information on status comprises first information indicating whether faulty unit is single or serial, and if faulty unit is serial, second information indicating whether faulty unit is initial unit or final unit among serial defect units.EFFECT: technical result is increased efficiency of disk space controlling.1 cl, 15 dwg

agnetic memory element // 2585578
FIELD: physics.SUBSTANCE: group of inventions relates to a writeable magnetic element and writable magnetic device. Writable magnetic element comprises a stack of layers. Magnetic writing layer is made of at least one magnetic material having a direction of magnetisation that is parallel or perpendicular to central layer plane. Said writing layer is located between first and second outer layers made of different first and second non-magnetic materials, where second non-magnetic material is electrically conductive. Writable magnetic element also comprises a device for passing a write current only through second outer layer and magnetic writing layer, where write current flows in current direction parallel to magnetic writing layer plane and does not pass through stack of layers in a direction perpendicular to plane of layers, and a device for applying magnetic field with magnetisation direction and magnetic field perpendicular to each other.EFFECT: inversion of magnetisation is ensured due to magnetic layer which functions without passing current perpendicularly to plane of layers.24 cl, 25 dwg

Ternary reversible shift register // 2585263
FIELD: computer engineering.SUBSTANCE: invention relates to nonbinary circuitry. Technical result is achieved by including of shift into ternary reversible register, which contains ternary decoder 1×3, ternary multiplexers, ternary D triggers and two threshold elements of ternary logic.EFFECT: provision of devices on the basis symmetric ternary number system +1, 0 and -1 in environment of integrated semiconductor electronics.1 cl, 2 dwg, 3 tbl
 
2550882.
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